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Number of documents:173.

Torregrosa-Penalva, German and Asensio-L´opez, Alberto and Alvaro, Blanco-del-Campo (2005) Electro-thermal model extraction for MMIC Power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Milivojevic, B. and Gu, Z. and Thiede, A. (2005) 10 Gbit/s differential amplifier demonstrating striplines in 0.18µm CMOS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Veenstra, H. and Hurkx, G.A.M. and Heijden, E. v.d. and Vaucher, C.S. and Apostolidou, M. and Jeurissen, D. and Deixler, P. (2005) 10-40GHz design in SiGe-BiCMOS and Si-CMOS – linking technology and circuits to maximize performance. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Monfraix, Philippe and Drevon, C. and Schaffauser, Chloé and Paillard, Mathieu and Vendier, Olivier and Cazaux, Jean-Louis (2005) 3D packaging for space application : imagination and reality. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Konczykowska, A. and Jorge, F. and Riet, M. and Moulu, J. and Godin, J. (2005) 50 Gb/s DFF and decision circuits in InP DHBT technology for ETDM systems. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Maas, A.P.M. and Hoogland, J.A. (2005) 60 GHz GaAs MMIC mixers with integrated LO buffer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chang, C.-P. and Yen, C.-C. and Chuang, H.-R. (2005) A 0.18-µm 2.4~6GHz CMOS broadband differential LNA for WLAN and UWB receiver. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Maekawa, Arata and Nagahara, Masaki and Yamamoto, Takashi and Sano, Seigo (2005) A 100 W high-efficiency GaN HEMT amplifier forS-band wireless system. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Muller, A. and Thiel, M. and Irion, H. and Ruoß, H.-O. (2005) A 122 GHz SiGe active subharmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Schwörer, C. and Campos Roca, Y. and Leuther, A. and Tessmann, A. and Seelmann-Eggebert, M. and Massler, H. and Schlechtweg, M. and Weimann, G. (2005) A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bao, Mingquan and Li, Yinggang (2005) A 17 to 26 GHz micromixer in SiGe BiCMOS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wu, L. and Basaran, U. and Tao, R. and Berroth, M. and Boos, Z. (2005) A 2 GHz CMOS dB-linear programmable-gain amplifier with 51 dB dynamic range. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Mazouffre, Olivier and Lapuyade, Hervé and Begueret, Jean-Baptiste and Cathelin, Andreia and Belot, Didier and Hellmuth, Patrick and Deval, Yann (2005) A 23-24 GHz low power frequency synthesizer in 0.25 m SiGe. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lenk, F. and Klockenhoff, H. and Kurpas, P. and Maaßdorf, A. and Wurfl, H. J. and Heinrich, W. (2005) A 3.2 W coplanar single-device X-band amplifier with GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chen, Wei-Chien and Chen, Shih-Yu and Tsai, Jeng-Han and Huang, Tian-Wei and Wang, Huei (2005) A 38-48-GHz miniature MMIC subharmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Barbier, T. and Mazel, F. and Reig, B. and Monfraix, P. (2005) A 3D wideband package solution using MCM-D BCB technology for tile TR module. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Anowar Masud Kelly, M. and Zirath, Herbert and Kelly, Matthew (2005) A 45 dB variable gain low noise MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Colantonio, P. and Giannini, F. and Giofrè, R. and Limiti, E. and Serino, A. and Peroni, M. and Romanini, P. and Proietti, C. (2005) A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Häfele, M. and Trasser, A. and Beilenhoff, K. and Schumacher, H. (2005) A GaAs distributed amplifier with an output voltage of 8.5Vpp for 40Gb/s modulators. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Han, Qing and Shimura, Atsushi and Inagaki, Keizo and Ohira, Takashi and Akaike, Masami (2005) A GaAs monolithic anti-series varactor pair for voltage-controlled capacitance with reduced RF nonlinearity. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Godin, J. and Riet, M. and Konczykowska, A. and Berdaguer, P. and Kahn, M. and Bove, P. and Lahreche, H. and Langer, R. and Lijadi, M. and Pardo, F. and Bardou, N. and Pelouard, J-L. and Maneux, C. and Belhaj, M. and Grandchamp, B. and Labat, N. and Touboul, A. and Bru-Chevallier, C. and Chouaib, H. and Benyattou, T. (2005) A GaAsSb/InP HBT circuit technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Weng, Ching-Chih and Tsai, Zuo-Min. and Wang, Huei (2005) A K-Band miniature, broadband, high output power HBT MMIC balanced doubler with integrated balun. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Girbau, D. and Otegi, N. and Pradell, L. and Lázaro, A. (2005) A MEMS capacitor with improved RF power handling capability. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Florian, C. and Scappaviva, F. and Feudale, M. and Monaco, V.A. and Filicori, F. (2005) A V band singly balanced diode mixer for space application. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Malmkvist, Mikael and Mellberg, Anders and Grahn, Jan (2005) A W-band MMIC amplifier using 70-nm gate length InP HEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Puyal, V. and Konczykowska, A. and Nouet, P. and Bernard, S. and Riet, M. and Jorge, F. and Godin, J. (2005) A broad-band active frequency doubler operating up to 120 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Krishnamurthy, L. and Sun, Q. and Vo, V. T. and Parkinson, G. and Paul, D. K. and Williams, K. and Rezazadeh, A. A. (2005) A comparative study of active and passive GaAs microwave couplers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Camarchia, V. and Donati Guerrieri, S. and Pirola, M. and Teppati, V. and Ghione, G. and Peroni, M. and Lanzieri, C. (2005) A comprehensive class A to B power and load-pull characterization of GaN HEMT son SiC and sapphire substrates. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

de Hek, A.P. and van der Bent, G. and van Wanum, M. and van Vliet, F.E. (2005) A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jeong, Hee-Young and Park, Sang-Keun and Ryu, Nam-Sik and Jeong, Yong-Chae and Yom, In-Bok and Kim, Young (2005) A design of K-band predistortion linearizer using reflective schottky diode for satellite TWTAs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Manan, Vikas and Long, Stephen I. (2005) A dual band (10/16 GHz) p-HEMT VCO. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wanner, Robert and Schäfer, Herbert and Lachner, Rudolf and Olbrich, Gerhard R. and Russer, Peter (2005) A fully integrated SiGe low phase noise push-push VCO for 82 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kärnfelt, Camilla and Kozhuharov, Rumen and Zirath, Herbert (2005) A high purity 60 GHz-band single chip X8 multiplier with low phase noise. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Milosevic, Dusan and van der Tang, Johan and van Roermund, Arthur (2005) A high-efficiency HBT-based class-E power amplifier for 2 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Florian, C. and Cignani, R. and Vannini, G. and Comparini, M.C. (2005) A ku band monolithic power amplifier for TT&C applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bhatnagar, Monica and Morkner, Henrik (2005) A low cost SMT integrated frequency doubler and power amplifier for 30GHz DBS uplink applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Suh, Young-Ho and Richardson, David and Dadello, Anna and Mahon, Simon and Harvey, James T. (2005) A low-cost high performance GaAs MMIC package using air-cavity ceramic quad flat non-leaded package up to 40 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Maas, A.P.M. and van Vliet, F.E. (2005) A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chong, Thomas (2005) A low–noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Peña, R. and Gómez, C. and García, J. A. (2005) A measurement system for FET derivative extraction under dynamic operating regime. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wolf, G. and Demichel, S. and Leblanc, R. and Blache, F. and Lefèvre, R. and Dambrine, G. and Happy, H. (2005) A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

van Raay, F. and Quay, R. and Kiefer, R. and Fehrenbach, W. and Bronner, W. and Kuri, M. and Benkhelifa, F. and Massler, H. and Müller, S. and Mikulla, M. and Schlechtweg, M. and Weimann, G. (2005) A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wu, Pei-Si and Lin, Chin-Shen and Huang, Tian-Wei and Wang, Huei and Wang, Yu-Chi and Wu, Chan-Shin (2005) A millimeter-wave ultra-compact broadband diode mixer using modified marchand balun. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yeh, Mei-Chao and Tsai, Zuo-Min and Wang, Huei (2005) A miniature DC-to-50 GHz CMOS SPDT distributed switch. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

