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Darbandi, A. ; Zoyo, M. ; Loval, L. ; Buret, H. ; Michard, F. (2000) 10W C-BAND highly efficient HYBRID-MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hue, X. ; Rogeaux, E. ; Cazaux, Jean-Louis ; Mallet, A. ; Lapierre, L. ; Boudart, B. ; Bonte, B. ; Crosnier, Y. (2000) 1W/mm GaAs pHEMT for realization of linear power amplifier in the K band. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rasà, F. ; Celestino, F. ; Remonti, M. ; Gabbrielli, B. ; Quentin, P. (2000) 37-40GHz MMIC Sub-Harmonically Pumped Image Rejection Diode Mixer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

König, Frédy ; Shimizu, Haruo ; Takahashi, Hidenori ; Miyazawa, Shigemi ; Fukaya, Jun (2000) 4W GaAs MMIC Power Amplifier for PCS and W-CDMA Base Station. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Raynaud, C. ; Faynot, O. ; Pelloie, J.-L. ; Tabone, C. ; Grouillet, A. ; Martin, F. ; Dambrine, G. ; Vanmackelberg, M. ; Picheta, L. ; Mackowiak, E. ; Brut, H. ; Llinares, P. ; Sevenhans, J. ; Compagne, E. ; Fletcher, G. ; Flandre, D. ; Dessard, V. ; Vanhoenacker, D. ; Raskin, J.-P. (2000) 70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mueller, J.-E. ; Gerlach, U. ; Madonna, G.L. ; Pfost, M. ; Schultheis, R. ; Zwicknagl, P. (2000) A 3V small chip size GSM HBT power MMIC with 56% PAE. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mediavilla, A. ; Tazon, A. ; Garcia, J.A. ; Zamanillo, J.M. ; Fernandez, T. (2000) A Coherent Small/Large Signal FET model Based on Neuronal Architectures 1. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hirachi, Yasutake ; Nakano, Hiroshi ; Kato, Akihito (2000) A Cost-Effective Receiver-Module with Built-in Patch Antenna for Millimeter-Wave Wireless Systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sun, Y. ; Tieman, T. ; Pflug, H. ; Velthuis, W. (2000) A Fully Integrated Dual-Frequency Push-Push VCO for Wideband Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Quentin, P. ; Gallien, A. ; Rasà, F. ; Gabbrielli, B. (2000) A GaAs MMIC chip-set for 10 to 15GHz radio-links applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ichikawa, S. ; Satoh, T. ; Shimura, T. ; Betti-Berutto, A. ; Furukawa, Y. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J. (2000) A Gate Bias Free P wer MMIC Module for Ka-Band High-speed Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tavernier, Christophe A. ; Henderson, Rashaunda ; Papapolymerou, John (2000) A Hybrid Micromachined High -Q Cavity Resonator at 5.8 GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zelley, C. A. ; Gould, P. A. ; Munday, P. D. ; Ashcroft, R. W. (2000) A J-band Transceiver MMIC with image rejection. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hayashi, Hisanori ; Ui, Norihiko ; Saito, Toshiaki ; Fukaya, Jun (2000) A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Simon, H. ; Périchon, R.A (2000) A MMIC broad-band 90° power divider using a new all-pass active filter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cidronali, A. ; Collodi, G. ; Deshpande, M. ; El-Zein, N. ; Goronkin, H. ; Manes, G. ; Nair, V. ; Toccafondi, C. (2000) A MMIC lumped element directional coupler with arbitrary characteristic impedance and its application. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ang, K.S. ; Robertson, I.D. (2000) A Monolithic Double-balanced Upconverter for millimeter-wave Point-to-Multipoint Distribution Systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Devlin, L. ; Dearn, A.W. ; Beasley, P.D.L. (2000) A Monolithic, Dual Channel, 0.5 to 20GHz Limiter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bousnina, S. ; Ghannouchi, Fadhel M. ; Surridge, R. (2000) A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bousnina, S. ; Ghannouchi, Fadhel M. ; Surridge, R. (2000) A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Olavsbråten, Morten (2000) A Practical Method of Parameter Extraction for the VBIC Model used on a GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Duchamp, G. ; Gauffre, S. ; Casadebaig, L. ; Pistre, J. (2000) A broadband microwave amplifier using multilayer technology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Pagani, M. ; Favre, G. ; Andersson, H. ; Carminati, M. (2000) A fully integrated