Browse the list: Convegni ed altri Eventi

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Number of documents:131.

Le Gallou, N. and Villemazet, J.F. and Cogo, B. and Cazaux, Jean-Louis and Mallet, A. and Lapierre, L. (2003) 10 W High Efficiency 14V HBT Power Amplifier for Space Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gu, Zheng and Thiede, Andreas and Möller, Lothar (2003) 20 Gbit/s Decision Feedback Loop for Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lefebvre, B. and Bessemoulin, A. (2003) 35-45 GHz Image Rejection Star Mixer for Up-and Down Conversion. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Werthof, Andreas (2003) 36-44 GHz HPAfor High Linearity Radio Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Centurelli, F. and Golfarelli, Alessandro and Guinea, Jesus and Masini, Leonardo and Morigi, Damiana and Pozzoni, Massimo and Scotti, Giuseppe and Trifiletti, Alessandro (2003) A 10 Gb/s CMU in SiGe BiCMOS commercial technology with multistandard capability. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bao, Mingquan and Li, Yinggang and Cathelin, Andreia (2003) A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tsenes, Petros and Uzunoglu, Nikolaos (2003) A 4-bit 7.5 GHz A/D Converter. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lee, Sang-Heung and Lee, Ja-Yol and Lee, Seung-Yun and Park, Chan Woo and Kim, Sang Hoon and Bae, Hyun-Chul and Kang, Jin-Yeong and Cho, Kyoung Ik (2003) A 5.8 GHz Mixer using SiGe HBT Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ueda, Hiro-omi and Shinjo, Shintaro and Nabeno, Yasuhiro and Ono, Masayoshi and Ohnakado, Takahiro and Murakami, Takaaki and Furukawa, Akihiko and Hashizume, Yasushi and Nishikawa, Kazuyasu and Mori, Takeshi and Yamakawa, Satoshi and Oomori, Tatsuo and Suematsu, Noriharu (2003) A 5GHz-Band On-Chip Matching CMOS MMIC Front-End. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Collins, Thomas E. and Betti-Berutto, A. and Long, Stephen I. (2003) A 75 GHz Current Mode Logic Static Frequency Divider Realized in a Commercially Available InP Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Butterworth, Peter and Charbonniaud, C. and Campovecchio, M. and Nallatamby, Jean-Christophe and Monnier, Marc and Lajugie, Monique (2003) A Balanced Sub-Harmonic Cold FET Mixer for 40GHz Communication Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bessemoulin, A. and Gaessler, C. and Marschall, P. and Quentin, P. (2003) A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

De Dominicis, M. and Giannini, F. and Scucchia, L. (2003) A Dual-Band MMIC Low frequency 180 ° Hybrid. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Acciari, G. and Colantonio, P. and De Dominicis, M. and Rossi, M. (2003) A Fast AM/AM and AM/PM Characterization Technique. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ó hAnnaidh, Breandán and Brazil, Thomas J. (2003) A Globally-Continuous, Charge-Conservative, Non-linear Equivalent Circuit Model For RF MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Camprini, M. and Magrini, Iacopo and Collodi, G. and Cidronali, A. and Nair, Vijay and Manes, Gianfranco (2003) A Hybrid Self-Oscillating Mixer Based on InP Heterojunction Interband Tunnel HEMT for Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tsai, Ming-Da and Liu, Ren-Chieh and Lin, Chin-Shen and Wang, Huei (2003) A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier InGaP. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kim, Moonjung and Cha, Jung-Ho and Shin, Seong-Ho and Jeon, Soo-Kun and Kim, Jaeho and Kwon, Young-Se (2003) A Monolithically Integrated InP-Based HBT and p-i-n Photodiode Using New Stack-Shared Layer Scheme. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Iommi, Roberto and Macchiarella, Giuseppe and Meazza, Andrea and Pagani, Maurizio (2003) A New Active Predistortion Linearizer Suitable for MMIC Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Fujimoto, Shinichi and Shuto, Hiroaki and Matsuura, Mitsuhiro and Yamamoto, Kazuya and Ishikawa, Takahide and Komaru, Makio and Matsuda, Yoshio (2003) A New Methodology to Enable Parameterized Cell Transfer between Microwave CADs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Hamed, Karim W. and Freundorfer, Alois P. and Antar, Yahia M.M. (2003) A Novel 20 to 40 GHz Monolithic InGaP/GaAs HBT Double Balanced Mixer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cidronali, A. and Collodi, G. and Accillaro, C. and Toccafondi, C. and Vannini, G. and Santarelli, A. and Manes, G. (2003) A Scalable PHEMT Model Taking Into Account Electromagnetic and Electro-Thermal Effects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kallfass, I. and Gruson, F. and Abele, P. and Michelakis, K. and Hackbarth, T. and Hieber, K.