ROUX, P. and BAEYENS, Y. and WOHLGEMUTH, O. and CHEN, Y.K. (2005) A monolithic integrated 180 GHz SiGe HBT Push-Push Oscillator. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Burke, Darren R. and Brazil, Thomas J. (2005) A new non-quasi-static non-linear MOSFET model based on physical analysis. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Horng, T.S. and Huang, C.H. and Han, F.Y. and Li, C.J. (2005) A novel closed-form approach for comparing the Q-factor responses between the asymmetric and symmetric on-chip inductors. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

KASHIWA, T. and OHNISHI, Y. and YAMAMOTO, K. and OHSHIMA, H. (2005) A novel linearizing technique using dual diode based linearizers for lightweight power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Heyen, Johann and Jacob, Arne F. (2005) A novel package approach for multichip modules based on anisotropic conductive adhesives. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Mehdi, M. and Rumelhard, C. and Polleux, J.L. and Lefebvre, B. (2005) A novel technique for obtaining LO and RF (LSB) Rejection in 25-40 GHz microwave up conversion mixers based on the concepts of distributed and double balanced mixing. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Doud, Scarlet M. and Shastry, Prasad N. (2005) A novel wideband MMIC voltage controlled attenuator with a bandpass filter topology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Huber, Meik and von der Mark, Stefan and Boeck, Georg (2005) A power efficient active K band mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Zamanillo, J.M. and Ingelmo, H. and Perez-Vega, C. and Mediavilla, A. (2005) A realistic large-signal microwave PHEMT transistors model for SPICE. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Santarelli, A. and Di Giacomo, V. and Raffo, A. and Traverso, P. A. and Vannini, G. and Filicori, F. and Monaco, V. A. (2005) A simple non-quasi-static non-linear modelof electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lonac, J.A. and Santarelli, A. and Melczarsky, I. and Filicori, F. (2005) A simple technique for measuring the thermal impedance and the thermal resistance of HBTs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Magrini, I. and Camprini, M. and Cidronali, A. and Collodi, G. and Manes, G. (2005) A ultra low-power highly-linear HITD based down-converter for K-band applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Seo, Sanghyun and Pavlidis, Dimitris and Moon, Jeong-Sun (2005) A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bae, Hyun-Cheol and Kim, Sang-Hoon and Song, Young-Joo and Lee, Sang-Heung and Lee, Ja-Yol and Kang, Jin-Young (2005) A wideband fully integrated SiGe BiCMOS medium power amplifier. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bakalski, W. and Vasylyev, Andriy and Simburger, Werner and Kall, Marcus and Schmid, Alfons and Kitlinski, Krzysztof (2005) A4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with On-chip output matching. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Movahhedi, Masoud and Abdipour, A. (2005) Accelerating theTransient Simulation of Semiconductor Devices Using Filter-Bank Transforms. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Marinkovic, Zlatica and Markovic, Vera (2005) Accurate temperature dependent noise models of microwave transistors based on neural networks. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Clausen, M.C. and McMonagle, J. (2005) Advanced manufacturing techniques for next generation power FET technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Holm, M.A. and Brookbanks, D. M. (2005) Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Comparini, M.C. and Di Marcantonio, U. and Feudale, M. and Piloni, V. and Suriani, A. (2005) Advanced multi chip module solutions for RF and digital space applications: status and perspective. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pavlidis, Dimitris and Valizadeh, Pouya and Hsu, S. H. (2005) AlGaN/GaN high electron mobility transistor (HEMT) reliability. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Centurelli, F. and Luzzi, Raimondo and Marietti, Piero and Scotti, Giuseppe and Tommasino, Pasquale and Trifiletti, Alessandro (2005) An active balun for high-CMRR IC design. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kim, Sung Yong and Jang, Mi Ae and Jeon, Ki Kyung and Kim, Young and Jeong, Yong Chae (2005) An analog linearizer using second harmonic signals feedforwarding. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Sayed, Ahmed and Boeck, Georg (2005) An empirical large signal model for silicon carbide MESFETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yun, Wansuk and Govind, Vinu and Dalmia, Sidharth and Sundaram, Venky and Swaminathan, Madhavan and White, George E. (2005) An integrated double balanced mixer on multilayer liquid crystalline polymer (M-LCP) based substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Barnes, A. R. and Boetti, A. and Marchand, L. and Hopkins, J. (2005) An overview of microwave component requirements for future space applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Sen, Padmanava and Srirattana, Nuttapong and Raghavan, Arvind and Laskar, Joy (2005) Analysis of Device Scaling towards the performance enhancement of Si-MOSFET RF amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Takayanagi, H. and Nakano, H. and Horio, K. (2005) Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ing Ng, Geok and Radhakrishnan, K. and Wang, Hong (2005) Are We There Yet ? – A Metamorphic HEMT and HBT Perspective. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

LAPORTE, C. and LAPIERRE, L. and MALLET, A. and ANAKABE, A. (2005) Behaviour of a TWTA with a single or multicarrier input signal for telecommunication applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ferndahl, M. and Motlagh, B.M. and Masud, A. and Angelov, I. and Vickes, H. -O. and Zirath, H. (2005) CMOS devices and circuits for microwave and millimetre wave applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Long, John R. (2005) Can silicon catch the millimeter wave? In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Burke, P.J. and Yu, Z. and Rutherglen, C. (2005) Carbon nanotubes for RF and microwaves. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pacheco, Sergio P. and Zurcher, Peter and Young, Steven R. and Weston, Don and Dauksher, William J. and Auciello, Orlando and Carlisle, John A. and Kane, Neil and Birrell, James P. (2005) Characterization of low-temperature ultrananocrystalline TM diamond RF MEMS resonators. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kim, Yong-Dae and Sunwoo, Kook-Hyun and Choa, Sung-Hoon and Kim, Duck-Hwan and Song, In-Sang and Yook, Jong-Gwan (2005) Characterization of various shaped 5 GHz TFBARs based on 3D full-wave modeling. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chao, Shih-Fong and Tsai, Zuo-Min and Lin, Kun-You and Wang, Huei (2005) Compact W-band SPQT MMIC switch using traveling wave concept. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bessemoulin, A. and Mahon, S. and Dadello, Anna and McCulloch, G. and Harvey, J. (2005) Compact and broadband microstrip power amplifier MMIC with 400-mW output power using0.15-µm GaAs PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raffo, A. and Lonac, J.A. and Menghi, S. and Cignani, R. (2005) Comparison between equivalent-circuit and black-box non-linear models for microwave electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lees, Jonathan and Benedikt, Johannes and Bunz, B. and Gaquiere, Christophe and Ducatteau, D. and Marquez-Segura, E. and Martin-Guerrero, T.M. and Barel, Alain (2005) Comparison of load-pull measurement results of a 4W pHEMT involving five european laboratories. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chee, Joolien and Karru, Ratnakar and Fisher, Timothy S. and Peroulis, Dimitrios (2005) DC – 65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tan, Hiang Teik and Hunter, Ian C. and Snowden, Christopher M. and Ranson, Richard (2005) Design and fabrication of short gate-length heterostructure charge coupled devices for transversal filter applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Convert, Emmanuelle and Beasly, Paul and Mahon, Simon and Dadello, Anna and Harvey, James (2005) Design of broadband, highly integrated, 20-30 GHz and 35-45 GHz MMIC Up-converters. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pérez-Pérez, L. A. and Reynoso-Hernández, J. A. and Loo-Yau, J. R. and Soberanes-Flores, G. and Ascencio-Ramírez, H. and Rangel-Rojo, R. (2005) Detection and mixing of two modulated optical signals using only a single GaAs FET (experimental study). In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

