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Number of documents on this level: 1482.

Torregrosa-Penalva, German and Asensio-L´opez, Alberto and Alvaro, Blanco-del-Campo (2005) Electro-thermal model extraction for MMIC Power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Milivojevic, B. and Gu, Z. and Thiede, A. (2005) 10 Gbit/s differential amplifier demonstrating striplines in 0.18µm CMOS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Veenstra, H. and Hurkx, G.A.M. and Heijden, E. v.d. and Vaucher, C.S. and Apostolidou, M. and Jeurissen, D. and Deixler, P. (2005) 10-40GHz design in SiGe-BiCMOS and Si-CMOS – linking technology and circuits to maximize performance. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Monfraix, Philippe and Drevon, C. and Schaffauser, Chloé and Paillard, Mathieu and Vendier, Olivier and Cazaux, Jean-Louis (2005) 3D packaging for space application : imagination and reality. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Konczykowska, A. and Jorge, F. and Riet, M. and Moulu, J. and Godin, J. (2005) 50 Gb/s DFF and decision circuits in InP DHBT technology for ETDM systems. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Maas, A.P.M. and Hoogland, J.A. (2005) 60 GHz GaAs MMIC mixers with integrated LO buffer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chang, C.-P. and Yen, C.-C. and Chuang, H.-R. (2005) A 0.18-µm 2.4~6GHz CMOS broadband differential LNA for WLAN and UWB receiver. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Maekawa, Arata and Nagahara, Masaki and Yamamoto, Takashi and Sano, Seigo (2005) A 100 W high-efficiency GaN HEMT amplifier forS-band wireless system. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Muller, A. and Thiel, M. and Irion, H. and Ruoß, H.-O. (2005) A 122 GHz SiGe active subharmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Schwörer, C. and Campos Roca, Y. and Leuther, A. and Tessmann, A. and Seelmann-Eggebert, M. and Massler, H. and Schlechtweg, M. and Weimann, G. (2005) A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bao, Mingquan and Li, Yinggang (2005) A 17 to 26 GHz micromixer in SiGe BiCMOS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wu, L. and Basaran, U. and Tao, R. and Berroth, M. and Boos, Z. (2005) A 2 GHz CMOS dB-linear programmable-gain amplifier with 51 dB dynamic range. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Mazouffre, Olivier and Lapuyade, Hervé and Begueret, Jean-Baptiste and Cathelin, Andreia and Belot, Didier and Hellmuth, Patrick and Deval, Yann (2005) A 23-24 GHz low power frequency synthesizer in 0.25 m SiGe. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lenk, F. and Klockenhoff, H. and Kurpas, P. and Maaßdorf, A. and Wurfl, H. J. and Heinrich, W. (2005) A 3.2 W coplanar single-device X-band amplifier with GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chen, Wei-Chien and Chen, Shih-Yu and Tsai, Jeng-Han and Huang, Tian-Wei and Wang, Huei (2005) A 38-48-GHz miniature MMIC subharmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Barbier, T. and Mazel, F. and Reig, B. and Monfraix, P. (2005) A 3D wideband package solution using MCM-D BCB technology for tile TR module. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Anowar Masud Kelly, M. and Zirath, Herbert and Kelly, Matthew (2005) A 45 dB variable gain low noise MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Colantonio, P. and Giannini, F. and Giofrè, R. and Limiti, E. and Serino, A. and Peroni, M. and Romanini, P. and Proietti, C. (2005) A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Häfele, M. and Trasser, A. and Beilenhoff, K. and Schumacher, H. (2005) A GaAs distributed amplifier with an output voltage of 8.5Vpp for 40Gb/s modulators. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Han, Qing and Shimura, Atsushi and Inagaki, Keizo and Ohira, Takashi and Akaike, Masami (2005) A GaAs monolithic anti-series varactor pair for voltage-controlled capacitance with reduced RF nonlinearity. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Godin, J. and Riet, M. and Konczykowska, A. and Berdaguer, P. and Kahn, M. and Bove, P. and Lahreche, H. and Langer, R. and Lijadi, M. and Pardo, F. and Bardou, N. and Pelouard, J-L. and Maneux, C. and Belhaj, M. and Grandchamp, B. and Labat, N. and Touboul, A. and Bru-Chevallier, C. and Chouaib, H. and Benyattou, T. (2005) A GaAsSb/InP HBT circuit technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Weng, Ching-Chih and Tsai, Zuo-Min. and Wang, Huei (2005) A K-Band miniature, broadband, high output power HBT MMIC balanced doubler with integrated balun. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Girbau, D. and Otegi, N. and Pradell, L. and Lázaro, A. (2005) A MEMS capacitor with improved RF power handling capability. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Florian, C. and Scappaviva, F. and Feudale, M. and Monaco, V.A. and Filicori, F. (2005) A V band singly balanced diode mixer for space application. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Malmkvist, Mikael and Mellberg, Anders and Grahn, Jan (2005) A W-band MMIC amplifier using 70-nm gate length InP HEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Puyal, V. and Konczykowska, A. and Nouet, P. and Bernard, S. and Riet, M. and Jorge, F. and Godin, J. (2005) A broad-band active frequency doubler operating up to 120 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Krishnamurthy, L. and Sun, Q. and Vo, V. T. and Parkinson, G. and Paul, D. K. and Williams, K. and Rezazadeh, A. A. (2005) A comparative study of active and passive GaAs microwave couplers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Camarchia, V. and Donati Guerrieri, S. and Pirola, M. and Teppati, V. and Ghione, G. and Peroni, M. and Lanzieri, C. (2005) A comprehensive class A to B power and load-pull characterization of GaN HEMT son SiC and sapphire substrates. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

de Hek, A.P. and van der Bent, G. and van Wanum, M. and van Vliet, F.E. (2005) A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jeong, Hee-Young and Park, Sang-Keun and Ryu, Nam-Sik and Jeong, Yong-Chae and Yom, In-Bok and Kim, Young (2005) A design of K-band predistortion linearizer using reflective schottky diode for satellite TWTAs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Manan, Vikas and Long, Stephen I. (2005) A dual band (10/16 GHz) p-HEMT VCO. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wanner, Robert and Schäfer, Herbert and Lachner, Rudolf and Olbrich, Gerhard R. and Russer, Peter (2005) A fully integrated SiGe low phase noise push-push VCO for 82 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kärnfelt, Camilla and Kozhuharov, Rumen and Zirath, Herbert (2005) A high purity 60 GHz-band single chip X8 multiplier with low phase noise. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Milosevic, Dusan and van der Tang, Johan and van Roermund, Arthur (2005) A high-efficiency HBT-based class-E power amplifier for 2 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Florian, C. and Cignani, R. and Vannini, G. and Comparini, M.C. (2005) A ku band monolithic power amplifier for TT&C applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bhatnagar, Monica and Morkner, Henrik (2005) A low cost SMT integrated frequency doubler and power amplifier for 30GHz DBS uplink applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Suh, Young-Ho and Richardson, David and Dadello, Anna and Mahon, Simon and Harvey, James T. (2005) A low-cost high performance GaAs MMIC package using air-cavity ceramic quad flat non-leaded package up to 40 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Maas, A.P.M. and van Vliet, F.E. (2005) A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chong, Thomas (2005) A low–noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Peña, R. and Gómez, C. and García, J. A. (2005) A measurement system for FET derivative extraction under dynamic operating regime. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wolf, G. and Demichel, S. and Leblanc, R. and Blache, F. and Lefèvre, R. and Dambrine, G. and Happy, H. (2005) A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

van Raay, F. and Quay, R. and Kiefer, R. and Fehrenbach, W. and Bronner, W. and Kuri, M. and Benkhelifa, F. and Massler, H. and Müller, S. and Mikulla, M. and Schlechtweg, M. and Weimann, G. (2005) A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wu, Pei-Si and Lin, Chin-Shen and Huang, Tian-Wei and Wang, Huei and Wang, Yu-Chi and Wu, Chan-Shin (2005) A millimeter-wave ultra-compact broadband diode mixer using modified marchand balun. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yeh, Mei-Chao and Tsai, Zuo-Min and Wang, Huei (2005) A miniature DC-to-50 GHz CMOS SPDT distributed switch. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

ROUX, P. and BAEYENS, Y. and WOHLGEMUTH, O. and CHEN, Y.K. (2005) A monolithic integrated 180 GHz SiGe HBT Push-Push Oscillator. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Burke, Darren R. and Brazil, Thomas J. (2005) A new non-quasi-static non-linear MOSFET model based on physical analysis. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Horng, T.S. and Huang, C.H. and Han, F.Y. and Li, C.J. (2005) A novel closed-form approach for comparing the Q-factor responses between the asymmetric and symmetric on-chip inductors. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

KASHIWA, T. and OHNISHI, Y. and YAMAMOTO, K. and OHSHIMA, H. (2005) A novel linearizing technique using dual diode based linearizers for lightweight power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Heyen, Johann and Jacob, Arne F. (2005) A novel package approach for multichip modules based on anisotropic conductive adhesives. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Mehdi, M. and Rumelhard, C. and Polleux, J.L. and Lefebvre, B. (2005) A novel technique for obtaining LO and RF (LSB) Rejection in 25-40 GHz microwave up conversion mixers based on the concepts of distributed and double balanced mixing. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Doud, Scarlet M. and Shastry, Prasad N. (2005) A novel wideband MMIC voltage controlled attenuator with a bandpass filter topology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Huber, Meik and von der Mark, Stefan and Boeck, Georg (2005) A power efficient active K band mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Zamanillo, J.M. and Ingelmo, H. and Perez-Vega, C. and Mediavilla, A. (2005) A realistic large-signal microwave PHEMT transistors model for SPICE. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Santarelli, A. and Di Giacomo, V. and Raffo, A. and Traverso, P. A. and Vannini, G. and Filicori, F. and Monaco, V. A. (2005) A simple non-quasi-static non-linear modelof electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lonac, J.A. and Santarelli, A. and Melczarsky, I. and Filicori, F. (2005) A simple technique for measuring the thermal impedance and the thermal resistance of HBTs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Magrini, I. and Camprini, M. and Cidronali, A. and Collodi, G. and Manes, G. (2005) A ultra low-power highly-linear HITD based down-converter for K-band applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Seo, Sanghyun and Pavlidis, Dimitris and Moon, Jeong-Sun (2005) A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bae, Hyun-Cheol and Kim, Sang-Hoon and Song, Young-Joo and Lee, Sang-Heung and Lee, Ja-Yol and Kang, Jin-Young (2005) A wideband fully integrated SiGe BiCMOS medium power amplifier. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bakalski, W. and Vasylyev, Andriy and Simburger, Werner and Kall, Marcus and Schmid, Alfons and Kitlinski, Krzysztof (2005) A4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with On-chip output matching. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Movahhedi, Masoud and Abdipour, A. (2005) Accelerating theTransient Simulation of Semiconductor Devices Using Filter-Bank Transforms. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Marinkovic, Zlatica and Markovic, Vera (2005) Accurate temperature dependent noise models of microwave transistors based on neural networks. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Clausen, M.C. and McMonagle, J. (2005) Advanced manufacturing techniques for next generation power FET technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Holm, M.A. and Brookbanks, D. M. (2005) Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Comparini, M.C. and Di Marcantonio, U. and Feudale, M. and Piloni, V. and Suriani, A. (2005) Advanced multi chip module solutions for RF and digital space applications: status and perspective. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pavlidis, Dimitris and Valizadeh, Pouya and Hsu, S. H. (2005) AlGaN/GaN high electron mobility transistor (HEMT) reliability. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Centurelli, F. and Luzzi, Raimondo and Marietti, Piero and Scotti, Giuseppe and Tommasino, Pasquale and Trifiletti, Alessandro (2005) An active balun for high-CMRR IC design. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kim, Sung Yong and Jang, Mi Ae and Jeon, Ki Kyung and Kim, Young and Jeong, Yong Chae (2005) An analog linearizer using second harmonic signals feedforwarding. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Sayed, Ahmed and Boeck, Georg (2005) An empirical large signal model for silicon carbide MESFETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yun, Wansuk and Govind, Vinu and Dalmia, Sidharth and Sundaram, Venky and Swaminathan, Madhavan and White, George E. (2005) An integrated double balanced mixer on multilayer liquid crystalline polymer (M-LCP) based substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Barnes, A. R. and Boetti, A. and Marchand, L. and Hopkins, J. (2005) An overview of microwave component requirements for future space applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Sen, Padmanava and Srirattana, Nuttapong and Raghavan, Arvind and Laskar, Joy (2005) Analysis of Device Scaling towards the performance enhancement of Si-MOSFET RF amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Takayanagi, H. and Nakano, H. and Horio, K. (2005) Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ing Ng, Geok and Radhakrishnan, K. and Wang, Hong (2005) Are We There Yet ? – A Metamorphic HEMT and HBT Perspective. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

LAPORTE, C. and LAPIERRE, L. and MALLET, A. and ANAKABE, A. (2005) Behaviour of a TWTA with a single or multicarrier input signal for telecommunication applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ferndahl, M. and Motlagh, B.M. and Masud, A. and Angelov, I. and Vickes, H. -O. and Zirath, H. (2005) CMOS devices and circuits for microwave and millimetre wave applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Long, John R. (2005) Can silicon catch the millimeter wave? In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Burke, P.J. and Yu, Z. and Rutherglen, C. (2005) Carbon nanotubes for RF and microwaves. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pacheco, Sergio P. and Zurcher, Peter and Young, Steven R. and Weston, Don and Dauksher, William J. and Auciello, Orlando and Carlisle, John A. and Kane, Neil and Birrell, James P. (2005) Characterization of low-temperature ultrananocrystalline TM diamond RF MEMS resonators. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kim, Yong-Dae and Sunwoo, Kook-Hyun and Choa, Sung-Hoon and Kim, Duck-Hwan and Song, In-Sang and Yook, Jong-Gwan (2005) Characterization of various shaped 5 GHz TFBARs based on 3D full-wave modeling. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chao, Shih-Fong and Tsai, Zuo-Min and Lin, Kun-You and Wang, Huei (2005) Compact W-band SPQT MMIC switch using traveling wave concept. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bessemoulin, A. and Mahon, S. and Dadello, Anna and McCulloch, G. and Harvey, J. (2005) Compact and broadband microstrip power amplifier MMIC with 400-mW output power using0.15-µm GaAs PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raffo, A. and Lonac, J.A. and Menghi, S. and Cignani, R. (2005) Comparison between equivalent-circuit and black-box non-linear models for microwave electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lees, Jonathan and Benedikt, Johannes and Bunz, B. and Gaquiere, Christophe and Ducatteau, D. and Marquez-Segura, E. and Martin-Guerrero, T.M. and Barel, Alain (2005) Comparison of load-pull measurement results of a 4W pHEMT involving five european laboratories. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chee, Joolien and Karru, Ratnakar and Fisher, Timothy S. and Peroulis, Dimitrios (2005) DC – 65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tan, Hiang Teik and Hunter, Ian C. and Snowden, Christopher M. and Ranson, Richard (2005) Design and fabrication of short gate-length heterostructure charge coupled devices for transversal filter applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Convert, Emmanuelle and Beasly, Paul and Mahon, Simon and Dadello, Anna and Harvey, James (2005) Design of broadband, highly integrated, 20-30 GHz and 35-45 GHz MMIC Up-converters. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pérez-Pérez, L. A. and Reynoso-Hernández, J. A. and Loo-Yau, J. R. and Soberanes-Flores, G. and Ascencio-Ramírez, H. and Rangel-Rojo, R. (2005) Detection and mixing of two modulated optical signals using only a single GaAs FET (experimental study). In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

O’Droma, M. and Bertran, E. and Gadringer, M. and Donati, S. and Zhu, A. and Gilabert, P. L. and Portilla, J. (2005) Developments in Predistortion and Feedforward Adaptive Power Amplifier Linearisers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wohlgemuth, O. and Müller, W. and Paschke, P. and Link, T. and Lederer, R. and Kolb, B. and Dotzauer, H. (2005) Digital SiGe-chips for data transmission up to 85 Gbit/s. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Dambrine, G. and Gloria, D. and Scheer, P. and Raynaud, C. and Danneville, F. and Lepilliet, S. and Siligaris, A. and Pailloncy, G. and Martineau, B. and Bouhana, E. and Valentin, R. (2005) Dynamics of electric field screening in photoconductive THz sources with spatially patterned excitation. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Park, Changkun and Yun, Seok-Oh and Han, Jeonghu and Cheon, Sang-Hoon and Park, Jae-Woo and Hong, Songcheol (2005) ESD characteristics of GaAs versus silicon diode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jo, Seong June and Ihn, Soo-Ghang and Kim, Tae-Woo and Yee, Ki-Ju and Hwang, Moon-Seop and Lee, Dong-Han and Song, Jong-In (2005) Electrical and structural properties ofLow-temperature-grown in0.53Ga0.47ason GaAs using an inGaAlAs metamorphic buffer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tripon-Canseliet, C. and Faci, S. and Deshours, F. and Algani, C. and Alquié, G. and Formont, S. and Chazelas, J. (2005) Electromagnetic modeling and characterization of an optically-controlled microwave phase shifterin GaAs integrated technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tan, S. G. and McErlean, E. P. and Hong, J. -S. and Cui, Z. and Wang, L. and Greed, R. B. and Voyce, D. C. (2005) Electromechanical modelling of high power RF-MEMS switches with ohmic contact. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Brueckner, K. and Förster, Ch. and Tonisch, K. and Cimalla, V. and Ambacher, O. and Stephan, R. and Blau, K. and Hein, M. A. (2005) Electromechanical resonances of SiC and AlN beams under ambient conditions. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pekarik, John J. and Coolbaugh, Douglas D. and Cottrell, Peter E. and Csutak, Sebastian M. and Greenberg, David R. and Jagannathan, Basanth and Sanderson, David I. and Wagner, Lawrence and Walko, Joseph and Wang, Xudong and Watts, Josef (2005) Enabling RFCMOS solutions for emergingadvanced applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Taher, H. and Schreurs, D. and Nauwelaers, B. (2005) Extraction of small signal equivalent circuit model parameters for statistical modeling of HBT using artificial neural. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Hegazy, Hazem Mahmoud (2005) RLC Parasitic extraction and circuit model optimization for Cu/SiO2-90nm inductance structures. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Yamanaka, Koji and Iyomasa, Kazuhiro and Ohtsuka, Hiroshi and Nakayama, Masatoshi and Tsuyama, Yoshinori and Kunii, Tetsuo and Kamo, Yoshitaka and Takagi, Tadashi (2005) S and C band Over 100W GaN HEMT 1-chip high power amplifiers with cell division configuration. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ketterl, T. and Weller, T. (2005) SPDT RF MEMS switch using a single bias voltage and based on dual series and shunt capacitive MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jiang, Ningyue and Ma, Zhenqiang and Ma, Pingxi and Reddy, Vijay and Racanelli, Marco (2005) SiGe power HBT design considerations for IEEE 802.11 applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raffo, A. and Santarelli, A. and Traverso, P.A. and Vannini, G. and Filicori, F. (2005) Simplified validation of non-linear models for micro- and millimeter-wave electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Lin, Chien-Cheng and Hsu, Yu-Cheng (2005) Single-chip dual-band WLAN power amplifierusing inGaP/GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Chokshi, Trushal and Peroulis, Dimitrios (2005) Stress-induced failure modes in high-tuning range RF MEMS varactors. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Johansen, T.K. and Krozer, V. and Vidkjær, J. and Djurhuus, T. (2005) Substrate effects in wideband SiGe HBT mixer circuits. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Herzel, Frank and Piz, Maxim (2005) System-level simulation of a noisy phase-locked loop. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Coccetti, F. and Ducarouge, B. and Scheid, E. and Dubuc, D. and Grenier, K. and Plana, R. (2005) Thermal analysis of RF-MEMS switches for power handling front-end. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Khan, A. and Dharmasiri, C. N. and Miura, T. and Rezazadeh, A. A. (2005) Thermal characterisation and analysis of two tone intermodulation distortion in InGaP/GaAs DHBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Angelini, A. and Furno, M. and Cappelluti, F. and Bonani, F. and Pirola, M. and Ghione, G. (2005) Thermal design of power GaN FETs in microstrip and coplanar MMICs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Floriot, D. and Jacquet, J-C. and Chartier, E. and Coupat, J-M. and Eudeline, P. and Auxemery, P. and Blanck, H. (2005) Thermal management of power HBT inpulsed operating mode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Orengo, G. and Colantonio, P. and Serino, A. and Giannini, F. and Ghione, G. and Pirola, M. and Stegmayer, G. (2005) Time-domain neural network characterization for dynamic behavioral models of power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Noh, Y. S. and Yom, I. B. and Park, C. S. (2005) Two-stage adaptive power amplifier MMIC for handset applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wentzel, Andreas and Pienkowski, Dariusz and Boeck, Georg (2005) Ultra high IP3 passive GaAs FET mixers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Masood, Syed M. and Johansen, Tom K. and Vidkjær, Jens and Krozer, Viktor (2005) Uncertainty estimation in SiGe HBT small-signal modeling. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kallfass, I. and Zhang, C. and Grunenputt, J. and Teyssandier, C. and Schumacher, H. (2005) Verification of a frequency dispersion modelin the performance of a GaAs pHEMT travelling-wave MMIC. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Min, Byung-Wook and Rebeiz, Gabriel M. (2005) W-band low-loss wafer-scale package for RFMEMS. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raskin, Jean-Pierre (2005) Wideband characterization and simulation of advanced MOS devices for RF applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Krozer, Viktor and Johansen, Tom K. and Djurhuus, T. and Vidkjær, Jens (2005) Wideband monolithic microwave integrated circuit frequency converters with GaAs mHEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Rochette, Stéphane and Villemazet, Jean-François and Cazaux, Jean-Louis and Populus, Thierry (2005) A highly integrated GaAs MMIC UHF band demodulator with four tunable quadrature phase shift IF channels. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre 2004, Amsterdam.

Bessemoulin, A. and Grunenputt, J. and Fellon, P. and Tessmann, A. and Kohn, E. (2005) Coplanar W-Band Low Noise Amplifier NMIC Using 100-nm Gate-length GaAs PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre 2004, Amsterdam, Amsterdam.

Bessemoulin, A. (2005) Design Data for Hot-via Interconnects in Chip Scale Packaged MMICs up to 110 GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Wohlgemuth, O. and Müller, W. and Link, T. and Lederer, R. and Paschke, P. (2005) 2-1 SiGe PRBS Generator IC up to 86 Gbit/s. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Dearn, Andrew and Richards, Tony and Devlin, L. and Yau, Wing and Wu, Owen (2005) A Universal GaAs HBT PA with Active Bias Circuitry, Covering 4.9-6 GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Massaro, A. and Pierantoni, L. and Ciandrini, C. and Rozzi, T. (2005) Analysis of Sensitivity for Low-Pass Multilayer Optical Filters. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Nuttinck, S. and Mukhopadhyay, R. and Loper, C. and Singhal, S. and Harris, M. and Laskar, J. (2005) Direct On-Wafer Non-Invasive Thermal Monitoring of AlGaN/GaN Power HFETs Under Microwave Large Signal Conditions. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Ponchak, George E. and Schwartz, Zachary D. and Alterovitz, Samuel A. and Downey, Alan N. (2005) Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Masuda, Satoshi and Kira, Hidehiko and Hirose, Tatsuya (2004) 110-GHz High-gain Flip-chip InP HEMT Amplifier with Resin Encapsulation on an Organic Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Choi, Sunkyu and Kim, Taeho and Lee, Bangkeun and Yang, Kyounghoon (2004) 5-GHz VCO with a wide tuning range using an InPbased RTD/HBT technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Moran, D.A.J. and Boyd, E. and Elgaid, K. and McLelland, H. and Stanley, C.R. and Thayne, I.G. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using a non-annealed ohmic contact process. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bessemoulin, A. and Parisot, M. and Quentin, P. and Saboureau, C. and Van Heijningen, M. and Priday, J. (2004) A 1-Watt Ku-band Power Amplifier MMIC using Cost-effective Organic SMD Package. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tempel, Mike and Huber, Meik and Boeck, Georg (2004) A 2 GHz Fully Balanced Switching HBT Mixer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chang, Hong-Yeh and Wang, Huei and Wang, Yu-Chi and Chao, P. C. and Chen, Chung-Hsu (2004) A 22-GHz Ultra Low Phase Noise Push-Push Dielectric Resonator Oscillator Using MMICs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wu, Tzung-Han and Meng, Chinchun and Wu, Tse-Hung and Huang, Guo-Wei (2004) A 5.7 GHz 0.35 m SiGe HBT Upconversion Micromixer with a Matched Single-ended Passive Current Combiner Output. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sen, P. and Park, H. -M. and Mukhopadhyay, R. and Srirattana, N. and Raghavan, A. and Laskar, J. and Cressler, J. D. and Freeman, G. (2004) A Broadband, Small-Signal SiGe HBT Model for Millimeter-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Nam, Joongjin and Kim, Youngwoong and Shin, Jin-Ho and Kim, Bumman (2004) A CDMA and AMPS Handset Power Amplifier based on Load Modulation Technique. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Darfeuille, Sébastien and Barelaud, Bruno and Billonnet, L. and Jarry, Bernard and Marie, Hervé and De La Torre, Alain and Nguyen Trieu, Luan Le and Gamand, Patrice (2004) A Differential-Based Single-Ended 2 GHz Low-Noise Recursive Filter on Silicon. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Dong Ho and Ko, Sangsoo and Jeon, Sang-Hoon and Park, Jae-Woo and Hong, Songcheol (2004) A Distributed Model of Four-Port Monolithic Transformer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Meng, Chinchun and Wu, Tzung-Han and Wu, Tse-Hung and Huang, Guo-Wei (2004) A Fully Integrated 5.2 GHz Double Quadrature Image Rejection Gilbert Downconverter Using 0.35 µm SiGe HBT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Meliani, Chafik and Rudolph, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang (2004) A GaAs-HBT Broadband Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmission. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chang, S.W. and Chang, E. Y. and Chen, K.S and Hsieh, T. L. and Tseng, C. W. (2004) A Gold Free Fully Copper Metallized InGaP/GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Gómez, C. and García, José A. and Mediavilla, A. and Tazón., A. (2004) A High Efficiency Rectenna Element using E-pHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chow, Yut-Hoong and Chong, Thomas (2004) A High Performance 2.4GHz Linear Power Amplifier in Enhancement-mode GaAs pHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Phan, Khanhtran and Morkner, Henrik (2004) A High Performance Yet Easy to Use Low Noise Amplifier in SMT Package for 6 to 20 GHz Low Cost Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Johansen, Tom K. and Vidkjær, Jens and Krozer, Viktor (2004) A Highly Integrated GaAs pHEMT Active Mixer for Wideband SAR Systems. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Kyung Ai and Lee, Dong Ho and Park, Hyun-Min and Cheon, Sang-Hoon and Park, Jae-Woo and Yoo, Hyung-mo and Hong, Songcheol (2004) A InGaP/GaAs HBT WLAN Power Amplifier with Power Detector. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sim, Sang-Hoon and Ko, Sangsoo and Hong, Songcheol (2004) A K-Band Push-Push VCO MMIC using embedded frequency doubling mechanism. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Giannini, F. and Limiti, E. and Serino, A. and Dainelli, V. (2004) A Medium-Power Low-Noise Amplifier For X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Colantonio, P. and Giannini, F. and Limiti, E. and Marrocco, G. (2004) A Method for PA-Patch Antenna Design Optimisation Oriented to Maximum Efficiency. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Raghavan, Anand and Jalan, Umesh and Chakraborty, Sudipto and Lee, Chang-Ho and Laskar, Joy and Chen, Emery and Lee, JongSoo and Cressler, J. D. and Freeman, Greg and Joseph, Alvin (2004) A Millimeter-Wave Linear Low Noise Amplifier in SiGe HBT Technology with Substrate Parasitic Model. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tsai, Ming-Da and Wang, Huei and Kuan, Jui-Feng and Chao, Chih-Ping (2004) A Miniature 4.3-7-GHz, 1-V CMOS LNA with Helical Inductors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lin, Chin-Shen and Tsai, Ming-Da and Wang, Huei and Wang, Yu-Chi and Chen, Chung-Hsu (2004) A Monolithic HBT Broadband Amplifier Using Modified Triple Darlington Configuration. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre, Amsterdam.

