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Maas, A.P.M. ; Hoogland, J.A. (2005) 60 GHz GaAs MMIC mixers with integrated LO buffer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Maekawa, Arata ; Nagahara, Masaki ; Yamamoto, Takashi ; Sano, Seigo (2005) A 100 W high-efficiency GaN HEMT amplifier forS-band wireless system. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Bao, Mingquan ; Li, Yinggang (2005) A 17 to 26 GHz micromixer in SiGe BiCMOS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Chen, Wei-Chien ; Chen, Shih-Yu ; Tsai, Jeng-Han ; Huang, Tian-Wei ; Wang, Huei (2005) A 38-48-GHz miniature MMIC subharmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Anowar Masud Kelly, M. ; Zirath, Herbert ; Kelly, Matthew (2005) A 45 dB variable gain low noise MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Han, Qing ; Shimura, Atsushi ; Inagaki, Keizo ; Ohira, Takashi ; Akaike, Masami (2005) A GaAs monolithic anti-series varactor pair for voltage-controlled capacitance with reduced RF nonlinearity. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Weng, Ching-Chih ; Tsai, Zuo-Min. ; Wang, Huei (2005) A K-Band miniature, broadband, high output power HBT MMIC balanced doubler with integrated balun. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Florian, C. ; Scappaviva, F. ; Feudale, M. ; Monaco, V.A. ; Filicori, F. (2005) A V band singly balanced diode mixer for space application. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Malmkvist, Mikael ; Mellberg, Anders ; Grahn, Jan (2005) A W-band MMIC amplifier using 70-nm gate length InP HEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Krishnamurthy, L. ; Sun, Q. ; Vo, V. T. ; Parkinson, G. ; Paul, D. K. ; Williams, K. ; Rezazadeh, A. A. (2005) A comparative study of active and passive GaAs microwave couplers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Camarchia, V. ; Donati Guerrieri, S. ; Pirola, M. ; Teppati, V. ; Ghione, G. ; Peroni, M. ; Lanzieri, C. (2005) A comprehensive class A to B power and load-pull characterization of GaN HEMT son SiC and sapphire substrates. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

de Hek, A.P. ; van der Bent, G. ; van Wanum, M. ; van Vliet, F.E. (2005) A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jeong, Hee-Young ; Park, Sang-Keun ; Ryu, Nam-Sik ; Jeong, Yong-Chae ; Yom, In-Bok ; Kim, Young (2005) A design of K-band predistortion linearizer using reflective schottky diode for satellite TWTAs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Manan, Vikas ; Long, Stephen I. (2005) A dual band (10/16 GHz) p-HEMT VCO. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wanner, Robert ; Schäfer, Herbert ; Lachner, Rudolf ; Olbrich, Gerhard R. ; Russer, Peter (2005) A fully integrated SiGe low phase noise push-push VCO for 82 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kärnfelt, Camilla ; Kozhuharov, Rumen ; Zirath, Herbert (2005) A high purity 60 GHz-band single chip X8 multiplier with low phase noise. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Milosevic, Dusan ; van der Tang, Johan ; van Roermund, Arthur (2005) A high-efficiency HBT-based class-E power amplifier for 2 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Bhatnagar, Monica ; Morkner, Henrik (2005) A low cost SMT integrated frequency doubler and power amplifier for 30GHz DBS uplink applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Suh, Young-Ho ; Richardson, David ; Dadello, Anna ; Mahon, Simon ; Harvey, James T. (2005) A low-cost high performance GaAs MMIC package using air-cavity ceramic quad flat non-leaded package up to 40 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Maas, A.P.M. ; van Vliet, F.E. (2005) A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chong, Thomas (2005) A low–noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Peña, R. ; Gómez, C. ; García, J. A. (2005) A measurement system for FET derivative extraction under dynamic operating regime. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wolf, G. ; Demichel, S. ; Leblanc, R. ; Blache, F. ; Lefèvre, R. ; Dambrine, G. ; Happy, H. (2005) A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