O’Droma, M. and Bertran, E. and Gadringer, M. and Donati, S. and Zhu, A. and Gilabert, P. L. and Portilla, J. (2005) Developments in Predistortion and Feedforward Adaptive Power Amplifier Linearisers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wohlgemuth, O. and Müller, W. and Paschke, P. and Link, T. and Lederer, R. and Kolb, B. and Dotzauer, H. (2005) Digital SiGe-chips for data transmission up to 85 Gbit/s. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Dambrine, G. and Gloria, D. and Scheer, P. and Raynaud, C. and Danneville, F. and Lepilliet, S. and Siligaris, A. and Pailloncy, G. and Martineau, B. and Bouhana, E. and Valentin, R. (2005) Dynamics of electric field screening in photoconductive THz sources with spatially patterned excitation. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Park, Changkun and Yun, Seok-Oh and Han, Jeonghu and Cheon, Sang-Hoon and Park, Jae-Woo and Hong, Songcheol (2005) ESD characteristics of GaAs versus silicon diode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jo, Seong June and Ihn, Soo-Ghang and Kim, Tae-Woo and Yee, Ki-Ju and Hwang, Moon-Seop and Lee, Dong-Han and Song, Jong-In (2005) Electrical and structural properties ofLow-temperature-grown in0.53Ga0.47ason GaAs using an inGaAlAs metamorphic buffer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tripon-Canseliet, C. and Faci, S. and Deshours, F. and Algani, C. and Alquié, G. and Formont, S. and Chazelas, J. (2005) Electromagnetic modeling and characterization of an optically-controlled microwave phase shifterin GaAs integrated technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tan, S. G. and McErlean, E. P. and Hong, J. -S. and Cui, Z. and Wang, L. and Greed, R. B. and Voyce, D. C. (2005) Electromechanical modelling of high power RF-MEMS switches with ohmic contact. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Brueckner, K. and Förster, Ch. and Tonisch, K. and Cimalla, V. and Ambacher, O. and Stephan, R. and Blau, K. and Hein, M. A. (2005) Electromechanical resonances of SiC and AlN beams under ambient conditions. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pekarik, John J. and Coolbaugh, Douglas D. and Cottrell, Peter E. and Csutak, Sebastian M. and Greenberg, David R. and Jagannathan, Basanth and Sanderson, David I. and Wagner, Lawrence and Walko, Joseph and Wang, Xudong and Watts, Josef (2005) Enabling RFCMOS solutions for emergingadvanced applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Taher, H. and Schreurs, D. and Nauwelaers, B. (2005) Extraction of small signal equivalent circuit model parameters for statistical modeling of HBT using artificial neural. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tsai, Jung-Hui and Kang, Yu-Chi (2005) Extremely high gate turn-on voltage of GaAs double camel-like gate field-effect transistor. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Martín-Guerrero, T.M. and Camacho-Peñalosa, C. (2005) Frequency domain-based extraction method of one-port device’s non-linear state functions from large-signal measurements. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Moutier, F. and Polleux, J.L. and Rumelhard, C. and Schumacher, H. (2005) Frequency response enhancement of a single strained layer SiGe phototransistor basedon physical simulations. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jeong, Jin-Cheol and Chang, Dong-Pil and Shin, Dong-hwan and Yom, In-Bok (2005) GaAs MMICs for use in upconverter modulefor Ka-band OBS satellite transponders. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Martin, T. and Uren, M. J. and Balmer, R.S. and Soley, D. and Wallis, D. J. and Hilton, K. P. and Maclean, J. O. (2005) GaN H-FET development at QinetiQ. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Shimawaki, Hidenori and Miyamoto, Hironobu (2005) GaN-based FETs for microwave high-power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Girbau, David and Otegi, Nerea and Pradell, Lluís and Lázaro, Antonio (2005) Generation of third and higher-order intermodulation products in MEMS capacitors, and their effects. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Colantonio, P. and Giannini, F. and Giofrè, R. and Yarleque Medina, M.A. and Schreurs, D. and Nauwelaers, B. (2005) High Frequency Class e Design Methodologies. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Shohat Nightingale, J. and Robertson, I. D. and Nightingale, S. J. (2005) High efficiency 10Gb/s optical modulator driver amplifier using a power pHEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bessemoulin, A. and Fellon, P. and Gruenenpuett, J. and Massler, H. and Reinert, W. and Kohn, E. and Tessmann, A. (2005) High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