Fujii, Kohei and Morkner, Henrik and Brown, Edward (2004) A Novel Low Cost Enhancement Mode Power Amplifier MMIC in SMT Package for 7 to 18 GHz Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kallfass, I. and Schick, C. and Schumacher, H. and Brazil, T. (2004) A Universal Large-Signal Model for Hetero Field Effect Transistors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Issaoun, A. and Kouki, A. B. and Ghannouchi, F. M. (2004) A User Compiled Large Signal Model for GaAs Heterojunction Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Isacsson, Magnus and Johansson, Stefan and Ståhl, Johan and Thiesies, Heiko and Lingsten, Johan and Tengs, Audun (2004) A Wide Band Receiver Module. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Zirath, Herbert and Kozhuharov, Rumen and Ferndahl, M. (2004) A balanced InGaP-GaAs Colpitt-VCO MMIC with ultra-low phase noise. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cappelluti, F. and Pirola, M. and Ghione, G. (2004) A measurement-based distributed large-signal E/O circuit model for high-speed electroabsorption modulators. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Darcel, L. and Duême, P. and Funck, R. and Alquié, G. (2004) A new Methodology for achieving MMIC Bandpass Active Filters at High Frequencies. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chartier, E. and Piotrowicz, S. and Jacquet, J.C. and Floriot, D. (2004) Accurate Characterization of S-Band HBT Power Amplifier using simultaneously S parameters and Load-Pull Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

PRIGENT, M. and NALLATAMBY, J.C. and QUERE, R. (2004) Advanced Phase noise modeling techniques of nonlinear microwave devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre 2004, Amsterdam.

Klumperink, Eric A.M. and Bruccoleri, Federico and Stroet, Peter and Nauta, Bram (2004) Amplifiers Exploiting Thermal Noise Canceling: A Review. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Smith, P. and Thayne, I.G. (2004) An Array-Based Design Methodology for 10 GHz SiGe LC Oscillators. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Elgaid, K. and McLelland, H. and Ferguson, S. and Cao, Xin and Boyd, E. and Moran, D. and Thoms, S. and Zhou, H. and Wilkinson, C.D.W. and Stanley, C.R. and Thayne, I. G. (2004) An Array-Based Design Methodology for the Realisation of 94GHz MMMIC Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lefebvre, B. and Bessemoulin, A. and Schwoerer, C. and Lehoue, V. and Vaudescal, O. (2004) An Highly Integrated Double Conversion Mixer MMIC for Ka-band VSAT Communication Systems. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Millet, O. and Bertrand, P. and Legrand, B. and Collard, D. and Buchaillot, L. (2004) An Original Methodology to Assess Fatigue Behavior in RF MEMS Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sayed, Ahmed and von der Mark, Stefan and Boeck, Georg (2004) An Ultra Wideband 5 W Power Amplifier Using SiC MESFETs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Horio, K. and Yonemoto, K. (2004) Analysis of Drain Lag and Power Compression in GaN MESFET. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Dharmasiri, C. N. and Vo, V. T. and Koon, K. A. and Rezazadeh, A. A. (2004) Analysis of Temperature Dependence of GaAs DHBT Terminal Resistances Using the Observed Kink Effect. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Parvais, B. and Raskin, J.P. (2004) Analytical Expressions for Distortion of SOI MOSFETs using the Volterra Series 3D. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Jacquet, J-C and Aubry, R. and Gérard, H. and Delos, E. and Rolland, N. and Cordier, Y. and Bussutil, A. and Rousseau, M. and Delage, S. L. (2004) Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Heyen, Johann and Jacob, Arne F. (2004) Anisotropic Conductive Adhesives for Millimeterwave Flipchip Interconnections. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Winkler, Wolfgang and Heinemann, Bernd and Knoll, Dieter (2004) Application of SiGe:C BiCMOS to Wireless and Radar. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Khuchua, N. and Chakhnakia, Z. and Kobrava, N. and Melkadze, R. and Lezhneva, T. and Sakharova, T. and Tigishvili, M. and Tutunjan, A. and Tutunjan, N. and Diehl, R. and Tsenes, P. and Hatzopoulos, Z. (2004) Availability of Enabling Technologies for GaAs-Based Specific Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Galloo, J.S. and Roelens, Y. and Bollaert, S. and Pichonat, E. and Wallart, X. and Cappy, A. and Mateos, J. (2004) Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hadley, Peter (2004) Bottom-up Nanoelectronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Florian, C. and Pirazzini, M. and Vannini, G. and Santarelli, A. and Borgarino, M. and Angelone, C. and Paparo, M. and Filicori, F. (2004) C Band DROs Using Microwave Bipolar Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Soubercaze-Pun, G. and Tartarin, J.G. and Bary, L. and Delage, S. L. and Plana, R. and Graffeuil, J. (2004) Carrier’s transport mechanisms investigations in AlGaN/GaN HEMT thanks to physical modelling and low frequency noise measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hakala, Ilkka and Gharavi, Leila and Kaunisto, Risto (2004) Chireix Power Combining with Saturated Class-B Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mijalkovic, S. and Burghartz, J.N. (2004) Compact Modelling of SiGe HBTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Denis, David and Hunter, Ian and Snowden, Christopher M. (2004) Comprehensive Characterization and Modelling of Micro-wave Power HEMTs for Large-Signal Power Amplifier Design. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Johansen, Tom K. and Vidkjær, Jens and Krozer, Viktor (2004) Consistent Large-Signal Modeling of SiGe HBT Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tabata, H. and Matsui, H. and Saeki, H. and Masuda, S. (2004) Construction of ZnO devices : electric and magnetic properties. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Rennane, A. and Bary, L. and Graffeuil, J. and Plana, R. (2004) DC and Low Frequency Noise Characteristics of SiGe n-MODFET’s. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lamesa, Alessandro and Giolo1, Giancarlo and Limiti, Ernesto (2004) Design Procedure and Performance of two 0.5-20 GHz GaAs PHEMT MMIC Matrix Distributed Amplifier for EW Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kohn, E. and Kubovic, M. and Hernandez-Guillen, F. and Denisenko, A. (2004) Diamond for High Power / High Temperature Electronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lisec, T. and Huth, C. and Wagner, B. (2004) Dielectric Material Impact on Capacitive RF MEMS Reliability. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Krämer, M.C.J.C.M. and Hoskens, R.C.P. and Jacobs, B. and Kwaspen, J.J.M. and Suijker, E.M. and de Hek, A.P. and Karouta, F. and Kaufmann, L.M.F. (2004) Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Giannini, F. and Colantonio, P. and Orengo, G. and Serino, A. (2004) Distortion Characterization and Neural Network Modeling for Microwave Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Milivojevic, B. and Hoffmann, S. and Thiede, A. and Noé, R. and Leblanc, R. and Wroblewsk, B. (2004) Distributed Amplifiers for Transmitter and Receiver of a 40 Gbit/s DPSK Optical Transmission System. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Rottenberg, X. and Nauwelaers, B. and De Raedt, W. and Tilmans, H. A. C. (2004) Distributed dielectric charging and its impact on RF MEMS devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Pennington, D. C. and Hopper, R and Reeves, R. M. (2004) Evolution of Transceiver Design from Radar to Imaging. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Touhami, R. and Yagoub, M.C.E. and Baudrand, H. (2004) Extraction Of The Series-Resistance Of Au-Oxide-n- InP Structures. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Boyd, E. and Cao, Xin and Thoms, S. and Moran, D.A.J. and Eglaid, K. and Holland, M. and Stanley, C.R. and Thayne, I. G. (2004) Fabrication of Very High Performance 50nm T-gate metamorphic GaAs HEMTs with exceptional uniformity. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Seidel, Robert V. and Graham, Andrew P. and Duesberg, Georg S. and Liebau, Maik and Unger, Eugen and Kreupl, Franz and Hoenlein, Wolfgang (2004) Faster and Smaller with Carbon Nanotubes? In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kärnfelt, C. and Zirath, H. and Starski, J. P. and Rudnicki, J. (2004) Flip Chip Assembly of a 40-60 GHz GaAs Microstrip Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Würfl, Joachim and Schlechtweg, Michael (2004) Frontiers of III-V Compounds and Devices 0,1. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sassi, Zoheir and Barelaud, Bruno and Billonnet, L. and Jarry, Bernard and Marie, Hervé and De La Torre, Alain and Nguyen Trieu, Luan Le and Gamand, Patrice (2004) Fully Differential 2 GHz 2.7V 4th-Order Low-Noise Active Bandpass Filter on Silicon. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Zayachuk, Dmytro and Strukhlyak, Natalia and Krukovsky, Semen and Goovaerts, Etienne and Polyhach, Yevhen (2004) GaAs thin films grown by LPE under influence of Yb impurity. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Pavlidis, Dimitris (2004) GaN THz Electronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Saunier, Paul (2004) GaN Technology Overview: Accomplishments and Challenges. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hollreiser, Martin (2004) Galileo Receivers - Challenges and Performance. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kim, Hong-Teuk and Lee, Ki-Hong and Choi, Hyung-Kyu and Choi, Ji-Youn and Lee, Kyung-Hak and Kim, Jin-Pil and Ryu, Gi-Hyon and Jeon, Yong-Joon and Han, Choong-Soo and Kim, Keechul and Lee, Kyungho (2004) High Efficiency and Linear Dual Chain Power Amplifier without/with Automatic Bias Current Control for CDMA Handset Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Llopis, O. (2004) High Frequency and Low Frequency Noise in Microwave Oscillators. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Colantonio, P. and Angel Garcia, Josè and Giannini, Franco and Limiti, Ernesto and Malaver, Emigdio and Carlos Pedro, Josè (2004) High Linearity and Efficiency Microwave PAs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kim, Dae-Hyun and Noh, Hun-Hee and Yeon, Seong-Jin and Lee, Jae-Hak and Seo, Kwang-Seok (2004) High fT 30nm In0.7GaAs HEMT’s Beyond Lithography Limitations. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Leung, Lydia L. W. and Zhang, Jinwen and Hon, Wai Cheong and Chen, Kevin J. (2004) High-Performance CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides on Low- Resistivity Silicon Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cojocari, O. and Biber, S. and Mottet, B. and Sydlo, C. and Hartnagel, H.-L. and Schmidt, L.-P. (2004) IF-noise improvement of the GaAs Schottky diodes for THz-frequency mixer applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Camprini, M. and Cidronali, A. and Accillaro, C. and Magrini, I. and Loglio, G. and Collodi, G. and Jargon, J. and Manes, G. (2004) Identification of a Strongly Nonlinear Device Compact Model Based on Vectorial Large Signal Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Ziroff, A. and Nalezinski, M. and Menzel, W. (2004) Improved Performance of Flip Chip assembled MMIC Amplifiers on LTCC using a Photonic Bandgap Structure. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kimura, Koichi and Seki, Masato and Matsumura, Nobuhisa and Honjo, Kazuhiko (2004) Improvement in ACLR Asymmetry forW-CDMA InGaP/GaAs HBT Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre.

Malyshev, Sergei and Chizh, A. and Andrievski, Vatslav (2004) InGaAs p-i-n Photodiodes for Microwave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Maneux, C. and Belhaj, M. and Labat, N. and Touboul, A. and Riet, M. and Kahn, M. and Godin, J. and Bove, Ph. (2004) InP/GaAsSb/InP DHBT: Analysis of specific material parameters and high current effect by physical simulation. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cremonini, A. and Carbonaro, L. and Mariotti, S. and Natale, V. and Nesti, R. and Orfei, S. and Roda, J. and Tofani, G. (2004) Indium Phosphide MMIC Low Noise Amplifier and related cryogenically applications in a Radioastronomical Focal Plane Array Receiver. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Ducatteau, D. and Werquin, M. and Gaquière, C. and Théron, D. and Martin, T. and Delos, E. and Grimbert, B. and Morvan, E. and Caillas, N. and Hoël, V. and De Jaeger, J.C. and Delage, S. L. (2004) Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mellberg, Anders and Malmkvist, Mikael and Grahn, Jan and Rorsman, Niklas and Zirath, Herbert (2004) Integration of components in a 50 nm InGaAs- InAlAs-InP HEMT process with pseudomorphic In0.65Ga0.35As channel. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Rudolph, M. and Schnieder, F. and Heinrich, W. (2004) Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Winkler, Wolfgang and Borngräber, Johannes (2004) LC-Oscillator for 94 GHz Automotive Radar System Fabricated in SiGe:C BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Teyssier, Jean-Pierre and Barataud, D. and Charbonniaud, C. and De Groote, Fabien and Mayer, Markus and Nébus, Jean-Michel and Quéré, Raymond (2004) Large Signal Characterization of Microwave Power Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tkachenko, Y. and Boerman, S. and Chung, H-C. and DiCarlo, P. and Gerard, M. and Gering, J. and Hu, J. and Klimashov, A. and Kwok, K. and Reginella, P. and Sprinkle, S. and Wei, C. and Yang, Y. (2004) Large-Signal Nonlinear Model of a Highly Integrated Quad-Band GSM Transmit Front-End Module. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

O’Droma, M. S. and Portilla, J. and Bertran, E. and Donati, S. and Brazil, T. and Rupp, M. and Quay, R. (2004) Linearisation Issues in Microwave Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mahmoudi, R. and Milosevic, D. and van der Tang, J.D. and Hegt, J. A. and van Roermund, A. H. M. (2004) Linearized Switching Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kärkkäinen, Mikko and Varonen, Mikko and Kantanen, Mikko and Karttaavi, Timo and Kangaslahti, Pekka and Halonen, Kari (2004) Low Noise Amplifiers for 94 GHz Cloud Radar. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Risacher, Christophe and Sundin, Erik and Robles, Victor Perez and Pantaleev, Miroslav and Belitsky, Victor (2004) Low Noise and Low Power Consumption Cryogenic Amplifiers for Onsala and Apex Telescopes. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

SION, A. and CORTESE, P. and GOURDON, C. and CAMIADE, M. and NALLATAMBY, J.C. and PRIGENT, M. and OBREGON, J. (2004) Low Phase Noise 2 GHz HBT Push-Push VCO Based on an Advanced Low Frequency Noise Model. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Romanò, Luca and Minerva, Vito and Cavalieri d’Oro, Silvia and Politi, Marco and Samori, Carlo and Pagani, Maurizio (2004) Low Phase Noise, Very Wide Band SiGe Fully Integrated VCO. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Krotkus, A. and Bertulis, K. and Adomavicius, R. (2004) Low temperature MBE grown GaAs for terahertz radiation applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Shirokov, Mikhail S. and Gray, Eric S. and Little, Duncan A. and Hau, Gary and James, A. and Roche, Jr. (2004) Low-Cost Wide-Range Low-Current Consumption Linear HBT MMIC Power Amplifier for Portable 2.4GHz WLAN Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Witvers, R.H. and Bij de Vaate, J.G. and Sarmasanu, A. (2004) MMIC GaAs and InP Very Low Noise Amplifier Designs for the Next Generation Radio Telescopes. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre, Amsterdam.

Meazza, Andrea and Pagani, Maurizio and Iommi, Roberto and Macchiarella, Giuseppe (2004) MMIC implementation of a new active pre-distortion scheme for Highly Linear Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Gough, R. and Archer, J. and Roberts, P. and Moorey, G. and Graves, G. and Bowen, M. and Kanoniuk, H. (2004) MMICs for the Australia Telescope Millimetre-Wave Receiver System. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Clifton, J. C. and Albasha, L. and Lawrenson, A. and Eaton, A. (2004) Meeting the Needs of Cellular Dual-Mode (EGPRS/3G) Power Amplifiers with a Unique J-PHEMT Process and Novel Control Architecture. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Dubuc, D. and Van Spengen, Merlijn and Melle, Samuel and De Wolf, Ingrid and Mertens, Robert and Pons, Patrick and Grenier, Katia and Plana, Robert (2004) Methodology to assess the reliability behavior of RF-MEMS. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mertens, R.P. and De Raedt, W. and Carchon, G. and Tilmans, H.A.C. and Germain, M. (2004) Microwave applications of advanced semiconductor technologies. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Galière, J. and Valard, J.L. and Estèbe, E. (2004) Millimetre-wave MMIC packaging compatible with surface-mount technology (SMT). In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kaper, Val and Thompson, Richard and Prunty, Tom and Shealy, James R. (2004) Monolithic AlGaN/GaN HEMT SPDT switch. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cazaux, Jean-Louis and Cayrou, Jean-Christophe and Miquel, Christine and Debarge, Cécile and George, Sébastien and Barbaste, Régis and Bodereau, F. and Chabbert, Philippe and Maynard, Jean (2004) New Generation of Ka-Band Equipment for Telecommunication Satellites. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Siligaris, Alexandre and Dambrine, G. and Danneville, F. (2004) Non-Linear Modeling of the Kink Effect in Deep Sub-micron SOI MOSFET. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Taher, H. and Schreurs, D. and Vestiel, E. and Gillon, R. and Nauwelaers, B. (2004) Nonlinear Modeling of Si/SiGe HBT Using ANN. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Alabadelah, Ahmed and Fernandez, T. and Mediavilla, Angel and Nauwelaers, Bart and Santarelli, Alberto and Schreurs, Dominique and Tazón, Antonio and Traverso, Pier Andrea (2004) Nonlinear Models of Microwave Power Devices and Circuits. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chang, Christophe and Sommet, Raphael and Quéré, Raymond and Dueme, Ph. (2004) Nonlinear thermal reduced model for Microwave Circuit Analysis. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Van Heijningen, M. and Priday, J. (2004) Novel Organic SMD Package for High-Power Millimeter Wave MMICs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lonac, J. A. and Santarelli, A. and Paganelli, R. and Filicori, F. (2004) Numerically Efficient Design of Highly Linear Microwave Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Loglio, G. and Cidronali, A. and Accillaro, C. and Usai, M. and Magrini, I. and Camprini, M. and Collodi, G. and Manes, G. (2004) On the experimental calculation of the conversion matrix for sub-harmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

van Vliet, F.E. and de Boer, A. (2004) On the stability of MMIC’s using transistors with inductive source feedback. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Coromina, F. and Deborgies, F. and Emma, F. and Gatti, G. (2004) On-board Applications of Active Microwave Technologies to GALILEO and other European Space Programs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Matiss, A. and Janssen, G. and Bertenburg, R. M. and Brockerhoff, W. and Tegude, F.J. (2004) Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Nosal, Zbigniew M. (2004) Performance Analysis of Transimpedance Amplifiers in Various Technologies. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Werquin, M. and Vellas, N. and Guhel, Y. and Ducatteau, D. and Boudart, B. and Pesant, J.C. and Bougrioua, Z. and Germain, M. and De Jaeger, J.C. and Gaquière, C. (2004) Performances of AlGaN/GaN HEMTs in Planar Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Elkhou, M. and Rousseau, M. and Gerard, H. and De Jaeger, J.C. (2004) Physical analysis of the breakdown phenomenon between sigle or double step gate recess HEMTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Conte, G. and Donati Guerrieri, S. and Bonani, F. and Ghione, G. (2004) Physics-Based Low-Frequency Noise Modelling in Small- and Large-Signal RF Device Operation. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Charbonniaud, C. and Gasseling, T. and De Meyer, S. and Quéré, R. and Teyssier, J.P. and Barataud, D. and Nébus, J.M and Martin, T. and Grimbert, B. and Hoel, V. and Caillas, N. and Morvan, E. (2004) Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Papaioannou, G. J. and Theonas, V. and Exarchos, M. and Konstantinidis, G. (2004) RF MEMS Sensitivity to Radiations. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Minko, A. and Hoel, V. and Dambrine, G. and Gaquiere, C. and Dejaeger, J-C and Cordier, Y. and Semond, F. and Natali, F. and Massies, J. and Lahreche, H. and Wedzikowski, L. and Langer, R. and Bove, P. (2004) RF Noise and Power Performances of AlGaN/GaN on Si(111) Substrates making of low cost modules. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Théron, D. and Gaquière, C. and De Jaeger, J.C. and Delage, S. L. (2004) Recent Developments and Trends in GaN HFETs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Krausse, D. and Quay, R. and Tessmann, A. and Massler, H. and Leuther, A. and Merkle, T. and M uller, S. and Schw orer, C. and Mikulla, M. and Schlechtweg, M. and Weimann, G. (2004) Robust GaN HEMT Low-Noise Amplifier MMICs for X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Borges, A. and SMOS-PLM, Team (2004) SMOS Mission & MIRAS Instrument. Synthetic Apperture Radiometer in Space. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Borgarino, M. and Bogoni, A. and Fantini, F. and Peroni, M. and Cetronio, A. (2004) Semi-Automated Experimental Set-Up for CAD-oriented Low Frequency Noise Modeling of Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Palmour, J.W. and Milligan, J.W. and Henning, J. and Allen, S.T. and Ward, A. and Parikh, P. and Smith, R.P. and Saxler, A. and Moore, M. and Wu, Y. (2004) SiC and GaN Based Transistor and Circuit Advances. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Vaucher, Cicero S. and Apostolidou, M. and Farrugia, Andrew and Praamsma, Louis (2004) SiGe Building Blocks for Microwave Frequency Synthesizers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Larson, Lawrence E. (2004) SiGe HBT BiCMOS Technology as an Enabler for Next Generation Communications Systems. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Magnee, P. H. C. and Hurkx, G. A. M. and Agarwal, P. and van Noort, W. D. and Donkers, J. J. T. M. and Melai, J. and Aksen, E. and Vanhoucke, T. and Vijayaraghavan, M. N. (2004) SiGe:C HBT technology for advanced BiCMOS processes. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bonani, F. and Donati Guerrieri, S. and Ghione, G. (2004) Simulation of Large-Signal Cyclostationary Noise in Microwave Devices: from Physics-Based to Compact Modelling Approaches. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Anwar, Asif and Entwistle, Stephen and Taylor, Chris (2004) Strategy Analytics Insight Current Status & Future Prospects for GaAs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Moon-Que and Moon, Seong-Mo and Ryu, Keun-Kwan and Jang, Dong-Phil and Yom, In-Bok (2004) Subharmonically Pumped Image Rejection Mixer for K-band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wichmann, N. and Duszynski, I. and Parenty, T. and Bollaert, S. and Mateos, J. and Wallart, X. and Cappy, A. (2004) Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wei, C. J. and Gering, J. and Tkachenko, Y. (2004) Table-Based Dynamic PHEMT Model Using Delayed Capacitive Currents. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre 2004, Amsterdam.

Bolognesi, C.R. and Liu, H.G. and Watkins, S.P. (2004) The Fabrication and Characterization of High- Performance InP DHBTs (Invited). In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wu, L. and Tao, R. and Basaran, U. and Luger, J. and Dettmann, I. and Berroth, M. (2004) The Integrated 2W High Voltage/High Power 0.12-µm RF CMOS Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Accillaro, C. and Cidronali, A. and Zani, F. and Loglio, G. and Usai, M. and Collodi, G. and Camprini, M. and Magrini, I. and Manes, G. (2004) Thermal Memory Effects on the Linearity of a GaAs PHEMT. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bird, Neil. C. and Sanduleanu, Mihai A.T. (2004) Towards Integrated Transceivers in mm-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Le Gallou, N. and Villemazet, J.F. and Cogo, B. and Cazaux, Jean-Louis and Mallet, A. and Lapierre, L. (2003) 10 W High Efficiency 14V HBT Power Amplifier for Space Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gu, Zheng and Thiede, Andreas and Möller, Lothar (2003) 20 Gbit/s Decision Feedback Loop for Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lefebvre, B. and Bessemoulin, A. (2003) 35-45 GHz Image Rejection Star Mixer for Up-and Down Conversion. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Werthof, Andreas (2003) 36-44 GHz HPAfor High Linearity Radio Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Centurelli, F. and Golfarelli, Alessandro and Guinea, Jesus and Masini, Leonardo and Morigi, Damiana and Pozzoni, Massimo and Scotti, Giuseppe and Trifiletti, Alessandro (2003) A 10 Gb/s CMU in SiGe BiCMOS commercial technology with multistandard capability. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bao, Mingquan and Li, Yinggang and Cathelin, Andreia (2003) A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tsenes, Petros and Uzunoglu, Nikolaos (2003) A 4-bit 7.5 GHz A/D Converter. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lee, Sang-Heung and Lee, Ja-Yol and Lee, Seung-Yun and Park, Chan Woo and Kim, Sang Hoon and Bae, Hyun-Chul and Kang, Jin-Yeong and Cho, Kyoung Ik (2003) A 5.8 GHz Mixer using SiGe HBT Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ueda, Hiro-omi and Shinjo, Shintaro and Nabeno, Yasuhiro and Ono, Masayoshi and Ohnakado, Takahiro and Murakami, Takaaki and Furukawa, Akihiko and Hashizume, Yasushi and Nishikawa, Kazuyasu and Mori, Takeshi and Yamakawa, Satoshi and Oomori, Tatsuo and Suematsu, Noriharu (2003) A 5GHz-Band On-Chip Matching CMOS MMIC Front-End. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Collins, Thomas E. and Betti-Berutto, A. and Long, Stephen I. (2003) A 75 GHz Current Mode Logic Static Frequency Divider Realized in a Commercially Available InP Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Butterworth, Peter and Charbonniaud, C. and Campovecchio, M. and Nallatamby, Jean-Christophe and Monnier, Marc and Lajugie, Monique (2003) A Balanced Sub-Harmonic Cold FET Mixer for 40GHz Communication Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bessemoulin, A. and Gaessler, C. and Marschall, P. and Quentin, P. (2003) A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

De Dominicis, M. and Giannini, F. and Scucchia, L. (2003) A Dual-Band MMIC Low frequency 180 ° Hybrid. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Acciari, G. and Colantonio, P. and De Dominicis, M. and Rossi, M. (2003) A Fast AM/AM and AM/PM Characterization Technique. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ó hAnnaidh, Breandán and Brazil, Thomas J. (2003) A Globally-Continuous, Charge-Conservative, Non-linear Equivalent Circuit Model For RF MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Camprini, M. and Magrini, Iacopo and Collodi, G. and Cidronali, A. and Nair, Vijay and Manes, Gianfranco (2003) A Hybrid Self-Oscillating Mixer Based on InP Heterojunction Interband Tunnel HEMT for Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tsai, Ming-Da and Liu, Ren-Chieh and Lin, Chin-Shen and Wang, Huei (2003) A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier InGaP. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kim, Moonjung and Cha, Jung-Ho and Shin, Seong-Ho and Jeon, Soo-Kun and Kim, Jaeho and Kwon, Young-Se (2003) A Monolithically Integrated InP-Based HBT and p-i-n Photodiode Using New Stack-Shared Layer Scheme. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Iommi, Roberto and Macchiarella, Giuseppe and Meazza, Andrea and Pagani, Maurizio (2003) A New Active Predistortion Linearizer Suitable for MMIC Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Fujimoto, Shinichi and Shuto, Hiroaki and Matsuura, Mitsuhiro and Yamamoto, Kazuya and Ishikawa, Takahide and Komaru, Makio and Matsuda, Yoshio (2003) A New Methodology to Enable Parameterized Cell Transfer between Microwave CADs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Hamed, Karim W. and Freundorfer, Alois P. and Antar, Yahia M.M. (2003) A Novel 20 to 40 GHz Monolithic InGaP/GaAs HBT Double Balanced Mixer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cidronali, A. and Collodi, G. and Accillaro, C. and Toccafondi, C. and Vannini, G. and Santarelli, A. and Manes, G. (2003) A Scalable PHEMT Model Taking Into Account Electromagnetic and Electro-Thermal Effects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kallfass, I. and Gruson, F. and Abele, P. and Michelakis, K. and Hackbarth, T. and Hieber, K.-H. and Müller, J. and Schumacher, H. (2003) A SiGe HEMT Mixer IC with Low Conversion Loss. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Wong, J. N. H. and Aitchison, C. S. (2003) A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Santarelli, Alberto and Paganelli, Rudi Paolo and Costantini, A. and Vannini, Giorgio and Filicori, Fabio (2003) A Simplified Approach for Quasi-linear Power Amplifier Distortion Evaluation. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Masud, Anowar and Ferndahl, M. and Zirath, Herbert (2003) A Variable gain MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Morigi, Damiana and Masini, Leonardo and Pozzoni, Massimo (2003) A Wideband Low Voltage Low Phase Noise 10-GHz SiGe Switchable VCO. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bertazzi, F. and Cappelluti, F. and Bonani, F. and Goano, M. and Ghione, G. (2003) A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