monolithic local oscillator for LMDS radio link applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Vaudescal, O. ; Kabat, D. ; Couturier, A.M. ; Sevin, R. ; Dourlens, C. ; Quentin, P. (2000) A highly integrated MMIC Chipset for 40 GHz MVDS Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Vaudescal, O. ; Lefebvre, B. ; Couturier, A.M. ; Sevin, R. ; Dourlens, C. ; Quentin, P. (2000) A highly integrated MMIC chipset for 28 GHz LMDS Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rao, Nagaraja ; Parfitt, Andrew ; Dadello, Anna ; Ward, Damon ; Bird, Trevord (2000) A low noise KA-BAND down converter for space applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Laloue, A. ; Camiade, M. ; Valenza, M. ; Vildeuil, J.C. ; Nallatamby, J.C. ; Prigent, M. ; Obregon, J. ; Quéré, R. (2000) A measurement based model of HEMT teking into account the non linear, non uniform transmission line nature of the channel its associated low frequency noise sources. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Brabetz, T. ; Fusco, V.F. (2000) A new technique for noise figure measurements of millimetre-wave mixers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Roques, Daniel ; Brasseau, F. ; Cogo, B. ; Soulard, Michel ; Cazaux, Jean-Louis (2000) A non quasi-static non-linear P-HEMT model operating up to millimetric frequencies. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Avitabile, G. ; Chellini, B. ; Giannini, F. ; Limiti, E. (2000) A novel high Q active inductor for millimeter wave applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Le Gallou, N. ; Barataud, D. ; Buret, H. ; Nebus, J.M. ; Ngoya, E. (2000) A novel measurement method for the extraction of dynamic Volterra Kernels of microwave power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Centurelli, F. ; Luzzi, R. ; Olivieri, M. ; Pennisi, S. ; Trifiletti, A. (2000) A novel topology for a HEMT negative current mirror. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zamanillo, J.M. ; García, J.A. ; Mediavilla, A. ; Tazón, A. ; Pérez-Vega, C. (2000) A straightforward method for determining SiGe HBTs intrinsic elements of hibrid PI and TEE small-signal circuit models for multibias operation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Heymann, P. ; Doerner, R. ; Rudolph, M. (2000) A universal measurement system for microwave power transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Saglam, M. ; Bozzi, M. ; Domoto, C. ; Megej, A. ; Rodriguez–Girones, M. ; Perregrini, L. ; Hartnagel, H.L. (2000) ALGAAS HBV performance in frequency tripling at 255 GHZ. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Giannini, Franco ; Graglia, Fabio ; Leuzzi, Giorgio ; Serino, Antonio (2000) Accurate microwave characterisation of power LD-MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

McGarvey, B. ; Staiculescu, D. ; Tentzeris, M. ; Laskar, J. (2000) Adaptive Modeling of Complex Packaging Geometries Using Haar-based MRTD Algorithms. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Gaye, M. ; Ajram, S. ; Maynadier, P. ; Salmer, G. (2000) An ultra-high switching frequency step-down DC-DC converter based on Gallium Arsenide devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Adirosi, F. ; Comparini, M.C. ; Leone, C. (2000) Application of Silicon-based RF IC devices in space communication systems &equipment. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Goyal, Ravender ; Veremey, Vladimir (2000) Application of neural networks to efficient design of wireless and RF circuits and systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Giannini, F. ; Leuzzi, G. ; Orengo, G. ; Albertini, M. (2000) Artificial neural network approach for MMIC passive and active device characterization. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cappelluti, F. ; Mathai, S. ; Wu, M.C. ; Ghione, G. (2000) Balanced Electroabsorption Modulator for High-Linearity, Low-Noise Microwave Analog Optical Link. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Menozzi, R. (2000) Breakdown and high-field reliability issues in heterojunction FETs for microwave power amplification. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Alekseev, Egor ; Hsu, Shawn S.H. ; Pavlidis, Dimitris (2000) Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Frank Chau, H.