van Raay, F. and Quay, R. and Kiefer, R. and Walcher, H. and Kappeler, O. and Seelmann-Eggebert, M. and Müller, S. and Schlechtweg, M. and Weimann, G. (2005) High power/High bandwidth GaN MMICs and hybrid amplifiers: design and characterization. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Doand, M.N. and Dubuc, D. and Coustou, A. and Tournier, E. and Ancey, P. and Plana, R. (2005) Highly linear 20 GHz-Micromixer in SiGe bipolar technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Grenier, K. and Mazenq, L. and Dubuc, D. and Bouchriha, F. and Coccetti, F. and Ojefors, E. and Lindberg, P. and Rydberg, A. and Berntgen, J. and Rabe, W.J. and Sonmez, E. and Abele, P. and Schumacher, H. and Plana, R. (2005) IC compatible MEMS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Reedy, Ronald E. and Camparini, Massimo Claudio (2005) Impact of RFIC integration of system and subsystem blocks on MCM solutions. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Resca, D. and Cignani, R. and Raffo, A. and Santarelli, A. and Vannini, G. (2005) Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kawashima, Munenari and Nakagawa, Tadao and Yamaguchi, Yo and Araki, Katsuhiko (2005) Improved technique for reflection performances in broadband variable gain low noise amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Oka, Tohru and Fujita, Koichiro and Yamashita, Masaharu and Twynam, John K. and Sakuno, Keiichi (2005) InGaP/GaAs/AlGaAs power DHBT with enhanced linearity near saturation region. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Driad, R. and Schneider, K. and Makon, R. E. and Lang, M. and Nowotny, U. and Aidam, R. and Quay, R. and Schlechtweg, M. and Mikulla, M. and Weimann, G. (2005) InP DHBT-based IC technology for high-speed data communications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Zhu, Xin and Wang, Jing and Pavlidis, Dimitris (2005) InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tsai, Jung-Hui and Kang, Yu-Chi and Lour, Wen-Shiung (2005) InP/InGaAs resonant tunneling diode with six-route negative differential resistances. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bunz, B. and Ahmed, A. and Kompa, G. (2005) Influence of envelope impedance termination on RF behaviour ofGaN HEMT power devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lisec, T. and Wagner, B. (2005) Integration Aspects of RF-MEMS Technologies. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Colantonio, P. and Giannini, Franco and Limiti, Ernesto and Nanni, Antonio (2005) Investigation of IMD asymmetry in microwave FETs via volterra series. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

van Heijningen, M. and van Vliet, F.E. and Quay, R. and van Raay, F. and Kiefer, R. and Müller, S. and Krausse, D. and Seelmann-Eggebert, M. and Mikulla, M. and Schlechtweg, M. (2005) Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Myslinski, Maciej and Schreurs, Dominique and Remley, Kate A. and McKinley, Michael D. and Nauwelaers, Bart (2005) Large-signal behavioral model of a packaged RF amplifier based on QPSK-like multisine measurements. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ziaei, Afshin and Dean, Thierry and Mancuso, Yves (2005) Lifetime characterization of capacitive power RF MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tartarin, J.-G. and Soubercaze-Pun, G. and Bary, L. and Chambon, C. and Gribaldo, S. and Llopis, O. and Escotte, L. and Plana, R. and Delage, S. L. and Gaquière, C. and Graffeuil, J. (2005) Low Frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Butel, Y. and Langrez, D. and Villemazet, J.F. and Coury, G. and Decroix, J. and Cazaux, Jean-Louis (2005) Low cost MMIC chipset for VSAT ground terminals. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Myoung, Seong-Sik and Cheon, Sang-Hoon and Yook, Jong-Gwan (2005) Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Borgarino, M. and Rossi, M. and Fantini, F. (2005) Low noise, low interference automated bias networks for low frequency noise characterization set-up’s. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Dubuc, D. and De Raedt, W. and Carchon, G. and Do, M.N. and Fourn, E. and Grenier, K. and Plana, R. (2005) MEMS-IC integration for RF and millimeterwave applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Vendier, O. and Paillard, M. and Legay, H. and Schaffauser, C. and Forrestier, S. and Caille, G. and Drevon, C. and Cazaux, Jean-Louis (2005) Main achievements to date toward the use of RF MEMS into space satellite payloads. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Van Moer, Wendy and Yves, Rolain and Alain, Barel (2005) Measuring and modelling a microwave amplifier by means of the LSNA. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Silveira, D. and Gadringer, M. and Arthaber, H. and Mayer, M. and Magerl, G. (2005) Modeling, analysis and classification of a PA based on identified Volterra Kernels. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