De Dominicis, M. and Giannini, F. and Limiti, E. and Serino, E. (2003) A novel noise model extraction technique for microwave and millimeter wave HEMT. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Massaro, A. and Mancini, V. and Di Donato, A. and Rozzi, T. (2003) Accurate Analysis of Polarization Coupling in Laminated Multilayered Thin Film Optical 3-D Waveguides. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Thayne, Iain and Boyd, E. and Cao, Xin and Elgaid, K. and Holland, Martin and McLelland, Helen and McEwan, Fiona and Macintyre, Douglas and Moran, David and Stanley, Colin and Thoms, Stephen (2003) Advanced III-V HEMT MMIC Technologies for Millimetre-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Piloto, Andrew J. and Yamada, Reiichi and Burgess, Jerry and Hall, Rick (2003) Advancement in T/R Module Interconnects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mokerov, V.G. and Velikovskii, L.E. and Kanametova, Z.T. and Kaminskii, V.E. and Sazonov, P.V. and Graul, J. and Semchinova, O. (2003) AlGaN/GaN-heterojunction FET with inverted 2DEG Channel. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Adahl, Andreas and Zirath, Herbert (2003) An 1 GHz Class E LDMOS Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gao, Jianjun and Li, Xiuping and Yang, Hong and Boeck, Georg (2003) An Approach to Determine and for InP HBT Using Cutoff Mode Measurement. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Loo-Yau, J.R. and Zúñiga-Juárez, J.E. and Hirata-Flores, F.I. and Reynoso-Hernández, J.A. (2003) An Improved GaAs FET Nonlinear Model Suitable for Intermodulation Analysis of Amplifiers,Switches and Resistive Mixers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Shouxian, Mou and Jianguo, Ma and Seng, Yeo Kiat and Anh, Do Manh (2003) An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cabral, Pedro Miguel and Borges Carvalho, Nuno and Pedro, José Carlos (2003) An Integrated View of Nonlinear Distortion Phenomena in Various Power Amplifier Technologies. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Viallon, Christophe and Tournier, Eric and Graffeuil, Jacques and Parra, Thierry (2003) An Original SiGe Active Differential Output Power Splitter for Millimetre-wave Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Polleux, J.L. and Moutier, F. and Billabert, A.L. and Rumelhard, C. and Sönmez, E. and Schumacher, H. (2003) An SiGe/Si Heterojunction Phototransistor for Opto-Microwave Applications:Modeling and first Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Dambrine, G. and Parenty, Thierry and Bollaert, S. and Happy, Henri and Cappy, A. and Mateos, Javier and Nahri, Tapani and Orlhac, Jean Claude and Trier, Marc and Baudet, Pierre and Landry, Patrice (2003) An overview of low noise devices and associated circuits for 100-200 GHz space applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Anakabe, A. and Collantes, J.M. and Portilla, J. and Jugo, J. and Mons, S. and Mallet, A. and Lapierre, L. (2003) Analysis of Odd-Mode Parametric Oscillations in HBT Multi-Stage Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van Bezooijen, André and Prikhodko, Dima and van Roermund, A.H.M. (2003) Biasing Circuits for Voltage Controlled GSM Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Leuzzi, Giorgio and Di Paolo, F. (2003) Bifurcation Synthesis by means of Harmonic Balance and Conversion Matrix. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Simburger, Werner and Kehrer, Daniel and Tiebout, Marc and Wohlmuth, Hans-Dieter and Knapp, Herbert and Wurzer, Martin and Perndl, Werner and Rest, Mirjana and Kienmayer, Christoph and Thuringer, Ronald and Bakalski, W. and Scholtz, Arpad L. (2003) CMOS and SiGe Bipolar Circuits for High-Speed Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Chandrasekhar, Arun and Stoukatch, Serguei and Brebels, S. and Balachandran, Jayaprakash and Beyne, Eric and De Raedt, W. and Nauwelaers, Bart and Poddar, Anindya (2003) Characterisation, Modelling and Design of Bond-Wire Interconnects for Chip-Package Co-Design Insertion Loss (dB). In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Malaver, Emigdio and Garcıa, Jose Angel and Tazon, Antonio and Mediavilla, Angel (2003) Characterizing the Linearity Sweet-Spot Evolution in FET Devices. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Issaoun, I. and Dousset, D. and Kouki, A.B. and Ghannouchi, F.M. (2003) Comparison of a New Modified Gummel-Poon Model and VBIC for AlGaAs/GaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Nuttinck, S. and Pinel, S. and Gebara, E. and Laskar, J. and Harris, M. (2003) Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Giorgio, Agostino and Perri, Anna Gina (2003) Design of Photonic Crystals Devices with Defects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

García, J.A. and Malaver, E. and Cabria, L. and Gómez, C. and Mediavilla, A. and Tazón, A. (2003) Device-level Intermodulation Distortion Control on III-V FET ’s Abstract. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cibiel, G. and Llopis, O. and Escotte, L. and Haquet, G. (2003) Devices selection for S to X bands low phase noise oscillator design. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sotero, Sonia and Herrera, Amparo and Cabo, Javier (2003) Dual Band Monolithic AGC Amplifier for Space Applications based on a commercial 0.2 µm PHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Detratti, Marco and Chuan, Jeffrey and Pascual, Juan Pablo and García, José Luis and Cabo, Javier (2003) E/D pHEMT Multi Frequency Generator GaAs MMIC for Aerospace Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tassetti, Charles-Marie and Lissorgues, Gaëlle and Gilles, Jean-Paul (2003) Effects of a loop array layer on a micro-inductor for future RF MEMS Components. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Charbonniaud, C. and De Meyer, S. and Quéré, R. and Teyssier, JP. (2003) Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Vandersmissen, Raf and Schreurs, Dominique and Carchon, G. and Borghs, G. (2003) Feedback Amplifier based on an Embedded HEMT in Thin-film Multilayer MCM-D Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Wang, Guoan and Bacon, Andrew and Abdolvand, Reza and Ayazi, Farrokh and Papapolymerou, John and Tentzeris, Emmanouil M. (2003) Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Seemann, Kay and Ramberger, Suitbert and Tessmann, Axel and Quay, Rudiger and Schneider, Joachim and Rießle, Markus and Walcher, Herbert and Kuri, Michael and Kiefer, Rudolf and Schlechtweg, Michael (2003) Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Coustou, A. and Sie, M. and Dubuc, D. and Graffeuil, J. and Tournier, E. and Llopis, O. and Plana, R. (2003) Frequency synthesis from 2 to 30 GHz using a 0.35 µm BiCMOS SiGe technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van Vliet, F.E. and van Wanum, M. and Roodnat, A.W. and Alfredson, M. (2003) Fully-integrated wideband TTD core chip with serial control. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Paparo, Mario and Erratico, Pietro and Murari, Bruno (2003) Future Trends in Si Technology/ICs for RF Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Muller, Alexandru and Konstantinidis, George and Neculoiu, Dan and Plana, Robert (2003) GaAs MEMS for Millimeter Wave Communications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Arena, M. and Belperio, F. and Calderone, L. and Comparini, M.C. and Leone, C. and Simone, L. (2003) GaAs, Advanced RF CMOS and Silicon Components for Miniaturised Space Digital Receiver. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Collodi, G. and Cidronali, A. and Toccafondi, C. and Santarelli, A. and Vannini, G. (2003) Global modeling approach to the design of an MMIC amplifier using Ohmic Electrode-Sharing Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Parvais, B. and Cerderia, A. and Schreurs, D. and Raskin, J.-P. (2003) Harmonic Distortion Characterization of SOI MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Subramaniam, Suba C. and Rezazadeh, Ali A. (2003) He + -and Fe+ -ion bombardments in the electrical isolation of InP/InGaAs HBT Structures. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cao, Xin and Thayne, Iain and Thoms, Stephen and Holland, Martin and Stanley, Colin (2003) High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Morris, Arthur S. and Cunningham, Shawn and Dereus, Dana and Schröpfer, Gerold (2003) High-Performance Integrated RF-MEMS: Part 1-The Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Murata, Koichi and Enoki, Takatomo and Sugahara, Hirohiko and Tokumitsu, Masami (2003) ICs for 100 Gbit/s Data Transmission. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Rodwell, M. and Scott, D. and Urteaga, M. and Dahlström, M. and Griffith, Z. and Wei, Y. and Parthasarathy, N. and Kim, YM and Pierson, R. and Rowell, P. and Brar, B. (2003) InP Bipolar Transistors:High Speed Circuits and Manufacturable Submicron Fabrication Processes. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zirath, Herbert and Grahn, Jan and Rorsman, Niklas and Mellberg, Anders and Stake, Jan and Angelov, I. and Starski, Piotr (2003) InP HEMTs and HBVs for Low Noise and Ultra-High Speed:Device and Circuit Research at Chalmers University of Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Neumann, S. and Prost, W. and Tegude, F.-J. (2003) InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Watanabe, Noriyuki and Uchida, Masahiro and Yokohama, Hideo and Araki, Gako (2003) Influence of carbon sources on thermal stability of C-doped base InP/InGaAs heterojunction bipolar transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zucchelli, G. and Santarelli, A. and Raffo, A. and Vannini, G. and Filicori, F. (2003) Influence of dispersive effects on large-signal models based on differential parameter integration. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Schlechtweg, Michael and Tessmann, Axel and Leuther, Arnulf and Schwörer, Christoph and Lang, Manfred and Nowotny, Ulrich and Kappeler, Otmar (2003) Integrated Circuits Based on 300 GHz fT Metamorphic HEMT Technology for Millimeter-Wave and Mixed-Signal Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Di Marcantonio, U. and Di Nardo, I. and Tursini, M. and Comparini, M.C. and Novello, R. and Leone, C. (2003) Integrated Substrate Packaging Based on LTCC and HTCC Technologies for Highly Integrated Space Equipment. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sonmez, E. and Trasser, A. and Abele, P. and Schad, B. and Schumacher, H. (2003) Integrated receiver components for low-cost 26 GHz LMDS applications using an 0.8 um Sige HBT technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Long, Sabine and Escotte, L. and Graffeuil, Jacques and Fellon, P. and Roques, Daniel (2003) Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van der Graaf, M.W. and van Wanum, M. and Maas, A.P.M. and Suijker, E.M. and Knight, A. and Ludwig, M. (2003) L-Band MMICs for Space-based SAR system. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sutton, William E. and Pavlidis, Dimitris and Lahrèche, Hacène and Damilano, Benjamin and Langer, Robert (2003) Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Basaran, U. and Berroth, M. (2003) Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method W. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bonani, F. and Donati Guerrieri, S. and Ghione, G. (2003) Large-signal compact diode noise modelling strategies for non-autonomous RF nonlinear applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lien, Y. C. and Chang, E. Y. and Chang, H. C. and Chu, L. H. and Huang, K. W. and Lee, H. M. and Lee, C. S. and Chen, S. H. and Shen, P. T. (2003) Low Noise Metamorphic HEMTs with Reflowed Submicron T-Gate. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mheen, Bongki and Park, Chan Woo and Kim, Sang Hoon and Kang, Jin-Yeong and Hong, Songcheol (2003) Low noise amplifiers in SiGe hetero-junction bipolar process using reduced pressure chemical vapor deposition. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bielecki, Z. and Kolosowski, W. and Dufrene, R. and Borejko, M. (2003) Low noise optical receivers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Schwörer, C. and Tessmann, A. and Leuther, A. and Massler, H. and Reinert, W. and Schlechtweg, M. (2003) Low-Noise W-Band Amplifiers for Radiometer Applications Using a 70 nm Metamorphic HEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Comparini, M.C. and Linkowski, J. R. and Montanucci, P. and Pizzuti, E. and Suriani, A. and Vasarelli, F. (2003) Low-cost, low-mass ltcc down converter for communication satellite payloads. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gomez–Garcıa, Roberto and Briso–Rodrıguez, Cesar and Mahfoudi, Mustapha and Alonso, Jose I. (2003) MMIC Tunable Transversal Bandpass Active Filter at 9–12 GHz. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Brown, April S. and Jokerst, Nan Marie and Brooke, Martin A. and Kuech, Thomas and Kuan, T.S. (2003) Materials to Microsystems:Heterogeneous Integration Technologies. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Hoffmann, Sebastian and Thiede, Andreas and Tommasino, Pasquale and Trifiletti, Alessandro and Vannucci, Antonello (2003) Measurement-based models of a 40 Gb/s modulator and its electrical driver for joint transmitter design. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Jin, Z. and Neumann, S. and Prost, W. and Tegude, F.-J. (2003) Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNx. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Osorio, Ricardo and Klein, Mona and Massler, H. and Korvink, Jan G. (2003) Micromachined Strip Line with SU-8 as the Dielectric. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Caloz, Christophe and Sanada, Atsushi and Itoh, Tatsuo (2003) Microwave Circuits Based on Negative Refractive Index Material Structures. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Deborgies, F. (2003) Microwave Technologies for Satellite Systems:an ESA Perspective. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ceylan, N. and Mueller, J.E. and Pittorino, T. and Weigel, R. (2003) Mobile Phone Power Amplifier Linearity and Efficiency Enhancement Using Digital Predistortion. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cavanna, T. and Feudale, M. and Ranieri, P. and Suriani, A. (2003) Multifunction MMIC For Miniaturized Solid State Switch Matrix. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Giannini, F. and Colantonio, P. and Leuzzi, G. and Orengo, G. and Serino, A. (2003) Neural-Based Nonlinear Device Models for Intermodulation Analysis. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Shur, Michael S. and Ryzhii, Victor (2003) New Concepts for Submillimeter-Wave Detection and Generation. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Balsi, Marco and Centurelli, F. and Forte, Alessandra and Scotti, Giuseppe and Tommasino, Pasquale and Trifiletti, Alessandro (2003) Non-Linear Statistical Modelling of GaAs FET Integrated Circuits Using Principal Component Analysis Abstract. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zamanillo, J.M. and Portilla, J. and Navarro, C. and Pérez-Vega, C. and Mediavilla, A. (2003) Optical Control of a GaAs Chip MMIC Amplifier at S Band. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

SuH, Youngsuk and Kim, I.S. and Song, J.S. (2003) Optimal Parameter Extraction Scheme of Current Sources and Bias Dependent Elements for HBT by searching the whole unknown Parameter Space. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zlámal, Jan and Myslík, Vladimír and Machác, Petr (2003) Pd/In-based Ohmic Contacts to n-GaAs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Reedy, Ronald E. (2003) Perspective of RF CMOS/Mixed Signal Integration in Next Generation Satellite Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kasai, D. and Kazami, Y. and Mitani, Y. and Horio, K. (2003) Physics-Based Device Simulation of Lag and Power Compression in GaAs FETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Auxemery, Ph. and Pataut, G. and Blanck, H. and Doser, W. (2003) Power HBT reliability for space applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Palomba, Francesco and Pagani, Maurizio and De Francesco, I. and Meazza, Andrea and Mornata, Alessandro and Procopio, Gregorio and Sivverini, Giuseppe (2003) Process-Tolerant High Linearity MMIC Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Machác, Petr and Žilka, Martin and Výborný, ZdeneČk (2003) Pt/GaAs side wall Schottky diode. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cidronali, A. and Loglio, G. and Jargon, J. and Remley, K.A. and Magrini, I. and DeGroot, D. and Schreurs, D. and Gupta, K.C. and Manes, G. (2003) RF and IF mixer optimum matching impedances extracted by large-signal vectorial measurements. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Melle, S. and Flourens, F. and Dubuc, D. and Grenier, K. and Pons, P. and Pressecq, F. and Kuchenbecker, J. and Muraro, J.L. and Bary, L. and Plana, R. (2003) Reliability Overview of RF MEMS Devices and Circuits. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Park, Min and Ahn, Hokyun and Kang, Dong Min and Ji, Honggu and Mun, Jaekyoung and Kim, Haecheon and Cho, Kyoung Ik (2003) Single Supply,High Linearity,High Efficient PHEMT Power Devices and Amplifier for 2 GHz &5 GHz WLAN Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Brabetz, T. and Fusco, Vincent F. (2003) Six-Port Receiver Front-End MMIC for V-Band MBS Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Moreira, Alberto and Krieger, Gerhard (2003) Spaceborne Synthetic Aperture Radar (SAR)Systems: State of the Art and Future Developments. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Melczarsky, I. and Costantini, A. and Zucchelli, G. and Paganelli, R.P. and Santarelli, A. and Vannini, G. and Filicori, F. (2003) Statistical modelling of electron devices based on an equivalent-voltage approach. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sheng, H. and Rezazadeh, A.A (2003) Study of temperature dependence of turn-on voltages IN III-V HBTS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Johansen, Tom K. and Vidkjaer, Jens and Krozer, Viktor (2003) Substrate Effects in SiGe HBT Modeling. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Pinel, S. and Lim, K. and DeJean, R.G. and Li, L. and Lee, C-H. and Maeng, M. and Davis, M.F. and Tentzeris, M. and Laskar, J. (2003) System-on-Package (SOP) Architectures for compact and low cost RF Front-end modules. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Joe, Jin Hyoun and Missous, Mohamed (2003) The Effects of Compositionally Graded Bases and Annealing on InGaP-GaAs HBTs Grown by MBE using a GaP Decomposition Source. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mishra, Meena and Muralidharan, R. and Harsh, * and Islam, S.S. and Das, Mukunda B. (2003) The Effects of Extended Depletion Region on Noise Modeling of HEMT ’s. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Chertouk, M. and Chang, W.D. and Yuan, C.G. and Chen, C.H. and Tu, D.W. (2003) The First 0.15um MHEMT 6 ”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Forestier, S. and Gasseling, T. and Bouysse, P. and Barataud, D. and Quere, R. and Nebus, J.M. (2003) Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sexton, James and Missous, Mohammed (2003) Thermal Stability of Beryllium Doped InP/InGaAs Single and Double HBTs Grown by Solid Source Molecular Beam Epitaxy. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Farina, M. and Rozzi, Tullio (2003) Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Issaoun, A. and Dousset, D. and Kouki, A.B. and Ghannouchi, F.M. (2003) Transcapacitances and Bias Dependent Time Delay and Base Resistance Expressions for Accurate Large Signal Modeling of HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cignani, R. and Costantini, A. and Vannini, Giorgio (2003) VCO Behavioral Model Based on the Nonlinear-Discrete Convolution Approach. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Leuzzi, Giorgio and Micheli, Claudio (2003) Variable-Load Constant-Efficiency Power Amplifier for Mobile Communications Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Whelan, C. S. and Herrick, K. and Leoni, R. E. and Marsh, P. F. and Zhang, Y. and Lardizabal, S. and Hoke, W. E. and Lichwala, S. and Kotce, J. and Balas, P. and Kazior, T. E. and Laighton, D. (2003) W-band Metamorphic Low Noise and Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Abele, P. and Ojefors, E. and Schad, K.-B. and Sonmez, E. and Trasser, A. and Konle, J. and Schumacher, H. (2003) Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kaper, Val and Thompson, Richard and Prunty, Tom and Shealy, James R. (2003) X-band AlGaN/GaN HEMT MMIC Vo ltage-Controlled Oscillator. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lee, Bok-Hyung and Lim, Byeong-Ok and Lee, Mun-Kyo and Rhee, Jin-Koo (2003) fmax =433GHz from 0.1 ī-gate InGaAs/InAlAs/GaAs Metamorphic HEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cao, Xin and Boyd, E. and Mclelland, Helen and Thoms, Stephen and Holland, Martin and Stanley, Colin and Thayne, Iain (2003) mm-wave Performance of 50nm T-Gate AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistors with fT of 200 GHz. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kayano, Hiroyuki and Iwata, Satoru and Sato, Hiroaki and Iseki, Yuji (2002) 2.5 GHz Wide Band Linear Amplifier with Feedforward Lineariser on a Board. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Darbandi, A. and Zoyo, M. and Touchais, J.Y. and Lévèque, H. (2002) 25W C-BAND highly efficient on board hybrid amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meng, Chin-Chun and Wu, Tzung-Han and Lu, Shey-Shi (2002) 28 dB Gain DC-6 GHz GaInP/GaAs HBT Wideband Amplifiers with and without Emitter Capacitive Peaking. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hoffmann, S. and Ojha, J.R. and Thiede, A. and Leblanc, R. and Wroblewski, B. (2002) 7 VPP Modulator-Driver for 40 Gbit/s Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Avitabile, G. and Chellini, B. and Giannini, F. and Limiti, E. (2002) A 18 GHz MMIC biquad active filter. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Virk, R.S. and O'Neal, M. and Camargo, E. and Ragle, R. and Notomi, S. and Gentrup, M. and Franzwa, E. and Hicks, G. and Fukugawara, T. (2002) A 43-Gbps Lithium Niobate Modulator Driver Module. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Miyaguchi, Kenichi and Hieda, Morishige and Tarui, Yukinobu and Hatamoto, Mikio and Kanaya, Koh and Kasahara, Michiaki and Takagi, Tadashi (2002) A 6-18 GHz 5-Bit Phase Shifter MMIC Using Series/Parallel LC Circuit. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reveyrand, T. and Mazière, C. and Nébus, J. M. and Quéré, R. and Mallet, A. and Lapierre, L. and Sombrin, J. (2002) A Calibrated Time Domain Envelope Measurement System for the Behavioral Modeling of Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bös, Thomas A. and Satoh, Tomio and Kajii, Kiyoshi and Camargo, E. and Hasegawa, Yuichi (2002) A Converter MMIC with Integrated LO Amplifier and Doubler. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Di Paolo, F. and Leuzzi, G. (2002) A Design approach for sub-harmonic generation or suppression in non-linear circuits. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. and Collodi, G. and Toccafondi, C. and Cignani, R. and Santarelli, A. and Vannini, G. and Filicori, F. (2002) A Distributed Approach for the Characterisation of Parasitic Networks in Electron Device Modelling. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ramachandran, V. and Joseph, A.J. and Johnson, J. B. and Gallagher, M. D. and Brandt, P. O. and Tilly, L. and Greenberg, D.R. and Ansley, W.E. and Gogineni, U. and Harame, D.L. and Dunn, J.S. (2002) A Fully-Manufacturable 0.5mm SiGe BiCMOS Technology for Wireless Power Amplifier Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giannini, F. and Limiti, E. and Orengo, G. and Serino, A. and De Dominicis, M. (2002) A High Gain-Bandwidth Product Distributed Transimpedance Amplifier IC for High-Speed Optical Transmission Using Low-Cost GaAs Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. and Collodi, G. and Magrini, I. and Manes, G. (2002) A Highly Linear Mixer For Zero-IF Bluetooth Receiver. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Masini, L. and Golfarelli, A. and Pozzoni, M. (2002) A Low Voltage 12-GHz Silicon-Germanium Static frequency divider with a Selectable Division Ratio. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bessemoulin, A. and Quentin, P. and Thomas, H. and Geiger, D. (2002) A Miniaturized 0.5-Watt Q-band 0.25-µm GaAs PHEMT High Power Amplifier MMIC. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Kallfass, Ingmar and Zeuner, Marco and Konig, Ulf and Schumacher, Hermann and Brazil, Thomas J. (2002) A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Siligaris, Alexandre and Vanmackelberg, Matthieu and Dambrine, G. and Vellas, Nicolas and Danneville, F. (2002) A New Empirical Non-linear Model for SOI MOSFET. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Centurelli, F. and Di Martino, A. and Marietti, P. and Scotti, G. and Tommasino, P. and Trifiletti, A. (2002) A Non-Linear Statistical Model for GaAs FET Integrated Circuits. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vorobiev, A. and Deleniv, A. and Talanov, V. and Gevorgian, S. (2002) A Simple Parallel-Plate Resonator Technique for Microwave. Characterization of Thin Resistive Films. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Condon, Emer and Brazil, Thomas J. (2002) A Simplified Non-Linear Physical Model for High Frequency FET’s. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Comparini, M. and Di Pasquale, Andrea and Feudale, Marziale and Giorgio, Agostino and Perri, Anna Gina (2002) A Technique to Design MMICs for Space Applications and High Production Yields. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Kwaspen, J.J.M. (2002) A Universal Test Set for DC and Pulsed I-V Characterization of Various Semiconductor Devices. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Buoli, Carlo and Gadaleta, Vito Marco and Turillo, Tommaso and Zingirian, Alessandro (2002) A broadband microstrip to waveguide transition for FR4 multilayer PCBs up to 50 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Paganelli, R. and Santarelli, A. and Zucchelli, G. and Costantini, A. and Vannini, G. and Filicori, F. (2002) A computationally efficient approach for the design of RF power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappelluti, F. and Bertazzi, F. and Ghione, G. (2002) A novel finite-difference time-domain approach to the self-consistent simulation of high-speed TW-EAMs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Jastrzebski, Adam K. (2002) A simple condition for maximum bandwidth of a chip packaged in an mm-wave waveguide. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Martín-Guerrero, T.M. and Esteban-Marzo, J. and Castillo-Vázquez, B. and Camacho-Peñalosa, C. (2002) A single relaxation-time non-quasi-static model for monolithic MESFET devices. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cortese, P. and Camiade, M. and Domnesque, D. (2002) A tiny and fully integrated differential VCO for LMDS application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Schreurs, D. and Vandenberghe, S. and Taher, H. and Nauwelaers, B. (2002) ANN Model For SiGe HBTs Constructed From Time-Domain Large-Signal Measurements. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Joodaki, M. and Kompa, G. and Hillmer, H. and Kassing, R. (2002) Advantages of the New Generation Quasi-Monolithic Integration Technology (QMIT). In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Song, Young-Jean and Oh, In-Ju and Seo, Kyu-Jae and Jeong, Yong-Chae and Kim, Chul-Dong (2002) Analog Controlled Adaptive Feedforward Amplifier for IMT-2000 Band. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Mitani, Y. and Kasai, D. and Horio, K. (2002) Analysis of Correlation between Breakdown Characteristics and Gate-Lag Phenomena in Narrowly-Recessed-Gate. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Dubuc, Nicolas and Duvanaud, Claude and Bouysse, Ph. (2002) Analysis of the Doherty technique and application to a 900MHz power amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reedy, Ronald E. (2002) Application of UTSi® CMOS On Sapphire to RF and Mixed Signal Requirements in Advanced Space Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Abdulrahman, B. and Baudoin, G. (2002) Applying Digital Predistortion To Power Amplifiers Used in Third Generation Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Acciari, G. and Giannini, F. and Limiti, E. and Rossi, M. (2002) Baseband Predistortion Lineariser Using Direct Spline Computation. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Duême, Ph. and Dequen, Th. and Funck, R. and Caillon, B. and Guerbeur, G. (2002) Broadband Active Phase Shifter GaAs MMIC. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Andersson, Kristoffer and Eriksson, Joakim and Rorsman, Niklas and Zirath, Herbert (2002) C-Band Resistive SiC-MESFET mixer. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Pagani, M. and Argento, D. and Bignamini, M. and De Francesco, I. and Frave, G. and Meazza, A. and Mornata, A, and Palomba, F. (2002) Characterisation of PHEMT intermodulation behaviour for highly linear MMIC power amplifier design. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ono, Naoko and Sasaki, Fumio and Arai, Kazuhiro and Iseki, Yuji (2002) Characteristics of GaAs HEMTs with Flip-Chip Interconnections. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hu, Juntao and Sun, Mike and Ho, Wu-Jing and Qin, Yue and Li, Jiang and Day, Ding (2002) Characterization and Modeling of InP DHBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cignani, R. and Costantini, A. and Vannini, G. and Filicori, F. and Manfredi, L. (2002) Circuit Architectures for Low-Phase-Noise Oscillators. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nightingale, S.J. and Philippakis, M. and Lovis, M. (2002) Considerations in the Design of Electro-Optic Modulators and Drivers for 40 Gb/s and Beyond. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Schwörer, C. and Tessmann, A. and Leich, M. and Leuther, A. and Kudszus, S. and Bessemoulin, A. and Schlechtweg, M. (2002) Coplanar High Performance MMICs in MHEMT and PHEMT Technology for Applications up to 100 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Mantovani, Andrea and Rossini, Gianpaolo and Zanghieri, Paolo (2002) Country size and the price of tradeables: is there any relationship beyond wishful thinking? DOI 10.6092/unibo/amsacta/646.

