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Number of documents:152.

Masuda, Satoshi and Kira, Hidehiko and Hirose, Tatsuya (2004) 110-GHz High-gain Flip-chip InP HEMT Amplifier with Resin Encapsulation on an Organic Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wohlgemuth, O. and Müller, W. and Link, T. and Lederer, R. and Paschke, P. (2005) 2-1 SiGe PRBS Generator IC up to 86 Gbit/s. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Choi, Sunkyu and Kim, Taeho and Lee, Bangkeun and Yang, Kyounghoon (2004) 5-GHz VCO with a wide tuning range using an InPbased RTD/HBT technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Moran, D.A.J. and Boyd, E. and Elgaid, K. and McLelland, H. and Stanley, C.R. and Thayne, I.G. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using a non-annealed ohmic contact process. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bessemoulin, A. and Parisot, M. and Quentin, P. and Saboureau, C. and Van Heijningen, M. and Priday, J. (2004) A 1-Watt Ku-band Power Amplifier MMIC using Cost-effective Organic SMD Package. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tempel, Mike and Huber, Meik and Boeck, Georg (2004) A 2 GHz Fully Balanced Switching HBT Mixer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chang, Hong-Yeh and Wang, Huei and Wang, Yu-Chi and Chao, P. C. and Chen, Chung-Hsu (2004) A 22-GHz Ultra Low Phase Noise Push-Push Dielectric Resonator Oscillator Using MMICs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wu, Tzung-Han and Meng, Chinchun and Wu, Tse-Hung and Huang, Guo-Wei (2004) A 5.7 GHz 0.35 m SiGe HBT Upconversion Micromixer with a Matched Single-ended Passive Current Combiner Output. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sen, P. and Park, H. -M. and Mukhopadhyay, R. and Srirattana, N. and Raghavan, A. and Laskar, J. and Cressler, J. D. and Freeman, G. (2004) A Broadband, Small-Signal SiGe HBT Model for Millimeter-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Nam, Joongjin and Kim, Youngwoong and Shin, Jin-Ho and Kim, Bumman (2004) A CDMA and AMPS Handset Power Amplifier based on Load Modulation Technique. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Darfeuille, Sébastien and Barelaud, Bruno and Billonnet, L. and Jarry, Bernard and Marie, Hervé and De La Torre, Alain and Nguyen Trieu, Luan Le and Gamand, Patrice (2004) A Differential-Based Single-Ended 2 GHz Low-Noise Recursive Filter on Silicon. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Dong Ho and Ko, Sangsoo and Jeon, Sang-Hoon and Park, Jae-Woo and Hong, Songcheol (2004) A Distributed Model of Four-Port Monolithic Transformer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Meng, Chinchun and Wu, Tzung-Han and Wu, Tse-Hung and Huang, Guo-Wei (2004) A Fully Integrated 5.2 GHz Double Quadrature Image Rejection Gilbert Downconverter Using 0.35 µm SiGe HBT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Meliani, Chafik and Rudolph, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang (2004) A GaAs-HBT Broadband Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmission. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chang, S.W. and Chang, E. Y. and Chen, K.S and Hsieh, T. L. and Tseng, C. W. (2004) A Gold Free Fully Copper Metallized InGaP/GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Gómez, C. and García, José A. and Mediavilla, A. and Tazón., A. (2004) A High Efficiency Rectenna Element using E-pHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chow, Yut-Hoong and Chong, Thomas (2004) A High Performance 2.4GHz Linear Power Amplifier in Enhancement-mode GaAs pHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Phan, Khanhtran and Morkner, Henrik (2004) A High Performance Yet Easy to Use Low Noise Amplifier in SMT Package for 6 to 20 GHz Low Cost Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Johansen, Tom K. and Vidkjær, Jens and Krozer, Viktor (2004) A Highly Integrated GaAs pHEMT Active Mixer for Wideband SAR Systems. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Kyung Ai and Lee, Dong Ho and Park, Hyun-Min and Cheon, Sang-Hoon and Park, Jae-Woo and Yoo, Hyung-mo and Hong, Songcheol (2004) A InGaP/GaAs HBT WLAN Power Amplifier with Power Detector. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sim, Sang-Hoon and Ko, Sangsoo and Hong, Songcheol (2004) A K-Band Push-Push VCO MMIC using embedded frequency doubling mechanism. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Giannini, F. and Limiti, E. and Serino, A. and Dainelli, V. (2004) A Medium-Power Low-Noise Amplifier For X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Colantonio, P. and Giannini, F. and Limiti, E. and Marrocco, G. (2004) A Method for PA-Patch Antenna Design Optimisation Oriented to Maximum Efficiency. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Raghavan, Anand and Jalan, Umesh and Chakraborty, Sudipto and Lee, Chang-Ho and Laskar, Joy and Chen, Emery and Lee, JongSoo and Cressler, J. D. and Freeman, Greg and Joseph, Alvin (2004) A Millimeter-Wave Linear Low Noise Amplifier in SiGe HBT Technology with Substrate Parasitic Model. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tsai, Ming-Da and Wang, Huei and Kuan, Jui-Feng and Chao, Chih-Ping (2004) A Miniature 4.3-7-GHz, 1-V CMOS LNA with Helical Inductors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lin, Chin-Shen and Tsai, Ming-Da and Wang, Huei and Wang, Yu-Chi and Chen, Chung-Hsu (2004) A Monolithic HBT Broadband Amplifier Using Modified Triple Darlington Configuration. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre, Amsterdam.

Fujii, Kohei and Morkner, Henrik and Brown, Edward (2004) A Novel Low Cost Enhancement Mode Power Amplifier MMIC in SMT Package for 7 to 18 GHz Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Dearn, Andrew and Richards, Tony and Devlin, L. and Yau, Wing and Wu, Owen (2005) A Universal GaAs HBT PA with Active Bias Circuitry, Covering 4.9-6 GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Kallfass, I. and Schick, C. and Schumacher, H. and Brazil, T. (2004) A Universal Large-Signal Model for Hetero Field Effect Transistors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Issaoun, A. and Kouki, A. B. and Ghannouchi, F. M. (2004) A User Compiled Large Signal Model for GaAs Heterojunction Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Isacsson, Magnus and Johansson, Stefan and Ståhl, Johan and Thiesies, Heiko and Lingsten, Johan and Tengs, Audun (2004) A Wide Band Receiver Module. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Zirath, Herbert and Kozhuharov, Rumen and Ferndahl, M. (2004) A balanced InGaP-GaAs Colpitt-VCO MMIC with ultra-low phase noise. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Rochette, Stéphane and Villemazet, Jean-François and Cazaux, Jean-Louis and Populus, Thierry (2005) A highly integrated GaAs MMIC UHF band demodulator with four tunable quadrature phase shift IF channels. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre 2004, Amsterdam.

Cappelluti, F. and Pirola, M. and Ghione, G. (2004) A measurement-based distributed large-signal E/O circuit model for high-speed electroabsorption modulators. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Darcel, L. and Duême, P. and Funck, R. and Alquié, G. (2004) A new Methodology for achieving MMIC Bandpass Active Filters at High Frequencies. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chartier, E. and Piotrowicz, S. and Jacquet, J.C. and Floriot, D. (2004) Accurate Characterization of S-Band HBT Power Amplifier using simultaneously S parameters and Load-Pull Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

PRIGENT, M. and NALLATAMBY, J.C. and QUERE, R. (2004) Advanced Phase noise modeling techniques of nonlinear microwave devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre 2004, Amsterdam.