van Raay, F. ; Quay, R. ; Kiefer, R. ; Fehrenbach, W. ; Bronner, W. ; Kuri, M. ; Benkhelifa, F. ; Massler, H. ; Müller, S. ; Mikulla, M. ; Schlechtweg, M. ; Weimann, G. (2005) A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wu, Pei-Si ; Lin, Chin-Shen ; Huang, Tian-Wei ; Wang, Huei ; Wang, Yu-Chi ; Wu, Chan-Shin (2005) A millimeter-wave ultra-compact broadband diode mixer using modified marchand balun. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yeh, Mei-Chao ; Tsai, Zuo-Min ; Wang, Huei (2005) A miniature DC-to-50 GHz CMOS SPDT distributed switch. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

ROUX, P. ; BAEYENS, Y. ; WOHLGEMUTH, O. ; CHEN, Y.K. (2005) A monolithic integrated 180 GHz SiGe HBT Push-Push Oscillator. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Burke, Darren R. ; Brazil, Thomas J. (2005) A new non-quasi-static non-linear MOSFET model based on physical analysis. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Horng, T.S. ; Huang, C.H. ; Han, F.Y. ; Li, C.J. (2005) A novel closed-form approach for comparing the Q-factor responses between the asymmetric and symmetric on-chip inductors. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

KASHIWA, T. ; OHNISHI, Y. ; YAMAMOTO, K. ; OHSHIMA, H. (2005) A novel linearizing technique using dual diode based linearizers for lightweight power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Heyen, Johann ; Jacob, Arne F. (2005) A novel package approach for multichip modules based on anisotropic conductive adhesives. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Mehdi, M. ; Rumelhard, C. ; Polleux, J.L. ; Lefebvre, B. (2005) A novel technique for obtaining LO and RF (LSB) Rejection in 25-40 GHz microwave up conversion mixers based on the concepts of distributed and double balanced mixing. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Doud, Scarlet M. ; Shastry, Prasad N. (2005) A novel wideband MMIC voltage controlled attenuator with a bandpass filter topology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Huber, Meik ; von der Mark, Stefan ; Boeck, Georg (2005) A power efficient active K band mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Zamanillo, J.M. ; Ingelmo, H. ; Perez-Vega, C. ; Mediavilla, A. (2005) A realistic large-signal microwave PHEMT transistors model for SPICE. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Santarelli, A. ; Di Giacomo, V. ; Raffo, A. ; Traverso, P. A. ; Vannini, G. ; Filicori, F. ; Monaco, V. A. (2005) A simple non-quasi-static non-linear modelof electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lonac, J.A. ; Santarelli, A. ; Melczarsky, I. ; Filicori, F. (2005) A simple technique for measuring the thermal impedance and the thermal resistance of HBTs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Magrini, I. ; Camprini, M. ; Cidronali, A. ; Collodi, G. ; Manes, G. (2005) A ultra low-power highly-linear HITD based down-converter for K-band applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Seo, Sanghyun ; Pavlidis, Dimitris ; Moon, Jeong-Sun (2005) A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bae, Hyun-Cheol ; Kim, Sang-Hoon ; Song, Young-Joo ; Lee, Sang-Heung ; Lee, Ja-Yol ; Kang, Jin-Young (2005) A wideband fully integrated SiGe BiCMOS medium power amplifier. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bakalski, W. ; Vasylyev, Andriy ; Simburger, Werner ; Kall, Marcus ; Schmid, Alfons ; Kitlinski, Krzysztof (2005) A4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with On-chip output matching. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Movahhedi, Masoud ; Abdipour, A. (2005) Accelerating theTransient Simulation of Semiconductor Devices Using Filter-Bank Transforms. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Marinkovic, Zlatica ; Markovic, Vera (2005) Accurate temperature dependent noise models of microwave transistors based on neural networks. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Clausen, M.C. ; McMonagle, J. (2005) Advanced manufacturing techniques for next generation power FET technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Holm, M.A. ; Brookbanks, D. M. (2005) Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Comparini, M.C. ; Di Marcantonio, U. ; Feudale, M. ; Piloni, V. ; Suriani, A. (2005) Advanced multi chip module solutions for RF and digital space applications: status and perspective. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pavlidis, Dimitris ; Valizadeh, Pouya ; Hsu, S. H. (2005) AlGaN/GaN high electron mobility transistor (HEMT) reliability. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Centurelli, F. ; Luzzi, Raimondo ; Marietti, Piero ; Scotti, Giuseppe ; Tommasino, Pasquale ; Trifiletti, Alessandro (2005) An active balun for high-CMRR IC design. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kim, Sung Yong ; Jang, Mi Ae ; Jeon, Ki Kyung ; Kim, Young ; Jeong, Yong Chae (2005) An analog linearizer using second harmonic signals feedforwarding. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Sayed, Ahmed ; Boeck, Georg (2005) An empirical large signal model for silicon carbide MESFETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yun, Wansuk ; Govind, Vinu ; Dalmia, Sidharth ; Sundaram, Venky ; Swaminathan, Madhavan ; White, George E. (2005) An integrated double balanced mixer on multilayer liquid crystalline polymer (M-LCP) based substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Barnes, A. R. ; Boetti, A. ; Marchand, L. ; Hopkins, J. (2005) An overview of microwave component requirements for future space applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Sen, Padmanava ; Srirattana, Nuttapong ; Raghavan, Arvind ; Laskar, Joy (2005) Analysis of Device Scaling towards the performance enhancement of Si-MOSFET RF amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Takayanagi, H. ; Nakano, H. ; Horio, K. (2005) Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ing Ng, Geok ; Radhakrishnan, K. ; Wang, Hong (2005) Are We There Yet ? – A Metamorphic HEMT and HBT Perspective. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

LAPORTE, C. ; LAPIERRE, L. ; MALLET, A. ; ANAKABE, A. (2005) Behaviour of a TWTA with a single or multicarrier input signal for telecommunication applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ferndahl, M. ; Motlagh, B.M. ; Masud, A. ; Angelov, I. ; Vickes, H. -O. ; Zirath, H. (2005) CMOS devices and circuits for microwave and millimetre wave applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Long, John R. (2005) Can silicon catch the millimeter wave? In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Burke, P.J. ; Yu, Z. ; Rutherglen, C. (2005) Carbon nanotubes for RF and microwaves. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pacheco, Sergio P. ; Zurcher, Peter ; Young, Steven R. ; Weston, Don ; Dauksher, William J. ; Auciello, Orlando ; Carlisle, John A. ; Kane, Neil ; Birrell, James P. (2005) Characterization of low-temperature ultrananocrystalline TM diamond RF MEMS resonators. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kim, Yong-Dae ; Sunwoo, Kook-Hyun ; Choa, Sung-Hoon ; Kim, Duck-Hwan ; Song, In-Sang ; Yook, Jong-Gwan (2005) Characterization of various shaped 5 GHz TFBARs based on 3D full-wave modeling. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chao, Shih-Fong ; Tsai, Zuo-Min ; Lin, Kun-You ; Wang, Huei (2005) Compact W-band SPQT MMIC switch using traveling wave concept. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bessemoulin, A. ; Mahon, S. ; Dadello, Anna ; McCulloch, G. ; Harvey, J. (2005) Compact and broadband microstrip power amplifier MMIC with 400-mW output power using0.15-µm GaAs PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raffo, A. ; Lonac, J.A. ; Menghi, S. ; Cignani, R. (2005) Comparison between equivalent-circuit and black-box non-linear models for microwave electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lees, Jonathan ; Benedikt, Johannes ; Bunz, B. ; Gaquiere, Christophe ; Ducatteau, D. ; Marquez-Segura, E. ; Martin-Guerrero, T.M. ; Barel, Alain (2005) Comparison of load-pull measurement results of a 4W pHEMT involving five european laboratories. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chee, Joolien ; Karru, Ratnakar ; Fisher, Timothy S. ; Peroulis, Dimitrios (2005) DC – 65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tan, Hiang Teik ; Hunter, Ian C. ; Snowden, Christopher M. ; Ranson, Richard (2005) Design and fabrication of short gate-length heterostructure charge coupled devices for transversal filter applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Convert, Emmanuelle ; Beasly, Paul ; Mahon, Simon ; Dadello, Anna ; Harvey, James (2005) Design of broadband, highly integrated, 20-30 GHz and 35-45 GHz MMIC Up-converters. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pérez-Pérez, L. A. ; Reynoso-Hernández, J. A. ; Loo-Yau, J. R. ; Soberanes-Flores, G. ; Ascencio-Ramírez, H. ; Rangel-Rojo, R. (2005) Detection and mixing of two modulated optical signals using only a single GaAs FET (experimental study). In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

O’Droma, M. ; Bertran, E. ; Gadringer, M. ; Donati, S. ; Zhu, A. ; Gilabert, P. L. ; Portilla, J. (2005) Developments in Predistortion and Feedforward Adaptive Power Amplifier Linearisers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wohlgemuth, O. ; Müller, W. ; Paschke, P. ; Link, T. ; Lederer, R. ; Kolb, B. ; Dotzauer, H. (2005) Digital SiGe-chips for data transmission up to 85 Gbit/s. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Dambrine, G. ; Gloria, D. ; Scheer, P. ; Raynaud, C. ; Danneville, F. ; Lepilliet, S. ; Siligaris, A. ; Pailloncy, G. ; Martineau, B. ; Bouhana, E. ; Valentin, R. (2005) Dynamics of electric field screening in photoconductive THz sources with spatially patterned excitation. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Park, Changkun ; Yun, Seok-Oh ; Han, Jeonghu ; Cheon, Sang-Hoon ; Park, Jae-Woo ; Hong, Songcheol (2005) ESD characteristics of GaAs versus silicon diode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jo, Seong June ; Ihn, Soo-Ghang ; Kim, Tae-Woo ; Yee, Ki-Ju ; Hwang, Moon-Seop ; Lee, Dong-Han ; Song, Jong-In (2005) Electrical and structural properties ofLow-temperature-grown in0.53Ga0.47ason GaAs using an inGaAlAs metamorphic buffer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tripon-Canseliet, C. ; Faci, S. ; Deshours, F. ; Algani, C. ; Alquié, G. ; Formont, S. ; Chazelas, J. (2005) Electromagnetic modeling and characterization of an optically-controlled microwave phase shifterin GaAs integrated technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tan, S. G. ; McErlean, E. P. ; Hong, J. -S. ; Cui, Z. ; Wang, L. ; Greed, R. B. ; Voyce, D. C. (2005) Electromechanical modelling of high power RF-MEMS switches with ohmic contact. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Brueckner, K. ; Förster, Ch. ; Tonisch, K. ; Cimalla, V. ; Ambacher, O. ; Stephan, R. ; Blau, K. ; Hein, M. A. (2005) Electromechanical resonances of SiC and AlN beams under ambient conditions. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pekarik, John J. ; Coolbaugh, Douglas D. ; Cottrell, Peter E. ; Csutak, Sebastian M. ; Greenberg, David R. ; Jagannathan, Basanth ; Sanderson, David I. ; Wagner, Lawrence ; Walko, Joseph ; Wang, Xudong ; Watts, Josef (2005) Enabling RFCMOS solutions for emergingadvanced applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Tsai, Jung-Hui ; Kang, Yu-Chi (2005) Extremely high gate turn-on voltage of GaAs double camel-like gate field-effect transistor. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Moutier, F. ; Polleux, J.L. ; Rumelhard, C. ; Schumacher, H. (2005) Frequency response enhancement of a single strained layer SiGe phototransistor basedon physical simulations. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jeong, Jin-Cheol ; Chang, Dong-Pil ; Shin, Dong-hwan ; Yom, In-Bok (2005) GaAs MMICs for use in upconverter modulefor Ka-band OBS satellite transponders. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Reedy, Ronald E. ; Camparini, Massimo Claudio (2005) Impact of RFIC integration of system and subsystem blocks on MCM solutions. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Resca, D. ; Cignani, R. ; Raffo, A. ; Santarelli, A. ; Vannini, G. (2005) Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kawashima, Munenari ; Nakagawa, Tadao ; Yamaguchi, Yo ; Araki, Katsuhiko (2005) Improved technique for reflection performances in broadband variable gain low noise amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Oka, Tohru ; Fujita, Koichiro ; Yamashita, Masaharu ; Twynam, John K. ; Sakuno, Keiichi (2005) InGaP/GaAs/AlGaAs power DHBT with enhanced linearity near saturation region. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Zhu, Xin ; Wang, Jing ; Pavlidis, Dimitris (2005) InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tsai, Jung-Hui ; Kang, Yu-Chi ; Lour, Wen-Shiung (2005) InP/InGaAs resonant tunneling diode with six-route negative differential resistances. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bunz, B. ; Ahmed, A. ; Kompa, G. (2005) Influence of envelope impedance termination on RF behaviour ofGaN HEMT power devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lisec, T. ; Wagner, B. (2005) Integration Aspects of RF-MEMS Technologies. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Colantonio, P. ; Giannini, Franco ; Limiti, Ernesto ; Nanni, Antonio (2005) Investigation of IMD asymmetry in microwave FETs via volterra series. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

van Heijningen, M. ; van Vliet, F.E. ; Quay, R. ; van Raay, F. ; Kiefer, R. ; Müller, S. ; Krausse, D. ; Seelmann-Eggebert, M. ; Mikulla, M. ; Schlechtweg, M. (2005) Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Myslinski, Maciej ; Schreurs, Dominique ; Remley, Kate A. ; McKinley, Michael D. ; Nauwelaers, Bart (2005) Large-signal behavioral model of a packaged RF amplifier based on QPSK-like multisine measurements. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ziaei, Afshin ; Dean, Thierry ; Mancuso, Yves (2005) Lifetime characterization of capacitive power RF MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tartarin, J.-G. ; Soubercaze-Pun, G. ; Bary, L. ; Chambon, C. ; Gribaldo, S. ; Llopis, O. ; Escotte, L. ; Plana, R. ; Delage, S. L. ; Gaquière, C. ; Graffeuil, J. (2005) Low Frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Butel, Y. ; Langrez, D. ; Villemazet, J.F. ; Coury, G. ; Decroix, J. ; Cazaux, Jean-Louis (2005) Low cost MMIC chipset for VSAT ground terminals. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Myoung, Seong-Sik ; Cheon, Sang-Hoon ; Yook, Jong-Gwan (2005) Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Borgarino, M. ; Rossi, M. ; Fantini, F. (2005) Low noise, low interference automated bias networks for low frequency noise characterization set-up’s. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Dubuc, D. ; De Raedt, W. ; Carchon, G. ; Do, M.N. ; Fourn, E. ; Grenier, K. ; Plana, R. (2005) MEMS-IC integration for RF and millimeterwave applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Vendier, O. ; Paillard, M. ; Legay, H. ; Schaffauser, C. ; Forrestier, S. ; Caille, G. ; Drevon, C. ; Cazaux, Jean-Louis (2005) Main achievements to date toward the use of RF MEMS into space satellite payloads. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Van Moer, Wendy ; Yves, Rolain ; Alain, Barel (2005) Measuring and modelling a microwave amplifier by means of the LSNA. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Silveira, D. ; Gadringer, M. ; Arthaber, H. ; Mayer, M. ; Magerl, G. (2005) Modeling, analysis and classification of a PA based on identified Volterra Kernels. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

De Meyer, S. ; Philippon, Audrey ; Campovecchio, M. ; Charbonniaud, C. ; Piotrowicz, Stéphane ; Floriot, Didier ; Quéré, Raymond (2005) Modelling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Paillard, M. ; Bodereau, F. ; Drevon, C. ; Monfraix, P. ; Cazaux, Jean-Louis ; Bodin, L. ; Guyon, P. (2005) Multilayer RF PCB for space applications : technological and interconnections trade-off. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wiegner, D. ; Merk, T. ; Seyfried, U. ; Templ, W. ; Merk, S. ; Quay, R. ; van Raay, F. ; Walcher, H. ; Massler, H. ; Seelmann-Eggebert, M. ; Reiner, R. ; Moritz, R. ; Kiefer, R. (2005) Multistage broadband amplifiers based on GaNHEMT technology for 3G/4G base station applications with extremely high bandwidth. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