Centurelli, F. and Luzzi, R. and Scotti, G. and Tommasino, P. and Trifiletti, A. (2002) Design Centering and Yield Optimisation of MMIC’s with Off-Chip Digital Controllers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giorgio, Agostino and Perri, Anna Gina (2002) Design of Photonic Band-Gap Devices Using the Leaky Mode Propagation Method. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Camargo, E. and Virk, R.S. and Hajji, R. and Parker, S. and Ohnishi, H. (2002) Design of a Broadband Amplifier for High Speed Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Maya, M.C. and Lazaro, A. and Pradell, L. (2002) Determination of FET noise parameters from 50 Ω noise figure measurements using a distributed noise model. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Myslinski, M. and Schreurs, D. and Wiatr, W. (2002) Development and Verification of a Non-Linear Look-Up Table Model for RF Silicon BJTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Sugiyama, Hiroki and Yokoyama, Haruki and Watanabe, Kazuo and Kobayashi, Takashi (2002) Diffusion behavior of delta-doped Si in InAlAs/InP heterostructures. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meng, C. C. and Peng, A. S. and Wen, S. Y. and Huang, G. W. (2002) Direct observation of Gain compression mechanisms in PHEMT by RF Gate and Drain Currents. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

van Wanum, M. and van der Graaf, M.W. and Hoogland, J.A.H. and van Heijningen, M. (2002) Dual Transimpedance Amplifier for 43 Gbps applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappelluti, F. and Bonani, F. and Donati Guerrieri, S. and Ghione, G. and Naldi, C.U. and Pirola, M. (2002) Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Wane, S. and Bajon, D. and Baudrand, H. and Gamand, P. (2002) EM Analysis of Inhomogeneous Layers Stack from the Wave Concept. Reduction of Substrate Couplings in BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lutz, C.R. and Deluca, P.M. and Stevens, K.S. and Landini, B.E. and Welser, R.E. and Welty, R.J. and Asbeck, P.M. (2002) Enhancing the Device Performance of III-V Based Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Malbert, N. and Labat, N. and Lambert, B. and Touboul, A. and Pataut, G. (2002) Evidence of surface trap effects on pseudomorphic HEMT submitted to impact ionisation stresses. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massiot, Michel (2002) Evolution of LTCC technology for industrial applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Saglam, M. and Leo, E. and Bozzi, M. and Perregrini, L. and Rodriguez-Gironés, M. and Hartnagel, H.L. (2002) Fabrication, Testing, and Lumped Element Modeling of Planar Heterostructure Barrier Varactors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Manfrin, S.K. and De Dominicis, M. and Orengo, G. and Giannini, F. and Romero, M.A. (2002) Fast Tuning Electronically Switched 16 x 1 Channel Receiver For Packet-Switched WDM Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nuttinck, S. and Pinel, S. and Gebara, E. and Laskar, J. and Harris, M. and Shealy, J.R. (2002) Floating-Body Effects in AlGaN/GaN Power HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Singhal, S. and Brown, J.D. and Borges, R. and Piner, E. and Nagy, W. and Vescan, A. (2002) Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bollaert, S. and Parenty, T. and Wallart, X. and Happy, H. and Dambrine, G. and Cappy, A. (2002) HEMT's Design for Applications beyond 100GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Comparini, M.C. and Leone, C. and Montanucci, P. and Tursini, M. (2002) HTCC based Ku/IF/BB Down Converter for satellite on board processing applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hwang, Do-Kyeong and Jeong, Si-Gyun and Kwon, Young-Pil and Jeong, Yong-Chae and Kim, Chul-Dong (2002) Harmonic Reduction Amplifier using λ /4 High Impedance Bias Line with Defected Ground Structure (DGS). In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vellas, N. and Gaquiere, C. and Guhel, Y. and Werquin, M. and Ducatteau, D. and Boudart, B. and de Jaeger, J.C. (2002) High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

de Boer, A. and Hoogland, J.A. and Suijker, E.M. and van Wanum, M. and van Vliet, F.E. (2002) Highly-Integrated X-band Multi-function MMIC with Integrated LNA and Driver Amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cripps, Steve C. (2002) Ignoring the Obvious: Possibilities for On-chip Linearisation of RFIC Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Joodaki, M. and Tarraf, A. and Salih, M. and Albert, D. and Schröter-Hohmann, H. and Scholz, W. and Kompa, G. and Hillmer, H. and Kassing, R. (2002) Improvements of Thermal Resistance and Thermal Stress in Quasi-Monolithic Integration Technology (QMIT) with a New Fabrication Process. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Floriot, D. and Chartier, E. and Caillas, N. and Delage, S. L. and Jacquet, JC and Piotrowicz, S. (2002) InGaP Power HBTs : Basic power cells for High Power transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Follmann, R. and Langgartner, G and Borkes, J. and Wolff, I. (2002) Influence of backside metallization on a coplanar X-band LNA. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ardouin, M. and Bonte, B. and Zaknoune, M. and Théron, D. and Cordier, Y. and Bollaert, S. and De Jaeger, J.C. (2002) Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

van Vliet, F.E. and van den Bogaart, F.L.M. (2002) Integrated InP circuits and Si TTD for analogue optical beamforming applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Subramaniam, S.C. and Rezazadeh, A.A (2002) Investigation of He + -ion bombardment in the fabrication of planar InP/ InGaAs HBT structure. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Masuda, Toru and Landen, Lars and Zirath, Herbert (2002) Low Power Single-Ended Active Frequency Doubler for a 60 GHz-Band Application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Borgarino, M. and Peroni, M. and Cetronio, A. and Fantini, F. (2002) Low-Frequency Noise Characterization of AlGaAs/GaAs HBT’s. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Mazzanti, A. and Verzellesi, G. and Basile, A.F. and Canali, C. and Sozzi, G. and Menozzi, R. (2002) Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hartnagel, Hans L. (2002) Millimeter-Wave and Terahertz Devices Based on MEMS Concepts. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Edgar, David L. and Chen, Yifang and McEwan, Fiona and McLelland, Hellen and Boyd, E. and Moran, David and Thoms, Stephen and Macintyre, Douglas and Elgaid, K. and Cao, Xin and Stanley, Colin and Thayne, Iain (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs using a UVIII/PMMA Bilayer for 70nm T-Gate fabrication. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Toshev, A. and van der Graaf, M.W. and de Hek, A.P. and de Boer, A. and Arnaudov, A. and Vineshki, I. and Kamenopolsky, S. and Hlebarov, Z. (2002) Mixed Signal High Integration MMIC Phase Control Device for Application in Phased-Arrays. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Maas, Stephen (2002) Mixer Technologies for Modern Microwave and Wireless Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. and Camprini, M. and Collodi, G. and Nair, V. and Manes, G. and Lewis, J. and Goronkin, H. (2002) Modeling and Investigation of Instabilities in Heterojunction Interband Tunnel FET for Microwave Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Santarelli, A. and Zucchelli, G. and Bellavista, A. and Paganelli, R. and Vannini, G. and Filicori, F. (2002) Modelling of thermal dispersive effects in electron devices based on an equivalent voltage approach. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappy, A. and Stievenard, D. and Vuillaume, D. (2002) Nanotechnology : the Next Industrial Revolution ? In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massaro, A. and Di Donato, A. and Rozzi, T. (2002) Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massaro, A. and Di Donato, A. and Rozzi, T. (2002) Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giannini, F. and Leuzzi, G. and Orengo, G. and Colantonio, P. (2002) Neural-Based Large-Signal Device Models Learning First-Order Derivative Parameters for Intermodulation Distortion Prediction. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Zamanillo, J.M. and Navarro, C. and Perez-Vega, C. and Garcia, J.A. and Mediavilla, A. and Tazon, A. (2002) New Large Signal Model of AlGaAs P-HEMT and GaAs MESFET Under Optical Illumination. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Drevon, C. and Monfraix, Philippe and Paillard, Mathieu and Schaffauser, Chloé and Vendier, Olivier and Cazaux, Jean-Louis (2002) New Trends for Microwave Packaging into Space-Borne Equipment. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lal, N. and Nuttinck, S. and Raghavan, A. and Gebara, E. and Venkataraman, S. and Papapolymerou, J. and Laskar, J. (2002) Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Gaquière, Christophe and Ducatteau, D. and Delemotte, Pascal and Crosnier, Y. and Tranchant, Sylvie and Carnez, B. (2002) Non-linear distortion analysis of Ka BAND MMIC’s under single-tone, TWO-TONE and NPR excitations. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nyberg, P. and Vanhoja, A. (2002) Novel Variable Attenuator pHEMT MMIC's for Millimetre Wave Radio Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vandersmissen, R. and Schreurs, D. and Vandenberghe, S. and Borghs, G. (2002) Optical Control of a Backside Illuminated Thin-Film Metamorphic HEMT. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Camarchia, V. and Bellotti, E. and Goano, M. and Kim, S. and Ghione, G. (2002) Performance evaluation of submicron channel GaN vertical transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Jenkins, William and Khanifar, Ahmad (2002) Power Amplifier Linearisation Through Generation and Injection of Low-Frequency Second-Order Nonlinear Products. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lossy, Richard and Heymann, Peter and Würfl, Joachim and Chaturvedi, Nidhi and Müller, Stefan and Köhler, Klaus (2002) Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Colantonio, P. and Giannini, F. and Leuzzi, G. and Limiti, E. (2002) Power balance in high efficiency PAs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Aja, B. and de la Fuente, L. and Pascual, J.P. and Cryan, M. and Artal, E. (2002) Q-Band Monolithic GaAs PHEMT Low Noise Amplifiers: Comparative Study of Depletion and Enhancement Mode Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Fujii, M. and Kimura, I. and Satoh, T. and Imanaka, K. (2002) RF MEMS Switch with Wafer Level Package Utilizing Frit Glass Bonding. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Pinel, S. and Lim, K. and Maeng, M. and Davis, M.F. and Li, R. and Tentzeris, M. and Laskar, J. (2002) RF System-on-Package (SOP) Development for compact low cost Wireless Front-end systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Rajeev Ojha, John and Irmer, Sören and Daleiden, Jürgen and Hohmann, Heike and Hillmer, Hartmut (2002) Reactive Ion Etching of InP using Hydrocarbons. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Suh, Y.S. and Han, K.-Y. and Ahn, C.-H. and Heo, D. (2002) Scalable Large Signal Modeling of InGaP/GaAs HBT for CAD Tools. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meliga, Marina (2002) Semiconductor laser sources for datacom and telecom applications: recent trends. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lee, C. S. and Chang, E. Y. and Biswas, D. and Chang, Li and Huang, J. S. (2002) Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Diodes on n-GaN. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hsu, Shawn S.H. and Valizadeh, Pouya and Pavlidis, Dimitris and Moon, Jeong S. and Micovic, M. and Wong, Danny and Hussain, T. (2002) Study on Large-signal Linearity and Efficiency of AlGaN/GaN MODFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nuttinck, S. and Gebara, E. and Maeng, M. and Laskar, J. (2002) Temperature-Dependent Analysis and RF-Model of 10Gbps VCSELs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Sommet, R. and Lopez, D. and Quéré, R. (2002) Transient Analysis of Collector Current Collapse In Power HBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bazzi, H. and Bosse, S. and Delage, S. L. and Barelaud, Bruno and Billonnet, L. and Jarry, B. (2002) Using HBT BiCMOS differential structures at Microwaves in SiGe technologies. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reimann, M. and Ulm, M. and Buck, T. and Müller-Fiedler, R. and Heinrich, W. (2002) Vertical Silicon K-Band CPW Through-Wafer Interconnects. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vähä-Heikkilä, T. and Lahdes, M. and Kantanen, M. and Karttaavi, T. and Tuovinen, J. (2002) Very Wideband automated On-Wafer noise figure and Gain measurements At 50-110. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hwang, Yuh-Jing and Wang, Huei and Chu, Tah-Hsiung (2002) W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

De Raedt, W. and Brebels, S. and Monfraix, Ph. and Carchon, G. and Jourdain, Anne and Tilmans, Harrie A.C. (2001) 0-Level packaging techniques for flip-chip mounted MMICs. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bollaert, S. and Wallart, X. and Lepilliet, S. and Cappy, A. and Jalaguier, E. and Pocas, S. and Aspar, B. (2001) 0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Marcelli, Romolo and Dragoman, M. and Neculoiu, Dan and Giacomozzi, Flavio and Muller, Alexandru and Nitescu, N. (2001) 38 GHz Antennas on Micromachined Silicon Substrates. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Monteiro, Paulo P. and Violas, Manuel and Sousa Ribeiro, Rui and Ferreira da Rocha, José (2001) 40 Gbit/s GaAs MMIC Signal Processor for Optical Communication Systems. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bartocci, M. and De Santis, G. and Giolo, G. and Rossi, L. and Gemma, M. (2001) 4W TX/RX Multi Chip Module for 6-18GHz Phased Array. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Maruhashi, K. and Ito, M. and Ikuina, K. and Hashiguchi, T. and Matsuda, J. and Domon, W. and Iwanaga, S. and Takahashi, N. and Ishihara, T. and Yoshida, Y. and Izumi, I. and Ohata, K. (2001) 60GHZ-band flip-chip MMIC modules for IEEE1394 wireless adapters. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Tang, Yu-Lung and Wang, Huei (2001) A 24.6-GHz MMIC HBT Triple-Push Oscillator. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Hincelin, Guillaume (2001) A 2GHz Delta-Sigma Modulator implemented in InP HBT technology. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Zelley, C. A. and Barnes, A. R. and Ashcroft, R. W. (2001) A 60 GHz double balanced sub-harmonic mixer MMIC. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Wei, C.-J. and Gering, J. and Sprinkle, S. and Tkachenko, Y.A. and Bartle, D. (2001) A Compact, semi-physically based model predicts accurate aower and linearity of power InGaP HBTs. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Morioka, Shigeki and Yokoi, Kiyotaka and Yoshida, Katsuyuki and Shirasaki, Takayuki (2001) A DC to 40GHz Low Cost Surface Mountable RF-VIA TM Package. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kim, Chul-Soo and Kim, Young-Tae and Song, Seung-Hoon and Jung, Wan-Soo and Kang, Kwang-Yong and Park, Jun-Seok and Ahn, Dal (2001) A Design of Microstrip Directional Coupler for High Directivity and Tight Coupling. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Iversen, Christian Rye (2001) A MOS Model 9 Extension for GHz CMOS RF Circuit Design. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Loskot, E. and Leppävuori, S. and Kourbanov, A. and Vendik, I. and Lapshin, A. and Jakku, E. (2001) A Miniaturized branc-line directional coupler on low temperature cofired ceramic board. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Kim, Youngsik and Kim, JiYoun and Kim, Sungwoo and Kim, Bumman (2001) A Novel method for the Higher Order components extraction of the Channel current in GaAs MESFET. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Rosenberg, Uwe and Bornemann, Jens and Amari, Smain (2001) A compact and broadband 90-degree waveguide twist transformer for integrated waveguide subsystems. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Masini, Leonardo and Pozzoni, Massimo and Caliumi, Alberto and Tomasini, Luciano and Morigi, Damiana and Lemaire, Frederic (2001) A fully integrated silicon-germanium X-Band VCO. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Simbürger, W. and Bakalski, W. and Kehrer, D. and Wohlmuth, H.D. and Rest, M. and Aufinger, K. and Boguth, S. and Scholtz, A. L. (2001) A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sercu, Jeannick and Knockaert, Luc and De Zutter, Daniel (2001) A new mesh reduction technology for the method of moments modelling of planar RF and microwave interconnects. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Condon, M. (2001) A new technique for the transient simulation of transmission lines inclusive of skin effect. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Malaver, Emigdio and Garcia, José Angel and Tazon, Antonio and Mediavilla, Angel (2001) A novel approach for highly linear automatic gain control of a hemt small-signal amplifier. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Vajha, Sasidhar and Shastry, Prasad (2001) A novel proximity coupled active integrated antenna. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Cidronali, A. and Collodi, G. and Deshpande, M. and El-Zein, N. and Manes, G. and Nair, V. (2001) A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kantanen, M. and Lahdes, M. and Tuovinen, J. and Vähä-Heikkilä, T. and Kangaslahti, P. and Jukkala, P. and Hughes, N. (2001) A wideband automated measurement system for on-wafer noise parameter measurements at 50-75 GHZ. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Tocca, L. and Di Carlo, A. and Berliocchi, M. and Lugli, P. and Bartocci, M. and De Santis, G. and Giolo, G. and Rossi, L. and Gemma, M. (2001) Accurate estimation of layer temperature in PHEMT MMIC by photoconductance measurements. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Callery, K. and Lowbridge, P. (2001) Advances in Thin Film Techniques for Optical, Microwave and Millimeter wave Circuit Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Eastman, Lester F. (2001) AlGaN/GaN HFET’S. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Peroulis, Dimitrios and Pacheco, Sergio P. and Sarabandi, Kamal and Katehi, Linda P. B. (2001) Alleviating the Adverse effects of Residual Stress in RF MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Dehan, M. and Vanhoenacker, D. and Raskin, J.-P. (2001) Alternative architectures of SOI MOSFET for improving DC and microwave characteristics. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Nagy, Oliver and Heide, Patric and Springer, Andreas and Weigel, Robert (2001) An Investigation of the Proximity Effect of Millimeter-Wave MMICs in Flip-Chip Configuration. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Ofli, Erdem and Vahldieck, Ruediger and Amari, Smain (2001) Analysis and design of cross-coupled, folded e-plane filters with asymmetric responses. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Parker, Anthony E. and Rathmell, James G. (2001) Analysis of HEMT time-evolution characteristics. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Grenier, K. and Pons, P. and Plana, R. and Graffeuil, J. (2001) Bulk Silicon Micro-Machined MEM Switches For Millimeter-wave Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

de Hek, A.P. and de Boer, A. and Svensson, T. (2001) C-band 10-Watt HBT High-power Amplifier with 50% PAE. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Deluca, P.M. and Landini, B.E. and Welser, R. E. (2001) Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Palazzaril, V. and Placidi, P. and Stopponi, G. and Ciampolini, P. and Alimenti, F. and Roselli, L. and Scorzoni, A. (2001) Characterization of CMOS Spiral Inductors. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Hashizume, Tamotsu and Saitoh, Toshiya (2001) Correlation between Chemical and Electrical Properties of n-InGaP Surfaces Grown by MOVPE. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Schreurs, D. and De Raedt, W. and Vandersmissen, R. and Neuhaus, B. and Beyer, A. and Nauwelaers, B. (2001) Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Nakano, Hiroshi and Yamawaki, Hiromoto and Hirachi, Yasutake (2001) Cost-Effective 60-GHz Modules with Phase-Noise of -110dBc/Hz at 100KHz Offset using Novel Self-Heterodyne Scheme. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Ponchak, George E. and Papapolymerou, John and Tentzeris, Emmanouil M. (2001) Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

McGarvey, B. and Tentzeris, M. (2001) Coupling of Solid-State and Electromagnetic Equations for Simulation of Wireless Packaged Geometries. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Witvers, R.H. and Bij de Vaate, J.G. (2001) DC to 11GHz Fully Integrated GaAs Up Conversion Mixer. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Meng, C. C. and Lu, S. S. and Chen, H. C. and Chiang, M. H. and Kuan, J. F. and Lin, D. C. and Huang, G. W. (2001) DC-8 GHz 11 dB Gain GaInP/GaAs HBT Double balanced Gilbert Micromixer. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Tian, Zhengrong and Free, Charles and Barnwell, Peter and Wood, James and Aitchison, Colin (2001) Design of novel multilayer microwave coupled-line structures using thick-film technology. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Tentzeris, M. and Laskar, J. and Sutono, A. and Lee, C.–H. and Davis, M.F. and Obatoyinbo, A. and Lim, K. (2001) Development of Highly Integrated 3D Microwave - Millimeter Wave Radio Front-End System-on-Package (SOP). In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Mercier, D. and Blondy, P. and Cros, D. and Guillon, P. (2001) Distributed MEMS tunable filters. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Chigaeva, E. and Wieser, N. and Walthes, W. and Grözing, M. and Berroth, M. and Roll, H. and Breitschädel, O. and Off, J. and Kuhn, B. and Scholz, F. and Schweizer, H. (2001) Dynamic large-signal I-V analysis and non-linear modelling of ALGAN/GAN HEMTS. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Chigaeva, E. and Wieser, N. and Walthes, W. and Grözing, M. and Berroth, M. and Roll, H. and Breitschädel, O. and Off, J. and Kuhn, B. and Scholz, F. and Schweizer, H. (2001) Dynamic large-signal I-V analysis and non-linear modelling of ALGAN/GAN HEMTS. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Carbonera, F. and Bertazzi, F. and Goano, M. and Ghione, G. (2001) Efficient CM-FEM modeling of coplanar waveguides for high-speed e/o modulators. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bignamini, M. and Favre, G. and Meazza, A. and Pagani, M. and Palomba, F. and Sivverini, G. (2001) Efficient development of highly linear MMIC power amplifiers. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Rodriguez-Tellez, J. and Ali, N.T. and Fernandez, T. and Mediavilla, A. and Tazon, A. (2001) Electric field dependency of traps in mesfet/hemt devices. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Gorelenok, A.T. and Andrievskii, V.F. and Kamanin, A.V. and Kohanovskii, S.I. and Shmidt, N.M (2001) Electrical and photoluminescence properties of bulk GaAs after surface gettering. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Fagan, Christopher J. and Snowden, Christopher M. (2001) Electro-Thermal modelling of very High power Microwave bipolar Junction transistors. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Stevens, K.S. and Welser, R. E. and Deluca, P.M. and Landini, B. E. and Lutz, C. R. and Wolfsdorf-Brenner, T. L. (2001) Enhanced Performance GaAs-Based HBTs using a GaInNAs Base Layer. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Santarelli, A. and Zucchelli, G. and Paganelli, R. and Vannini, G. and Filicori, F. (2001) Equivalent-voltage description of low-frequency dispersive effects in large-signal fet models. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Dienelt, J. and Zimmer, K. and Rauschenbach, B. (2001) Etching behaviour of GaAs with chlorine chemically assisted ion beam etching depending on the surface temperature. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Young, P. R. and Collier, R. J. (2001) Exact solution of lossy asymmetrical coupled dielectric slab waveguides. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Van Thielen, B. L. A. and Vandenbosch, G.A. E. (2001) Fast method to include parasitic coupling in planar microwave circuits calculations. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Yajian, Huang and Alphones, Arokiaswami (2001) Frequency Dependence of HEMT Under Optical Illumination. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Megej, A. and Beilenhoff, K. and Sydlo, C. and Hartnagel, H. L. (2001) Fully Monolithically Integrated Wide-Band RF-Source. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Panks, A. J. and Batty, W. and David, S. and Johnson, R. G. and Snowden, C. M. (2001) Fully physical electro-thermal CAD for Power FET optimisation by Non Uniform Finger Spacing. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Jolly, C. and Keenan, R. and Hug, J. and Lucek, J. and Ou, S. and Bonaguide, G. and Osman, S. and Wagemans, A. (2001) GaAs HBT PA module design for CDMA handsets. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Marzolf, Eric and Drissi, M’hamed (2001) Global design of an active integrated antenna for millimeter wave. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Théron, D. and Cordier, Y. and Wallart, X. and Bollaert, S. and Zaknoune, M. and Boudrissa, M. and Bonte, B. and Gaquière, C. and Rousseau, M. and Dessenne, F. and Mollot, F. and Cappy, A. and Fauquembergue, R. and De Jaeger, J.C. (2001) Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Hirata, M. and Mimino, Y. and Hasegawa, Y. and Fukaya, J. (2001) High Dynamic-Range and Very Low Noise K-Band p-HEMT LNA MMIC for LMDS and Satellite Communication. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Litwin, A. and Chen, Q. and Johansson, J. and Ma, G. and Olofsson, L-A. and Perugupalli, P. (2001) High Power LDMOS technology for wireless infrastructure. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sönmez, E. and Trasser, A. and Schad, K. -B. and Abele, P. and Schumacher, H. (2001) High Power Ultra Compact VCO with Active Reactance Concepts at 24 GHz. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Virk, Robinder S. and Bos, Thomas A. and Camargo, E. and Hasegawa, Yuichi (2001) High dynamic range MMIC converters for LMDS applications. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Enciso, M. and Aniel, F. and Giguerre, L. and Crozat, P. and Adde, R. (2001) High frequency properties of Si/SiGe n-MODFETs: dependence on gate length and temparture. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kamenopolsky, Stanimir and Dankov, Plamen (2001) High performance test fixture for 10-Port MMIC's characterisation. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Floriot, D. and Delage, S. L. and Piotrowicz, S. and Chartier, E. and Auxemery, P. (2001) High power HBT technologies : present and trends. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Manfrin, S.K. and Orengo, G. and Giannini, F. and Romero, M. A. (2001) High tuning speed optical receiver front-end for packet-switched WDM Networks. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Vrancken, Mark and Vandenbosch, Guy A. E. (2001) Hybrid Dyadic -MPIE Integral Equation Analysis of Passive Microwave Devices in Layered Media. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Jourdain, A. and Brebels, S. and De Raedt, W. and Tilmans, H. A. C. (2001) Influence of 0-level packaging on the microwave performance of RF-MEMS devices. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Jourdain, A. and Brebels, S. and De Raedt, W. and Tilmans, H. A. C. (2001) Influence of 0-level packaging on the microwave performance of RF-MEMS devices. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Madonna, G. L. and Pfost, M. and Schultheis, R. and Mueller, J.E. (2001) Investigations of linearity characteristics for larege-emitter area GaAs HBT power stages. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Colicchia, L. and Comparini, M.C. and Di Nardo, S. and Leone, C. and Giordano, M. and Ranieri, P. and Suriani, A. and Tursini, M. (2001) Ku & C Band solid state switch matrix for satellite payloads using LTCC multilayer substrate. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bouisse, Gerard (2001) Latest advances in high power SI MMIC. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Gevorgian, S. and Berg, H. (2001) Line capacitance and impedance of coplanar-strip waveguides on substrates with multiple dielectric layers. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Sueamtsu, N. and Ono, M. and Nakajima, K. (2001) Low Loss On-chip passive components for Si-MMIC by using CPW structure. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Danneville, F. and Tamen, B. and Cappy, A. and Juraver, J-B and Llopis, O. and Graffeuil, J. (2001) Low frequency noise conversion in fets under nonlinear operation. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Aja, B. and de la Fuente, M.L. and Pascual, J.P. and Mediavilla, A. and Artal, E. (2001) Low noise monolithic Ka-BAND P-HEMT amplifier for space applications. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Martoglio, L. and Richalot, E. and Picon, O. and Lissorgues-Bazin, G. and Vasseure, C. (2001) Low-Loss microstrip MEMS technology for RF passive components. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Shepherd, P. R. and Taylor, C. and Evans l, P. S. A. and Harrison, D. J. (2001) Measurement and Modelling of MIC Components Using Conductive Lithographic Films. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Xiong, Yong Zhong and Ng, Geok-Ing and Wang, Hong and Fu, Jeffrey S. and K, Radhakrishnan (2001) Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Sajin, George and Marcelli, Romolo (2001) Micromachined magnetostatic wave resonators. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Sutton, William and Alekseev, Egor and Pavlidis, Dimitris (2001) Microwave and DC Performance of AlGaN/GaN HEMTs Grown on Si using a New Growth Technique. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Monfraix, P. and Albo, L. and Drevon, C. and Cazaux, Jean-Louis and Roux, J.L. (2001) Microwave glob top for space applications : A route to non hermiticity. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Kriz, Jeff (2001) Mixed Mode Silicon-on-Insulator MMIC Technology for digitally controlled RF/Microwave Systems. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Uusitupa, T. and Viitanen, A. (2001) Mode transformer for hard-surface waveguides. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Lenk, Friedrich and Schott, Matthias and Heinrich, Wolfgang (2001) Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Malyshev, S.A. and Chizh, A. (2001) Modeling and characterization of photovaractor for microwave optoelectronics abstract. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Gould, P. and Lin, J. and Boric-Lubecke, O. (2001) NMOS SPDT Switch MMIC with >44 dB Isolation and 30 dBm IIP3 for Applications within GSM and UMTS bands. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Wollitzer, M. and Thies, S. and Schott, S. (2001) New Probing Technology Now Enables Impedance controlled On-Wafer Probing. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