Klumperink, Eric A.M. and Bruccoleri, Federico and Stroet, Peter and Nauta, Bram (2004) Amplifiers Exploiting Thermal Noise Canceling: A Review. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Smith, P. and Thayne, I.G. (2004) An Array-Based Design Methodology for 10 GHz SiGe LC Oscillators. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Elgaid, K. and McLelland, H. and Ferguson, S. and Cao, Xin and Boyd, E. and Moran, D. and Thoms, S. and Zhou, H. and Wilkinson, C.D.W. and Stanley, C.R. and Thayne, I. G. (2004) An Array-Based Design Methodology for the Realisation of 94GHz MMMIC Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lefebvre, B. and Bessemoulin, A. and Schwoerer, C. and Lehoue, V. and Vaudescal, O. (2004) An Highly Integrated Double Conversion Mixer MMIC for Ka-band VSAT Communication Systems. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Millet, O. and Bertrand, P. and Legrand, B. and Collard, D. and Buchaillot, L. (2004) An Original Methodology to Assess Fatigue Behavior in RF MEMS Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sayed, Ahmed and von der Mark, Stefan and Boeck, Georg (2004) An Ultra Wideband 5 W Power Amplifier Using SiC MESFETs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Horio, K. and Yonemoto, K. (2004) Analysis of Drain Lag and Power Compression in GaN MESFET. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Massaro, A. and Pierantoni, L. and Ciandrini, C. and Rozzi, T. (2005) Analysis of Sensitivity for Low-Pass Multilayer Optical Filters. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Dharmasiri, C. N. and Vo, V. T. and Koon, K. A. and Rezazadeh, A. A. (2004) Analysis of Temperature Dependence of GaAs DHBT Terminal Resistances Using the Observed Kink Effect. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Parvais, B. and Raskin, J.P. (2004) Analytical Expressions for Distortion of SOI MOSFETs using the Volterra Series 3D. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Jacquet, J-C and Aubry, R. and Gérard, H. and Delos, E. and Rolland, N. and Cordier, Y. and Bussutil, A. and Rousseau, M. and Delage, S. L. (2004) Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Heyen, Johann and Jacob, Arne F. (2004) Anisotropic Conductive Adhesives for Millimeterwave Flipchip Interconnections. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Winkler, Wolfgang and Heinemann, Bernd and Knoll, Dieter (2004) Application of SiGe:C BiCMOS to Wireless and Radar. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Khuchua, N. and Chakhnakia, Z. and Kobrava, N. and Melkadze, R. and Lezhneva, T. and Sakharova, T. and Tigishvili, M. and Tutunjan, A. and Tutunjan, N. and Diehl, R. and Tsenes, P. and Hatzopoulos, Z. (2004) Availability of Enabling Technologies for GaAs-Based Specific Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Galloo, J.S. and Roelens, Y. and Bollaert, S. and Pichonat, E. and Wallart, X. and Cappy, A. and Mateos, J. (2004) Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hadley, Peter (2004) Bottom-up Nanoelectronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Florian, C. and Pirazzini, M. and Vannini, G. and Santarelli, A. and Borgarino, M. and Angelone, C. and Paparo, M. and Filicori, F. (2004) C Band DROs Using Microwave Bipolar Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Soubercaze-Pun, G. and Tartarin, J.G. and Bary, L. and Delage, S. L. and Plana, R. and Graffeuil, J. (2004) Carrier’s transport mechanisms investigations in AlGaN/GaN HEMT thanks to physical modelling and low frequency noise measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hakala, Ilkka and Gharavi, Leila and Kaunisto, Risto (2004) Chireix Power Combining with Saturated Class-B Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mijalkovic, S. and Burghartz, J.N. (2004) Compact Modelling of SiGe HBTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Denis, David and Hunter, Ian and Snowden, Christopher M. (2004) Comprehensive Characterization and Modelling of Micro-wave Power HEMTs for Large-Signal Power Amplifier Design. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Johansen, Tom K. and Vidkjær, Jens and Krozer, Viktor (2004) Consistent Large-Signal Modeling of SiGe HBT Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tabata, H. and Matsui, H. and Saeki, H. and Masuda, S. (2004) Construction of ZnO devices : electric and magnetic properties. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bessemoulin, A. and Grunenputt, J. and Fellon, P. and Tessmann, A. and Kohn, E. (2005) Coplanar W-Band Low Noise Amplifier NMIC Using 100-nm Gate-length GaAs PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre 2004, Amsterdam, Amsterdam.