De Jaeger, J.C. ; Delage, S. L. ; Dambrine, G. ; Di Forte Poisson, M.A ; Hoel, V. ; Lepilliet, S. ; Grimbert, B. ; Morvan, E. ; Mancuso, Y. ; Gauthier, G. ; Lefrançois, A. ; Cordier, Y. (2005) Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Zhu, Yu ; Wei, Cejun ; Oleksiy, Klimashov ; Cindy, Zhang ; Yevgeniy, Tkachenko (2005) Nonlinear model of epitaxial layer resistor on GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ku, Janam ; Min, Younghoon ; Lee, Donghyun ; Song, Iljong ; Shim, Dongsig ; Lee, Namkyoung ; Lee, Seonghearn ; Lee, Yongtaek ; Choi, Munsung ; Kim, Jonghyck (2005) Novel SPICE macro modeling for an integrated si schottky barrier diode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Rehder, E. M. ; Cismaru, C. ; Zampardi, P. J. ; Welser, R. E. (2005) Novel base doping profile for improved speed and power. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Angelov, I. ; Desmaris, V. ; Dynefors, K. ; Nilsson, P.Å. ; Rorsman, N. ; Zirath, H. (2005) On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Meliani, C. ; Rudolph, M. ; Heinrich, W. (2005) On-chip GaAs-HBTbroadband-coupled high-bitrate modulator driver TWAs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ismail, N. ; Malbert, N. ; Labat, N. ; Touboul, A. ; Muraro, J-L. ; Brasseau, F. ; Langrez, D. (2005) On-state safe operating area of GaAs MESFET defined for non linear applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ismail, N. ; Malbert, N. ; Labat, N. ; Touboul, A. ; Muraro, J-L. ; Brasseau, F. ; Langrez, D. (2005) On-state safe operating area of GaAs MESFET defined for non linear applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Schaffauser, C. ; Vendier, O. ; Forestier, S. ; Michard, F. ; Geffroy, D. ; Drevon, C. ; Villemazet, JF. ; Cazaux, Jean-Louis ; Delage, S. L. ; Roux, JL. (2005) Optimised thermal and microwave packaging for wide-band gap transistors : diamond & flip chip. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tinella, C. ; Gianesello, F. ; Gloria, D. ; Raynaud, C. ; Delatte, P. ; Engelstein, A. ; Fournier, J.M. ; Benech, Ph. ; Jomaah, J. (2005) Partially depleted CMOS SOI technology for low power RF applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jiang, Ningyue ; Ma, Zhenqiang (2005) Power gain analysis of SiGe HBTs with constant ge strain. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Larhèche, H. ; Faure, B. ; Richtarch, C. ; Letertre, F. ; Langer, R. ; Bove, P. (2005) Progress in microwave GaN HEMT grown by MBE on silicon and smart Cut TM engineered substrates for high power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Larhèche, H. ; Faure, B. ; Richtarch, C. ; Letertre, F. ; Langer, R. ; Bove, P. (2005) Progress in microwave GaN HEMT grown by MBE on silicon and smart cut TM engineered substrates for high power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Meng, C. C. ; Su, J. Y. ; Tsou, B. C. ; Huang, G. W. (2005) RF characteristics of BJT devices with selectively or fully ion-implanted collector. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ziegler, V. ; Siegel, C. ; Schönlinner, B. ; Prechtel, U. ; Schumacher, H. (2005) RF-MEMS switches based on a low-complexity technology and related aspects of MMIC integration. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Hegazy, Hazem Mahmoud (2005) RLC Parasitic extraction and circuit model optimization for Cu/SiO2-90nm inductance structures. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Gaddi, Roberto ; Gnudi, Antonio ; Tazzoli, Augusto ; Meneghesso, Gaudenzio ; Zanoni, Enrico (2005) Reliability of RF-MEMS. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yamanaka, Koji ; Iyomasa, Kazuhiro ; Ohtsuka, Hiroshi ; Nakayama, Masatoshi ; Tsuyama, Yoshinori ; Kunii, Tetsuo ; Kamo, Yoshitaka ; Takagi, Tadashi (2005) S and C band Over 100W GaN HEMT 1-chip high power amplifiers with cell division configuration. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ketterl, T. ; Weller, T. (2005) SPDT RF MEMS switch using a single bias voltage and based on dual series and shunt capacitive MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jiang, Ningyue ; Ma, Zhenqiang ; Ma, Pingxi ; Reddy, Vijay ; Racanelli, Marco (2005) SiGe power HBT design considerations for IEEE 802.11 applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raffo, A. ; Santarelli, A. ; Traverso, P.A. ; Vannini, G. ; Filicori, F. (2005) Simplified validation of non-linear models for micro- and millimeter-wave electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lin, Chien-Cheng ; Hsu, Yu-Cheng (2005) Single-chip dual-band WLAN power amplifierusing inGaP/GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Mishra, Umesh K. (2005) Status of AlGaN/GaN HEMT technology-A UCSB perspective. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chokshi, Trushal ; Peroulis, Dimitrios (2005) Stress-induced failure modes in high-tuning range RF MEMS varactors. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Johansen, T.K. ; Krozer, V. ; Vidkjær, J. ; Djurhuus, T. (2005) Substrate effects in wideband SiGe HBT mixer circuits. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Herzel, Frank ; Piz, Maxim (2005) System-level simulation of a noisy phase-locked loop. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Cidronali, A. ; Camprini, M. ; Magrini, I. ; Bertran, E. ; Athanasopoulos, N. ; Makri, R. ; Cignani, R. ; Vannini, G. ; Portilla, J. ; Casas, P. ; Vryssas, K. ; Samelis, A. ; Manes, G. (2005) TX system-level analysis by behavioral modeling of RF building blocks: the IEEE802.11a and IEEE802.15.3a case studies. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Coccetti, F. ; Ducarouge, B. ; Scheid, E. ; Dubuc, D. ; Grenier, K. ; Plana, R. (2005) Thermal analysis of RF-MEMS switches for power handling front-end. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Khan, A. ; Dharmasiri, C. N. ; Miura, T. ; Rezazadeh, A. A. (2005) Thermal characterisation and analysis of two tone intermodulation distortion in InGaP/GaAs DHBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Angelini, A. ; Furno, M. ; Cappelluti, F. ; Bonani, F. ; Pirola, M. ; Ghione, G. (2005) Thermal design of power GaN FETs in microstrip and coplanar MMICs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Floriot, D. ; Jacquet, J-C. ; Chartier, E. ; Coupat, J-M. ; Eudeline, P. ; Auxemery, P. ; Blanck, H. (2005) Thermal management of power HBT inpulsed operating mode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Orengo, G. ; Colantonio, P. ; Serino, A. ; Giannini, F. ; Ghione, G. ; Pirola, M. ; Stegmayer, G. (2005) Time-domain neural network characterization for dynamic behavioral models of power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Noh, Y. S. ; Yom, I. B. ; Park, C. S. (2005) Two-stage adaptive power amplifier MMIC for handset applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg (2005) Ultra high IP3 passive GaAs FET mixers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Masood, Syed M. ; Johansen, Tom K. ; Vidkjær, Jens ; Krozer, Viktor (2005) Uncertainty estimation in SiGe HBT small-signal modeling. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kallfass, I. ; Zhang, C. ; Grunenputt, J. ; Teyssandier, C. ; Schumacher, H. (2005) Verification of a frequency dispersion modelin the performance of a GaAs pHEMT travelling-wave MMIC. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Min, Byung-Wook ; Rebeiz, Gabriel M. (2005) W-band low-loss wafer-scale package for RFMEMS. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raskin, Jean-Pierre (2005) Wideband characterization and simulation of advanced MOS devices for RF applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Krozer, Viktor ; Johansen, Tom K. ; Djurhuus, T. ; Vidkjær, Jens (2005) Wideband monolithic microwave integrated circuit frequency converters with GaAs mHEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.