A cura di: NOT SPECIFIED (2001) New method for computing transmission coefficient of integrated ferrite coplanar isolator. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Bouysse, Ph. and Barataud, D. and Sommet, R. and Teyssier, J.P. and Nébus, J.M. and Quéré, R. (2001) New trends in characterization and modeling of High Power devices. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kim, Woonyun and Kang, Sanghoon and Lee, Kyungho and Chung, Minchul and Kim, Bumman (2001) Non linear behavior of power HBT. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Picard, Stephan D. and Hettak, Khalifa and Stubbs, Malcolm and Wight, Jim S. (2001) Novel CPW-based Phase Shifter for LMCS/LMDS Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Muldavin, Jeremy B. and Rebeiz, Gabriel M. (2001) Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Siripon, N. and Chongcheawchamnan, M. and Robertson, I. D. (2001) Novel Sub-Harmonic Injection-Locked Balanced Oscillator. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Villemazet, JF. and Rogeaux, E. and Roques, D. and Cayrou, Jean-Christophe and Cogo, B. and Solulard, M. and Cazaux, Jean-Louis (2001) Novel compact double balanced coplanar active mixer Application to a single chip MMIC receiver for satellite repeater. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sannino, M. and Caddemi, A. and Donato, N. (2001) On wafer thermal investigation of gaas-based microwave transistors by a thermoelectric system. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Szczepaniak, Zenon R. and Galwas, Bogdan A. and Malyshev, Sergei A. (2001) Optically-switched microwave filter with the use of photovaractors in self-bias mode. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Alphones, Arokiaswami and Yee, Wong Kai (2001) Optimization of spiral inductor on silicon. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Bianco, P. and Donati Guerrieri, S. and Ghione, G. and Pirola, M. and Naldi, C.U. and Florian, C. and Vannini, G. and Santarelli, A. and Filicori, F. and Manfredi, L. (2001) Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Blondy, P. and Mercier, D. and Cros, D. and Guillon, P. and Rey, P. and Charvet, P. and Diem, B. and Zanchi, C. and Lapierre, L. and Sombrin, J. and Quoirin, J.B. (2001) Packaged Millimeter Wave Thermal MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Olavsbråten, Morten (2001) Parameter extraction and evaluation of the Bias dependence of Tf, for the VBIC Model used on a GaAs HBT. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Tkachenko, Y. and Wei, C. and Sprinkle, S. and Gering, J. and Lee, J. and Kao, T. and Zhao, Y. and Ho, W. and Sun, M. and Bartle, D. (2001) Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Rebeiz, Gabriel M. (2001) Phase Noise Analysis of MEMS-Based Phase Shifters. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Rudiakova, Anna N. and Krizhanovski, Vladimir G. and Kazimierczuk, Marian K. (2001) Phase tuning approach for polyharmonic power amplifiers. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Molchanov, Pavlo and Mulyar, Pavel and Podobna, Yulia and Checkotun, Victoria (2001) Prospect of microwave negasensors application for ecological monitoring abstract. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Walden, Mark G. (2001) Pulsed power operation of commercially available silicon carbide mesfets. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Nair, Vijay and Deshpande, M. and Lewis, Jonathan and El-Zein, N. and Ageno, Scott and Kramer, Gary and Kyler, Marilyn and Hupp, Mike and Goronkin, Herb (2001) Quantum MMIC (QMMIC) VCO’s for Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Joodaki, M. and Senyildiz, T. and Kompa, G. and Hillmer, H. and Leinhos, T. and Kassing, R. (2001) Quasi-Monolithic integration technology (QMIT) for power applications. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Leier, H. and Wieszt, A. and Behtash, R. and Tobler, H. and Vescan, A. and Dietrich, R. and Schurr, A. and Sledzik, H. and Birbeck, JCH. and Balmer, R. S. and Martin, T. (2001) RF Power performance of passivated ALGAN/GAN hfets grown on sic and sapphire. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Fernandes, P. and Raffetto, M. (2001) Reliability and performances of finite element CAD tools for the solution of microwave problems. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Deleniv, A. and Gashinova, M. and Vendik, I. B. (2001) Sda full-wave analysis of boxed multistrip lines of finite thickness embedded in a layered lossy medium. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Cappelluti, F. and Bonani, F. and Donati Guerrieri, S. and Ghione, G. and Naldi, C. U. and Peroni, M. and Cetronio, A. and Graffitti, R. (2001) Self-consistent fully dynamic electro-thermal simulation of power HBTS. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Margomenos, Alexandros and Peroulis, Dimitrios and Herrick, Katherine J. and Katehi, Linda P. B. (2001) Silicon Micromachined Packages for RF MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Saint-Etienne, Eric and Reig, Bruno and Deborgies, F. and Ghesquiers, Jean-Pierre and Roques, Daniel and Le Meur, Gerard and Cogo, B. and Mancuso, Yves (2001) Silicon Packaging and RF Solder-free Interconnect for X-band SAR T/R Module. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sakalas, P. and Zirath, H. and Litwin, A. and Schröter, M. and Matulionis, A. (2001) Size dependent influence of the pad and gate parasitic elements to the microwave and noise performance of the 0.35 µm n and p type MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Prokopenko, Yu.V. and Filippov, Yu.F. (2001) Spectral characteristics of anisotropic dielectric disk resonator with imperfect conducting end walls. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Lopez, D. and Sommet, R. and Quéré, R. (2001) Spice Thermal Subcircuit of Multifinger HBT derived from Ritz Vector reduction technique of 3D Thermal Simulation for electrothermal modeling. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Toner, B. and Fusco, V.F. and Alam, M.S. and Armstrong, G.A. (2001) Sub-Micron CMOS Characterisation for Single Chip Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Ver Hoeye, S. and Gutiérrez, L. and Sancho, S. and Suárez, A. and González, P. (2001) Sub-harmonic and rational synchronization for phase-noise improvement. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Akyol, Ahmet Soydan and Davis, Lionel Edward (2001) The Ferrite_dielectric interface and its applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Railton, Chris J (2001) The choice of cell size and the use of pre-calculated correction factors in the analysis of planar circuits using FDTD and TLM. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Zagriadski, S.V. and Tretyakov, S.A. (2001) The principle of symmetry of kinetic coefficients for media with ferrite inclusions and its application to nonreciprocal BI-ANISOTROPIC composites. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Kirilenko, A. and Mospan, L. (2001) The simplest notch and bandstop filters based on the slotted strips. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Schreurs, D. and Verspecht, J. and Acciari, G. and Colantonio, P. and Giannini, F. and Limiti, E. and Leuzzi, G. (2001) Theoretical and experimental assessment of the non-linear scattering functions for the cad of non-linear microwave circuits. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Zhu, Yu and Cai, Q. and Gerber, Jason (2001) Thermal resistance extraction of power transistor using electric field simulation. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Buoli, Carlo and Biffi, Giovanni and Turillo, Tommaso and Zingirian, Alessandro (2001) Thick metal plate insertion make FR4 multilayer board a simple carrier for RF power circuits. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Hammad, Hany F. and Freundorfer, Alois P. and Antar, Yahia M.M. (2001) Unconditional stabilization of CS and CG Mesfet Transistor. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Linnik, M. and Christou, A. (2001) Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Murgadella, F. and Coulon, P. and Moreau, C. (2001) X-BAND technologies and MMICS comparison for active phased Array Radar. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Touirat, M. and Roger, M. and Nuyen, L.T. and Crosnier, Y. and Salmer, G. (2000) 0.3µm-N-HIGFET capabilities for microwave power apllications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Darbandi, A. and Zoyo, M. and Loval, L. and Buret, H. and Michard, F. (2000) 10W C-BAND highly efficient HYBRID-MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hue, X. and Rogeaux, E. and Cazaux, Jean-Louis and Mallet, A. and Lapierre, L. and Boudart, B. and Bonte, B. and Crosnier, Y. (2000) 1W/mm GaAs pHEMT for realization of linear power amplifier in the K band. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rasà, F. and Celestino, F. and Remonti, M. and Gabbrielli, B. and Quentin, P. (2000) 37-40GHz MMIC Sub-Harmonically Pumped Image Rejection Diode Mixer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

König, Frédy and Shimizu, Haruo and Takahashi, Hidenori and Miyazawa, Shigemi and Fukaya, Jun (2000) 4W GaAs MMIC Power Amplifier for PCS and W-CDMA Base Station. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Raynaud, C. and Faynot, O. and Pelloie, J.-L. and Tabone, C. and Grouillet, A. and Martin, F. and Dambrine, G. and Vanmackelberg, M. and Picheta, L. and Mackowiak, E. and Brut, H. and Llinares, P. and Sevenhans, J. and Compagne, E. and Fletcher, G. and Flandre, D. and Dessard, V. and Vanhoenacker, D. and Raskin, J.-P. (2000) 70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mueller, J.-E. and Gerlach, U. and Madonna, G.L. and Pfost, M. and Schultheis, R. and Zwicknagl, P. (2000) A 3V small chip size GSM HBT power MMIC with 56% PAE. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mediavilla, A. and Tazon, A. and Garcia, J.A. and Zamanillo, J.M. and Fernandez, T. (2000) A Coherent Small/Large Signal FET model Based on Neuronal Architectures 1. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hirachi, Yasutake and Nakano, Hiroshi and Kato, Akihito (2000) A Cost-Effective Receiver-Module with Built-in Patch Antenna for Millimeter-Wave Wireless Systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sun, Y. and Tieman, T. and Pflug, H. and Velthuis, W. (2000) A Fully Integrated Dual-Frequency Push-Push VCO for Wideband Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Quentin, P. and Gallien, A. and Rasà, F. and Gabbrielli, B. (2000) A GaAs MMIC chip-set for 10 to 15GHz radio-links applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ichikawa, S. and Satoh, T. and Shimura, T. and Betti-Berutto, A. and Furukawa, Y. and Hasegawa, Y. and Kuroda, S. and Fukaya, J. (2000) A Gate Bias Free P wer MMIC Module for Ka-Band High-speed Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tavernier, Christophe A. and Henderson, Rashaunda and Papapolymerou, John (2000) A Hybrid Micromachined High -Q Cavity Resonator at 5.8 GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zelley, C. A. and Gould, P. A. and Munday, P. D. and Ashcroft, R. W. (2000) A J-band Transceiver MMIC with image rejection. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hayashi, Hisanori and Ui, Norihiko and Saito, Toshiaki and Fukaya, Jun (2000) A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Simon, H. and Périchon, R.A (2000) A MMIC broad-band 90° power divider using a new all-pass active filter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cidronali, A. and Collodi, G. and Deshpande, M. and El-Zein, N. and Goronkin, H. and Manes, G. and Nair, V. and Toccafondi, C. (2000) A MMIC lumped element directional coupler with arbitrary characteristic impedance and its application. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ang, K.S. and Robertson, I.D. (2000) A Monolithic Double-balanced Upconverter for millimeter-wave Point-to-Multipoint Distribution Systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Devlin, L. and Dearn, A.W. and Beasley, P.D.L. (2000) A Monolithic, Dual Channel, 0.5 to 20GHz Limiter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bousnina, S. and Ghannouchi, Fadhel M. and Surridge, R. (2000) A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bousnina, S. and Ghannouchi, Fadhel M. and Surridge, R. (2000) A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Olavsbråten, Morten (2000) A Practical Method of Parameter Extraction for the VBIC Model used on a GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Duchamp, G. and Gauffre, S. and Casadebaig, L. and Pistre, J. (2000) A broadband microwave amplifier using multilayer technology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Pagani, M. and Favre, G. and Andersson, H. and Carminati, M. (2000) A fully integrated monolithic local oscillator for LMDS radio link applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Vaudescal, O. and Kabat, D. and Couturier, A.M. and Sevin, R. and Dourlens, C. and Quentin, P. (2000) A highly integrated MMIC Chipset for 40 GHz MVDS Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Vaudescal, O. and Lefebvre, B. and Couturier, A.M. and Sevin, R. and Dourlens, C. and Quentin, P. (2000) A highly integrated MMIC chipset for 28 GHz LMDS Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rao, Nagaraja and Parfitt, Andrew and Dadello, Anna and Ward, Damon and Bird, Trevord (2000) A low noise KA-BAND down converter for space applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Laloue, A. and Camiade, M. and Valenza, M. and Vildeuil, J.C. and Nallatamby, J.C. and Prigent, M. and Obregon, J. and Quéré, R. (2000) A measurement based model of HEMT teking into account the non linear, non uniform transmission line nature of the channel its associated low frequency noise sources. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Brabetz, T. and Fusco, V.F. (2000) A new technique for noise figure measurements of millimetre-wave mixers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Roques, Daniel and Brasseau, F. and Cogo, B. and Soulard, Michel and Cazaux, Jean-Louis (2000) A non quasi-static non-linear P-HEMT model operating up to millimetric frequencies. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Avitabile, G. and Chellini, B. and Giannini, F. and Limiti, E. (2000) A novel high Q active inductor for millimeter wave applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Le Gallou, N. and Barataud, D. and Buret, H. and Nebus, J.M. and Ngoya, E. (2000) A novel measurement method for the extraction of dynamic Volterra Kernels of microwave power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Centurelli, F. and Luzzi, R. and Olivieri, M. and Pennisi, S. and Trifiletti, A. (2000) A novel topology for a HEMT negative current mirror. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zamanillo, J.M. and García, J.A. and Mediavilla, A. and Tazón, A. and Pérez-Vega, C. (2000) A straightforward method for determining SiGe HBTs intrinsic elements of hibrid PI and TEE small-signal circuit models for multibias operation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Heymann, P. and Doerner, R. and Rudolph, M. (2000) A universal measurement system for microwave power transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Saglam, M. and Bozzi, M. and Domoto, C. and Megej, A. and Rodriguez–Girones, M. and Perregrini, L. and Hartnagel, H.L. (2000) ALGAAS HBV performance in frequency tripling at 255 GHZ. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Giannini, Franco and Graglia, Fabio and Leuzzi, Giorgio and Serino, Antonio (2000) Accurate microwave characterisation of power LD-MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

McGarvey, B. and Staiculescu, D. and Tentzeris, M. and Laskar, J. (2000) Adaptive Modeling of Complex Packaging Geometries Using Haar-based MRTD Algorithms. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Gaye, M. and Ajram, S. and Maynadier, P. and Salmer, G. (2000) An ultra-high switching frequency step-down DC-DC converter based on Gallium Arsenide devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Adirosi, F. and Comparini, M.C. and Leone, C. (2000) Application of Silicon-based RF IC devices in space communication systems &equipment. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Goyal, Ravender and Veremey, Vladimir (2000) Application of neural networks to efficient design of wireless and RF circuits and systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Giannini, F. and Leuzzi, G. and Orengo, G. and Albertini, M. (2000) Artificial neural network approach for MMIC passive and active device characterization. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cappelluti, F. and Mathai, S. and Wu, M.C. and Ghione, G. (2000) Balanced Electroabsorption Modulator for High-Linearity, Low-Noise Microwave Analog Optical Link. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Menozzi, R. (2000) Breakdown and high-field reliability issues in heterojunction FETs for microwave power amplification. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Alekseev, Egor and Hsu, Shawn S.H. and Pavlidis, Dimitris (2000) Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Frank Chau, H.-F. and Chen, Zhengming and Larry Wang, N.-L. and Sun, Xiaopeng and Lin, Barry (2000) Conversion of AlGaAs intoInGaP emitter HBT RF ICs for improved manufacturability. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Weinreb, S. and Gaier, T. and Fernandez, J.E. and Erickson, N. and Wielgus, J. (2000) Cryogenic MMIC low noise amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bij de Vaate, J.G. and Woestenburg, E.E.M. and Witvers, R.H. and Pantaleoni, R. (2000) Decade Wide Bandwidth Integrated Very Low Noise Amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Pozela, J. and Pozela, K. and Juciene, V. (2000) Decrease of Modfet channel conductivity with increasing sheet electron concentration. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Biron, Frédéric and Plaze, Jean-Philippe and Billonnet, L. and Cros, D. and Jarry, Bernard and Guillon, Pierre (2000) Design Procedure for Loss Compensation of Planar Microwave Filters Using Negative Resistances For Tuneable Bandstop and Bandpass Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Kim, Dong-Wook and Paek, Seung-Won and Lee, Jae-Hak and Jeon, Kye-Ik and Lim, Chae-Rok and Kwon, Young-Woo and Chung, Ki-Woong (2000) Design and Fabrication of 77GHz HEMT Mixer Modules using Experimentally Optimized Antipodal Finline Transitions. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bos, Thomas A. and Camargo, E. (2000) Design of PHEMT Diodes for MMIC Mixer Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rizk, Jad B. and Muldavin, Jeremy B. and Tan, Guan-Leng and Rebeiz, Gabriel M. (2000) Design of X-Band MEMS Microstrip Shunt Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bessemoulin, A. and Marsetz, W. and Baeyens, Y. and Osorio, R. and Massler, H. and Hülsmann, A. and Schlechtweg, M. (2000) Design of coplanar power amplifiers for MM-WAVE system applications including thermal aspects. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mateos, Javier and González, Tomas and Pardo, Daniel (2000) Design optimisation of ultra-short gate HEMTS using MONTE CARLO simulation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Emanuelsson, Thomas and Thöresson, Stefan (2000) Design techniques for linear requirements for MMIC power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Monfraix, P. and Adam, T. and Lacoste, J.L. and Drevon, C. and Naudy, G. and Cogo, B. and Cazaux, Jean-Louis and Roux, J.L. (2000) Design to reliability shielded vertical interconnection applied to microwave Chip Scale Packaging. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Schreurs, D. and Vandamme, E. and van Dinther, C. (2000) Development and verification of a non-linea look-up table model for mosfets. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Schreurs, D. and Tufillaro, N. and Wood, J. and Usikov, D. and Barford, L. and Root, D.E. (2000) Development of time domain behanioural non-linear models for microwave devices and ICS from vectorial large-signal measurements and simulations. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Casu, M.R. and Lanzieri, C. and Masera, G. and Piccinini, G. and Zamboni, M. (2000) Digital Circuits in a Multi-Functional SAGFET MMIC Technology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Merrar, A. and Deshours, F. and Algani, C. and Nardini, C. and Alquié, G. (2000) Direct digital modulation introduced via optically-controlled GAPS in active MMIC on GaAs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cavassilas, N. and Aniel, F. and Nojeh, A. and Adde, R. and Zaknoune, M. and Bollaert, S. and Cordier, Y. and Theron, D. and Cappy, A. (2000) Electroluminescence of metamorphic In x Al 1-x As / In x Ga 1-x As HEMTs ON GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sommet, R. and Lopez, D. and Quéré, R. (2000) Electrothermal harmonic balance simulation of an INGAP/GAAS HBT based on 3D thermal and semiconductor transport models. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tkachenko, Y. and Zhao, Y. and Wei, C. and Bartle, D. (2000) Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Stenarson, Jörgen and Wadefalk, Niklas and Garcia, Mikael and Angelov, I. and Zirath, Herbert (2000) FET Noise Model Extraction Methods. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Costantini, A. and Paganelli, Rudi and Traverso, Pier Andrea and Zucchelli, Giorgia and Santarelli, Alberto and Vannini, Giorgio and Filicori, Fabio and Monaco, Vito Antonio (2000) FMM and NDC technology-independent finite-memory nonlinear device models: ADS implementation and large-signal validation results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ponchak, George E. and Simons, Rainee N. and Scardelletti, Maximilian C. and Varaljay, Nicholas C. (2000) Finite Ground Coplanar Waveguide Shunt MEMS Switches for Switched Line Phase Shifters. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

George, Sebastien and Drevon, C. and Cazaux, Jean-Louis (2000) Flip-chip for space applications : Bonding reliability, DC and RF results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Megej, A. and Beilenhoff, K. and Hartnagel, H.L. (2000) Fully Integrated PHEMT Voltage Controlled Oscillator with Very High Tuning Bandwidth. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Camiade, M. and Domnesque, D. and Ouarch, Z. and Sion, A. (2000) Fully MMIC-Based Front End for FMCW Automotive Radar at 77GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Comparini, M.C. and Feudale, M. and Linkowski, J.R. and Ranieri, P. and Suriani, A. (2000) Fully integrated Ka/K band hermetic receiver module. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Lapin, V.G. and Temnov, A.M. and Krasnik, V.A. and Petrov, K.I. (2000) GAAS Microwave offset gate self-aligned MESFETs and their applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

de Boer, A. and Mouthaan, K. (2000) GaAs mixed signal multi-function X-BAND MMIC with 7 bit phase and amplitude control and integrated serial to parallel converter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Boudrissa, M. and Delos, E. and Cordier, Y. and Theron, D. and De Jaeger, J.C. (2000) Gate ionization current of an Enhancement-Mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Alleaume, P.F. and Auxemery, Ph. and Viaud, J.P. and Blanck, H. and Lajugie, M. (2000) HBT technology for high power X band and broadband amplification. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Acciari, G. and Giannini, F. and Leuzzi, G. and Saggio, G. (2000) Harmonic Solution for Periodic Waveforms of the BTE ’s for Microwave and Millimetre-Wave Active Device Modelling. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Dillner, Lars and Ingvarson, Mattias and Kollberg, Erik and Stake, Jan (2000) Heterostructure barrier varactor multipliers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Betti-Berutto, A. and Poledrelli, C. and Benelbar, R. and Chen, S.T. and Khandavalli, C. and Satoh, T. and Hasegawa, Y. and Kuroda, S. and Fukaya, J. (2000) High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bouisse, Gerard (2000) High Power silicon MMIC design for wireless base stations. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

DeLuca, P.M. and Rodrigues, J. and Han, B.-K. and Pan, N. (2000) High Uniformity 6” InGaP/GaAs Heterojunction Bipolar transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Butel, Y. and Adam, T. and Cogo, B. and Soulard, M. (2000) High efficiency LOW AM/PM 6W C-band MMIC power amplifier for a space radar program. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Grenier, K. and Pons, P. and Plana, R. and Cazaux, Jean-Louis and Boulanger, C. and Parra, T. and Graffeuil, J. (2000) Highly compact micro-machined coplanar bandpass filter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Colantonio, P. and Giannini, F. and Leuzzi, G. and Limiti, E. (2000) IMD Performances of Harmonic Tuned Microwave Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ladbrooke, P.H. and Bridge, J.P. and Goodship, N.J. and Battison, D.J. (2000) Improving understanding of the RF circuit behaviour of contemporary semiconductor devices through fast-sampling I (V)Curve tracer measurement. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Kim, S-O. and Velling, P. and Agethen, M. and Reimann, Th. and Prost, W. and Tegude, F.-J. (2000) InP-BASED HBT with graded InGaAlAs BASE layer grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Blanck, H. and Riepe, K.J. and Doser, W. and Auxemery, P. and Pons, D. (2000) Industrial GaInP/GaAs Power HBT MMIC Process. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bue, F. and Gaquière, C. and Hue, X. and Boudart, B. and Crosnier, Y. and De Jaeger, J.C. and Carnez, B. and Pons, D. (2000) Influence of recess and epilayers in the 26 – 40 GHz band HEMT’s intermodulation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Blondy, P. and Baleras, F. and Cros, D. and Massit, C. and Guillon, P. and Zanchi, C. and Lapierre, L. and Sombrin, J. (2000) Integrated Millimeter-Wave Silicon Micromachined Filters. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ageeva, N. N. and Bronevoi, I. L. and Krivonosov, A. N. (2000) Interconnection between the picosecond stimulated recombination emission and the kinetics of dense hot electron-hole plasma in GaAs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ulian, Patrice and Leveque, Hervé and Recly, Agnes and Cayrou, Jean-Christophe and Cogo, B. and Cazaux, Jean-Louis (2000) KA-BAND equipment assembly for multimedia satellite payloads. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Stevens, K.S. and Welser, R.E. and Chaplin, M. and Lutz, C.R. and Pan, N. (2000) Ledge Design of InGaP Emitter GaAs Based HBTs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Whelan, C.S. and Marsh, P.F. and Lardizabal, S.M. and Hoke, W.E. and McTaggart, R.A. and Kazior, T.E. (2000) Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cojocaru, Vicentiu I. and Brazil, Thomas J. (2000) Low frequency dispersion effects on the input characteristics of microwave FETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ferrero, A. and Ghione, G. and Mantione, F. and Nespola, A. and Pensa, S. and Pirola, M. (2000) MM-wave on-wafer characterization of electro-optic devices: a new, simple approach. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Enz, Christian (2000) MOS Transistor Modeling for RF IC Design. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Grzegorczyk, Tomasz M. and Zurcher, Jean-François and Renaud, Philippe and Mosig, Juan R. (2000) Micromachined Horn Antenna Operating at 75 GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mann, C.M. (2000) Micromachining in Terahertz technology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Esashi, M. (2000) Microsystems by Bulk micromachining. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mounaix, P. and Arscott, S. and David, T. and Podevin, F. and Mélique, X. and Lippens, D. (2000) Microtechnologies for the monolithic fabrication of mm and submm non linear devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tan, Guan-Leng and Rebeiz, Gabriel M. (2000) Microwave Absorptive MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Schaffner, James H. and Loo, Robert Y. and Quan, Clifton and Allison, Robert C. and Pierce, Brian M. and Livingston, Stanley W. and Schmitz, Adele E. and Hsu, Tsung-Yuan and Sievenpiper, Daniel F. and Dolezal, Frank A. and Tangonan, Gregory L. (2000) Microwave Components with MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Goffioul, M. and Raskin, J.-P. and Vanhoenacker-Janvier, D. (2000) Microwave Integrated CMOS Oscillators on Silicon-on-insulator Substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Comparini, M.C. and Giubilei, R. and Tranquilli, P. (2000) Microwave equipment for navigation Overlay (NOS) service. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sajin, George and Matei, Elena and Marcelli, Romolo (2000) Microwave tunable straight edge resonator on silicon membrane. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cidronali, A. and Collodi, G. and Santarelli, A. and Vannini, G. and Toccafondi, C. (2000) Millimeter-wave FET modeling based on a frequency extrapolation approach. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ohata, Keiichi (2000) Millimeter-wave IC packaging technology-state of the art and future trends. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Garlapati, Akhil and Prasad, Sheila (2000) Modeling of Current-gain Collapse in Multi-finger HBT ’s. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sacconi, Fabio and Di Carlo, A. and Della Sala, F. and Lugli, P. (2000) Modeling of GaN-based heterostructure devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mahmood, M.R. and Hu, Z.R. (2000) Modelling of 3D Multilayer Coplanar Waveguide Structure with Incorporated Wideband Vertical Interconnection. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Galwas, Bogdan A. and Dawidczyk, Jaroslaw and Chyzh, Aleksander and Malyshev, Sergei A. (2000) Modelling of responsivity of INP-PIN photodiode for studying optical-microwave frequency conversion processes. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mokerov, V.G. and Fedorov, Yu.V. and Hook, A.V. and Velikoski, L.E. (2000) Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zoschg, Dietmar and Wilhelm, Wilhelm and Knapp, Herbert and Aufinger, K. and Bock, Josef and Meister, T.F. and Wurzer, Martin and Wohlmuth, Hans-Dieter and Scholtz, Arpad L. (2000) Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ziegler, Volker and Gässler, Christoph and Wölk, Claus and Deufel, Reinhard and Berlec, Franz-Josef and Dickmann, Jürgen and Käb, Norbert and Schumacher, Hermann (2000) Monolithic integration of metamorphic pin DIODES and HFETs for heterointegrated MMICs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Vindevoghel, J. and Descamps, P. (2000) Narrowband active GaAs MMIC filters in K-band. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Gasquet, D. and Nativel, L. and Arcambal, C. and Castagné, M. and Dhondt, F. and Mazari, B. and Eudeline, P. (2000) Near-field measurement of microwave active devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Boulanger, C. and Lapierre, Luc and Gizard, Francis (2000) New cold FET I-Q linear vector modulator topology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Malmqvist, Robert and Gustafsson, Andreas and Danestig, Magnus and Ouacha, Aziz and Hagelin, Sven and Rudner, Staffan (2000) Noise and Intermodulation Properties of Tunable Recursive Active MMIC Filters for Future Adaptive On-chip Radar Receivers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zirath, Herbert and Sakalas, Paulius and Miranda, Jose Miguel (2000) Noise performance of a ground gate wideband MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

De Dominicis, M. and Giannini, F. and Limiti, E. and Saggio, G. (2000) Novel 4-points input pattern for large band noise measurements. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Muldavin, Jeremy B. and Rebeiz, Gabriel M. (2000) Novel Series and Shunt MEMS Switc Geometries for X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Giannini, Franco and Leuzzi, Giorgio and Limiti, Ernesto and Morgia, Fabio (2000) Optimum non-linear design of active microwave mixers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Dubuc, D. and Parra, T. and Graffeuil, J. (2000) Original topology of GaAs-PHEMT mixer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rodriguez-Tellez, J. and Fernandez, T. and Mediavilla, A. and Tazon, A. (2000) Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mottet, B. and Sydio, c. and Hartnagel, H.L. (2000) Pulsed Electrical Stress Techniques for the Detection of Non-thermal Lifetime-Problems with Semiconductor Devices and their IC’s. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bazin, G. and Gilles, J.P. and Crozat, P. and Megherbi, Souhil (2000) RF MEMS: Silicon micro-mechanical capacitive structures. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Colantonio, P. and Giannini, F. and Leuzzi, G. and Limiti, E. (2000) RF versus Microwave High Efficiency PA Design. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hartnagel, H.L. and Lin, C.I. and Rodriguez, M. and Ichizli, V. and Saglam, M. and Szeliga, P. (2000) Recent Development in Device Technology for Integrated THz-Circuits. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Landen, Lars and Fager, Christian and Zirath, Herbert (2000) Regenerative GaAs MMIC Frequency Dividers for 28 and 14 GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Dorofeev, A.A. and Matveev, Yu.A. and Chernavskii, A.A. (2000) Researches of two and three-output structures with effect of resonant tunneling. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Aja, B. and de la Fuente, M.L. and Garcia, J.A. and Pascual, J.P. and Artal, E. (2000) Resistive Monolithic Q-Band HEMT Mixer for MVDS Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

David, S. and Batty, W. and Panks, A.J. and Johnson, R.G. and Snowden, C.M. (2000) Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulations of microwave power FETs and MMICs, on timescales suitable for CAD. This is achieved by combining an original, analytical thermal resis-tance matrix model of time-dependent heat flow in a power FET or MMIC, with a fully physical electrical CAD model for transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Brookbanks, D. M. (2000) Self consistent modelling of PHEMT devices for millimeter wave small signal, noise and power applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cetronio, A. and Giannini, F. and Lanzieri, C. and Leuzzi, G. (2000) Self-aligned gate technology for analogue and digital GaAs integrated circuits. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Beaudin, G. (2000) Semi and super-conducting technologies for the millimeter and submillimetre wave applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Erratico, Pietro (2000) Silicon technologies for RF applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Marchand, Philippe and Gouessant, Philippe (2000) Single Chip 58 GHz Radio Relay Front End Philippe Marchand, Philippe Gouessant. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Wieszt, A. and Dietrich, R. and Lee, J.-S. and Vescan, A. and Leier, H. and Piner, E.L. and Redwing, J.M. and Sledzik, H. (2000) Small signal and power performance of AlGaN/GaN HFETs grown on s.i.SiC. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

de Hek, A.P. and Hunneman, P.A.H. (2000) Small sized high-gain PHEMT high-power amplifiers for X-BAND applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Costantini, A. and Vannini, G. and Filicori, F. and Santarelli, A. (2000) Stability analysis of multi-transistor microwave power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rodwell, Mark and Betser, Y. and Jaganathan, S. and Mathew, T. and Sundararajan, PK and Martin, S.C. and Smith, R.P. and Wei, Y. and Urteaga, M. and Scott, D. and Long, S. (2000) Submicron lateral scaling of HBTs and other vertical-transport devices:towards THz bandwidths. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sleiman, A. and Di Carlo, A. and Tocca, L. and Fiordiponti, R. and Lugli, P. (2000) Tayloring the Breakdown Voltage in High Electron Mobility Transistor: Theoretical and Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Kauffmann, N. and Blayac, S. and André, P. and Riet, M. and Benchimol, J.L. and Konczykowska, A. (2000) Technological and geometrical optimisation of InP HBT driver circuit. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Borgarino, M. and Plana, R. and Graffeuil, J. and Cattani, L. and Fantini, F. (2000) The Reliability of III-V semiconductor Heterojunction Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Jarosik, Norman (2000) The Use of Cryogenic HEMT Amplifiers in Wide Band Radiometers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bietti, I. and Svelto, F. and Castello, R. (2000) Towards fully integrated CMOS RF receivers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ladbrooke, P.H. and Bridge, J.P. (2000) Tracking sic FET developments with a FET simulator. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Roussel, L. and Duperrier, C. and Campovecchio, M. and Lajugie, M. (2000) Two Octave Phemt Power Amplifier for EW Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Radisic, Vesna and Weinreb, Sander and Micovic, Miro and Hu, Ming and Janke, Paul and Ngo, Catherine and Harvey, Duane and Matloubian, Mehran and Nguyen, Loi (2000) Ultra broadband low power MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Pospieszalski, Marian W. and Wollack, Edward J. (2000) Ultra-low-noise,inp field effect transistor amplifiers for radio astronomy receivers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 October 2000, Paris.

