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Numero di documenti: 131.

Le Gallou, N. ; Villemazet, J.F. ; Cogo, B. ; Cazaux, Jean-Louis ; Mallet, A. ; Lapierre, L. (2003) 10 W High Efficiency 14V HBT Power Amplifier for Space Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gu, Zheng ; Thiede, Andreas ; Möller, Lothar (2003) 20 Gbit/s Decision Feedback Loop for Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lefebvre, B. ; Bessemoulin, A. (2003) 35-45 GHz Image Rejection Star Mixer for Up-and Down Conversion. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Werthof, Andreas (2003) 36-44 GHz HPAfor High Linearity Radio Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Centurelli, F. ; Golfarelli, Alessandro ; Guinea, Jesus ; Masini, Leonardo ; Morigi, Damiana ; Pozzoni, Massimo ; Scotti, Giuseppe ; Trifiletti, Alessandro (2003) A 10 Gb/s CMU in SiGe BiCMOS commercial technology with multistandard capability. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bao, Mingquan ; Li, Yinggang ; Cathelin, Andreia (2003) A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tsenes, Petros ; Uzunoglu, Nikolaos (2003) A 4-bit 7.5 GHz A/D Converter. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lee, Sang-Heung ; Lee, Ja-Yol ; Lee, Seung-Yun ; Park, Chan Woo ; Kim, Sang Hoon ; Bae, Hyun-Chul ; Kang, Jin-Yeong ; Cho, Kyoung Ik (2003) A 5.8 GHz Mixer using SiGe HBT Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ueda, Hiro-omi ; Shinjo, Shintaro ; Nabeno, Yasuhiro ; Ono, Masayoshi ; Ohnakado, Takahiro ; Murakami, Takaaki ; Furukawa, Akihiko ; Hashizume, Yasushi ; Nishikawa, Kazuyasu ; Mori, Takeshi ; Yamakawa, Satoshi ; Oomori, Tatsuo ; Suematsu, Noriharu (2003) A 5GHz-Band On-Chip Matching CMOS MMIC Front-End. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Collins, Thomas E. ; Betti-Berutto, A. ; Long, Stephen I. (2003) A 75 GHz Current Mode Logic Static Frequency Divider Realized in a Commercially Available InP Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Butterworth, Peter ; Charbonniaud, C. ; Campovecchio, M. ; Nallatamby, Jean-Christophe ; Monnier, Marc ; Lajugie, Monique (2003) A Balanced Sub-Harmonic Cold FET Mixer for 40GHz Communication Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bessemoulin, A. ; Gaessler, C. ; Marschall, P. ; Quentin, P. (2003) A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

De Dominicis, M. ; Giannini, F. ; Scucchia, L. (2003) A Dual-Band MMIC Low frequency 180 ° Hybrid. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Acciari, G. ; Colantonio, P. ; De Dominicis, M. ; Rossi, M. (2003) A Fast AM/AM and AM/PM Characterization Technique. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ó hAnnaidh, Breandán ; Brazil, Thomas J. (2003) A Globally-Continuous, Charge-Conservative, Non-linear Equivalent Circuit Model For RF MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Camprini, M. ; Magrini, Iacopo ; Collodi, G. ; Cidronali, A. ; Nair, Vijay ; Manes, Gianfranco (2003) A Hybrid Self-Oscillating Mixer Based on InP Heterojunction Interband Tunnel HEMT for Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tsai, Ming-Da ; Liu, Ren-Chieh ; Lin, Chin-Shen ; Wang, Huei (2003) A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier InGaP. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kim, Moonjung ; Cha, Jung-Ho ; Shin, Seong-Ho ; Jeon, Soo-Kun ; Kim, Jaeho ; Kwon, Young-Se (2003) A Monolithically Integrated InP-Based HBT and p-i-n Photodiode Using New Stack-Shared Layer Scheme. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Iommi, Roberto ; Macchiarella, Giuseppe ; Meazza, Andrea ; Pagani, Maurizio (2003) A New Active Predistortion Linearizer Suitable for MMIC Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Fujimoto, Shinichi ; Shuto, Hiroaki ; Matsuura, Mitsuhiro ; Yamamoto, Kazuya ; Ishikawa, Takahide ; Komaru, Makio ; Matsuda, Yoshio (2003) A New Methodology to Enable Parameterized Cell Transfer between Microwave CADs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Hamed, Karim W. ; Freundorfer, Alois P. ; Antar, Yahia M.M. (2003) A Novel 20 to 40 GHz Monolithic InGaP/GaAs HBT Double Balanced Mixer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cidronali, A. ; Collodi, G. ; Accillaro, C. ; Toccafondi, C. ; Vannini, G. ; Santarelli, A. ; Manes, G. (2003) A Scalable PHEMT Model Taking Into Account Electromagnetic and Electro-Thermal Effects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kallfass, I. ; Gruson, F. ; Abele, P. ; Michelakis, K. ; Hackbarth, T. ; Hieber, K.