-H. and Müller, J. and Schumacher, H. (2003) A SiGe HEMT Mixer IC with Low Conversion Loss. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Wong, J. N. H. and Aitchison, C. S. (2003) A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Santarelli, Alberto and Paganelli, Rudi Paolo and Costantini, A. and Vannini, Giorgio and Filicori, Fabio (2003) A Simplified Approach for Quasi-linear Power Amplifier Distortion Evaluation. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Masud, Anowar and Ferndahl, M. and Zirath, Herbert (2003) A Variable gain MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Morigi, Damiana and Masini, Leonardo and Pozzoni, Massimo (2003) A Wideband Low Voltage Low Phase Noise 10-GHz SiGe Switchable VCO. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bertazzi, F. and Cappelluti, F. and Bonani, F. and Goano, M. and Ghione, G. (2003) A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

De Dominicis, M. and Giannini, F. and Limiti, E. and Serino, E. (2003) A novel noise model extraction technique for microwave and millimeter wave HEMT. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Massaro, A. and Mancini, V. and Di Donato, A. and Rozzi, T. (2003) Accurate Analysis of Polarization Coupling in Laminated Multilayered Thin Film Optical 3-D Waveguides. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Thayne, Iain and Boyd, E. and Cao, Xin and Elgaid, K. and Holland, Martin and McLelland, Helen and McEwan, Fiona and Macintyre, Douglas and Moran, David and Stanley, Colin and Thoms, Stephen (2003) Advanced III-V HEMT MMIC Technologies for Millimetre-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Piloto, Andrew J. and Yamada, Reiichi and Burgess, Jerry and Hall, Rick (2003) Advancement in T/R Module Interconnects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mokerov, V.G. and Velikovskii, L.E. and Kanametova, Z.T. and Kaminskii, V.E. and Sazonov, P.V. and Graul, J. and Semchinova, O. (2003) AlGaN/GaN-heterojunction FET with inverted 2DEG Channel. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Adahl, Andreas and Zirath, Herbert (2003) An 1 GHz Class E LDMOS Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gao, Jianjun and Li, Xiuping and Yang, Hong and Boeck, Georg (2003) An Approach to Determine and for InP HBT Using Cutoff Mode Measurement. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Loo-Yau, J.R. and Zúñiga-Juárez, J.E. and Hirata-Flores, F.I. and Reynoso-Hernández, J.A. (2003) An Improved GaAs FET Nonlinear Model Suitable for Intermodulation Analysis of Amplifiers,Switches and Resistive Mixers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Shouxian, Mou and Jianguo, Ma and Seng, Yeo Kiat and Anh, Do Manh (2003) An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cabral, Pedro Miguel and Borges Carvalho, Nuno and Pedro, José Carlos (2003) An Integrated View of Nonlinear Distortion Phenomena in Various Power Amplifier Technologies. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Viallon, Christophe and Tournier, Eric and Graffeuil, Jacques and Parra, Thierry (2003) An Original SiGe Active Differential Output Power Splitter for Millimetre-wave Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Polleux, J.L. and Moutier, F. and Billabert, A.L. and Rumelhard, C. and Sönmez, E. and Schumacher, H. (2003) An SiGe/Si Heterojunction Phototransistor for Opto-Microwave Applications:Modeling and first Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Dambrine, G. and Parenty, Thierry and Bollaert, S. and Happy, Henri and Cappy, A. and Mateos, Javier and Nahri, Tapani and Orlhac, Jean Claude and Trier, Marc and Baudet, Pierre and Landry, Patrice (2003) An overview of low noise devices and associated circuits for 100-200 GHz space applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Anakabe, A. and Collantes, J.M. and Portilla, J. and Jugo, J. and Mons, S. and Mallet, A. and Lapierre, L. (2003) Analysis of Odd-Mode Parametric Oscillations in HBT Multi-Stage Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van Bezooijen, André and Prikhodko, Dima and van Roermund, A.H.M. (2003) Biasing Circuits for Voltage Controlled GSM Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Leuzzi, Giorgio and Di Paolo, F. (2003) Bifurcation Synthesis by means of Harmonic Balance and Conversion Matrix. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Simburger, Werner and Kehrer, Daniel and Tiebout, Marc and Wohlmuth, Hans-Dieter and Knapp, Herbert and Wurzer, Martin and Perndl, Werner and Rest, Mirjana and Kienmayer, Christoph and Thuringer, Ronald and Bakalski, W. and Scholtz, Arpad L. (2003) CMOS and SiGe Bipolar Circuits for High-Speed Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Chandrasekhar, Arun and Stoukatch, Serguei and Brebels, S. and Balachandran, Jayaprakash and Beyne, Eric and De Raedt, W. and Nauwelaers, Bart and Poddar, Anindya (2003) Characterisation, Modelling and Design of Bond-Wire Interconnects for Chip-Package Co-Design Insertion Loss (dB). In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Malaver, Emigdio and Garcıa, Jose Angel and Tazon, Antonio and Mediavilla, Angel (2003) Characterizing the Linearity Sweet-Spot Evolution in FET Devices. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Issaoun, I. and Dousset, D. and Kouki, A.B. and Ghannouchi, F.M. (2003) Comparison of a New Modified Gummel-Poon Model and VBIC for AlGaAs/GaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Nuttinck, S. and Pinel, S. and Gebara, E. and Laskar, J. and Harris, M. (2003) Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Giorgio, Agostino and Perri, Anna Gina (2003) Design of Photonic Crystals Devices with Defects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

García, J.A. and Malaver, E. and Cabria, L. and Gómez, C. and Mediavilla, A. and Tazón, A. (2003) Device-level Intermodulation Distortion Control on III-V FET ’s Abstract. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cibiel, G. and Llopis, O. and Escotte, L. and Haquet, G. (2003) Devices selection for S to X bands low phase noise oscillator design. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sotero, Sonia and Herrera, Amparo and Cabo, Javier (2003) Dual Band Monolithic AGC Amplifier for Space Applications based on a commercial 0.2 µm PHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Detratti, Marco and Chuan, Jeffrey and Pascual, Juan Pablo and García, José Luis and Cabo, Javier (2003) E/D pHEMT Multi Frequency Generator GaAs MMIC for Aerospace Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tassetti, Charles-Marie and Lissorgues, Gaëlle and Gilles, Jean-Paul (2003) Effects of a loop array layer on a micro-inductor for future RF MEMS Components. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Charbonniaud, C. and De Meyer, S. and Quéré, R. and Teyssier, JP. (2003) Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Vandersmissen, Raf and Schreurs, Dominique and Carchon, G. and Borghs, G. (2003) Feedback Amplifier based on an Embedded HEMT in Thin-film Multilayer MCM-D Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Wang, Guoan and Bacon, Andrew and Abdolvand, Reza and Ayazi, Farrokh and Papapolymerou, John and Tentzeris, Emmanouil M. (2003) Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Seemann, Kay and Ramberger, Suitbert and Tessmann, Axel and Quay, Rudiger and Schneider, Joachim and Rießle, Markus and Walcher, Herbert and Kuri, Michael and Kiefer, Rudolf and Schlechtweg, Michael (2003) Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Coustou, A. and Sie, M. and Dubuc, D. and Graffeuil, J. and Tournier, E. and Llopis, O. and Plana, R. (2003) Frequency synthesis from 2 to 30 GHz using a 0.35 µm BiCMOS SiGe technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van Vliet, F.E. and van Wanum, M. and Roodnat, A.W. and Alfredson, M. (2003) Fully-integrated wideband TTD core chip with serial control. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Paparo, Mario and Erratico, Pietro and Murari, Bruno (2003) Future Trends in Si Technology/ICs for RF Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Muller, Alexandru and Konstantinidis, George and Neculoiu, Dan and Plana, Robert (2003) GaAs MEMS for Millimeter Wave Communications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Arena, M. and Belperio, F. and Calderone, L. and Comparini, M.C. and Leone, C. and Simone, L. (2003) GaAs, Advanced RF CMOS and Silicon Components for Miniaturised Space Digital Receiver. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Collodi, G. and Cidronali, A. and Toccafondi, C. and Santarelli, A. and Vannini, G. (2003) Global modeling approach to the design of an MMIC amplifier using Ohmic Electrode-Sharing Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Parvais, B. and Cerderia, A. and Schreurs, D. and Raskin, J.