Shinohara, K. and Yamashita, Y. and Hikosaka, K. and Hirose, N. and Kiyokawa, M. and Matsui, T. and Mimura, T. and Hiyamizu, S. (2000) Ultra-short T-shaped gate fabrication technique for InP based HEMTs with high ft (> 300 GHz) and their MMIC applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Meng, C.C. and Chen, J. W. and Chang, C.H. and Chen, L.P. and Lee, H.Y. and Kuan, J.F. (2000) Using Average RF Gate and Drain Currents to Determine Gain Compression Mechanisms for Narrow-recessed and Wide-recessed MESFETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Serru, V. and Leclerc, E. and Huin, F. and Thuret, J. and Denis, S. (2000) Very high power added efficiency PHEMT amplifiers for GSM and DCS 1800 applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Snowden, Christopher M. (2000) Very high volume GaAs MMICs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cai, Yongming and Katehi, Linda P.B. (2000) Wide Band Series Switch Fabricated Using Metal As Sacrificial layer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Boulanger, C. and Lapierre, L. and Gizard, F. and Zanchi, C. and Lesthievent, G. (2000) X BAND MMIC direct 8 Phase Shift Keying modulator for high data rate earth observation applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Darbandi, A. and Buret, H. and Michard, F. and Zoyo, M. (1999) 25W L-band power module for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kauffmann, N. and Andre, P. and Burie, J.R. and Duchenois, A. M. and Riet, M. and Konczykowska, A. (1999) 44 Gb/s InP DHBT MUX-Driver IC for external laser modulation. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Werthof, A. and Grave, T. and Kellner, W. (1999) 90 GHz amplifier fabricated by a low cost PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Hoel, Virginie and Boret, Samuel and Grimbert, Bertrand and Aperce, Gilles and Bollaert, S. and Happy, Henri and Wallart, Xavier and Cappy, A. (1999) 94-GHz low noise amplifier on InP in coplanar technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Chang, E. Y. and Lee, Di-Houng and Lai, Yeong-Lin and Chen, S.H. (1999) A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bué, F. and Gaquiere, C. and Crosnier, Y. and Carnez, B. and Quentin, P. (1999) A 26-40 GHz on wafer intermodulation measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

de Hek, A.P. and Hunneman, P.A.H. and Demmler, M. and Hülsmann, A. (1999) A compact broadband high efficient X-Band 9-Watt PHEMT MMIC high-power amplifier for phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rasa, F. and Remonti, M. (1999) A large-band 2.8-4.25 / 5.6-8.5 GHz frequency doubler MMIC for digital radio link applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rodríguez Tellez, J. and Mediavilla, A. and Fernández, T. and Tazón, A. (1999) A method for characterising frequency dispersion and thermal effects independently in GaAs FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bobbo, B. M. and Giorgio, A. and Passaro, V. M. N. and Perri, A. G. and Pesare, M. (1999) A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Laloue, A. and Mallet-Guy, B. and Mons, S. and Laporte, E. and Quéré, R. and Soulard, M. (1999) A new approach of the linear and non linear stability analysis of PHEMT based on a finger-distributed generic non linear model and electromagnetic deembedding. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Nawaz, M. and Persson, S. H. M. and Zirath, H. and Choumas, E. and Mellberg, A. and Kollberg, E. L. (1999) A new reliable fabrication-process for InP based HEMTs and MMICs with gate length from 0.06 to 0.2 um. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Cidronali, A. and Santarelli, Alberto and Collodi, G. (1999) A novel approach to scalability for distributed FET models. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Frank, B.M. and Freundorfer, A.P. and Antar, Yahia M.M. (1999) A novel common gate mixer for wireless applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Klaassen, Andreas and Reber, Rolf and Ludwig, Michael (1999) A precision T/R module for X-Band SAR applications with a transmit chain in HBT-Technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Davies, I. and Phillips, W.A. and Humpston, G. and Niman, M.J. (1999) A review of flip-chip GaAs circuits, models, interconnections and modelling techniques in use at Marconi. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Giannini, Franco and Limiti, Ernesto and Orengo, Giancarlo and Scucchia, Lucio (1999) A systematic approach to microwave amplifier broadband matching. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Pesare, M. and Giorgio, A. and Passaro, V. M. N. and Perri, A. G. (1999) A two-dimensional electrothermal model for GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Colantonio, P. and Giannini, Franco and Leuzzi, Giorgio and Limiti, Ernesto (1999) A unified approach to high efficiency microwave power amplifier design. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zolper, J. C. (1999) AlGaInN power transistors: status and prospects. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Adesida, I. and Ping, A. T. and Redwing, J. (1999) AlGaN/GaN heterostructure field-effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Wang, K. L. (1999) AlGaN/GaN on SiC HFETs for microwave power amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zirath, Herbert and Landen, Lars and Fager, Christian (1999) An active millimeter wave MMIC frequency doubler with high spectral purity and low power consumption. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

de la Fuente, M.L. and Pascual, J. P. and Gonzalez, F. J. and Artal, E. (1999) Broadband GaAs MMIC downconverter with very low intermodulation for TV applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Lee, Thomas H. (1999) CMOS RF integrated circuits: past, present and future (invited). In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rao, Rapeta V.V.V.J. and Chong, T.C. and Tan, L.S. and Lau, W.S. and Alphones, Arokiaswami (1999) Change of gm(f) in LT-GaAs and LT-Al0.3Ga0.7As MISFETs with thermal stress. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Suárez, Almudena and Sancho, Sergio (1999) Chaos in Si MMIC oscillators. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ghione, G. and Goano, M and Omegna, G. and Pirola, M. and Bosso, S. and Frassati, D, and Perasso, A. (1999) Characterization and optimization of CPW electro-optic modulators for microwave and MM-wave applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Goel, Ashok and Bergstrom, Sarah and Mojica-Campbell, Aleli (1999) Computer simulation of GaAs and SOI devices using TCAD tools: an REU project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Horio, K. and Wakabayashi, A. (1999) Computer-aided analysis of surface-state effects on kink phenomena in GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Makihara, Chihiro and Yoshida, Katsuyuki (1999) Development of millimeter-wave package for consumer market. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gebara, Edward and Heo, Deukhyoun and Laskar, Joy and Harris, Mike (1999) Development of temperature dependent load-pull analysis techniques. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Beilenhoff, K. (1999) Device models for (M)MIC circuit design - benefits and limitations. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Tsai, Huan-Shang and Roux, Pascal and Giguet, Jean Louis and Chen, Young-Kai (1999) Dual-function MMIC for microwave digital radio. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sim, Steven K. H. and Mutamba, Kabula and Herbert Li, E. (1999) Dual-wavelength of 1.3um and 1.55um AlGaSb/GaSb asymmetric quantum-well laser. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Filicori, Fabio and Santarelli, Alberto and Traverso, Pierandrea and Vannini, Giorgio (1999) Electron device model based on nonlinear discrete convolution for large-signal circuit analysis using commercial CAD packages. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sozzi, G. and Dieci, D. and Menozzi, R. and Lanzieri, C. and Tomasi, T. and Canali, C. (1999) Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sleiman, A. and Rossi, L. and Di Carlo, A. and Tocca, L. and Bonfiglio, A. and Brunori, M. and Lugli, P. and Zandler, G and Meneghesso, G. and Zanoni, E. and Canali, C. and Cetronio, A. and Lanzieri, M. and Peroni, M. (1999) Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gottwald, Frank (1999) Extended noise theory of GaAs-schottky-diodes. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ladbrooke, P.H. (1999) FET physics-based, MMIC yield analysis CAD tools and capabilities demonstrated within the EDGE project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Drevon, C. and Cazaux, Jean-Louis (1999) From full hybrid to 3D microwave packaging for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Torres, Jorge Alves and Freire, J. Costa (1999) GaAs MMIC switches for PCs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rocchi, Marc (1999) GaAs custom MMIC foundry service : a business view. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Achouche, M. and Kraus, S. and Spitzbart, T. and Hähle, S. and John, W. and Mai, M. and Rentner, D. and Wolter, P. and Wittrich, H. and Bergunde, T. and Brunner, F. and Kurpas, P. and Richter, E. and Weyers, M. and Würfl, J. and Tränkle, G. (1999) GaAs microwave power HBTs for mobile communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Cheskis, D. and Huang, C. (1999) GaAs optoelectronic integrated circuits for gigabit ethernet. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Acciari, G. and Giannini, F. and Leuzzi, G. (1999) Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Delage, S. L. (1999) Hero's project as an example of european programme on RF device improvement. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Hue, X. and Boudart, B. and Bonte, B. and Crosnier, Y. (1999) High linearity of double channel GaAs pHEMT using a very high selective wet etching. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zhuravlev, K.S. and Toropov, A.I. and Shamirzaev, T.S. and Bakarov, A.K. and Rakov, Yu.N. and Myakishev, Yu. B. (1999) High purity AlGaAs grown by molecular beam epitaxy. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kohn, E. and Daumiller, I. (1999) High temperature performance of gan-based HFET's. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ageeva, N. N. and Bronevoi, I. L. and Kalafati, Yu. D. and Krivonosov, A. N. (1999) High-speed optoelectronic effects arising under intensive picosecond stimulated emission in GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Higgins, J. Aiden (1999) III-V technologies: a growth industry for the 21st century. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bertone, D. (1999) In-situ etching technique, inside MOCVD reactor, for fabrication of III-V optoelectronic devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Alekseev, Egor and Eisenbach, Andreas and Pavlidis, Dimitris (1999) Interface properties and electrical characteristics of III-V nitride-based MISFETS. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Comparini, M. and Feudale, M. and Ranieri, P. and Suriani, A. and Gatti, G. and Auxemery, P. (1999) KA band satellite equipment using european GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Marques, M. G. and Tam, K. W. and Caldinhas Vaz, J. and Costa Freire, J. (1999) MMIC lumped and transversal filter with LC tuned amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Heuken, M. and Juergensen, H. (1999) MOCVD production tool for high speed electronic devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bland, Stephen W. (1999) Materials for GaInP/GaAs HBT's performed within the GAMMA project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ohata, Keiichi (1999) Millimeter-wave packaging and module technology developments in Japan. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kojucharow, K. and Kaluzni, H. and Sauer, M. and Schaffer, Ch. and Finger, A. (1999) Millimeter-wave wireless LAN based on simultaneous upconversion technique of optical WDM channels. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Camiade, M. and Brandeau, J.P. and Domnesque, D. (1999) Mm-wave front-end developed within the on-going AWARE/LOCOMOTIVE projects for automotive applications at 77GHz. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rao, Rapeta V.V.V.J. and Chong, T.C. and Tan, L.S. and Lau, W.S. and Liou, JJ. (1999) Modeling of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Dobes, Josef (1999) Modeling the GaAs nonlinear microwave circuits using the CIA program. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Frounchi, Javad and Harrold, Steve J. (1999) Multigigabit programmable comb decimator implemented in GaAs/AlGaAs HEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Tiginyanu, I.M. and Hartnagel, H.L. (1999) Nanoporous membranes and heterostructures on III-V compounds for micro- and optoelectronic applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Teyssier, J.P. and Barataud, D. and Laloue, A. and Bouysse, Ph. and Quere, R (1999) Nonlinear characterization of microwave transistors by the means of pulsed I(V) and pulsed S-Parameters measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Schreurs, Dominique (1999) Overview of non-linear device modelling methods based on vectorial large-signal measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Grajal de la Fuente, Jesus and Krozer, Viktor and Campo, Alfonso and SchüBler, Martin (1999) Performance limitations of power HBT devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Van vliet, F.E. and Stulemeijer, J. and Benoist, K.W. and Smit, M.K. (1999) Photonic integration for phased-array applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kasper, E. and Reitemann, G. (1999) Physics of future ultra high speed transistors - Part II: new concepts. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kasper, Erich and Eberhardt, Jochen (1999) Physics of future ultra high speed transistors - part 1: HBT. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

GUY, A. and GALY, C. and VILLEMAZET, J.F. and SAUTEREAU, J.F. and Cazaux, Jean-Louis (1999) Power amplifier linearization using cartesian feedback. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Betti-Berutto, A. and Satoh, T. and Khandavalli, Chandra and Giannini, Franco and Limiti, Ernesto (1999) Power amplifier second harmonic manipulation: mmWave application and test results. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Niman, Murray (1999) Precision wideband flip-chip modelling. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Poplavko, Yuri and Ilchenko, Michael and Pereverzeva, Larissa and Prokopenko, Yuri and Ivaschuk, Anatoliy (1999) Pyroelectric-like response in semi-insulating III-V crystal. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ponchak, George E. (1999) RF transmission lines on silicon substrates. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Verspecht, Jan and Schreurs, Dominique (1999) Recent advances in the measurement and black-box modelling of high-frequency components. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ferrero, A. and Madonna, GianLuigi and Pisani, Umberto (1999) Recent technological advances for modular active harmonic load-pull measurement systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Pattison, L. and Wong, Y.L. and Linton, D. (1999) Scaleable coplanar waveguide transmission lines and discontinuities on gallium arsenide MMIC substrates. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rudolph, M. and Doerner, R. and Richter, E. and Heymann, P. (1999) Scaling of GaInP/GaAs HBT equivalent-circuit elements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Möller, M. and Rein, H.-M. and Gottwald, E. and Meister, T.F. (1999) SiGe bipolar ICs with data rates from 40 to 60 Gb/s for future fiber-optic systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Asif Khan, M. and Shur, M. S. and Gaska, R. (1999) Strain energy band engineering in AlGaInN/GaN heterostructure field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Deyhimy, Ira and Tomasetta, Lou (1999) Technologies for Telecom & Datacom data transmissions. And the winner is: just plain mesfets. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Würfl, J. and Hilsenbeck, J. and Nebauer, E. and Trankle, G. and Obloh, H. (1999) Technology and thermal stability of ALGAN/GAN HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Delage, S. L. and Cassette, S. and Poisson, M.-A.diForte and Floriot, D. and Chartier, E. and Etienne, P and Galtier, P. and Landesman Thomson, J.-P. (1999) The correlation between material properties and HBT reliability. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gurusinghe, K. K. M. N. and Andersson, T. G. and Premaratne, K. (1999) The effect of the first barrier thickness on resonance tunnelling and carrier accumulation in undoped single quantum well infrared photodetectors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Larson, Lawrence E. and de Vreede, Leo C.N. (1999) The impact of silicon technology on future microwave systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Jacobs, B. and Karouta, F. and Kwaspen, J.J.M. and Hageman, P.R. and Kaufmann, L.M.F. and Larsen, P.K. (1999) The processing and scalability of AlGaN/GaN HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Deborgies, F. and Lemoine, Thierry and Mancuso, Yves (1999) Three-dimensional packaging technologies for highly integrated T/R modules. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gudmundson, Mikael (1999) WCDMA - The third generation radio access. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Landstorfer, F. M. (1999) Wave propagation models for the planning of mobile communication networks. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zoyo, M. and Cartier, N. and Touchais, J.Y. and Maynadier, P. and Midan, E. and Sgard, P. and Buret, H. and Peschoud, M. (1999) X-band 22W SSPA for earth observation satellite. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bollaert, S. and Cordier, Y. and Happy, H. and Zaknoune, M. and Lepilliet, S. and Cappy, A. (1998) 0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Ulian, Patrice and Monfraix, Philippe and George, Sebastien and Tronche, Christian and Drevon, C. and Cazaux, Jean-Louis (1998) 3D active modules for high integration active antennas. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Hourany, Jean and Bellaiche, Joseph and Andre, Jean-Pierre and Delhaye, E. (1998) 40 Gb/s ICs using a production PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Filicori, F. and Santarelli, A. and Vannini, G. and Monaco, V.A. (1998) A "backgating" model including self-heating for III-V FETs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Iqbal, A. and Darwazeh, I. Z. (1998) A 23 GHz baseband HBT distributed amplifier for optical communication systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

de Boer, A. and van der Graaf, M.W. and de Hek, A.P. and Tieman, T.C.B. (1998) A GaAs multi-function X-band MMIC for space-based SAR application with 7 BIT phase and amplitude control. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Kashiwa, Takuo and Katoh, Takayuki and Ishida, Takao and Kurusu, Hitoshi and Mitsui, Yasuo (1998) A Ka-band high power monolithic HEMT VCO using a sub-resonator circuit with phase control architecture. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Prieto, D. and Rogeaux, E. and Villemazet, J.F. and Cazaux, Jean-Louis and Parra, T. and Graffeuil, J (1998) A balanced uniplanar active MMIC combiner/divider with improved power capability. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Tempel, R. and Lütke, W. and Wolff, I. (1998) A compact coplanar MMIC Mixer For 2.4 GHz transponder systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Borgarino, M. and Menozzi, R. and Tasselli, J. and Marty, A. (1998) A comparison between HBT small-signal model optimization using a genetic algorithm and direct parameter extraction. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Kwaspen, J.J.M. and Lepsa, M.I. and van de Roer, Th. G. and Heyker, H.C. and van der Vleuten, W.C. (1998) A full alternative for the RTD quantum-inductance equivalent-circuit model. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Valkov, Stéphane and Pouvil, Pierre and Temcamani, Farid and Leblanc, Rémy (1998) A fully CAD consistent model of MESFETs and HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Stadius, K. and Holmberg, J. and Kaunisto, R. and Alinikula, P. and Porra, V. (1998) A monolithic temperature compensated 1.6 GHz VCO. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Kim, Dae-Hyun and Yang, Sung-Gi and Ryu, Gi-Hyon and Seo, Kwang-Seok (1998) A new FET extrinsic parameter extraction method at pinch-off bias utilizing gate-width scaling property. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Fernandez, T. and Garcia, J. Angel and Tazón, A. and Mediavilla, A. and García, J.L. and Pedro, J.C. (1998) A new Ids large signal continuous model for HEMT devices valid under static and dynamic conditions. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Mouzannar, W. and Billonnet, L. and Jarry, B. and Guillon, P. (1998) A new design concept for realising highly tunable microwave filters using recursive principles. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Hoel, V. and Bollaert, S. and Wallart, X. and Grimbert, B. and Lepilliet, S. and Cappy, A. (1998) A new gate process for the realization of lattice - matched HEMT on InP for high yield MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Rasa, F. and Pagani, M. and Gabbrielli, B. (1998) A new highly linear MMIC single side-band converter for digital radio links. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

de Hek, A.P. (1998) A novel fast search algorithm for an active load-pull measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Kim, Juno and Itoh, Tatsuo (1998) A novel microstrip to coplanar waveguide transition for flip-chip interconnection using electromagnetic coupling. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Schmale, Ingo and Kompa, Günter (1998) A novel thermal resistance extraction technique for temperature-dependent FET modelling. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Adolph, M. and Dreher, H. and Höfer, G. and Ludwig, M. and Rieger, R. and Stutzig, U. (1998) A precision T/R module for X-band SAR applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Filicori, F. and Vannini, G. and Santarelli, A. and Traverso, P. (1998) A signal-theory based approach for the approximation of electron device characteristics. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Khandavalli, C. and Betti-Berutto, A. and Lum, G. and Fukaya, J. and Satoh, T. and Mitani, E. (1998) A tunable 125 mW K-band MMIC power amplifiers for point to point radio application. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Bonani, F. and Donati Guerrieri, S. and Ghione, G. and Pirola, M (1998) A unified, CAD-oriented approach for the physics-based large-signal conversion and noise modelling of microwave and mm-wave semiconductor devices. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Follmann, R. and Tempel, R. and Herrmann, J. and Sporkmann, T. and Wolff, I. (1998) Accurate new scaling routines for any table/function based FET model including temperature and noise behaviour. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