-H. ; Müller, J. ; Schumacher, H. (2003) A SiGe HEMT Mixer IC with Low Conversion Loss. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Wong, J. N. H. ; Aitchison, C. S. (2003) A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Santarelli, Alberto ; Paganelli, Rudi Paolo ; Costantini, A. ; Vannini, Giorgio ; Filicori, Fabio (2003) A Simplified Approach for Quasi-linear Power Amplifier Distortion Evaluation. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Masud, Anowar ; Ferndahl, M. ; Zirath, Herbert (2003) A Variable gain MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Morigi, Damiana ; Masini, Leonardo ; Pozzoni, Massimo (2003) A Wideband Low Voltage Low Phase Noise 10-GHz SiGe Switchable VCO. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bertazzi, F. ; Cappelluti, F. ; Bonani, F. ; Goano, M. ; Ghione, G. (2003) A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

De Dominicis, M. ; Giannini, F. ; Limiti, E. ; Serino, E. (2003) A novel noise model extraction technique for microwave and millimeter wave HEMT. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Massaro, A. ; Mancini, V. ; Di Donato, A. ; Rozzi, T. (2003) Accurate Analysis of Polarization Coupling in Laminated Multilayered Thin Film Optical 3-D Waveguides. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Thayne, Iain ; Boyd, E. ; Cao, Xin ; Elgaid, K. ; Holland, Martin ; McLelland, Helen ; McEwan, Fiona ; Macintyre, Douglas ; Moran, David ; Stanley, Colin ; Thoms, Stephen (2003) Advanced III-V HEMT MMIC Technologies for Millimetre-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Piloto, Andrew J. ; Yamada, Reiichi ; Burgess, Jerry ; Hall, Rick (2003) Advancement in T/R Module Interconnects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mokerov, V.G. ; Velikovskii, L.E. ; Kanametova, Z.T. ; Kaminskii, V.E. ; Sazonov, P.V. ; Graul, J. ; Semchinova, O. (2003) AlGaN/GaN-heterojunction FET with inverted 2DEG Channel. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Adahl, Andreas ; Zirath, Herbert (2003) An 1 GHz Class E LDMOS Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gao, Jianjun ; Li, Xiuping ; Yang, Hong ; Boeck, Georg (2003) An Approach to Determine and for InP HBT Using Cutoff Mode Measurement. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Loo-Yau, J.R. ; Zúñiga-Juárez, J.E. ; Hirata-Flores, F.I. ; Reynoso-Hernández, J.A. (2003) An Improved GaAs FET Nonlinear Model Suitable for Intermodulation Analysis of Amplifiers,Switches and Resistive Mixers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Shouxian, Mou ; Jianguo, Ma ; Seng, Yeo Kiat ; Anh, Do Manh (2003) An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cabral, Pedro Miguel ; Borges Carvalho, Nuno ; Pedro, José Carlos (2003) An Integrated View of Nonlinear Distortion Phenomena in Various Power Amplifier Technologies. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Viallon, Christophe ; Tournier, Eric ; Graffeuil, Jacques ; Parra, Thierry (2003) An Original SiGe Active Differential Output Power Splitter for Millimetre-wave Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Polleux, J.L. ; Moutier, F. ; Billabert, A.L. ; Rumelhard, C. ; Sönmez, E. ; Schumacher, H. (2003) An SiGe/Si Heterojunction Phototransistor for Opto-Microwave Applications:Modeling and first Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Dambrine, G. ; Parenty, Thierry ; Bollaert, S. ; Happy, Henri ; Cappy, A. ; Mateos, Javier ; Nahri, Tapani ; Orlhac, Jean Claude ; Trier, Marc ; Baudet, Pierre ; Landry, Patrice (2003) An overview of low noise devices and associated circuits for 100-200 GHz space applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Anakabe, A. ; Collantes, J.M. ; Portilla, J. ; Jugo, J. ; Mons, S. ; Mallet, A. ; Lapierre, L. (2003) Analysis of Odd-Mode Parametric Oscillations in HBT Multi-Stage Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van Bezooijen, André ; Prikhodko, Dima ; van Roermund, A.H.M. (2003) Biasing Circuits for Voltage Controlled GSM Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Leuzzi, Giorgio ; Di Paolo, F. (2003) Bifurcation Synthesis by means of Harmonic Balance and Conversion Matrix. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Simburger, Werner ; Kehrer, Daniel ; Tiebout, Marc ; Wohlmuth, Hans-Dieter ; Knapp, Herbert ; Wurzer, Martin ; Perndl, Werner ; Rest, Mirjana ; Kienmayer, Christoph ; Thuringer, Ronald ; Bakalski, W. ; Scholtz, Arpad L. (2003) CMOS and SiGe Bipolar Circuits for High-Speed Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Chandrasekhar, Arun ; Stoukatch, Serguei ; Brebels, S. ; Balachandran, Jayaprakash ; Beyne, Eric ; De Raedt, W. ; Nauwelaers, Bart ; Poddar, Anindya (2003) Characterisation, Modelling and Design of Bond-Wire Interconnects for Chip-Package Co-Design Insertion Loss (dB). In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Malaver, Emigdio ; Garcıa, Jose Angel ; Tazon, Antonio ; Mediavilla, Angel (2003) Characterizing the Linearity Sweet-Spot Evolution in FET Devices. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Issaoun, I. ; Dousset, D. ; Kouki, A.B. ; Ghannouchi, F.M. (2003) Comparison of a New Modified Gummel-Poon Model and VBIC for AlGaAs/GaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Nuttinck, S. ; Pinel, S. ; Gebara, E. ; Laskar, J. ; Harris, M. (2003) Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Giorgio, Agostino ; Perri, Anna Gina (2003) Design of Photonic Crystals Devices with Defects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

García, J.A. ; Malaver, E. ; Cabria, L. ; Gómez, C. ; Mediavilla, A. ; Tazón, A. (2003) Device-level Intermodulation Distortion Control on III-V FET ’s Abstract. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cibiel, G. ; Llopis, O. ; Escotte, L. ; Haquet, G. (2003) Devices selection for S to X bands low phase noise oscillator design. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sotero, Sonia ; Herrera, Amparo ; Cabo, Javier (2003) Dual Band Monolithic AGC Amplifier for Space Applications based on a commercial 0.2 µm PHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Detratti, Marco ; Chuan, Jeffrey ; Pascual, Juan Pablo ; García, José Luis ; Cabo, Javier (2003) E/D pHEMT Multi Frequency Generator GaAs MMIC for Aerospace Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tassetti, Charles-Marie ; Lissorgues, Gaëlle ; Gilles, Jean-Paul (2003) Effects of a loop array layer on a micro-inductor for future RF MEMS Components. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Charbonniaud, C. ; De Meyer, S. ; Quéré, R. ; Teyssier, JP. (2003) Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Vandersmissen, Raf ; Schreurs, Dominique ; Carchon, G. ; Borghs, G. (2003) Feedback Amplifier based on an Embedded HEMT in Thin-film Multilayer MCM-D Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Wang, Guoan ; Bacon, Andrew ; Abdolvand, Reza ; Ayazi, Farrokh ; Papapolymerou, John ; Tentzeris, Emmanouil M. (2003) Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Seemann, Kay ; Ramberger, Suitbert ; Tessmann, Axel ; Quay, Rudiger ; Schneider, Joachim ; Rießle, Markus ; Walcher, Herbert ; Kuri, Michael ; Kiefer, Rudolf ; Schlechtweg, Michael (2003) Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Coustou, A. ; Sie, M. ; Dubuc, D. ; Graffeuil, J. ; Tournier, E. ; Llopis, O. ; Plana, R. (2003) Frequency synthesis from 2 to 30 GHz using a 0.35 µm BiCMOS SiGe technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van Vliet, F.E. ; van Wanum, M. ; Roodnat, A.W. ; Alfredson, M. (2003) Fully-integrated wideband TTD core chip with serial control. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Paparo, Mario ; Erratico, Pietro ; Murari, Bruno (2003) Future Trends in Si Technology/ICs for RF Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Muller, Alexandru ; Konstantinidis, George ; Neculoiu, Dan ; Plana, Robert (2003) GaAs MEMS for Millimeter Wave Communications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Arena, M. ; Belperio, F. ; Calderone, L. ; Comparini, M.C. ; Leone, C. ; Simone, L. (2003) GaAs, Advanced RF CMOS and Silicon Components for Miniaturised Space Digital Receiver. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Collodi, G. ; Cidronali, A. ; Toccafondi, C. ; Santarelli, A. ; Vannini, G. (2003) Global modeling approach to the design of an MMIC amplifier using Ohmic Electrode-Sharing Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Parvais, B. ; Cerderia, A. ; Schreurs, D. ; Raskin, J.