-F. ; Chen, Zhengming ; Larry Wang, N.-L. ; Sun, Xiaopeng ; Lin, Barry (2000) Conversion of AlGaAs intoInGaP emitter HBT RF ICs for improved manufacturability. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Weinreb, S. ; Gaier, T. ; Fernandez, J.E. ; Erickson, N. ; Wielgus, J. (2000) Cryogenic MMIC low noise amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bij de Vaate, J.G. ; Woestenburg, E.E.M. ; Witvers, R.H. ; Pantaleoni, R. (2000) Decade Wide Bandwidth Integrated Very Low Noise Amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Pozela, J. ; Pozela, K. ; Juciene, V. (2000) Decrease of Modfet channel conductivity with increasing sheet electron concentration. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Biron, Frédéric ; Plaze, Jean-Philippe ; Billonnet, L. ; Cros, D. ; Jarry, Bernard ; Guillon, Pierre (2000) Design Procedure for Loss Compensation of Planar Microwave Filters Using Negative Resistances For Tuneable Bandstop and Bandpass Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Kim, Dong-Wook ; Paek, Seung-Won ; Lee, Jae-Hak ; Jeon, Kye-Ik ; Lim, Chae-Rok ; Kwon, Young-Woo ; Chung, Ki-Woong (2000) Design and Fabrication of 77GHz HEMT Mixer Modules using Experimentally Optimized Antipodal Finline Transitions. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bos, Thomas A. ; Camargo, E. (2000) Design of PHEMT Diodes for MMIC Mixer Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rizk, Jad B. ; Muldavin, Jeremy B. ; Tan, Guan-Leng ; Rebeiz, Gabriel M. (2000) Design of X-Band MEMS Microstrip Shunt Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bessemoulin, A. ; Marsetz, W. ; Baeyens, Y. ; Osorio, R. ; Massler, H. ; Hülsmann, A. ; Schlechtweg, M. (2000) Design of coplanar power amplifiers for MM-WAVE system applications including thermal aspects. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mateos, Javier ; González, Tomas ; Pardo, Daniel (2000) Design optimisation of ultra-short gate HEMTS using MONTE CARLO simulation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Emanuelsson, Thomas ; Thöresson, Stefan (2000) Design techniques for linear requirements for MMIC power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Monfraix, P. ; Adam, T. ; Lacoste, J.L. ; Drevon, C. ; Naudy, G. ; Cogo, B. ; Cazaux, Jean-Louis ; Roux, J.L. (2000) Design to reliability shielded vertical interconnection applied to microwave Chip Scale Packaging. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Schreurs, D. ; Vandamme, E. ; van Dinther, C. (2000) Development and verification of a non-linea look-up table model for mosfets. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Schreurs, D. ; Tufillaro, N. ; Wood, J. ; Usikov, D. ; Barford, L. ; Root, D.E. (2000) Development of time domain behanioural non-linear models for microwave devices and ICS from vectorial large-signal measurements and simulations. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Casu, M.R. ; Lanzieri, C. ; Masera, G. ; Piccinini, G. ; Zamboni, M. (2000) Digital Circuits in a Multi-Functional SAGFET MMIC Technology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Merrar, A. ; Deshours, F. ; Algani, C. ; Nardini, C. ; Alquié, G. (2000) Direct digital modulation introduced via optically-controlled GAPS in active MMIC on GaAs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cavassilas, N. ; Aniel, F. ; Nojeh, A. ; Adde, R. ; Zaknoune, M. ; Bollaert, S. ; Cordier, Y. ; Theron, D. ; Cappy, A. (2000) Electroluminescence of metamorphic In x Al 1-x As / In x Ga 1-x As HEMTs ON GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sommet, R. ; Lopez, D. ; Quéré, R. (2000) Electrothermal harmonic balance simulation of an INGAP/GAAS HBT based on 3D thermal and semiconductor transport models. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tkachenko, Y. ; Zhao, Y. ; Wei, C. ; Bartle, D. (2000) Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Stenarson, Jörgen ; Wadefalk, Niklas ; Garcia, Mikael ; Angelov, I. ; Zirath, Herbert (2000) FET Noise Model Extraction Methods. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Costantini, A. ; Paganelli, Rudi ; Traverso, Pier Andrea ; Zucchelli, Giorgia ; Santarelli, Alberto ; Vannini, Giorgio ; Filicori, Fabio ; Monaco, Vito Antonio (2000) FMM and NDC technology-independent finite-memory nonlinear device models: ADS implementation and large-signal validation results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ponchak, George E. ; Simons, Rainee N. ; Scardelletti, Maximilian C. ; Varaljay, Nicholas C. (2000) Finite Ground Coplanar Waveguide Shunt MEMS Switches for Switched Line Phase Shifters. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