García, José A. and Pedro, José C. and Carvalho, Nuno B. and Mediavilla, Angel and Tazón, Antonio (1998) Accurate nonlinear resistive FET modeling for IMD calculations. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Brazil, Thomas J. (1998) Achievements of european collaboration in high-frequency CAD within the EDGE programme. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Monteiro, Paulo P. and Antunes, Pedro L. and Lima, Mario J. and da Rocha, Jose F. (1998) Adjustable pulse shaping filter with active impedance matching for optical soliton communication systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Adelseck, B. and Schroth, J. and Gühl, R. and Braun, P. and Quentin, P. and Koblowski, S. (1998) Advanced GaAs MMIC key components for telecommunication modules. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Lanzieri, C. and Menozzi, R. and Dieci, D. and Peroni, M. and Cetronio, A. and Canali, C. (1998) AlGaAs/GaAs HFET power devices for J-band applications: performance dependence on gate recess geometry. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Cardarelli, R. and Ciorciolini, S. and Chiostri, V. and Orengo, G. (1998) An 8-channels GaAs IC front-end discriminator for RPC particle detectors. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Peniket, N. A. and Davies, I. and Davies, R. A. and Marsh, S. P. and Wadsworth, S. D. and Wallis, R. H. (1998) An advanced GaAs/lnGaP HBT MMIC process. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Di Martino, A. and Pisa, S. and Tommasino, P. and Trifiletti, A. (1998) An extraction procedure for MESFET'S and HEMT'S non-linear model determination. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Farina, M. and Rozzi, L. and De Leo, R. and Rozzi, T. (1998) Analysis of propagation on MODFET-type coplanar waveguide. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Palazuelos, Enrique and Barahona, Fco. Javier and Suarez, Almudena and Portilla, Joaquin (1998) Bifurcation analysis of synchronized microwave circuits using commercial software. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Stratakos, George E. (1998) CAD design of an active MMIC circulator at 21-26 GHz frequency band. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Stubbs, Malcolm G. (1998) Canadian GaAs IC developments for communication applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Gaquiere, C. and Bourcier, E. and Bonte, B. and Crosnier, Y. (1998) Characterisation in 26 - 40 GHz band of HEMT's with an active load pull system. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Masera, G. and Piccinini, G. and Ruo Roch, M. and Zamboni, M. (1998) Charge injection E/D MESFET structures for high speed and low power applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Cojocaru, Vicentiu I. and Brazil, Thomas J. (1998) Comparison between intermodulation distortion prediction capabilities of the COBRA model and of other non-linear FET models. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Hartnagel, H.L. and Arslan, D. and Brandt, M. and Dehe, A. and Mutamba, K. and Vogt, A. (1998) Compound semiconductor microsensors for applications in mechanical engineering. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Sporkmann, T. and Naghed, M. and Verweyen, L. and Haydl, W.H. and Schlechtweg, M. (1998) Coplanar MMICs - The future for mass production! In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Reynoso-Hernandez, J. A. and Plana, R. and Escotte, L. and Graffeuil, J. (1998) Correlation between kink effect and frequency dispersion in pseudomorphic HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Meneghesso, G. and Paccagnella, A. and Martines, G. and Garat, F. and Crosato, C. and Zanoni, E. (1998) DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Bessemoulin, A. and Algani, C. and Alquié, G. and Fouad Hanna, V. (1998) Design and characterization of a 67 GHz 0.3 um AlGaAs/GaAs/AlGaAs HEMT monolithic amplifier in coplanar waveguide technology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Lima, Mario J. and Monteiro, Paulo P. and Matos, J. Nuno and da Rocha, Jose F. and Teixeira, Antonio (1998) Design and performance assessment of a multigigabit clock-recovery circuit. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Schaeffner, R. and Eckert, G. and Nuetzel, T. (1998) Design and technology of T/R modules for phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Jansen, R.H. and Aachen, A. John (1998) Design-oriented electromagnetic modeling for MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Laskar, J. and Murti, M.R. and Yoo, S.Y. and Gebara, E. and Harris, H.M. (1998) Development of complete on-wafer cryogenic characterization: S-parameter, noise-parameter and load-pull. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Majerus, Michael (1998) Device characterization using the Automated Tuner System "ATS". In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Lapergue, T. and Lapierre, L. and Graffeuil, J. and Tronche, C. (1998) Driver for phase shift keying modulator using a multilevel MMIC technology for K-band space applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Norton, Mark E. and Brazil, Thomas J. (1998) Effects of self-heating on parameter extraction for GaInP/GaAs HBT nonlinear models. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Tsironis, Christos and Dubouil, Dominique and Allard, Francois (1998) Harmonic load and source pull tuners for millimeterwave frequencies. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Greiling, Paul and Nguyen, Loi (1998) High performance device technologies for future communications satellites. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Comparini, M.C. and Feudale, M. and Ranieri, P. and Suriani, A. (1998) Ka band GaAs MMIC chipset for satellite communication payloads. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Fennelly, Michael and Wandrei, David (1998) Load Pull measurements for GSM and CDMA power modules. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Verspecht, Jan and Van Esch, Patrick (1998) Measuring, black-box modelling and simulating transistor nonlinear behavior: nonlinear S-parameters can do the job! In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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van Saders, John (1998) Miniaturized receiver modules for wireless communications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Chennafi, Noureddine and Rumelhard, Christian and Gonzalez, Carmen and Thuret, Julien (1998) Modelling the photoresponse characteristics of InP/InGaAs heterojunction phototransistor with different incident directions of beam light. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Gaubert, J. and Ouslimani, A. and Hafdallah, H. and Medjnoun, M. and Birafane, A. (1998) New large signal electrothermal HBT model with original parameters extraction procedure. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Ouslimani, A. and Gaubert, J. and Hafdallah, H. and Birafane, A. and Pouvil, P. and Leier, H. (1998) New method for determining parasitic access inductances of high frequency on-wafer coplanar heterojunction bipolar transistors. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Barataud, D. and Campovecchio, M. and Teyssier, J.P. and Nebus, J.M. and Quéré, R. and Obregon, J. (1998) New trends of nonlinear modeling for microwave devices in a circuit/system environment. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Van Ress, B.H. and Laghton, D. (1998) Next generation MMIC integration technology for high frequency phase array antennas. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Salameh, D. and Linton, D. (1998) Novel wide bandwidth GaAs sampling MMIC using microstrip based nonlinear transmission line (NLTL) and NLTL shock wave generator design. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Marks, Roger B. (1998) On-wafer millimeter-wave characterization. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Grajal, J. and Krozer, V. and Maldonado, F. and González, E. and Gismero, J. and Lin, C. and Hartnagel, H. L. (1998) Optimization of millimeter frequency multipliers by incorporation of numerical modelling into circuit simulators. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Cirone, R. and Di Mattia, A. and Tursini, M. and Suriani, A. and Comparini, M.C. and Arpesi, P.G. (1998) Packaging solutions in space MCM's and MHIC's. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Castillo-Vázquez, B. and Martin-Guerrero, T.M and Camacho-Peñalosa, C. (1998) Parameter extraction procedure for microwave and millimetre-wave monolithic FET-type devices based on a scalable distributed model. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Krupenin, S. and Blanchard, R. R. and Somerville, M. H. and del Alamo, J. A. and Duh, K. G. and Chao, P. C. (1998) Physical mechanisms limiting the manufacturing yield of millimeter-wave power InP HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Trifiletti, A. and Centurelli, F. and Tommasino, P. (1998) Positive feedback GaAs comparators for SDH/SONET applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Koether, D. and Sporkmann, Th. (1998) Power Pull: an unconditionally stable active Load-Pull measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Zaknoune, M. and Cordier, Y. and Bollaert, S. and Theron, D. and Crosnier, Y. (1998) Power performance capability of metamorphic HEMT on GaAs substrate. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Alm, Roberto (1998) Practical application of GaAs MMIC technology to next-generation 20 / 30 GHz data communication systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Nespola, A. and Goano, M. and Ghione, G. and Haidar, J. (1998) Quasi-3D coupled electro-optical simulation of MQW avalanche waveguide photodetectors. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Schreurs, D. and van der Zanden, K. and Verspecht, J. and De Raedt, W. and Nauwelaers, B. (1998) Real-time measurement of InP HEMT'S during large-signal RF overdrive stress. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Fukuta, Masumi and Hirachi, Yasutake (1998) Recent Development of GaAs MMIC's for Wireless Communication Systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Cordeiro, Jean-Philippe and Costa Freire, J. (1998) Scaling non linear models for low gm MESFETS. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Trew, R.J. (1998) SiC for microwave power applications: present status and future trends. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Henkel, A. and Delage, S. L. and diForte-Poisson, M.-A. and Floriot, D. and Chartier, E. (1998) Single and double heterojunction bipolar transistors in collector-up topology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Tartarin, J.G. and Escotte, L. and Graffeuil, J. (1998) Small-signal model extraction technique dedicated to noise behaviour of microwave HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Marsh, S.P. and Long, A.P. and Wadsworth, S.D. (1998) Statistical techniques for MMIC design sensitivity and chip yield analysis. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Daembkes, Heinrich (1998) Status and future evolution of GaAs technologies and applications for the 5Ghz to the 100GHz frequency domain from european point of view. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Mancuso, Y. (1998) Technological trends for T/R modules. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Bhagavathula, Seshu (1998) The Daimler-Benz research centre in India: an overview. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Myers, Fred (1998) The genesis and development of MMICS-A personal view. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Borgarino, M. and Tartarin, J.G. and Plana, R. and Delage, S. L. and Graffeuil, J. and Fantini, F. (1998) The influence of the emitter orientation on the DC and low frequency noise characteristics of GalnP/GaAs HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Rocchi, Marc (1998) The power amplifier rat race for digital mobilecom applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Valentine, Gary W. and Kastle, Todd A. (1998) The status of T/R module development in the USA. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Giorgio, Agostino and Gina Perri, Anna (1998) Thermal modeling of GaAs FETs for MMICs CAD with modern design techniques. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Kangaslahti, P. and Kalajo, S. and Porra, V. and Jukkala, P. (1998) Unlimited bandwidth TWT predistortion lineariser MMICs for Ku- and Ka-band Operation. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Lahdes, M. and Tuovinen, J. (1998) V-band on-wafer noise parameter measurements. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Clerckx, G. and Verbiest, R. (1997) 26 GHz MMIC linear vector modulator. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Corso, V. and Bastida, E.M. and Finardi, C.A. and Fischer, R.A. and Patiri, V. (1997) 3.5 GHz bandwidth low-cost GaAs IC receiver for 2.5 to 5 Gbit/s optical links. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bartocci, M. and Lanzieri, C. and Peroni, M. (1997) A 0.5-30 GHz monolithic PHEMT amplifier for ESM systems applications. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Orengo, G. and Giannini, F. and Limiti, E. and Cardarelli, R. (1997) A GaAs Equalizer-amplifier for 1 Gbit/s data transmission on coaxial cable up to 200 meters. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Guetre, E. R. and Stubbs, M. G. and Wight, J. S. and Laneve, T. (1997) A GaAs HBT emitter-injected upconverter at Ka-Band. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Avitabile, G. and Cidronali, A. and Salvador, C. and Speciale, M. (1997) A GaAs MMIC phase shifter based on coupled spiral inductors. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bertuccio, G. and Fasoli, L. and Berroth, M. (1997) A SPICE model for the gate current of HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Cojocaru, Vicentiu I. and Brazil, Thomas J. (1997) A comprehensive model verification procedure for general-purpose microwave FET models. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Sommet, R. and Perreai, Y. and Quere, R. (1997) A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Filicori, Fabio and Vannini, Giorgio and Santarelli, Alberto and Monaco, Vito A. (1997) A finite-memory approach to the nonlinear modelling of microwave electron devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Kanan, R. and Hochet, B. and Kaess, F. and Declercq, M. (1997) A low-power GaAs flip-flop. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Pallotta, Andrea and Centurelli, F. and Trifiletti, Alessandro (1997) A monolithic GaAs clock and data recovery circuit for 2.5 Gb/s NRZ data stream. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Schufiler, M. and Statzner, T. and Granero, S. and Hartnagel, H.L. (1997) A new self-aligned technique for HBTs on GaAs using electrolytical deposition of base metal. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Donati Guerrieri, S. and Bonani, F. and Pirola, M. and Ghione, G. and Filicori, F. (1997) A novel approach to yield estimate and IMP performance optimization of microwave devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Pons, D. (1997) A silicon-like process for high volume and low cost GaAs MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Garcia, J. Angel and Mediavilla, Angel and Tazon, Antonio and Garcia, J. Luis and Pedro, J. Carlos (1997) Accurate characterization procedure of FET's reactive nonlinearities for intermodulation analysis. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Streit, Dwight and Tran, Liem and Lai, Richard and Chen, Yaochung and Cowles, John and Kobayashi, Kevin and Oki, Aaron and Block, Thomas and Barksy, Mike and Liu, Po-Hsin and Elliott, Jeff (1997) An InP-based HEMT and HBT MMIC production line. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Masini, Leonardo and Santarelli, Alberto and Vannini, Giorgio and Caliumi, Alberto (1997) An X-band GaAs MMIC down converter suitable for doppler sensors. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Giorgio, Agostino and Perri, Anna Gina (1997) An improved C-V model of GaAs MESFETs for CAD of high speed circuits and broadband amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Gatti, G. (1997) Application of GaAs MMICs in space: an ESA perspective. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Stopponi, G. and Roselli, L. and Ciampolini, P. (1997) Application of LE-FDTD analysis to non-linear circuits, including GaAs devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Giannini, F. and Leuzzi, G. and Serino, A. (1997) Characterisation of active loads for MMIC's. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Rizzoli, Vittorio and Costanzo, Alessandra and Caposciutti, Mauro (1997) Computer-aided design of multiple-varactor broadband VCO's by a novel optimisation algorithm. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Borgarino, M. and Plana, R. and Escotte, L. and Delage, S. L. and Blanck, H. and Fantini, F. and Graffeuil, J. (1997) DC, RF and low frequency noise characterization of C and In/C doped GalnP/GaAs HBT's. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Andre, Ph. and Meghelli, M. and Desrousseaux, P. and Konczykowska, A. and Godin, J. (1997) Decoding and decision circuits for high speed multi-level transmission. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Castaldini, A. and Cavallini, A. and Polenta, L. and Canali, C. and Nava, F. (1997) Defective states in semi-insulating gallium arsenide substrates. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bartolucci, Giancarlo and Marcelli, Romolo and Müller, Alexandru and Simion, Stefan (1997) Diffusion capacitance effect on the response of monolithic nonlinear transmission lines. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Gatti, G. and Locke, S. and Betti-Berutto, A. (1997) Dual chip Ku-band predistortion linearizer. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Fumi, F. and Peroni, M. and Lanzieri, C. and Donati Guerrieri, S. and Pirola, M. and Bonani, F. and Naldi, C. U. (1997) Effects of implanted carbon-buried p-layer on the performance of multifunction self-aligned-gate (MSAG) GaAs MESFET's. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Garcia, J. Manuel and Fernandez, T. and Mediavilla, A. and Tazon, A. and Artal, E. (1997) Electrical equivalent circuit large-signal thermal modelling for GaAs III-V devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Mons, S. and Ducloux, E. and Lecrerc, E. and Thibaudeau, L. and Quéré, R. (1997) Full electrothermal characterization of GaAs FETs. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Huang, Charles (1997) GaAs ICs for 3 volt electronics. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bernal, A. and Ribas, R.P. and Guyot, A. (1997) GaAs MESFET SRAM using a new high speed memory cell. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Kachwalla, Zain (1997) GaAs MMIC research and development in Australia. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Pagani, M. and Remonti, M. and Velati, S. and Panzeri, A. (1997) GaAs MMICs for cost-effective insertion in digital radio link transceivers. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Fukuta, Masumi and Hirano, Yutaka (1997) GaAs device technologies for wireless communication. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Cetronio, A. (1997) GaAs integrated circuits: their evolution in Alenia towards next generation electronic sub-systems. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bertuccio, G. and Canali, C. and Cetronio, A. and De Geronimo, G. and Giannini, F. and Graffitti, R. and Lanzieri, C. and Longoni, A. and Nava, F. and Orengo, G. and Padovini, G. and Peroni, M. (1997) GaAs pixel detectors with integrated electronics: experimental basis and feasibility study. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Donzelli, G.P. (1997) GaAs power devices for radio-link and space applications. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

CHRISTOFOROU, Y. and ROSSETTO, 0. (1997) GaAs preamplifier and LED driver for use in cryogenic and highly irradiated environments. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Lum, Earl J. (1997) GaAs semiconductors: new market opportunities and emerging application trends. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Asmontas, S. and Gradauskas, J. and Seliuta, D. and Suziedelis, A. and Silenas, A. and Valusis, G. (1997) GaAs/AlGaAs heterojunction: a promising detector for infrared radiation. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Mishra, Umesh K. (1997) GaN electronics for microwave power applications. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Matulionis, Arvydas (1997) Hot-electron noise in Hemt channels and other 2-deg structures. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Sumichrast, Lubomir (1997) Iterative full-vectorial "finite differences - variational principle" approach for the determination of the modal spectrum of photonic waveguides. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Plana, R. and Henkel, A. and Delage, S. L. and Parra, T. and Llopis, O. and Graffeuil, J. (1997) Low-frequency noise properties of GalnP/GaAs/GalnP DHBT's. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Comparini, M.C. and Farilla, P. and Feudale, M. and Suriani, A. (1997) MMIC based modules for commercial satellite application. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Rinaldi, Paola and Vannini, Giorgio and Santarelli, Alberto and Filicori, Fabio (1997) Measurement-based nonlinear integral modelling of microwave diodes. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Günel, Tayfun and Yazgan, Bingül (1997) Microwave amplifier design using fuzzy genetic algorithm. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bandler, J.W. and Biernacki, R.M. and Chen, S.H. (1997) Mixed-domain multi-simulator statistical device modeling and yiel-driven design. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Santarelli, Alberto and Vannini, Giorgio and Borgarino, M. and Menozzi, Roberto and Baeyens, Y. and van der Zanden, Koen (1997) Modelling of low-frequency dispersive effects in GaAs and InP HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Orengo, G. and Cardarelli, R. and Chiostri, V. and Johansen, E. (1997) Multichannels GaAs MMIC front-ends for GAS chamber particle detectors. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Decoster, D. and Van de Casteele, J. and Magnin, V. and Gouy, J.P. and Vilcot, J.P. and Harari, J. and Maricot, S. (1997) New III-V transducers for optical microwave and millimeter wave conversion. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Ezzedine, H. and Delmond, M. and Billonnet, L. and Jarry, B. and Guillon, P. (1997) Noise performances optimization of GAAS monolithic microwave active recursive filters using noise wave techniques. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Giannini, F. and Leuzzi, G. and Limiti, E. and Scucchia, L. and Zanetti, F. (1997) Non-linear optimum design of microwave active mixers. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Jager, R. and Grabherr, M. and Jung, C. and Schnitzer, P. and Weigl, B. and Ebeling, K.J. (1997) Optical data transmission over large temperature range using highly efficient oxide-confined GaAs VCSEL sources. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Curti, Franco and Tommasino, Pasquale and Trifiletti, Alessandro (1997) Optimisation criteria of band-pass matching networks for optical receivers in microwave optical links. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Caddemi, A. and Sannino, M. (1997) Optimization of the noise resistance of MESFET's and hemt's for CAD of microwave low-noise amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Brinciotti, A. and Di Maio, G. and Ravasi, G. and Bianchi, S. and Castelli, A. and Scopelliti, C.L. (1997) PHEMT device for microwave power applications based on a double delta doped heterostructure with a stop etch layer. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Lanzieril, C. and Peroni, M. and Cetronio, A. and Costa, L. and Meneghesso, G. and Canali, C. (1997) Performance and reliability of GaAs based power HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Lugli, Paolo and Di Carlo, A. and Ragazzi, Stefano and Rossi, Fausto (1997) Quantum-transport in nanostructured compound semiconductor devices: a generalized monte carlo approach. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Castillo-Vázquez, B. and Martin-Guerrero, T. M. and Camacho-Peñalosa, C. (1997) Scalable distributed model for microwave and millimetre-wave monolithic FET - type devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Feudale, M. and Suriani, A. (1997) Simple slope compensator for Ku-band applications. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Chennafi, Noureddine and Rumelhard, Christian and Gonzalez, Carmen and Thuret, Julien (1997) Simulation and measurement of optoelectronic performances of InP/InGaAs heterojunction bipolar phototransistor. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Rinaudo, S. and Privitera, G. and Ferla, G. and Galluzzo, A. (1997) Small-signal and noise two-dimensional modeling of submicrometer high speed bipolar transistor. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Happy, H. and Bollaert, S. and Foure, H. and Cappy, A. (1997) Theoretical analysis of material and high frequencies performence of metamorphic In Al_As/InGa_As (0.3 < x <0.6) HEMT devices on GaAs substrate. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Reale, Andrea and Di Carlo, A. and Lugli, Paolo (1997) Theoretical and experimental study of coupled asymmetric quantum well optical switches. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Brandt, M. and Schubler, M. and Krozer, V. and Grajal, J. and Hartnagel, H.L. (1997) Transmission line pulse based reliability investigations of HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Caliumi, Alberto and Masini, Leonardo and Christensen, Steen Bak and Aglietti, Marcello (1997) UP-converter for high performance cellular radio test equipment. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Tasker, Paul J. and O'Keefe, Sean S. (1997) Vector corrected non-linear transistor characterization. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Lee, M. and Kim, Y. M. (1996) 10 GHz ultra-high speed GaAs decision circuit design. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Demange, D. and Billard, M. and Lefevre, R. (1996) 20 Gb/s electroabsorption modulator drivers based on 0.2 um GaAs PHEMT. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lopez, J.F. and Sarmiento, R. and Nunez, A. and Eshraghian, K. (1996) A 2ns/660mW GaAs 5Kbit ROM using low leakage current FET circuit (L2FC). In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ghione, G. and Goano, M. and Naldi, C. U. (1996) A CAD-oriented model for the ohmic losses of multiconductor coplanar lines in hybrid and monolithic MIC's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Beaurin, O. and Royannez, P. and Amara, A. and Chaput, J.P. (1996) A GaAs data-path compiler. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Mehnert, Andrew and Burgess, Neil and Eshraghian, K. and Kuczborski, Wojciech and Sarmiento, Roberto (1996) A GaAs video rate morphological processor for image coding and compression. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Pillan, Margherita and Salice, Fabio and Ghione, Giovanni (1996) A constraint generation tool for the design of high frequency integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Alonso, Jose I. and Lopez, Ernesto J. and Mahfoudi, Mustapha (1996) A design technique for GaAs MMIC differential amplifiers based on physical parameters of the foundry. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bressan, M. and Conciauro, G. and Gamba, P. (1996) A fast EM simulator for the wideband analysis of multiconductor buses for MMIC's and high-speed digital circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Baeyens, Y. and Schreurs, D. and Nauwelaers, B. and Van der Zanden, K. and Van Hove, M. and De Raedt, W. and Van Rossum, M. (1996) A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ribas, R.P. and Bernal, A. and Guyot, A. (1996) A low-power differential cross-coupled FET logic for GaAs asynchronous design. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Valkov, S. and Derzkii, D. and Temcamani, F. and Pouvil, P. (1996) A new auto-coherent bias dependent charge model for MESFETs and HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Giannini, Franco and Limiti, Ernesto and Orengo, Giancarlo (1996) A novel single-bias ultra-wideband monolithic pulse amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Tieman, T.C.B. and van Vliet, F.E. and van den Bogaart, F.L.M. and Tauritz, J.L. (1996) A tuneable GaAs MMIC band stop filter at X-band with a novel active inductor. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Le Normand, Jean-Pierre and Alain Perichon, Robert (1996) An active microwave transmission delay equalizer. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bonani, F. and Donati, S. and Ghione, G. and Pirola, M. and Naldi, C.U. (1996) An efficient physics-based CAD approach to evaluate the sensitivity of GaAs devices with respect to process parameters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Plana, R. and Parra, T. and Zanchi, C. and Dienot, J.M. and Gayral, M. and Villard, M.J. and Martin, J.C. and Tizien, P.G. and Graffeuil, J. (1996) An exhaustive non-linear modelling of GaInP/GaAs HBT's - Application to a low phase noise Ku band VCO. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lu, Ke and Snowden, Christopher M. and Pollard, Roger D. (1996) Analysis of collapse patterns in multi-finger power AlGaAs/GaAs HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Gaquiere, C. and Bonte, B. and Piotrowicz, S. and Bourcier, E. and Crosnier, Y. (1996) Analysis of extrinsic element influence on the power performances of HEMT's in the Ka-band. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Guillouard, K. and Wong, M.F. and Fouad Hanna, V. and Citerne, J. (1996) Analysis of lossy transmission lines for GaAs MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ajram, S. and Kozlowski, Romain and Van de Velde, Jean Claude and Salmer, Georges (1996) Application of GaAs power devices to very - high - frequency and high - efficiency DC to DC power converters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Giorgio, A. and Perri, A. G. and Castagnolo, B. (1996) Automatic design of GaAs MESFETs for thermal effect optimization. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Colquhoun, A. and Meinel, Holger (1996) Automotive applications of GaAs components. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lour, Wen-Shiung and Tsai, Jung-Hui and Liu, Wen-Chau and Chen, H. R. (1996) Characteristics of InGaP/GaAs single- heterojunction bipolar transistor with zero potential-spike by δ-doped sheet. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Aniel, F. and Sylvestre, A. and Jin, Y. and Crozat, P. and de Lustrac, A. and Vernet, G. and Adde, R. (1996) Comparative evolutions of short gate InGaAs channel HEMTs on InP and GaAs at cryogenic temperatures. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Meneghesso, Gaudenzio and Paccagnella, Alessandro and Haddab, Youcef and Canali, C. and Zanoni, Enrico (1996) Correlation between permanent degradation of GaAs-based HEMT´s and current DLTS spectra. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Abbott, Derek and Eshraghian, K. (1996) Current gain mechanism in planar GaAs MESFETs due to new photovoltaic self-biasing edge-effect. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Vashchenko, V.A. and Martynov, J.B. and Sinkevitch, V.F. and Tager, A.S. (1996) Current instability and burnout under MESFET gate breakdown. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Pascual, J.P. and Portilla, J. and Artal, E. (1996) Design approaches for oscillators in low microwave bands. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Laporte, E. and Maurin, P. and Nallatamby, J. C. and Reffet, D. and Prigent, M. and Obregon, J. (1996) Design of state of art low noise VCO using MMIC negative resistance modules. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ndagijimana, Fabien and Chilo, Jean (1996) Design of very high performance packages for microwave GaAs IC's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Legros, E. and Merrar, A. and Billard, M. and Joly, C. and Blanconnier, P. (1996) Distributed GaAs-PHEMT 0.2um preamplifier for 20 Gbit/s photoreceivers. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Langrez, D. and Diette, F. and Theron, D. and Delos, E. and Salmer, G. (1996) Dual gate pseudomorphic HEMT for low noise amplification in millimeter wave range. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Brazil, Thomas J. (1996) EDGE: Europe's new ESPRIT project in high-frequency CAD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Desrousseaux, P. and Konczykowska, Agnieszka (1996) Efficient method for the design of high-speed bipolar decision circuit. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Golshani, A. and Hainberger, R. and Freisleben, S. and Kock, A. and Gornik, E. and Gmachl, C. and Korte, L. (1996) Efficient surface emitting AlGaAs/GaAs laser diodes based on first-order-grating-coupled surface mode emission. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Sylvestre, A. and Aniel, F. and Boucaud, P. and Julien, F.H. and Jin, Y. and Crozat, P. and de Lustrac, A. and Adde, R. (1996) Electroluminescence study of "on" and "off state breakdown in InP based HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Poplavko, Y.M. and Moskalyuk, V.A. and Timofeyev, A.I. and Prokopenko, Y.V. and Pereverzeva, L.P. (1996) Feasibility of one-crystal GaAs artificial pyroelectric array. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Vashchenko, V.A. and Martynov, J.B. and Sinkevitch, V.F. and Tager, A. S. (1996) Formation and evolution of spatial dissipate structures in GaAs n-i-n structures. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Devlin, L. and Buck, B. J. and Clifton, J. C. and Dearn, A.W. and Geen, M. W. and Long, A. P. and Melvin, S. P. (1996) GaAs application specific MMICs for a HIPERLAN MCM. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Morales, J. and Suarez, A. and Sarkissian, J. C. and Quere, R. (1996) Global stability analysis of a broadband MMIC frequency divider in millimetric band. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Jay, Paul R. (1996) Good things come in small (high speed) packages. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Larciprete, N. and Loriga, F. and Marietti, P. and Trifiletti, A. (1996) High CMRR GaAs single-input to differential convertor. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Camiade, M. and Dourlens, C. and Serru, V. and Savary, P. and Blanc, J.C (1996) High performance MMICs for automotive radar application at 77 GHz. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Cocco, V. and Marietti, P. and Trifiletti, A. (1996) High yield design of MMIC transimpedance amplifiers for multigigabit optical transmission systems. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Kosov, A.S. and Vald-Perlov, V.M. and Zotov, V.A. (1996) High-efficiency powerful millimeter wave varactor multiplier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Liu, W. C. and Laih, L. W. and Wu, C. Z. and Cheng, C. C. and Lin, K. W. and Chen, H. R. (1996) High-performance of InGaAs/GaAs doped-channel heterostructure field-effect transistor (HFET) prepared by MOCVD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Cabon, B. and Hilt, A. and Vilcot, A. and Czotscher, K. and Weisser, S. and Berceli, T. (1996) Hybrid integration of laser diode chips on a glass substrate. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Fawaz, Hussein and Thiery, Jean-Francois and Linh, Nuyen and Mollot, Francis and Pesant, Jean-Claude and Francois, Marc and Muller, Michel and Delos, E. and Salmer, Georges (1996) III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Esper-Chain, R and Lassen, P.S. and Lopez, J.F. and Sarmiento, R. (1996) Implementation of a 2.5Gb/s ATM transceiver in GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Laneve, T. and Do-Ky, H. and Watson, P. and Stubbs, M. G. (1996) Implementation of a large-signal HBT model in Libra. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Scavennec, Andre (1996) InP microelectronics reaching maturity. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Horstmann, M. and Hardtdegen, M. and Schimpf, K. and Muttersbach, J. and Lehmann, R. and Marso, M. and Kordos, P. (1996) InP-based monolithically integrated photoreceiver for 4-10GBit/S optoelectronic systems. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

España Boquera, M.C. and Puerta Notario, A. (1996) Injection locked laser modelling in presence of noise. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Liu, Wen-Chau and Tsai, Jung-Hui and Thei, Kong-Beng and Lin, Kun-Wei and Cheng, C. C. and Chen, H. R. (1996) Investigation of InGaP/GaAs multiple negative-differential-resistance (NDR) device prepared by MOCVD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ahdjoudj, Mourad and Boudiaf, Ali and Pouvil, Pierre (1996) K-band monolothic VCO using PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Villa, S. and Lacaita, A. L. and Di Carlo, A. and Lugli, P. (1996) Light emission from direct and phonon-assisted processes in AlGaAs/GaAs HBT's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Quere, R. and Ngoya, E. and Mons, S. and Rousset, J. and Camiade, M. and Obregon, J. (1996) Linear and nonlinear stability analysis of MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Aniel, F. and Lepaul, S. and Peymayeche, L. and De Lustrac, A. and Bouillault, F. and Adde, R. (1996) Local self-heating in short gate GaAs PHEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

van den Bogaart, F.L.M. and de Hek, A.P. and de Boer, A. (1996) MESFET high-power high-efficiency MMIC amplifiers at X-band with 30% bandwidth. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Dueme, Ph. and Nicole, P. and Schaller, M. and Bois, J.R. (1996) MMIC GaAs transimpedance amplifiers for optoelectronic applications. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Cazaux, Jean-Louis and Pouysegur, Michel and Orsini, Maurice and Rivierre, Bernard and Soulard, Michel and Floury, Gerard (1996) MMIC's are now effective in space programs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Portilla, J. and de la Fuente, M.L. and Artal, E. (1996) MMICs for K band low noise receivers. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Wang, S. M. and Karlsson, C. and Rorsman, N. and Bergh, M. and Olsson, E. and Andersson, T. G. and Zirath, H. (1996) Material characterization and device performance of In0.7Al0.3As/InAs/In0.8Ga0.2As HFET structures fabricated on GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Beaumont-Smith, Andrew and Burgess, Neil (1996) Modified Kogge-Stone VLSI adder architecture for GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Fumi, F. and Lanzieri, C. and Lupano, D. and Negri, G. and Peroni, M. and Cetronio, A. (1996) Multi-function self-aligned gate (MSAG) process for low cost, increased performance GaAs integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Delmond, M. and Billonnet, L. and Jarry, B. and Guillon, P. (1996) Multicellular high-order active recursive filter using MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Gasmi, A. and Huyart, B. and Bergeault, E. and Jallet, L. (1996) Narrow band quasi-circulator module design used in a transmit / receive module. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Asmontas, S. and Gradauskas, J. and Seliuta, D. and Silenas, A. and Sirmulis, E. (1996) New GaAs infrared detector. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Danneville, F. and Cappy, A. (1996) Noise modelling of devices under nonlinear operation. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Stephan, R. and Möhring, J. (1996) Practical investigations on monolithic integrated microwave filters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Nava, F. and Vanni, P. and Canali, C. and Cavallini, A. and Chiossi, C. and Bertuccio, G. and Pullia, A. and Lanzieri, C. (1996) SI LEC GaAs nuclear detectors: characterization, performance and applications. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bartolucci, Giancarlo and Pini, Fabrizio and Marcelli, Romolo and Dragoman, M. and Simion, Stefan (1996) Second harmonic generation by means of double tapered non-linear transmission line. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Dhondt, F. and Rolland, P.A. and Haese, N. and Delage, S. L. and Blanck, H. and Chartier, E. (1996) Self consistent electrothermal modeling of multifingers HBTs for power application. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Abbott, Derek and Eshraghian, Kamran (1996) SiGe versus GaAs - is there a challenge? In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Abdipour, A. and Pacaud, A. (1996) Signal and noise properties of TWFETs (model, concept, and potential). In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Filoche, M. (1996) Simulation in optoelectronics : state of the art and trends. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ngoya, E. and Larcheveque, R. (1996) Simulation of microwave communication circuits and systems by envelop and compressed transient methods. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Salmer, G. and De Jaeger, J.C. and Langrez, D. and Kolanowski, C. and Duhamel, F. (1996) Specific methodology for the design of new monolithic millimeter wave integrated circuits. Combination of several simulation and modeling tools. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Boudiaf, Ali and Scavennec, Andre (1996) Temperature dependence of PHEMT noise parameters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Denisenko, V.L. (1996) The anisotropy of the in-plane dispersion relations of the hole subbands of GaAs-GaAlAs quantum well. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Turner, Jim (1996) The competitiveness of european GaAs foundries. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Morthier, G. and Baets, R. (1996) Trends in modelling of single frequency laser diodes. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Balatchev, S. and Gautier, J.L. and Delacressonniere, B. (1996) Using a negative conductance for optimizing the resistive mixers conversion losses. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Poplavko, Y.M. and Pereverzeva, L.P. (1996) Volumetric piezoelectric effect and artificial pyroelectricity in GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Decaesteke, Th. and Villard, M.J and Bois, J.R. and Laforge, E. and Chaubet, M. and Huguet, P. (1996) X-band high PAE MMIC HPA for space radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lassen, Peter S. and Long, Stephen I. (1994) 1.5 Gb/s, 6.6 mW 8-bit multiplexer using two-phase dynamic FET logic. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Heide, P. and Schubert, R. and Magori, V. and Schwarte, R. (1994) 24 GHz low-cost Doppler speed-over-ground sensor with fundamental-frequency PHEMT-DRO. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Riishoj, Jesper (1994) 5 Gb/s laser-driver GaAs IC. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Prasad, S.J. and Haynes, C. and Vetanen, B. and Beers, I. and Park, S. (1994) A 12.5 GHz divide-by-eight prescaler in GaInP/GaAs HBT technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