-P. (2003) Harmonic Distortion Characterization of SOI MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Subramaniam, Suba C. ; Rezazadeh, Ali A. (2003) He + -and Fe+ -ion bombardments in the electrical isolation of InP/InGaAs HBT Structures. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cao, Xin ; Thayne, Iain ; Thoms, Stephen ; Holland, Martin ; Stanley, Colin (2003) High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Morris, Arthur S. ; Cunningham, Shawn ; Dereus, Dana ; Schröpfer, Gerold (2003) High-Performance Integrated RF-MEMS: Part 1-The Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Murata, Koichi ; Enoki, Takatomo ; Sugahara, Hirohiko ; Tokumitsu, Masami (2003) ICs for 100 Gbit/s Data Transmission. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Rodwell, M. ; Scott, D. ; Urteaga, M. ; Dahlström, M. ; Griffith, Z. ; Wei, Y. ; Parthasarathy, N. ; Kim, YM ; Pierson, R. ; Rowell, P. ; Brar, B. (2003) InP Bipolar Transistors:High Speed Circuits and Manufacturable Submicron Fabrication Processes. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zirath, Herbert ; Grahn, Jan ; Rorsman, Niklas ; Mellberg, Anders ; Stake, Jan ; Angelov, I. ; Starski, Piotr (2003) InP HEMTs and HBVs for Low Noise and Ultra-High Speed:Device and Circuit Research at Chalmers University of Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Neumann, S. ; Prost, W. ; Tegude, F.-J. (2003) InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Watanabe, Noriyuki ; Uchida, Masahiro ; Yokohama, Hideo ; Araki, Gako (2003) Influence of carbon sources on thermal stability of C-doped base InP/InGaAs heterojunction bipolar transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zucchelli, G. ; Santarelli, A. ; Raffo, A. ; Vannini, G. ; Filicori, F. (2003) Influence of dispersive effects on large-signal models based on differential parameter integration. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Schlechtweg, Michael ; Tessmann, Axel ; Leuther, Arnulf ; Schwörer, Christoph ; Lang, Manfred ; Nowotny, Ulrich ; Kappeler, Otmar (2003) Integrated Circuits Based on 300 GHz fT Metamorphic HEMT Technology for Millimeter-Wave and Mixed-Signal Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Di Marcantonio, U. ; Di Nardo, I. ; Tursini, M. ; Comparini, M.C. ; Novello, R. ; Leone, C. (2003) Integrated Substrate Packaging Based on LTCC and HTCC Technologies for Highly Integrated Space Equipment. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sonmez, E. ; Trasser, A. ; Abele, P. ; Schad, B. ; Schumacher, H. (2003) Integrated receiver components for low-cost 26 GHz LMDS applications using an 0.8 um Sige HBT technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Long, Sabine ; Escotte, L. ; Graffeuil, Jacques ; Fellon, P. ; Roques, Daniel (2003) Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van der Graaf, M.W. ; van Wanum, M. ; Maas, A.P.M. ; Suijker, E.M. ; Knight, A. ; Ludwig, M. (2003) L-Band MMICs for Space-based SAR system. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sutton, William E. ; Pavlidis, Dimitris ; Lahrèche, Hacène ; Damilano, Benjamin ; Langer, Robert (2003) Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Basaran, U. ; Berroth, M. (2003) Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method W. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bonani, F. ; Donati Guerrieri, S. ; Ghione, G. (2003) Large-signal compact diode noise modelling strategies for non-autonomous RF nonlinear applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lien, Y. C. ; Chang, E. Y. ; Chang, H. C. ; Chu, L. H. ; Huang, K. W. ; Lee, H. M. ; Lee, C. S. ; Chen, S. H. ; Shen, P. T. (2003) Low Noise Metamorphic HEMTs with Reflowed Submicron T-Gate. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mheen, Bongki ; Park, Chan Woo ; Kim, Sang Hoon ; Kang, Jin-Yeong ; Hong, Songcheol (2003) Low noise amplifiers in SiGe hetero-junction bipolar process using reduced pressure chemical vapor deposition. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bielecki, Z. ; Kolosowski, W. ; Dufrene, R. ; Borejko, M. (2003) Low noise optical receivers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Schwörer, C. ; Tessmann, A. ; Leuther, A. ; Massler, H. ; Reinert, W. ; Schlechtweg, M. (2003) Low-Noise W-Band Amplifiers for Radiometer Applications Using a 70 nm Metamorphic HEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Comparini, M.C. ; Linkowski, J. R. ; Montanucci, P. ; Pizzuti, E. ; Suriani, A. ; Vasarelli, F. (2003) Low-cost, low-mass ltcc down converter for communication satellite payloads. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gomez–Garcıa, Roberto ; Briso–Rodrıguez, Cesar ; Mahfoudi, Mustapha ; Alonso, Jose I. (2003) MMIC Tunable Transversal Bandpass Active Filter at 9–12 GHz. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Brown, April S. ; Jokerst, Nan Marie ; Brooke, Martin A. ; Kuech, Thomas ; Kuan, T.S. (2003) Materials to Microsystems:Heterogeneous Integration Technologies. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Hoffmann, Sebastian ; Thiede, Andreas ; Tommasino, Pasquale ; Trifiletti, Alessandro ; Vannucci, Antonello (2003) Measurement-based models of a 40 Gb/s modulator and its electrical driver for joint transmitter design. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Jin, Z. ; Neumann, S. ; Prost, W. ; Tegude, F.-J. (2003) Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNx. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Osorio, Ricardo ; Klein, Mona ; Massler, H. ; Korvink, Jan G. (2003) Micromachined Strip Line with SU-8 as the Dielectric. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Caloz, Christophe ; Sanada, Atsushi ; Itoh, Tatsuo (2003) Microwave Circuits Based on Negative Refractive Index Material Structures. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Deborgies, F. (2003) Microwave Technologies for Satellite Systems:an ESA Perspective. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ceylan, N. ; Mueller, J.E. ; Pittorino, T. ; Weigel, R. (2003) Mobile Phone Power Amplifier Linearity and Efficiency Enhancement Using Digital Predistortion. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cavanna, T. ; Feudale, M. ; Ranieri, P. ; Suriani, A. (2003) Multifunction MMIC For Miniaturized Solid State Switch Matrix. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Giannini, F. ; Colantonio, P. ; Leuzzi, G. ; Orengo, G. ; Serino, A. (2003) Neural-Based Nonlinear Device Models for Intermodulation Analysis. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Shur, Michael S. ; Ryzhii, Victor (2003) New Concepts for Submillimeter-Wave Detection and Generation. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Balsi, Marco ; Centurelli, F. ; Forte, Alessandra ; Scotti, Giuseppe ; Tommasino, Pasquale ; Trifiletti, Alessandro (2003) Non-Linear Statistical Modelling of GaAs FET Integrated Circuits Using Principal Component Analysis Abstract. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zamanillo, J.M. ; Portilla, J. ; Navarro, C. ; Pérez-Vega, C. ; Mediavilla, A. (2003) Optical Control of a GaAs Chip MMIC Amplifier at S Band. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

SuH, Youngsuk ; Kim, I.S. ; Song, J.S. (2003) Optimal Parameter Extraction Scheme of Current Sources and Bias Dependent Elements for HBT by searching the whole unknown Parameter Space. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zlámal, Jan ; Myslík, Vladimír ; Machác, Petr (2003) Pd/In-based Ohmic Contacts to n-GaAs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Reedy, Ronald E. (2003) Perspective of RF CMOS/Mixed Signal Integration in Next Generation Satellite Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kasai, D. ; Kazami, Y. ; Mitani, Y. ; Horio, K. (2003) Physics-Based Device Simulation of Lag and Power Compression in GaAs FETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Auxemery, Ph. ; Pataut, G. ; Blanck, H. ; Doser, W. (2003) Power HBT reliability for space applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Palomba, Francesco ; Pagani, Maurizio ; De Francesco, I. ; Meazza, Andrea ; Mornata, Alessandro ; Procopio, Gregorio ; Sivverini, Giuseppe (2003) Process-Tolerant High Linearity MMIC Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Machác, Petr ; Žilka, Martin ; Výborný, ZdeneČk (2003) Pt/GaAs side wall Schottky diode. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cidronali, A. ; Loglio, G. ; Jargon, J. ; Remley, K.A. ; Magrini, I. ; DeGroot, D. ; Schreurs, D. ; Gupta, K.C. ; Manes, G. (2003) RF and IF mixer optimum matching impedances extracted by large-signal vectorial measurements. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Melle, S. ; Flourens, F. ; Dubuc, D. ; Grenier, K. ; Pons, P. ; Pressecq, F. ; Kuchenbecker, J. ; Muraro, J.L. ; Bary, L. ; Plana, R. (2003) Reliability Overview of RF MEMS Devices and Circuits. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Park, Min ; Ahn, Hokyun ; Kang, Dong Min ; Ji, Honggu ; Mun, Jaekyoung ; Kim, Haecheon ; Cho, Kyoung Ik (2003) Single Supply,High Linearity,High Efficient PHEMT Power Devices and Amplifier for 2 GHz &5 GHz WLAN Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Brabetz, T. ; Fusco, Vincent F. (2003) Six-Port Receiver Front-End MMIC for V-Band MBS Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Moreira, Alberto ; Krieger, Gerhard (2003) Spaceborne Synthetic Aperture Radar (SAR)Systems: State of the Art and Future Developments. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Melczarsky, I. ; Costantini, A. ; Zucchelli, G. ; Paganelli, R.P. ; Santarelli, A. ; Vannini, G. ; Filicori, F. (2003) Statistical modelling of electron devices based on an equivalent-voltage approach. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sheng, H. ; Rezazadeh, A.A (2003) Study of temperature dependence of turn-on voltages IN III-V HBTS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Johansen, Tom K. ; Vidkjaer, Jens ; Krozer, Viktor (2003) Substrate Effects in SiGe HBT Modeling. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Pinel, S. ; Lim, K. ; DeJean, R.G. ; Li, L. ; Lee, C-H. ; Maeng, M. ; Davis, M.F. ; Tentzeris, M. ; Laskar, J. (2003) System-on-Package (SOP) Architectures for compact and low cost RF Front-end modules. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Joe, Jin Hyoun ; Missous, Mohamed (2003) The Effects of Compositionally Graded Bases and Annealing on InGaP-GaAs HBTs Grown by MBE using a GaP Decomposition Source. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mishra, Meena ; Muralidharan, R. ; Harsh, * ; Islam, S.S. ; Das, Mukunda B. (2003) The Effects of Extended Depletion Region on Noise Modeling of HEMT ’s. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Chertouk, M. ; Chang, W.D. ; Yuan, C.G. ; Chen, C.H. ; Tu, D.W. (2003) The First 0.15um MHEMT 6 ”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Forestier, S. ; Gasseling, T. ; Bouysse, P. ; Barataud, D. ; Quere, R. ; Nebus, J.M. (2003) Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sexton, James ; Missous, Mohammed (2003) Thermal Stability of Beryllium Doped InP/InGaAs Single and Double HBTs Grown by Solid Source Molecular Beam Epitaxy. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Farina, M. ; Rozzi, Tullio (2003) Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Issaoun, A. ; Dousset, D. ; Kouki, A.B. ; Ghannouchi, F.M. (2003) Transcapacitances and Bias Dependent Time Delay and Base Resistance Expressions for Accurate Large Signal Modeling of HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cignani, R. ; Costantini, A. ; Vannini, Giorgio (2003) VCO Behavioral Model Based on the Nonlinear-Discrete Convolution Approach. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Leuzzi, Giorgio ; Micheli, Claudio (2003) Variable-Load Constant-Efficiency Power Amplifier for Mobile Communications Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Whelan, C. S. ; Herrick, K. ; Leoni, R. E. ; Marsh, P. F. ; Zhang, Y. ; Lardizabal, S. ; Hoke, W. E. ; Lichwala, S. ; Kotce, J. ; Balas, P. ; Kazior, T. E. ; Laighton, D. (2003) W-band Metamorphic Low Noise and Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Abele, P. ; Ojefors, E. ; Schad, K.-B. ; Sonmez, E. ; Trasser, A. ; Konle, J. ; Schumacher, H. (2003) Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kaper, Val ; Thompson, Richard ; Prunty, Tom ; Shealy, James R. (2003) X-band AlGaN/GaN HEMT MMIC Vo ltage-Controlled Oscillator. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lee, Bok-Hyung ; Lim, Byeong-Ok ; Lee, Mun-Kyo ; Rhee, Jin-Koo (2003) fmax =433GHz from 0.1 ī-gate InGaAs/InAlAs/GaAs Metamorphic HEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cao, Xin ; Boyd, E. ; Mclelland, Helen ; Thoms, Stephen ; Holland, Martin ; Stanley, Colin ; Thayne, Iain (2003) mm-wave Performance of 50nm T-Gate AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistors with fT of 200 GHz. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

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