Rennane, A. and Bary, L. and Graffeuil, J. and Plana, R. (2004) DC and Low Frequency Noise Characteristics of SiGe n-MODFET’s. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bessemoulin, A. (2005) Design Data for Hot-via Interconnects in Chip Scale Packaged MMICs up to 110 GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Lamesa, Alessandro and Giolo1, Giancarlo and Limiti, Ernesto (2004) Design Procedure and Performance of two 0.5-20 GHz GaAs PHEMT MMIC Matrix Distributed Amplifier for EW Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kohn, E. and Kubovic, M. and Hernandez-Guillen, F. and Denisenko, A. (2004) Diamond for High Power / High Temperature Electronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lisec, T. and Huth, C. and Wagner, B. (2004) Dielectric Material Impact on Capacitive RF MEMS Reliability. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Nuttinck, S. and Mukhopadhyay, R. and Loper, C. and Singhal, S. and Harris, M. and Laskar, J. (2005) Direct On-Wafer Non-Invasive Thermal Monitoring of AlGaN/GaN Power HFETs Under Microwave Large Signal Conditions. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Krämer, M.C.J.C.M. and Hoskens, R.C.P. and Jacobs, B. and Kwaspen, J.J.M. and Suijker, E.M. and de Hek, A.P. and Karouta, F. and Kaufmann, L.M.F. (2004) Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Giannini, F. and Colantonio, P. and Orengo, G. and Serino, A. (2004) Distortion Characterization and Neural Network Modeling for Microwave Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Milivojevic, B. and Hoffmann, S. and Thiede, A. and Noé, R. and Leblanc, R. and Wroblewsk, B. (2004) Distributed Amplifiers for Transmitter and Receiver of a 40 Gbit/s DPSK Optical Transmission System. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Rottenberg, X. and Nauwelaers, B. and De Raedt, W. and Tilmans, H. A. C. (2004) Distributed dielectric charging and its impact on RF MEMS devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Pennington, D. C. and Hopper, R and Reeves, R. M. (2004) Evolution of Transceiver Design from Radar to Imaging. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Touhami, R. and Yagoub, M.C.E. and Baudrand, H. (2004) Extraction Of The Series-Resistance Of Au-Oxide-n- InP Structures. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Boyd, E. and Cao, Xin and Thoms, S. and Moran, D.A.J. and Eglaid, K. and Holland, M. and Stanley, C.R. and Thayne, I. G. (2004) Fabrication of Very High Performance 50nm T-gate metamorphic GaAs HEMTs with exceptional uniformity. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Seidel, Robert V. and Graham, Andrew P. and Duesberg, Georg S. and Liebau, Maik and Unger, Eugen and Kreupl, Franz and Hoenlein, Wolfgang (2004) Faster and Smaller with Carbon Nanotubes? In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kärnfelt, C. and Zirath, H. and Starski, J. P. and Rudnicki, J. (2004) Flip Chip Assembly of a 40-60 GHz GaAs Microstrip Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Würfl, Joachim and Schlechtweg, Michael (2004) Frontiers of III-V Compounds and Devices 0,1. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sassi, Zoheir and Barelaud, Bruno and Billonnet, L. and Jarry, Bernard and Marie, Hervé and De La Torre, Alain and Nguyen Trieu, Luan Le and Gamand, Patrice (2004) Fully Differential 2 GHz 2.7V 4th-Order Low-Noise Active Bandpass Filter on Silicon. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Zayachuk, Dmytro and Strukhlyak, Natalia and Krukovsky, Semen and Goovaerts, Etienne and Polyhach, Yevhen (2004) GaAs thin films grown by LPE under influence of Yb impurity. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Pavlidis, Dimitris (2004) GaN THz Electronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Saunier, Paul (2004) GaN Technology Overview: Accomplishments and Challenges. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hollreiser, Martin (2004) Galileo Receivers - Challenges and Performance. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kim, Hong-Teuk and Lee, Ki-Hong and Choi, Hyung-Kyu and Choi, Ji-Youn and Lee, Kyung-Hak and Kim, Jin-Pil and Ryu, Gi-Hyon and Jeon, Yong-Joon and Han, Choong-Soo and Kim, Keechul and Lee, Kyungho (2004) High Efficiency and Linear Dual Chain Power Amplifier without/with Automatic Bias Current Control for CDMA Handset Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Llopis, O. (2004) High Frequency and Low Frequency Noise in Microwave Oscillators. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Colantonio, P. and Angel Garcia, Josè and Giannini, Franco and Limiti, Ernesto and Malaver, Emigdio and Carlos Pedro, Josè (2004) High Linearity and Efficiency Microwave PAs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kim, Dae-Hyun and Noh, Hun-Hee and Yeon, Seong-Jin and Lee, Jae-Hak and Seo, Kwang-Seok (2004) High fT 30nm In0.7GaAs HEMT’s Beyond Lithography Limitations. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Leung, Lydia L. W. and Zhang, Jinwen and Hon, Wai Cheong and Chen, Kevin J. (2004) High-Performance CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides on Low- Resistivity Silicon Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cojocari, O. and Biber, S. and Mottet, B. and Sydlo, C. and Hartnagel, H.-L. and Schmidt, L.-P. (2004) IF-noise improvement of the GaAs Schottky diodes for THz-frequency mixer applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Camprini, M. and Cidronali, A. and Accillaro, C. and Magrini, I. and Loglio, G. and Collodi, G. and Jargon, J. and Manes, G. (2004) Identification of a Strongly Nonlinear Device Compact Model Based on Vectorial Large Signal Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Ziroff, A. and Nalezinski, M. and Menzel, W. (2004) Improved Performance of Flip Chip assembled MMIC Amplifiers on LTCC using a Photonic Bandgap Structure. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kimura, Koichi and Seki, Masato and Matsumura, Nobuhisa and Honjo, Kazuhiko (2004) Improvement in ACLR Asymmetry forW-CDMA InGaP/GaAs HBT Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre.

Malyshev, Sergei and Chizh, A. and Andrievski, Vatslav (2004) InGaAs p-i-n Photodiodes for Microwave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Maneux, C. and Belhaj, M. and Labat, N. and Touboul, A. and Riet, M. and Kahn, M. and Godin, J. and Bove, Ph. (2004) InP/GaAsSb/InP DHBT: Analysis of specific material parameters and high current effect by physical simulation. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cremonini, A. and Carbonaro, L. and Mariotti, S. and Natale, V. and Nesti, R. and Orfei, S. and Roda, J. and Tofani, G. (2004) Indium Phosphide MMIC Low Noise Amplifier and related cryogenically applications in a Radioastronomical Focal Plane Array Receiver. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Ducatteau, D. and Werquin, M. and Gaquière, C. and Théron, D. and Martin, T. and Delos, E. and Grimbert, B. and Morvan, E. and Caillas, N. and Hoël, V. and De Jaeger, J.C. and Delage, S. L. (2004) Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mellberg, Anders and Malmkvist, Mikael and Grahn, Jan and Rorsman, Niklas and Zirath, Herbert (2004) Integration of components in a 50 nm InGaAs- InAlAs-InP HEMT process with pseudomorphic In0.65Ga0.35As channel. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Rudolph, M. and Schnieder, F. and Heinrich, W. (2004) Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Winkler, Wolfgang and Borngräber, Johannes (2004) LC-Oscillator for 94 GHz Automotive Radar System Fabricated in SiGe:C BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Teyssier, Jean-Pierre and Barataud, D. and Charbonniaud, C. and De Groote, Fabien and Mayer, Markus and Nébus, Jean-Michel and Quéré, Raymond (2004) Large Signal Characterization of Microwave Power Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tkachenko, Y. and Boerman, S. and Chung, H-C. and DiCarlo, P. and Gerard, M. and Gering, J. and Hu, J. and Klimashov, A. and Kwok, K. and Reginella, P. and Sprinkle, S. and Wei, C. and Yang, Y. (2004) Large-Signal Nonlinear Model of a Highly Integrated Quad-Band GSM Transmit Front-End Module. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

O’Droma, M. S. and Portilla, J. and Bertran, E. and Donati, S. and Brazil, T. and Rupp, M. and Quay, R. (2004) Linearisation Issues in Microwave Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mahmoudi, R. and Milosevic, D. and van der Tang, J.D. and Hegt, J. A. and van Roermund, A. H. M. (2004) Linearized Switching Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kärkkäinen, Mikko and Varonen, Mikko and Kantanen, Mikko and Karttaavi, Timo and Kangaslahti, Pekka and Halonen, Kari (2004) Low Noise Amplifiers for 94 GHz Cloud Radar. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Risacher, Christophe and Sundin, Erik and Robles, Victor Perez and Pantaleev, Miroslav and Belitsky, Victor (2004) Low Noise and Low Power Consumption Cryogenic Amplifiers for Onsala and Apex Telescopes. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

SION, A. and CORTESE, P. and GOURDON, C. and CAMIADE, M. and NALLATAMBY, J.C. and PRIGENT, M. and OBREGON, J. (2004) Low Phase Noise 2 GHz HBT Push-Push VCO Based on an Advanced Low Frequency Noise Model. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Romanò, Luca and Minerva, Vito and Cavalieri d’Oro, Silvia and Politi, Marco and Samori, Carlo and Pagani, Maurizio (2004) Low Phase Noise, Very Wide Band SiGe Fully Integrated VCO. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Krotkus, A. and Bertulis, K. and Adomavicius, R. (2004) Low temperature MBE grown GaAs for terahertz radiation applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Shirokov, Mikhail S. and Gray, Eric S. and Little, Duncan A. and Hau, Gary and James, A. and Roche, Jr. (2004) Low-Cost Wide-Range Low-Current Consumption Linear HBT MMIC Power Amplifier for Portable 2.4GHz WLAN Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Witvers, R.H. and Bij de Vaate, J.G. and Sarmasanu, A. (2004) MMIC GaAs and InP Very Low Noise Amplifier Designs for the Next Generation Radio Telescopes. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre, Amsterdam.