D'Agostino, Stefano and Gatti, Giuliano and Marietti, Piero and Massenzio, Marco and Trifiletti, Alessandro (1994) A 2-18 GHz monolithic matrix amplifier for low power consumption applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Puechberty, Eric and Masliah, Denis and Delhaye, E. and Herrera, Amparo (1994) A GaAs power chip set for 3 V cellular communications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bonani, F. and Ghione, G. and Pirola, M. and Naldi, C. U. (1994) A large-scale, self-consistent thermal simulator for the layout optimization of power III-V field-effect and bipolar transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Cojocaru, Vicentiu I. and Brazil, Thomas J. (1994) A large-signal model for GaAs MESFET's and HEMT's valid at multiple DC bias-points. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Filicori, F. and Vannini, G. and Monaco, V.A. (1994) A look-up table empirical model for the nonlinear dynamic performance prediction of microwave transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Siweris, Heinz J. and Grave, Thomas and Schleicher, Lothar (1994) A monolithic HEMT distributed amplifier using a low cost spacer technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lu, Ke and Perry, Philip and Brazil, Thomas J. (1994) A new SPICE-type heterojunction bipolar transistor large-signal model. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Gunel, Tayfun and Yazgan, Bingul (1994) A new approach to the design of low noise stable broadband micro wave amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Portilla, J. and Campovecchio, M. and Quere, R. and Obregon, J. (1994) A new coherent extraction method of FETS and HEMTS models for MMIC applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Cryan, M. and Shepherd, P.R. and Pennock, S.R. (1994) A novel voltage controlled directional coupler using a wide FET structure. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bandler, J.W. and Biernacki, R.M. and Cai, Q. and Chen, S.H. (1994) A robust physics-oriented statistical GaAs MESFET model. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Tieman, T.C.B. and Van den Bogaart, F.L.M. and Koomen, P.J. (1994) A single chip C-band linear MMIC vector modulator on GaAs developed for an air-borne active phased-array synthetic aperture radar. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Mason, Richard and Taylor, John (1994) An electro-optic sample and hold circuit using GaAs MESFET technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Hanke, Gerhard (1994) An experimental all-GaAs 10 Gbit/s synchronous transmission system for optical fibers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Pirola, M. and Ghione, G. and Dortu, J. M. and Muller, J. (1994) An improved P-HEMT large-signal model for medium-power Ka-band amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Caddemi, A. and Sannino, M. (1994) Analysis of correlations between noise and scattering parameters for a consistent FET modeling approach. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Ousset, M. and Auvergne, D. (1994) Analytical delay model for Gallium Arsenide digital circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bellone, S. and Cocorullo, G. and Rinaldi, N. and Vitale, G. (1994) Analytical model of GaAs BMFET structures. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Poplavko, Yuri M. (1994) Artificial pyroelectricity in i-GaAs and its possible application. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lott, U. and Baumberger, W. (1994) Broadband 0.3-7 GHz MESFET amplifier with low noise figure up to fT/2 of the active device. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Suarez, A. and Savary, P. and Sarkissian, J.C. and Camiade, M. and Quere, R. (1994) Broadband frequency divider for mobile communications systems. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Khilla, A.-M. (1994) C-band reconfiguration matrix employing MMIC switched amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Calandra, Enrico F. and Sirna, Guglielmo (1994) CAD-oriented modeling of the optically-controlled GaAs MESFET. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Chen, J. W. and Ebling, D. and Eiche, C. and Fiederle, M. and Frommichen, T. and Hug, P. and Irsigler, R. and Jantz, W. and Ludwig, J. and P1otze, T. and Rogalla, M. and Runge, K. and Stibal, R. (1994) Characterization of semi-insulating GaAs for detector fabrication. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Mezzanotte, P. and Mongiardo, M. and Roselli, L. and Sorrentino, R. (1994) Damping of package resonances in microwave integrated circuits: a FDTD analysis. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Jarasiunas, K. and Vaitkus, J. and Bastiene, L. and Vasiliauskas, R. (1994) Defect-related carrier transport peculiarities in lec-grown semi-insulating and heavily-doped GaAs crystals. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Gomez, L. and Hernandez, A. and Nunez, A. (1994) Delay, power and area expressions for GaAs DCFL circuits and their applications to optimization. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Fricke, K. and Krozer, V. and Lee, W.L. and Ruppert, M. and Schubler, M. and Schweeger, G. and Sigurdardottir, A. and Hartnagel, H.L. (1994) Design and technology of AlGaAs/GaAs HBT for high temperature circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Armenise, Mario N. and Passaro, Vittorio M.N. (1994) Design of a GaAs-based guided-wave heterodyne circuit for signal processing. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Verver, C.J. and Stubbs, M.G. (1994) Development of 30 and 20 GHz MMIC mixers for miniaturized personal communications systems. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Plana, R. and Roux, J.P and Escotte, L. and Llopis, O. and Graffeuil, J. and Delage, S. L. and Blanck, H. (1994) Excess noise in microwave GaInP/GaAs heterojunction bipolar transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Langrez, D. and Duhamel, F. and Delos, E. and Salmer, G. (1994) Experimental extraction of equivalent scheme for dual gate field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Subacius, L. and Jarasiunas, K. (1994) Experimental studies of light-microwave field interaction and nonequilibrium carrier transport in GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Robinson, J. and Linton, D. (1994) Expert system techniques applied to MMIC layout including intercomponent coupling. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Prasad, S.J. and Haynes, C. (1994) First demonstration of a GaInP/GaAs HBT YIG-tuned microwave oscillator. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Alinikula, P. and Stadius, K. and Kaunisto, R. (1994) GaAs RF-modules for wireless applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Carballes, Jean-Claude (1994) GaAs based optical devices for telecommunications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Eshraghian, K. and Blanksby, A. and Sarmiento, R. and Lim, C.C. (1994) GaAs design methodology & performance estimates for very high speed circuits using normally-off classes of logic. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Asmontas, S. and Suziedelis, A. (1994) GaAs microwave detector. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Corso, V. and Neto, Victor Patiri and Fischer, Rodrigo Anicet and Finardi, Celio Antonio and Giannini, Franco (1994) GaAs monolithic transimpedance amplifier family (TB 40) developed at R&D center of Telebras. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Canali, C. and Nava, F. and Castaldini, A. and Cavallini, A. and Del Papa, C. and Frigeri, C. and Zanotti, L. and Cetronio, A. and Lanzieri, C. (1994) Gallium Arsenide charged particle detectors: deep levels effects. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Turner, Jim (1994) Gallium Arsenide in Europe - a quiet revolution. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Hjort, Klas (1994) Gallium Arsenide micromechanics. A comparison to Silicon and Quartz. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lee, F. and Kinoshita, G. and Chang, M.F. (1994) HBT technology and applications, today and tomorrow. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Giannini, F. and Leuzzi, G. and Limiti, E. and Scucchia, L. (1994) Harmonic manipulation cure for high-efficiency power amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Castelli, A. and Rasa, F. and Scopelliti, L. (1994) High-power and high-efficiency ion-implanted GaAs MESFETs with buried p-layer. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bosch, Wolfgang and Garat, Francois (1994) Impact of multi-carrier RF signals on the reliability of power GaAs-FETs for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Billonnet, L. and Brucher, A. and Cenac, C. and Delmond, M. and Meunier, Ph. and Jarry, B. and Guillon, P. and Sussman-Fort, S.E. (1994) Improvement of microwave planar active filters with MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Hubner, Michael and Rattay, Bernard (1994) K- and Ku band MMICs for radio link communications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Pardini, R. and Miceli, A. (1994) Ka-band coaxial and waveguide wide temperature range compensated low noise amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Potteau, Laurent and Quentin, Pierre and Parisot, Marc (1994) Ku-band modular MMICs for up to 5W power blocks for VSAT applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Cova, Paolo and Chioato, Elena and Conti, P. and Dall'Aglio, Sandra and Fantini, F. and Manfredi, Manfredo and Menozzi, Roberto and Necchi, Riccardo (1994) Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Aniel, F. and Crozat, P. and De Lustrac, A. and Adde, R. and Jin, Y. (1994) Low drain bias operation of 0.l um to 0.4 um gate length pseudomorphic Al0.22Ga0.78As/In0.2Ga0.8As/GaAs HEMTs at cryogenic temperature. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Jakobsen, Jens (1994) Low-power GaAs multiplexer and demultiplexer. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Feudale, M.A. and Suriani, A.M. and McPartlin, M.J. and Olsen, E.A. (1994) MMICs for satellite Ku band TLC repeaters. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Fricke, K. and Dehe, A. and SchuBler, M and Lee, W. Y. and Hartnagel, H. L. (1994) Micromechanical sensors based on GaAs/AlGaAs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Miao, J. and Hartnagel, H. L. and Rück, D. and Fricke, K. and Würfl, J. and Grüb, A. (1994) Microstructuring of ion-implanted GaAs for high temperature sensor applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Dragoman, M. and Muller, A. and Iordanescu, S. and Craciunoiu, F. and Simion, S. and Szentpali, B. and Somogyi, K. and Riesz, F. and Varga, S. (1994) Millimeter frequencies generation on a travelling MMIC Schottky diode array and application in an automotive sensor. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lang, Richard and Blount, Paul (1994) Modelling & characterisation of a Ka-band monolithic PHEMT low-noise feedback amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Alleva, V. and Pinto, G. (1994) Modern radar and EW systems call for the large scale use of GaAs MIC and MMIC. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Raffaelli, Lamberto (1994) Monolithic components for 77 GHz automotive collision avoidance radars. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Gonzalez, Tomas and Pardo, Daniel and Varani, Luca and Reggiani, Lino (1994) Monte Carlo simulation of electronic noise in MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Haigh, D. G. and Webster, D. R. and Parker, A. E. (1994) Multi-FET MMICs using GaAs MESFETs : applications and new developments. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Giannini, F. and Orengo, G. and Paoluzi, G. and Magrini, P.F. (1994) Multiproject array of GaAs MMIC front-end amplifiers for detection in accelerator physics. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Gruzhinskis, V. and Starikov, E. and Shiktorov, P. and Gricius, R. and Mitin, V. and Reggiani, L. and Varani, L. (1994) Noise and impedance of submicron InP diodes. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Magarshack, John (1994) Novel concepts in MMIC design. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

D'Agostino, Stefano and Marietti, Piero and Renzella, Nunzio and Trifiletti, Alessandro (1994) Novel topologies for MMIC four-quadrant multipliers for T/R wideband systems. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Asenov, A. and Cameron, N. and Taylor, M. and Beaumont, S. P. and Barker, J. R. (1994) Numerical study of the series resistances in deep-submicrometer recess gate MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Pedro, Jose Carlos and Perez, Jorge (1994) On the bias point selection for improved performance in low intermodulation distortion amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Dambrine, G. and Danneville, F. and Belquin, J.M. and Cappy, A. (1994) On-line noise characterization. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bava, G.P. and Debernardi, P. and Autore, G. and Campi, D. (1994) Optimization of InGaAsP-based BRAQWET heterostructures. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Calori, M. and Geronzi, G. and Graffitti, R. and Lanzieri, C. and Lasaponara, L. and Marescialli, L. (1994) Packaged X-band T/R module for active phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Mediavilla, A. and Tazón, A. and Garcia, J.L. (1994) Phenomena description of pulsed characterization of GaAs-MESFET transistors for non-linear modelling purposes. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Caligiore, A. and Di Paola, A. and Di Egidio, M. and Germagnoli, A. and Grassi, E. and Pansini, E. and Parravicini, S. and Ritchie, D. and Tromby, M. and Vidimari, F. (1994) Power P-HEMT realization on MOVPE structures. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Paccagnella, A. and Del Papa, C. and Chitussi, P. and Fuochi, P.G. and Benetti, P. (1994) Radiation induced degradation of electrical characteristics of III-V devices. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Fukuta, Masumi (1994) Recent development of GaAs devices in Japan. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Cameron, N. and Asenov, A. and Ferguson, S. and Taylor, M.R.S. and Holland, M. and Beaumont, S. P. (1994) Reduced short channel effects in selectively dry gate recessed P-doped buffered pseudomorphic HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Schreurs, D. and Nauwelaers, B. and De Raedt, W. and Van Rossum, M. (1994) Requirements of a large-signal HEMT model with regard to non-linear MMIC design. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Henkus, J.C. and Grooters, R. (1994) Ripple+slope performance of satellite channel amplifiers related to GaAs MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Conti, P. and Audagnotto, P. (1994) Scattering and noise measurements of pseudomorphic high electron mobility transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Carballo, P. and Montiel, J. and Sarmiento, R. and Nunez, A. (1994) Setting up a full-custom design environment on cadence for GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Martin-Guerrero, T.M. and Camacho-Peñalosa, C. and Entrambasaguas-Munoz, J.T. (1994) Simulation of the performance of microwave MESFETs using a distributed model. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Feng, Shen and Seitzer, Dieter (1994) Statistical characterization of GaAs E/D HEMT analog components for data conversion ICs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Schmatz, Martin L. (1994) Sub-milliwatt DC power injection locked quadrature local oscillator at 950 MHz. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Mahfoudi, M. and Alonso, Jose I. (1994) Systematic design of MMIC broad band 90° phase shifters. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Pettenpaul, E. and Schopf, K.J. (1994) Technical and commercial aspects of GaAs MMICs for enhanced mobile communication. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Ladbrooke, Peter H. and Beaumont, S. P. (1994) Technological design centering for a 44GHz low-noise amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Donzelli, G.P. and Bastida, E.M. (1994) Technology, design and reliability issues in GaAs power devices. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bertuccio, G. and Longoni, A. and Runge, K. and Lauxtermann, S. (1994) The HFETs in charge preamplifiers for particles physics applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Volkov, L.V. and Lyubchenko, V.E. and Tikhomirov, S.A. (1994) The arrays of GaAs antenna-coupled Schottky barrier diodes in millimeter wave imaging systems. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Cohen, Eliot D. (1994) The impact of the U.S. MIMIC program on MMIC technology and applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Rizzoli, Vittorio and Costanzo, Alessandra and Lipparini, Alessandro and Mastri, Franco and Muzzarelli, Giulio (1994) Thermal modelling of microwave devices for the electrothermal analysis of nonlinear microwave circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Camin, D. V. and Pessina, G. and Previtali, E. and Pillan, Margherita (1994) Towards a model of GaAs MESFETs for the design of cryogenic integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Crespo, C. and Perez, F. and Dorta, P. and Alonso, Jose I. (1994) Transimpedance amplifier for a 2.5 Gbit/s direct transmission optical system using GaAs MESFETS. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Plouchart, J.O. and Riet, M. and Wang, H. and Wawrzynkowski, E. (1994) Ultra broad band monolithically integrated HBT mixer. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Carr, Gary (1994) What GaAs market? What will make GaAs win in wireless markets. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Boulouard, Andre and Le Rouzic, Michel and Castelletto, Jean Paul and Legaud, Pierre (1994) Wide-band GaAs MMIC low-pass filters. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Johansen, Niels Thybo and Danielsen, Per and Riishoj, Jesper and Lassen, Peter (1992) 2 exp(15) -1 pseudo random binary sequence transmitter and receiver chip. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Bourne, P. and Paris, E. and Redon, T. (1992) 60 GHz low noise HEMT MMIC amplifiers and their characterization. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Telliez, I. and Marcillaud, S. and Pastre, J.P. (1992) A 8 Watt high efficiency C band power amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Bonani, F. and Ghione, G. and Naldi, C.U. and Ponse, F. (1992) A CAD-oriented quasi-physical HEMT noise model for device design and optimization. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Payne, D. and Hicks, R. and Lamport, R. and Stewart, E. and Van Leeuwen, B. and Raffaelli, L. (1992) A GaAs monolithic V-band receiver for space communications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Robertson, I. D. and Aghvami, A. H. (1992) A compact X-band GaAs monolithic balanced FET mixer. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Boganski, Laurent and Froc, Erwan and Fourdeux, Henri (1992) A family of high speed digital GaAs gate arrays with an application for 432 MBit/S synchronous transmission. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Marescialli, L. and Massani, M. and Rapisarda, S. and Geronzi, G. (1992) A high-yield monolithic X-band four bit phase-shifter. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Ghione, G. and Naldi, C.U. (1992) A new analytical, CAD-oriented model for the ohmic and radiation losses of asymmetric coplanar lines in hybrid and monolithic MIC's. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Bastida, E.M. and Pagani, Maurizio (1992) A new method for MMIC parametric yield realistic evaluations. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Baumberger, W. and Kaufmann, H. (1992) A single CHIP transmitter for a spread spectrum direct sequence in-house communication system at 2.4GHz. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Ghione, G. and Bonani, F. and Pirola, M. and Naldi, C.U. and Sporkmann, T. (1992) A small-signal and noise model for the physics-based design and optimization of GaAs MESFET's for hybrid and monolithic MIC's. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Pike, S.J. and Hankey, J. (1992) A wideband low noise GaAs hybrid optical receiver for a coherent fibre optic communication system. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Hernández-Muñoz, José M. and González, José and Conesa, José Luis (1992) Adjustable bandwidth GaAs monolithic transimpedance amplifier with AGC for O/E receivers up to 2.5 GBit/S. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Myers, F.A. (1992) Advanced circuit concepts and evolving MMIC processes. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Devlin, L. and Buck, B. J. and Eddison, C. G. (1992) An error tolerant, Ku-band, gain/phase control MMIC. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Bayar, E. and Robertson, I.D. and Aghvami, A. H. (1992) An advanced technology L-band light weight receiver front-end. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Westcott, Christine (1992) An investigation of microwave packaging and associated bonding techniques. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Brambilla, G. and D'Ambrosio, A. and Fattore, G. and Galante, P. and Tedeseo, C. and Castellaneta, G. (1992) An investigation on the reliability of AlGaAs/GaAs HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Magiscrali, F. (1992) An overview of GaAs MMICs reliability. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Murphy, Timothy A. and Gipprich, John W. and Hines, Marion E. and Kryger, David (1992) An ultra-broad-band phase shifter in glass-based integrated circuitry (GMIC). In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Leuzzi, Giorgio and Minnaia, Nicola and Giannini, Franco (1992) Analytic representation of nonlinear parameters of microwave MESFET's. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Sejalon, F. and Chaubet, M. and Escotte, L. and Graffeuil, J. (1992) Application of the TRL calibration technique for HEMT's microwave characterization at temperatures down to 77 K. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Leuzzi, G. and Deiseroth, K. and Giannini, F. and DeSantis, B. (1992) Bias conditions for accurate parasitics evaluation of microwave MESFETs up to mm-wave frequencies. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Olomo Ngongo, A. and Perennec, A. and Soares, R. and Jarry, P. (1992) C.A.D for broad-band multistage microwave transimpedance amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Caddemi, A. and Martines, Giovanni and Sannino, Mario (1992) CAD-oriented HEMT models from noise and scattering measurements. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Mbaye, A. and Gatti, G. (1992) CEC and ESA activities in the area of GaAs and related III-V compounds. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Magarshack, J. (1992) Civil applications with mm-wave MMIC's in Europe. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Huang, Charles (1992) Commercial GaAs MMIC applications in the United States. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Baknard, Joseph (1992) Defining the technology file for GaAs foundry elements. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Bonato, Gian Luca and Boveda, Angel and Ripolles, Olga (1992) Design and performance of GaAs MMIC's for L-band low noise front-end applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Miller, P. and Anderson, A. K. (1992) Development of gain/phase control blocks for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Bensoussan, A. and Coval, P. and Gregoris, G. and Pouysegur, M. and Cazaux, Jean-Louis (1992) Flight model GaAs MMIC procurement: industrial concerns. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Lautier, P. and Drevon, C. and Coello Vera, A. (1992) GaAs MMIC die assembly. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Geen, M. W. and Green, G. J. and Shukla, R. and Frier, A. A. G. (1992) GaAs MMIC switches for high volume applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Caux, C. and Gamand, P. and Philippe, P. and Pauker, V. and Meignant, D. and Pertus, M. (1992) GaAs low cost microwave monolithic circuits for high volume television applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Allamando, Etienna Andre (1992) GaAs-monolithic IC's for an X-band crystal-stabilized source. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Comparini, M.C. (1992) Gallium Arsenide components in the evolution of on-board satellite communication equipments. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Primerose, A. and Graffeuil, J. and Lapierre, L. and Sombrin, J. and Lalaurie, J.C. and Larroque, J. (1992) High bit rate four phase MMIC remodulation demodulator and modulator. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Feldle, Heinz-Peter and Reber, Rolf H. (1992) High resolution phase shifter for active phased array antenna beam forming. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Greiling, Paul T. (1992) InP-based devices and circuits for high performance microwave/millimeter wave applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Lucyszyn, Stepan and Green, Ged and Robertson, Ian D. (1992) Interdigitated planar Schottky varactor diodes for tunable MMIC applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Aikawa, Masayoshi (1992) MMIC technology and its applications to communication systems. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Dambkes, Heinrich and Schmidt, Lorenz-Peter (1992) MMIC technology in Europe for millimeterwave applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Halkias, George and Georgakilas, Alexandros and Papavassiliou, Christos and Perantinos, George and Lagadas, Michael and Konstantinidis, George and Christou, A. (1992) RF performance of GaAs/Si/Si MESFETs for MIMICs. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Lindsay, C.E. and Bolbot, P.H. and Buckle, C. and Drummond, E.I. and Conlon, R.F.B. (1992) Reliability evaluation of GaAs MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Pasquali, J.P. (1992) Reliability evaluation of the D07A process from Philips microwave Limeil. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Peray, J.F and Fiers, C. and Crudo, P. and Jacobelli, C. (1992) Reliability of GaAs processes for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Schrappe, B. J. and Patiri, V. and Biazotto, A. and Finardi, C. A. (1992) Self - consistent simulation and manufacturing of spice - doped GaAs field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Lanzieri, C. and D'Eustacchio, P. and Peroni, M. and Cetronio, A. and Ghione, G. and Pirola, M. and Carnera, A. and Gasparotto, A. (1992) Self-aligned proton implantation GaAs MESFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Camacho-Peñalosa, C. and Martin-Guerrero, T. and Entrambasaguas-Muñoz, J.T. (1992) Simulation of high frequency dispersion phenomena in equivalent circuits for microwave FET-type devices. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Camiade, M. and Savary, P. and Peronne, J.P. and Bert, A. (1992) Standard multifunction MMIC chip for phase locked microwave oscillators. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Kargaard Madsen, Jens (1992) TSCFL - A new GAAs high-speed family for delay insensitive circuits using ternary logic elements. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Walters, Peter C. and Pollard, Roger D. and Richardson, John R. (1992) Transit time MESFET phase shifter. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Han, Yu-Jie (1990) Investigation of native vacancies in GaAs using positron annihilation and other measurements. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Kemppinen, Esa and Narhi, Tapani and Jarvinen, Esko (1990) L-band low power monolithic GaAs receiver front ends. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Caldironi, M. and Campesato, R. and Flores, C. and Vidimari, F. (1990) MOCVD growth of GaAs-Ga1-xAlxAs structures for microwave MESFET's. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Lugli, Paolo and Neviani, Andrea and Saraniti, Marco (1990) Monte Carlo simulation of submicron MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Breglio, Giovanni and Cutolo, Antonello and Zeni, Luigi (1990) Non invasive ultrafast optoelectronic sampling of GaAs devices. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Mediavilla, A. and Tazon, A. and Vegas, A. and Garcia, J.L. (1990) Optimization and stability analysis techniques in microwave GaAs FET oscillators for MMIC applications. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Temcamani, F. and Crosnier, Y. and Vanbremeersch, J. and Salmer, G. (1990) Optimization of multiheterojunction AlGaAs/GaAs HEMT's for microwave power amplification. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Alleva, V. and Calori, M. and Cetronio, A. and Lanzieri, C. and Proietti, C. and Rapisarda, S. (1990) Packaged, cascadable wideband monolithic feedback amplifiers for radar systems applications. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Kosmopoulos, S. A. and Lo Forti, R. and Saggese, E. (1990) Parametric frequency dividers in satellite communications. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Bava, G.P. and Debernardi, P. (1990) Performance evaluation of a MWQ all optical modulator. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Benvenuti, A. and Cetronio, A. and Ghione, G. and Liberati, R. and Naldi, C.U. and Pirola, M. (1990) Physical simulation: a tool for technological evaluation and optimization of GaAs MESFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Buonocore, A. and Giannini, F. and Leuzzi, G. (1990) Power optimisation of distributed amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Suffolk, J. R. and Buck, B. J. and Harvey, A. R. and Eddison, C. G. and Warner, D. J. (1990) Production considerations for GaAs MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Itoh, Tatsuo (1990) Quasi-optical circuit applications of GaAs devices. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Dahlgren, Ulf and Rudner, Staffan and Willander, Magnus (1990) Radiation effects on the electrical performance of GaAs/GaAIAs HEMT's. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Bianchi, S. and Castelli, A. and Ehrenheim, A. and Vidimari, F. (1990) Rapid thermal annealing of Si implanted GaAs in Arsenic overpressure. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Brambilla, P. and Magistrali, F. and Sangalli, M. and Canali, C. and Zanoni, E. and Castellaneta, G. and Marchetti, F. (1990) Results from electrical caracterization and reliability tests of GaAs/GaAlAs HEMT's. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Obregon, J. and Ngoya, E. and Quere, R. and Prigent, M. and Rousset, J. (1990) Some aspects of non-linear modeling and simulation of microwaves circuits. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Raffaelli, L. and Dawe, G. and Bartle, D. and Bandla, S. (1990) State of the art pin and FET monolithic switches. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Schmitz, D. and Strauch, G. and Heyen, M. and Jurgensen, H. (1990) The application of gas foil rotation for growth of InP-based Ill-V compound semiconductors in a horizontal LP MOVPE reactor. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Donzelli, P. and Ghione, G. and Naldi, C.U. (1990) Thermal models for low- and high-power GaAs MESFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Fillard, J.P. and Castagné, M. and Gall, P. and Bonnafe, J. (1990) Transistor specifications and substrate defect's in GaAs test circuits. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Cotton, F. J. and Warner, D. J. and Buck, B. J. and Pickering, K. L. (1990) Uncommitted GaAs MMICs assembled by flip-chip solder bonding. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Christou, A. (1990) X-band MMIC performance with MBE epitaxial structures and refractory gates. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

This list has been generated onFri Oct 23 20:37:58 2020 CEST.
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