George, Sebastien ; Drevon, C. ; Cazaux, Jean-Louis (2000) Flip-chip for space applications : Bonding reliability, DC and RF results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Megej, A. ; Beilenhoff, K. ; Hartnagel, H.L. (2000) Fully Integrated PHEMT Voltage Controlled Oscillator with Very High Tuning Bandwidth. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Camiade, M. ; Domnesque, D. ; Ouarch, Z. ; Sion, A. (2000) Fully MMIC-Based Front End for FMCW Automotive Radar at 77GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Comparini, M.C. ; Feudale, M. ; Linkowski, J.R. ; Ranieri, P. ; Suriani, A. (2000) Fully integrated Ka/K band hermetic receiver module. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Lapin, V.G. ; Temnov, A.M. ; Krasnik, V.A. ; Petrov, K.I. (2000) GAAS Microwave offset gate self-aligned MESFETs and their applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

de Boer, A. ; Mouthaan, K. (2000) GaAs mixed signal multi-function X-BAND MMIC with 7 bit phase and amplitude control and integrated serial to parallel converter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Boudrissa, M. ; Delos, E. ; Cordier, Y. ; Theron, D. ; De Jaeger, J.C. (2000) Gate ionization current of an Enhancement-Mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Alleaume, P.F. ; Auxemery, Ph. ; Viaud, J.P. ; Blanck, H. ; Lajugie, M. (2000) HBT technology for high power X band and broadband amplification. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Acciari, G. ; Giannini, F. ; Leuzzi, G. ; Saggio, G. (2000) Harmonic Solution for Periodic Waveforms of the BTE ’s for Microwave and Millimetre-Wave Active Device Modelling. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Dillner, Lars ; Ingvarson, Mattias ; Kollberg, Erik ; Stake, Jan (2000) Heterostructure barrier varactor multipliers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Betti-Berutto, A. ; Poledrelli, C. ; Benelbar, R. ; Chen, S.T. ; Khandavalli, C. ; Satoh, T. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J. (2000) High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bouisse, Gerard (2000) High Power silicon MMIC design for wireless base stations. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

DeLuca, P.M. ; Rodrigues, J. ; Han, B.-K. ; Pan, N. (2000) High Uniformity 6” InGaP/GaAs Heterojunction Bipolar transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Butel, Y. ; Adam, T. ; Cogo, B. ; Soulard, M. (2000) High efficiency LOW AM/PM 6W C-band MMIC power amplifier for a space radar program. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Grenier, K. ; Pons, P. ; Plana, R. ; Cazaux, Jean-Louis ; Boulanger, C. ; Parra, T. ; Graffeuil, J. (2000) Highly compact micro-machined coplanar bandpass filter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Colantonio, P. ; Giannini, F. ; Leuzzi, G. ; Limiti, E. (2000) IMD Performances of Harmonic Tuned Microwave Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ladbrooke, P.H. ; Bridge, J.P. ; Goodship, N.J. ; Battison, D.J. (2000) Improving understanding of the RF circuit behaviour of contemporary semiconductor devices through fast-sampling I (V)Curve tracer measurement. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Kim, S-O. ; Velling, P. ; Agethen, M. ; Reimann, Th. ; Prost, W. ; Tegude, F.-J. (2000) InP-BASED HBT with graded InGaAlAs BASE layer grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Blanck, H. ; Riepe, K.J. ; Doser, W. ; Auxemery, P. ; Pons, D. (2000) Industrial GaInP/GaAs Power HBT MMIC Process. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bue, F. ; Gaquière, C. ; Hue, X. ; Boudart, B. ; Crosnier, Y. ; De Jaeger, J.C. ; Carnez, B. ; Pons, D. (2000) Influence of recess and epilayers in the 26 – 40 GHz band HEMT’s intermodulation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Blondy, P. ; Baleras, F. ; Cros, D. ; Massit, C. ; Guillon, P. ; Zanchi, C. ; Lapierre, L. ; Sombrin, J. (2000) Integrated Millimeter-Wave Silicon Micromachined Filters. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ageeva, N. N. ; Bronevoi, I. L. ; Krivonosov, A. N. (2000) Interconnection between the picosecond stimulated recombination emission and the kinetics of dense hot electron-hole plasma in GaAs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ulian, Patrice ; Leveque, Hervé ; Recly, Agnes ; Cayrou, Jean-Christophe ; Cogo, B. ; Cazaux, Jean-Louis (2000) KA-BAND equipment assembly for multimedia satellite payloads. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Stevens, K.S. ; Welser, R.E. ; Chaplin, M. ; Lutz, C.R. ; Pan, N. (2000) Ledge Design of InGaP Emitter GaAs Based HBTs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Whelan, C.S. ; Marsh, P.F. ; Lardizabal, S.M. ; Hoke, W.E. ; McTaggart, R.A. ; Kazior, T.E. (2000) Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cojocaru, Vicentiu I. ; Brazil, Thomas J. (2000) Low frequency dispersion effects on the input characteristics of microwave FETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ferrero, A. ; Ghione, G. ; Mantione, F. ; Nespola, A. ; Pensa, S. ; Pirola, M. (2000) MM-wave on-wafer characterization of electro-optic devices: a new, simple approach. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Enz, Christian (2000) MOS Transistor Modeling for RF IC Design. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Grzegorczyk, Tomasz M. ; Zurcher, Jean-François ; Renaud, Philippe ; Mosig, Juan R. (2000) Micromachined Horn Antenna Operating at 75 GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mann, C.M. (2000) Micromachining in Terahertz technology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Esashi, M. (2000) Microsystems by Bulk micromachining. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mounaix, P. ; Arscott, S. ; David, T. ; Podevin, F. ; Mélique, X. ; Lippens, D. (2000) Microtechnologies for the monolithic fabrication of mm and submm non linear devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tan, Guan-Leng ; Rebeiz, Gabriel M. (2000) Microwave Absorptive MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Schaffner, James H. ; Loo, Robert Y. ; Quan, Clifton ; Allison, Robert C. ; Pierce, Brian M. ; Livingston, Stanley W. ; Schmitz, Adele E. ; Hsu, Tsung-Yuan ; Sievenpiper, Daniel F. ; Dolezal, Frank A. ; Tangonan, Gregory L. (2000) Microwave Components with MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Goffioul, M. ; Raskin, J.-P. ; Vanhoenacker-Janvier, D. (2000) Microwave Integrated CMOS Oscillators on Silicon-on-insulator Substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Comparini, M.C. ; Giubilei, R. ; Tranquilli, P. (2000) Microwave equipment for navigation Overlay (NOS) service. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sajin, George ; Matei, Elena ; Marcelli, Romolo (2000) Microwave tunable straight edge resonator on silicon membrane. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cidronali, A. ; Collodi, G. ; Santarelli, A. ; Vannini, G. ; Toccafondi, C. (2000) Millimeter-wave FET modeling based on a frequency extrapolation approach. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ohata, Keiichi (2000) Millimeter-wave IC packaging technology-state of the art and future trends. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Garlapati, Akhil ; Prasad, Sheila (2000) Modeling of Current-gain Collapse in Multi-finger HBT ’s. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sacconi, Fabio ; Di Carlo, A. ; Della Sala, F. ; Lugli, P. (2000) Modeling of GaN-based heterostructure devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mahmood, M.R. ; Hu, Z.R. (2000) Modelling of 3D Multilayer Coplanar Waveguide Structure with Incorporated Wideband Vertical Interconnection. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Galwas, Bogdan A. ; Dawidczyk, Jaroslaw ; Chyzh, Aleksander ; Malyshev, Sergei A. (2000) Modelling of responsivity of INP-PIN photodiode for studying optical-microwave frequency conversion processes. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mokerov, V.G. ; Fedorov, Yu.V. ; Hook, A.V. ; Velikoski, L.E. (2000) Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zoschg, Dietmar ; Wilhelm, Wilhelm ; Knapp, Herbert ; Aufinger, K. ; Bock, Josef ; Meister, T.F. ; Wurzer, Martin ; Wohlmuth, Hans-Dieter ; Scholtz, Arpad L. (2000) Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ziegler, Volker ; Gässler, Christoph ; Wölk, Claus ; Deufel, Reinhard ; Berlec, Franz-Josef ; Dickmann, Jürgen ; Käb, Norbert ; Schumacher, Hermann (2000) Monolithic integration of metamorphic pin DIODES and HFETs for heterointegrated MMICs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Vindevoghel, J. ; Descamps, P. (2000) Narrowband active GaAs MMIC filters in K-band. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Gasquet, D. ; Nativel, L. ; Arcambal, C. ; Castagné, M. ; Dhondt, F. ; Mazari, B. ; Eudeline, P. (2000) Near-field measurement of microwave active devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Boulanger, C. ; Lapierre, Luc ; Gizard, Francis (2000) New cold FET I-Q linear vector modulator topology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Malmqvist, Robert ; Gustafsson, Andreas ; Danestig, Magnus ; Ouacha, Aziz ; Hagelin, Sven ; Rudner, Staffan (2000) Noise and Intermodulation Properties of Tunable Recursive Active MMIC Filters for Future Adaptive On-chip Radar Receivers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zirath, Herbert ; Sakalas, Paulius ; Miranda, Jose Miguel (2000) Noise performance of a ground gate wideband MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

De Dominicis, M. ; Giannini, F. ; Limiti, E. ; Saggio, G. (2000) Novel 4-points input pattern for large band noise measurements. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Muldavin, Jeremy B. ; Rebeiz, Gabriel M. (2000) Novel Series and Shunt MEMS Switc Geometries for X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Giannini, Franco ; Leuzzi, Giorgio ; Limiti, Ernesto ; Morgia, Fabio (2000) Optimum non-linear design of active microwave mixers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Dubuc, D. ; Parra, T. ; Graffeuil, J. (2000) Original topology of GaAs-PHEMT mixer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rodriguez-Tellez, J. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. (2000) Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mottet, B. ; Sydio, c. ; Hartnagel, H.L. (2000) Pulsed Electrical Stress Techniques for the Detection of Non-thermal Lifetime-Problems with Semiconductor Devices and their IC’s. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bazin, G. ; Gilles, J.P. ; Crozat, P. ; Megherbi, Souhil (2000) RF MEMS: Silicon micro-mechanical capacitive structures. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Colantonio, P. ; Giannini, F. ; Leuzzi, G. ; Limiti, E. (2000) RF versus Microwave High Efficiency PA Design. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hartnagel, H.L. ; Lin, C.I. ; Rodriguez, M. ; Ichizli, V. ; Saglam, M. ; Szeliga, P. (2000) Recent Development in Device Technology for Integrated THz-Circuits. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Landen, Lars ; Fager, Christian ; Zirath, Herbert (2000) Regenerative GaAs MMIC Frequency Dividers for 28 and 14 GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Dorofeev, A.A. ; Matveev, Yu.A. ; Chernavskii, A.A. (2000) Researches of two and three-output structures with effect of resonant tunneling. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Aja, B. ; de la Fuente, M.L. ; Garcia, J.A. ; Pascual, J.P. ; Artal, E. (2000) Resistive Monolithic Q-Band HEMT Mixer for MVDS Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

David, S. ; Batty, W. ; Panks, A.J. ; Johnson, R.G. ; Snowden, C.M. (2000) Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulations of microwave power FETs and MMICs, on timescales suitable for CAD. This is achieved by combining an original, analytical thermal resis-tance matrix model of time-dependent heat flow in a power FET or MMIC, with a fully physical electrical CAD model for transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Brookbanks, D. M. (2000) Self consistent modelling of PHEMT devices for millimeter wave small signal, noise and power applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cetronio, A. ; Giannini, F. ; Lanzieri, C. ; Leuzzi, G. (2000) Self-aligned gate technology for analogue and digital GaAs integrated circuits. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Beaudin, G. (2000) Semi and super-conducting technologies for the millimeter and submillimetre wave applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Erratico, Pietro (2000) Silicon technologies for RF applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Marchand, Philippe ; Gouessant, Philippe (2000) Single Chip 58 GHz Radio Relay Front End Philippe Marchand, Philippe Gouessant. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Wieszt, A. ; Dietrich, R. ; Lee, J.-S. ; Vescan, A. ; Leier, H. ; Piner, E.L. ; Redwing, J.M. ; Sledzik, H. (2000) Small signal and power performance of AlGaN/GaN HFETs grown on s.i.SiC. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

de Hek, A.P. ; Hunneman, P.A.H. (2000) Small sized high-gain PHEMT high-power amplifiers for X-BAND applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Costantini, A. ; Vannini, G. ; Filicori, F. ; Santarelli, A. (2000) Stability analysis of multi-transistor microwave power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rodwell, Mark ; Betser, Y. ; Jaganathan, S. ; Mathew, T. ; Sundararajan, PK ; Martin, S.C. ; Smith, R.P. ; Wei, Y. ; Urteaga, M. ; Scott, D. ; Long, S. (2000) Submicron lateral scaling of HBTs and other vertical-transport devices:towards THz bandwidths. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sleiman, A. ; Di Carlo, A. ; Tocca, L. ; Fiordiponti, R. ; Lugli, P. (2000) Tayloring the Breakdown Voltage in High Electron Mobility Transistor: Theoretical and Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Kauffmann, N. ; Blayac, S. ; André, P. ; Riet, M. ; Benchimol, J.L. ; Konczykowska, A. (2000) Technological and geometrical optimisation of InP HBT driver circuit. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Borgarino, M. ; Plana, R. ; Graffeuil, J. ; Cattani, L. ; Fantini, F. (2000) The Reliability of III-V semiconductor Heterojunction Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Jarosik, Norman (2000) The Use of Cryogenic HEMT Amplifiers in Wide Band Radiometers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bietti, I. ; Svelto, F. ; Castello, R. (2000) Towards fully integrated CMOS RF receivers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ladbrooke, P.H. ; Bridge, J.P. (2000) Tracking sic FET developments with a FET simulator. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Roussel, L. ; Duperrier, C. ; Campovecchio, M. ; Lajugie, M. (2000) Two Octave Phemt Power Amplifier for EW Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Radisic, Vesna ; Weinreb, Sander ; Micovic, Miro ; Hu, Ming ; Janke, Paul ; Ngo, Catherine ; Harvey, Duane ; Matloubian, Mehran ; Nguyen, Loi (2000) Ultra broadband low power MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Pospieszalski, Marian W. ; Wollack, Edward J. (2000) Ultra-low-noise,inp field effect transistor amplifiers for radio astronomy receivers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 October 2000, Paris.

Shinohara, K. ; Yamashita, Y. ; Hikosaka, K. ; Hirose, N. ; Kiyokawa, M. ; Matsui, T. ; Mimura, T. ; Hiyamizu, S. (2000) Ultra-short T-shaped gate fabrication technique for InP based HEMTs with high ft (> 300 GHz) and their MMIC applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Meng, C.C. ; Chen, J. W. ; Chang, C.H. ; Chen, L.P. ; Lee, H.Y. ; Kuan, J.F. (2000) Using Average RF Gate and Drain Currents to Determine Gain Compression Mechanisms for Narrow-recessed and Wide-recessed MESFETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Serru, V. ; Leclerc, E. ; Huin, F. ; Thuret, J. ; Denis, S. (2000) Very high power added efficiency PHEMT amplifiers for GSM and DCS 1800 applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Snowden, Christopher M. (2000) Very high volume GaAs MMICs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cai, Yongming ; Katehi, Linda P.B. (2000) Wide Band Series Switch Fabricated Using Metal As Sacrificial layer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Boulanger, C. ; Lapierre, L. ; Gizard, F. ; Zanchi, C. ; Lesthievent, G. (2000) X BAND MMIC direct 8 Phase Shift Keying modulator for high data rate earth observation applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.