-P. (2003) Harmonic Distortion Characterization of SOI MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Subramaniam, Suba C. and Rezazadeh, Ali A. (2003) He + -and Fe+ -ion bombardments in the electrical isolation of InP/InGaAs HBT Structures. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cao, Xin and Thayne, Iain and Thoms, Stephen and Holland, Martin and Stanley, Colin (2003) High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Morris, Arthur S. and Cunningham, Shawn and Dereus, Dana and Schröpfer, Gerold (2003) High-Performance Integrated RF-MEMS: Part 1-The Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Murata, Koichi and Enoki, Takatomo and Sugahara, Hirohiko and Tokumitsu, Masami (2003) ICs for 100 Gbit/s Data Transmission. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Rodwell, M. and Scott, D. and Urteaga, M. and Dahlström, M. and Griffith, Z. and Wei, Y. and Parthasarathy, N. and Kim, YM and Pierson, R. and Rowell, P. and Brar, B. (2003) InP Bipolar Transistors:High Speed Circuits and Manufacturable Submicron Fabrication Processes. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zirath, Herbert and Grahn, Jan and Rorsman, Niklas and Mellberg, Anders and Stake, Jan and Angelov, I. and Starski, Piotr (2003) InP HEMTs and HBVs for Low Noise and Ultra-High Speed:Device and Circuit Research at Chalmers University of Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Neumann, S. and Prost, W. and Tegude, F.-J. (2003) InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Watanabe, Noriyuki and Uchida, Masahiro and Yokohama, Hideo and Araki, Gako (2003) Influence of carbon sources on thermal stability of C-doped base InP/InGaAs heterojunction bipolar transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zucchelli, G. and Santarelli, A. and Raffo, A. and Vannini, G. and Filicori, F. (2003) Influence of dispersive effects on large-signal models based on differential parameter integration. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Schlechtweg, Michael and Tessmann, Axel and Leuther, Arnulf and Schwörer, Christoph and Lang, Manfred and Nowotny, Ulrich and Kappeler, Otmar (2003) Integrated Circuits Based on 300 GHz fT Metamorphic HEMT Technology for Millimeter-Wave and Mixed-Signal Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Di Marcantonio, U. and Di Nardo, I. and Tursini, M. and Comparini, M.C. and Novello, R. and Leone, C. (2003) Integrated Substrate Packaging Based on LTCC and HTCC Technologies for Highly Integrated Space Equipment. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sonmez, E. and Trasser, A. and Abele, P. and Schad, B. and Schumacher, H. (2003) Integrated receiver components for low-cost 26 GHz LMDS applications using an 0.8 um Sige HBT technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Long, Sabine and Escotte, L. and Graffeuil, Jacques and Fellon, P. and Roques, Daniel (2003) Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van der Graaf, M.W. and van Wanum, M. and Maas, A.P.M. and Suijker, E.M. and Knight, A. and Ludwig, M. (2003) L-Band MMICs for Space-based SAR system. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sutton, William E. and Pavlidis, Dimitris and Lahrèche, Hacène and Damilano, Benjamin and Langer, Robert (2003) Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Basaran, U. and Berroth, M. (2003) Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method W. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bonani, F. and Donati Guerrieri, S. and Ghione, G. (2003) Large-signal compact diode noise modelling strategies for non-autonomous RF nonlinear applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lien, Y. C. and Chang, E. Y. and Chang, H. C. and Chu, L. H. and Huang, K. W. and Lee, H. M. and Lee, C. S. and Chen, S. H. and Shen, P. T. (2003) Low Noise Metamorphic HEMTs with Reflowed Submicron T-Gate. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mheen, Bongki and Park, Chan Woo and Kim, Sang Hoon and Kang, Jin-Yeong and Hong, Songcheol (2003) Low noise amplifiers in SiGe hetero-junction bipolar process using reduced pressure chemical vapor deposition. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bielecki, Z. and Kolosowski, W. and Dufrene, R. and Borejko, M. (2003) Low noise optical receivers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Schwörer, C. and Tessmann, A. and Leuther, A. and Massler, H. and Reinert, W. and Schlechtweg, M. (2003) Low-Noise W-Band Amplifiers for Radiometer Applications Using a 70 nm Metamorphic HEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Comparini, M.C. and Linkowski, J. R. and Montanucci, P. and Pizzuti, E. and Suriani, A. and Vasarelli, F. (2003) Low-cost, low-mass ltcc down converter for communication satellite payloads. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gomez–Garcıa, Roberto and Briso–Rodrıguez, Cesar and Mahfoudi, Mustapha and Alonso, Jose I. (2003) MMIC Tunable Transversal Bandpass Active Filter at 9–12 GHz. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Brown, April S. and Jokerst, Nan Marie and Brooke, Martin A. and Kuech, Thomas and Kuan, T.S. (2003) Materials to Microsystems:Heterogeneous Integration Technologies. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Hoffmann, Sebastian and Thiede, Andreas and Tommasino, Pasquale and Trifiletti, Alessandro and Vannucci, Antonello (2003) Measurement-based models of a 40 Gb/s modulator and its electrical driver for joint transmitter design. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Jin, Z. and Neumann, S. and Prost, W. and Tegude, F.-J. (2003) Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNx. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Osorio, Ricardo and Klein, Mona and Massler, H. and Korvink, Jan G. (2003) Micromachined Strip Line with SU-8 as the Dielectric. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Caloz, Christophe and Sanada, Atsushi and Itoh, Tatsuo (2003) Microwave Circuits Based on Negative Refractive Index Material Structures. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Deborgies, F. (2003) Microwave Technologies for Satellite Systems:an ESA Perspective. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ceylan, N. and Mueller, J.E. and Pittorino, T. and Weigel, R. (2003) Mobile Phone Power Amplifier Linearity and Efficiency Enhancement Using Digital Predistortion. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cavanna, T. and Feudale, M. and Ranieri, P. and Suriani, A. (2003) Multifunction MMIC For Miniaturized Solid State Switch Matrix. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Giannini, F. and Colantonio, P. and Leuzzi, G. and Orengo, G. and Serino, A. (2003) Neural-Based Nonlinear Device Models for Intermodulation Analysis. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Shur, Michael S. and Ryzhii, Victor (2003) New Concepts for Submillimeter-Wave Detection and Generation. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Balsi, Marco and Centurelli, F. and Forte, Alessandra and Scotti, Giuseppe and Tommasino, Pasquale and Trifiletti, Alessandro (2003) Non-Linear Statistical Modelling of GaAs FET Integrated Circuits Using Principal Component Analysis Abstract. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zamanillo, J.M. and Portilla, J. and Navarro, C. and Pérez-Vega, C. and Mediavilla, A. (2003) Optical Control of a GaAs Chip MMIC Amplifier at S Band. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

SuH, Youngsuk and Kim, I.S. and Song, J.S. (2003) Optimal Parameter Extraction Scheme of Current Sources and Bias Dependent Elements for HBT by searching the whole unknown Parameter Space. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zlámal, Jan and Myslík, Vladimír and Machác, Petr (2003) Pd/In-based Ohmic Contacts to n-GaAs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Reedy, Ronald E. (2003) Perspective of RF CMOS/Mixed Signal Integration in Next Generation Satellite Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kasai, D. and Kazami, Y. and Mitani, Y. and Horio, K. (2003) Physics-Based Device Simulation of Lag and Power Compression in GaAs FETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Auxemery, Ph. and Pataut, G. and Blanck, H. and Doser, W. (2003) Power HBT reliability for space applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Palomba, Francesco and Pagani, Maurizio and De Francesco, I. and Meazza, Andrea and Mornata, Alessandro and Procopio, Gregorio and Sivverini, Giuseppe (2003) Process-Tolerant High Linearity MMIC Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Machác, Petr and Žilka, Martin and Výborný, ZdeneČk (2003) Pt/GaAs side wall Schottky diode. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cidronali, A. and Loglio, G. and Jargon, J. and Remley, K.A. and Magrini, I. and DeGroot, D. and Schreurs, D. and Gupta, K.C. and Manes, G. (2003) RF and IF mixer optimum matching impedances extracted by large-signal vectorial measurements. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Melle, S. and Flourens, F. and Dubuc, D. and Grenier, K. and Pons, P. and Pressecq, F. and Kuchenbecker, J. and Muraro, J.L. and Bary, L. and Plana, R. (2003) Reliability Overview of RF MEMS Devices and Circuits. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Park, Min and Ahn, Hokyun and Kang, Dong Min and Ji, Honggu and Mun, Jaekyoung and Kim, Haecheon and Cho, Kyoung Ik (2003) Single Supply,High Linearity,High Efficient PHEMT Power Devices and Amplifier for 2 GHz &5 GHz WLAN Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Brabetz, T. and Fusco, Vincent F. (2003) Six-Port Receiver Front-End MMIC for V-Band MBS Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Moreira, Alberto and Krieger, Gerhard (2003) Spaceborne Synthetic Aperture Radar (SAR)Systems: State of the Art and Future Developments. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Melczarsky, I. and Costantini, A. and Zucchelli, G. and Paganelli, R.P. and Santarelli, A. and Vannini, G. and Filicori, F. (2003) Statistical modelling of electron devices based on an equivalent-voltage approach. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sheng, H. and Rezazadeh, A.A (2003) Study of temperature dependence of turn-on voltages IN III-V HBTS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Johansen, Tom K. and Vidkjaer, Jens and Krozer, Viktor (2003) Substrate Effects in SiGe HBT Modeling. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Pinel, S. and Lim, K. and DeJean, R.G. and Li, L. and Lee, C-H. and Maeng, M. and Davis, M.F. and Tentzeris, M. and Laskar, J. (2003) System-on-Package (SOP) Architectures for compact and low cost RF Front-end modules. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Joe, Jin Hyoun and Missous, Mohamed (2003) The Effects of Compositionally Graded Bases and Annealing on InGaP-GaAs HBTs Grown by MBE using a GaP Decomposition Source. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mishra, Meena and Muralidharan, R. and Harsh, * and Islam, S.S. and Das, Mukunda B. (2003) The Effects of Extended Depletion Region on Noise Modeling of HEMT ’s. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Chertouk, M. and Chang, W.D. and Yuan, C.G. and Chen, C.H. and Tu, D.W. (2003) The First 0.15um MHEMT 6 ”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Forestier, S. and Gasseling, T. and Bouysse, P. and Barataud, D. and Quere, R. and Nebus, J.M. (2003) Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sexton, James and Missous, Mohammed (2003) Thermal Stability of Beryllium Doped InP/InGaAs Single and Double HBTs Grown by Solid Source Molecular Beam Epitaxy. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Farina, M. and Rozzi, Tullio (2003) Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Issaoun, A. and Dousset, D. and Kouki, A.B. and Ghannouchi, F.M. (2003) Transcapacitances and Bias Dependent Time Delay and Base Resistance Expressions for Accurate Large Signal Modeling of HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cignani, R. and Costantini, A. and Vannini, Giorgio (2003) VCO Behavioral Model Based on the Nonlinear-Discrete Convolution Approach. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Leuzzi, Giorgio and Micheli, Claudio (2003) Variable-Load Constant-Efficiency Power Amplifier for Mobile Communications Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Whelan, C. S. and Herrick, K. and Leoni, R. E. and Marsh, P. F. and Zhang, Y. and Lardizabal, S. and Hoke, W. E. and Lichwala, S. and Kotce, J. and Balas, P. and Kazior, T. E. and Laighton, D. (2003) W-band Metamorphic Low Noise and Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Abele, P. and Ojefors, E. and Schad, K.-B. and Sonmez, E. and Trasser, A. and Konle, J. and Schumacher, H. (2003) Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kaper, Val and Thompson, Richard and Prunty, Tom and Shealy, James R. (2003) X-band AlGaN/GaN HEMT MMIC Vo ltage-Controlled Oscillator. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lee, Bok-Hyung and Lim, Byeong-Ok and Lee, Mun-Kyo and Rhee, Jin-Koo (2003) fmax =433GHz from 0.1 ī-gate InGaAs/InAlAs/GaAs Metamorphic HEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cao, Xin and Boyd, E. and Mclelland, Helen and Thoms, Stephen and Holland, Martin and Stanley, Colin and Thayne, Iain (2003) mm-wave Performance of 50nm T-Gate AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistors with fT of 200 GHz. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

This list has been generated onMon Jan 25 20:39:23 2021 CET.
^