Meazza, Andrea and Pagani, Maurizio and Iommi, Roberto and Macchiarella, Giuseppe (2004) MMIC implementation of a new active pre-distortion scheme for Highly Linear Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Gough, R. and Archer, J. and Roberts, P. and Moorey, G. and Graves, G. and Bowen, M. and Kanoniuk, H. (2004) MMICs for the Australia Telescope Millimetre-Wave Receiver System. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Ponchak, George E. and Schwartz, Zachary D. and Alterovitz, Samuel A. and Downey, Alan N. (2005) Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Clifton, J. C. and Albasha, L. and Lawrenson, A. and Eaton, A. (2004) Meeting the Needs of Cellular Dual-Mode (EGPRS/3G) Power Amplifiers with a Unique J-PHEMT Process and Novel Control Architecture. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Dubuc, D. and Van Spengen, Merlijn and Melle, Samuel and De Wolf, Ingrid and Mertens, Robert and Pons, Patrick and Grenier, Katia and Plana, Robert (2004) Methodology to assess the reliability behavior of RF-MEMS. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mertens, R.P. and De Raedt, W. and Carchon, G. and Tilmans, H.A.C. and Germain, M. (2004) Microwave applications of advanced semiconductor technologies. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Galière, J. and Valard, J.L. and Estèbe, E. (2004) Millimetre-wave MMIC packaging compatible with surface-mount technology (SMT). In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kaper, Val and Thompson, Richard and Prunty, Tom and Shealy, James R. (2004) Monolithic AlGaN/GaN HEMT SPDT switch. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cazaux, Jean-Louis and Cayrou, Jean-Christophe and Miquel, Christine and Debarge, Cécile and George, Sébastien and Barbaste, Régis and Bodereau, F. and Chabbert, Philippe and Maynard, Jean (2004) New Generation of Ka-Band Equipment for Telecommunication Satellites. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Siligaris, Alexandre and Dambrine, G. and Danneville, F. (2004) Non-Linear Modeling of the Kink Effect in Deep Sub-micron SOI MOSFET. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Taher, H. and Schreurs, D. and Vestiel, E. and Gillon, R. and Nauwelaers, B. (2004) Nonlinear Modeling of Si/SiGe HBT Using ANN. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Alabadelah, Ahmed and Fernandez, T. and Mediavilla, Angel and Nauwelaers, Bart and Santarelli, Alberto and Schreurs, Dominique and Tazón, Antonio and Traverso, Pier Andrea (2004) Nonlinear Models of Microwave Power Devices and Circuits. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chang, Christophe and Sommet, Raphael and Quéré, Raymond and Dueme, Ph. (2004) Nonlinear thermal reduced model for Microwave Circuit Analysis. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Van Heijningen, M. and Priday, J. (2004) Novel Organic SMD Package for High-Power Millimeter Wave MMICs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lonac, J. A. and Santarelli, A. and Paganelli, R. and Filicori, F. (2004) Numerically Efficient Design of Highly Linear Microwave Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Loglio, G. and Cidronali, A. and Accillaro, C. and Usai, M. and Magrini, I. and Camprini, M. and Collodi, G. and Manes, G. (2004) On the experimental calculation of the conversion matrix for sub-harmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

van Vliet, F.E. and de Boer, A. (2004) On the stability of MMIC’s using transistors with inductive source feedback. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Coromina, F. and Deborgies, F. and Emma, F. and Gatti, G. (2004) On-board Applications of Active Microwave Technologies to GALILEO and other European Space Programs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Matiss, A. and Janssen, G. and Bertenburg, R. M. and Brockerhoff, W. and Tegude, F.J. (2004) Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Nosal, Zbigniew M. (2004) Performance Analysis of Transimpedance Amplifiers in Various Technologies. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Werquin, M. and Vellas, N. and Guhel, Y. and Ducatteau, D. and Boudart, B. and Pesant, J.C. and Bougrioua, Z. and Germain, M. and De Jaeger, J.C. and Gaquière, C. (2004) Performances of AlGaN/GaN HEMTs in Planar Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Elkhou, M. and Rousseau, M. and Gerard, H. and De Jaeger, J.C. (2004) Physical analysis of the breakdown phenomenon between sigle or double step gate recess HEMTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Conte, G. and Donati Guerrieri, S. and Bonani, F. and Ghione, G. (2004) Physics-Based Low-Frequency Noise Modelling in Small- and Large-Signal RF Device Operation. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Charbonniaud, C. and Gasseling, T. and De Meyer, S. and Quéré, R. and Teyssier, J.P. and Barataud, D. and Nébus, J.M and Martin, T. and Grimbert, B. and Hoel, V. and Caillas, N. and Morvan, E. (2004) Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Papaioannou, G. J. and Theonas, V. and Exarchos, M. and Konstantinidis, G. (2004) RF MEMS Sensitivity to Radiations. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Minko, A. and Hoel, V. and Dambrine, G. and Gaquiere, C. and Dejaeger, J-C and Cordier, Y. and Semond, F. and Natali, F. and Massies, J. and Lahreche, H. and Wedzikowski, L. and Langer, R. and Bove, P. (2004) RF Noise and Power Performances of AlGaN/GaN on Si(111) Substrates making of low cost modules. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Théron, D. and Gaquière, C. and De Jaeger, J.C. and Delage, S. L. (2004) Recent Developments and Trends in GaN HFETs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Krausse, D. and Quay, R. and Tessmann, A. and Massler, H. and Leuther, A. and Merkle, T. and M uller, S. and Schw orer, C. and Mikulla, M. and Schlechtweg, M. and Weimann, G. (2004) Robust GaN HEMT Low-Noise Amplifier MMICs for X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Borges, A. and SMOS-PLM, Team (2004) SMOS Mission & MIRAS Instrument. Synthetic Apperture Radiometer in Space. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Borgarino, M. and Bogoni, A. and Fantini, F. and Peroni, M. and Cetronio, A. (2004) Semi-Automated Experimental Set-Up for CAD-oriented Low Frequency Noise Modeling of Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Palmour, J.W. and Milligan, J.W. and Henning, J. and Allen, S.T. and Ward, A. and Parikh, P. and Smith, R.P. and Saxler, A. and Moore, M. and Wu, Y. (2004) SiC and GaN Based Transistor and Circuit Advances. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Vaucher, Cicero S. and Apostolidou, M. and Farrugia, Andrew and Praamsma, Louis (2004) SiGe Building Blocks for Microwave Frequency Synthesizers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Larson, Lawrence E. (2004) SiGe HBT BiCMOS Technology as an Enabler for Next Generation Communications Systems. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Magnee, P. H. C. and Hurkx, G. A. M. and Agarwal, P. and van Noort, W. D. and Donkers, J. J. T. M. and Melai, J. and Aksen, E. and Vanhoucke, T. and Vijayaraghavan, M. N. (2004) SiGe:C HBT technology for advanced BiCMOS processes. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bonani, F. and Donati Guerrieri, S. and Ghione, G. (2004) Simulation of Large-Signal Cyclostationary Noise in Microwave Devices: from Physics-Based to Compact Modelling Approaches. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Anwar, Asif and Entwistle, Stephen and Taylor, Chris (2004) Strategy Analytics Insight Current Status & Future Prospects for GaAs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Moon-Que and Moon, Seong-Mo and Ryu, Keun-Kwan and Jang, Dong-Phil and Yom, In-Bok (2004) Subharmonically Pumped Image Rejection Mixer for K-band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wichmann, N. and Duszynski, I. and Parenty, T. and Bollaert, S. and Mateos, J. and Wallart, X. and Cappy, A. (2004) Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wei, C. J. and Gering, J. and Tkachenko, Y. (2004) Table-Based Dynamic PHEMT Model Using Delayed Capacitive Currents. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre 2004, Amsterdam.

Bolognesi, C.R. and Liu, H.G. and Watkins, S.P. (2004) The Fabrication and Characterization of High- Performance InP DHBTs (Invited). In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wu, L. and Tao, R. and Basaran, U. and Luger, J. and Dettmann, I. and Berroth, M. (2004) The Integrated 2W High Voltage/High Power 0.12-µm RF CMOS Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Accillaro, C. and Cidronali, A. and Zani, F. and Loglio, G. and Usai, M. and Collodi, G. and Camprini, M. and Magrini, I. and Manes, G. (2004) Thermal Memory Effects on the Linearity of a GaAs PHEMT. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bird, Neil. C. and Sanduleanu, Mihai A.T. (2004) Towards Integrated Transceivers in mm-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

This list has been generated onTue Apr 20 20:39:25 2021 CEST.
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