De Meyer, S. and Philippon, Audrey and Campovecchio, M. and Charbonniaud, C. and Piotrowicz, Stéphane and Floriot, Didier and Quéré, Raymond (2005) Modelling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Paillard, M. and Bodereau, F. and Drevon, C. and Monfraix, P. and Cazaux, Jean-Louis and Bodin, L. and Guyon, P. (2005) Multilayer RF PCB for space applications : technological and interconnections trade-off. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wiegner, D. and Merk, T. and Seyfried, U. and Templ, W. and Merk, S. and Quay, R. and van Raay, F. and Walcher, H. and Massler, H. and Seelmann-Eggebert, M. and Reiner, R. and Moritz, R. and Kiefer, R. (2005) Multistage broadband amplifiers based on GaNHEMT technology for 3G/4G base station applications with extremely high bandwidth. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

De Jaeger, J.C. and Delage, S. L. and Dambrine, G. and Di Forte Poisson, M.A and Hoel, V. and Lepilliet, S. and Grimbert, B. and Morvan, E. and Mancuso, Y. and Gauthier, G. and Lefrançois, A. and Cordier, Y. (2005) Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Zhu, Yu and Wei, Cejun and Oleksiy, Klimashov and Cindy, Zhang and Yevgeniy, Tkachenko (2005) Nonlinear model of epitaxial layer resistor on GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ku, Janam and Min, Younghoon and Lee, Donghyun and Song, Iljong and Shim, Dongsig and Lee, Namkyoung and Lee, Seonghearn and Lee, Yongtaek and Choi, Munsung and Kim, Jonghyck (2005) Novel SPICE macro modeling for an integrated si schottky barrier diode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Rehder, E. M. and Cismaru, C. and Zampardi, P. J. and Welser, R. E. (2005) Novel base doping profile for improved speed and power. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Angelov, I. and Desmaris, V. and Dynefors, K. and Nilsson, P.Å. and Rorsman, N. and Zirath, H. (2005) On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Meliani, C. and Rudolph, M. and Heinrich, W. (2005) On-chip GaAs-HBTbroadband-coupled high-bitrate modulator driver TWAs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ismail, N. and Malbert, N. and Labat, N. and Touboul, A. and Muraro, J-L. and Brasseau, F. and Langrez, D. (2005) On-state safe operating area of GaAs MESFET defined for non linear applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ismail, N. and Malbert, N. and Labat, N. and Touboul, A. and Muraro, J-L. and Brasseau, F. and Langrez, D. (2005) On-state safe operating area of GaAs MESFET defined for non linear applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Schaffauser, C. and Vendier, O. and Forestier, S. and Michard, F. and Geffroy, D. and Drevon, C. and Villemazet, JF. and Cazaux, Jean-Louis and Delage, S. L. and Roux, JL. (2005) Optimised thermal and microwave packaging for wide-band gap transistors : diamond & flip chip. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tinella, C. and Gianesello, F. and Gloria, D. and Raynaud, C. and Delatte, P. and Engelstein, A. and Fournier, J.M. and Benech, Ph. and Jomaah, J. (2005) Partially depleted CMOS SOI technology for low power RF applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jiang, Ningyue and Ma, Zhenqiang (2005) Power gain analysis of SiGe HBTs with constant ge strain. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Larhèche, H. and Faure, B. and Richtarch, C. and Letertre, F. and Langer, R. and Bove, P. (2005) Progress in microwave GaN HEMT grown by MBE on silicon and smart Cut TM engineered substrates for high power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Larhèche, H. and Faure, B. and Richtarch, C. and Letertre, F. and Langer, R. and Bove, P. (2005) Progress in microwave GaN HEMT grown by MBE on silicon and smart cut TM engineered substrates for high power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Meng, C. C. and Su, J. Y. and Tsou, B. C. and Huang, G. W. (2005) RF characteristics of BJT devices with selectively or fully ion-implanted collector. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ziegler, V. and Siegel, C. and Schönlinner, B. and Prechtel, U. and Schumacher, H. (2005) RF-MEMS switches based on a low-complexity technology and related aspects of MMIC integration. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Hegazy, Hazem Mahmoud (2005) RLC Parasitic extraction and circuit model optimization for Cu/SiO2-90nm inductance structures. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Gaddi, Roberto and Gnudi, Antonio and Tazzoli, Augusto and Meneghesso, Gaudenzio and Zanoni, Enrico (2005) Reliability of RF-MEMS. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yamanaka, Koji and Iyomasa, Kazuhiro and Ohtsuka, Hiroshi and Nakayama, Masatoshi and Tsuyama, Yoshinori and Kunii, Tetsuo and Kamo, Yoshitaka and Takagi, Tadashi (2005) S and C band Over 100W GaN HEMT 1-chip high power amplifiers with cell division configuration. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ketterl, T. and Weller, T. (2005) SPDT RF MEMS switch using a single bias voltage and based on dual series and shunt capacitive MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jiang, Ningyue and Ma, Zhenqiang and Ma, Pingxi and Reddy, Vijay and Racanelli, Marco (2005) SiGe power HBT design considerations for IEEE 802.11 applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raffo, A. and Santarelli, A. and Traverso, P.A. and Vannini, G. and Filicori, F. (2005) Simplified validation of non-linear models for micro- and millimeter-wave electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lin, Chien-Cheng and Hsu, Yu-Cheng (2005) Single-chip dual-band WLAN power amplifierusing inGaP/GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Mishra, Umesh K. (2005) Status of AlGaN/GaN HEMT technology-A UCSB perspective. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chokshi, Trushal and Peroulis, Dimitrios (2005) Stress-induced failure modes in high-tuning range RF MEMS varactors. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Johansen, T.K. and Krozer, V. and Vidkjær, J. and Djurhuus, T. (2005) Substrate effects in wideband SiGe HBT mixer circuits. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Herzel, Frank and Piz, Maxim (2005) System-level simulation of a noisy phase-locked loop. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Cidronali, A. and Camprini, M. and Magrini, I. and Bertran, E. and Athanasopoulos, N. and Makri, R. and Cignani, R. and Vannini, G. and Portilla, J. and Casas, P. and Vryssas, K. and Samelis, A. and Manes, G. (2005) TX system-level analysis by behavioral modeling of RF building blocks: the IEEE802.11a and IEEE802.15.3a case studies. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Coccetti, F. and Ducarouge, B. and Scheid, E. and Dubuc, D. and Grenier, K. and Plana, R. (2005) Thermal analysis of RF-MEMS switches for power handling front-end. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Khan, A. and Dharmasiri, C. N. and Miura, T. and Rezazadeh, A. A. (2005) Thermal characterisation and analysis of two tone intermodulation distortion in InGaP/GaAs DHBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Angelini, A. and Furno, M. and Cappelluti, F. and Bonani, F. and Pirola, M. and Ghione, G. (2005) Thermal design of power GaN FETs in microstrip and coplanar MMICs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Floriot, D. and Jacquet, J-C. and Chartier, E. and Coupat, J-M. and Eudeline, P. and Auxemery, P. and Blanck, H. (2005) Thermal management of power HBT inpulsed operating mode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Orengo, G. and Colantonio, P. and Serino, A. and Giannini, F. and Ghione, G. and Pirola, M. and Stegmayer, G. (2005) Time-domain neural network characterization for dynamic behavioral models of power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Noh, Y. S. and Yom, I. B. and Park, C. S. (2005) Two-stage adaptive power amplifier MMIC for handset applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wentzel, Andreas and Pienkowski, Dariusz and Boeck, Georg (2005) Ultra high IP3 passive GaAs FET mixers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Masood, Syed M. and Johansen, Tom K. and Vidkjær, Jens and Krozer, Viktor (2005) Uncertainty estimation in SiGe HBT small-signal modeling. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kallfass, I. and Zhang, C. and Grunenputt, J. and Teyssandier, C. and Schumacher, H. (2005) Verification of a frequency dispersion modelin the performance of a GaAs pHEMT travelling-wave MMIC. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Min, Byung-Wook and Rebeiz, Gabriel M. (2005) W-band low-loss wafer-scale package for RFMEMS. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raskin, Jean-Pierre (2005) Wideband characterization and simulation of advanced MOS devices for RF applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Krozer, Viktor and Johansen, Tom K. and Djurhuus, T. and Vidkjær, Jens (2005) Wideband monolithic microwave integrated circuit frequency converters with GaAs mHEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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