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Numero di documenti a questo livello: 1520.

Torregrosa-Penalva, German ; Asensio-L´opez, Alberto ; Alvaro, Blanco-del-Campo (2005) Electro-thermal model extraction for MMIC Power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Santarelli, A. ; Filicori, F. ; Vannini, G. ; Rinaldi, P. (1998) 'Backgating' model including self-heating for low-frequency dispersive effects in III-V FETs. Electronics Letters, 34 (20). pp. 1974-1976. ISSN 0013-5194

De Raedt, W. ; Brebels, S. ; Monfraix, Ph. ; Carchon, G. ; Jourdain, Anne ; Tilmans, Harrie A.C. (2001) 0-Level packaging techniques for flip-chip mounted MMICs. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bollaert, S. ; Wallart, X. ; Lepilliet, S. ; Cappy, A. ; Jalaguier, E. ; Pocas, S. ; Aspar, B. (2001) 0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bollaert, S. ; Cordier, Y. ; Happy, H. ; Zaknoune, M. ; Lepilliet, S. ; Cappy, A. (1998) 0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Touirat, M. ; Roger, M. ; Nuyen, L.T. ; Crosnier, Y. ; Salmer, G. (2000) 0.3µm-N-HIGFET capabilities for microwave power apllications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Lassen, Peter S. ; Long, Stephen I. (1994) 1.5 Gb/s, 6.6 mW 8-bit multiplexer using two-phase dynamic FET logic. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lee, M. ; Kim, Y. M. (1996) 10 GHz ultra-high speed GaAs decision circuit design. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Milivojevic, B. ; Gu, Z. ; Thiede, A. (2005) 10 Gbit/s differential amplifier demonstrating striplines in 0.18µm CMOS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Le Gallou, N. ; Villemazet, J.F. ; Cogo, B. ; Cazaux, Jean-Louis ; Mallet, A. ; Lapierre, L. (2003) 10 W High Efficiency 14V HBT Power Amplifier for Space Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Veenstra, H. ; Hurkx, G.A.M. ; Heijden, E. v.d. ; Vaucher, C.S. ; Apostolidou, M. ; Jeurissen, D. ; Deixler, P. (2005) 10-40GHz design in SiGe-BiCMOS and Si-CMOS – linking technology and circuits to maximize performance. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Darbandi, A. ; Zoyo, M. ; Loval, L. ; Buret, H. ; Michard, F. (2000) 10W C-BAND highly efficient HYBRID-MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Masuda, Satoshi ; Kira, Hidehiko ; Hirose, Tatsuya (2004) 110-GHz High-gain Flip-chip InP HEMT Amplifier with Resin Encapsulation on an Organic Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hue, X. ; Rogeaux, E. ; Cazaux, Jean-Louis ; Mallet, A. ; Lapierre, L. ; Boudart, B. ; Bonte, B. ; Crosnier, Y. (2000) 1W/mm GaAs pHEMT for realization of linear power amplifier in the K band. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Johansen, Niels Thybo ; Danielsen, Per ; Riishoj, Jesper ; Lassen, Peter (1992) 2 exp(15) -1 pseudo random binary sequence transmitter and receiver chip. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Wohlgemuth, O. ; Müller, W. ; Link, T. ; Lederer, R. ; Paschke, P. (2005) 2-1 SiGe PRBS Generator IC up to 86 Gbit/s. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Howell, Charles M. ; Regan, John J. (1990) 2-18 GHz broadband MMIC SPDT switches based on GMIC and heterolithic circuits. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Kayano, Hiroyuki ; Iwata, Satoru ; Sato, Hiroaki ; Iseki, Yuji (2002) 2.5 GHz Wide Band Linear Amplifier with Feedforward Lineariser on a Board. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Demange, D. ; Billard, M. ; Lefevre, R. (1996) 20 Gb/s electroabsorption modulator drivers based on 0.2 um GaAs PHEMT. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Gu, Zheng ; Thiede, Andreas ; Möller, Lothar (2003) 20 Gbit/s Decision Feedback Loop for Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Heide, P. ; Schubert, R. ; Magori, V. ; Schwarte, R. (1994) 24 GHz low-cost Doppler speed-over-ground sensor with fundamental-frequency PHEMT-DRO. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Darbandi, A. ; Zoyo, M. ; Touchais, J.Y. ; Lévèque, H. (2002) 25W C-BAND highly efficient on board hybrid amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Darbandi, A. ; Buret, H. ; Michard, F. ; Zoyo, M. (1999) 25W L-band power module for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Clerckx, G. ; Verbiest, R. (1997) 26 GHz MMIC linear vector modulator. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Meng, Chin-Chun ; Wu, Tzung-Han ; Lu, Shey-Shi (2002) 28 dB Gain DC-6 GHz GaInP/GaAs HBT Wideband Amplifiers with and without Emitter Capacitive Peaking. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Corso, V. ; Bastida, E.M. ; Finardi, C.A. ; Fischer, R.A. ; Patiri, V. (1997) 3.5 GHz bandwidth low-cost GaAs IC receiver for 2.5 to 5 Gbit/s optical links. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Lefebvre, B. ; Bessemoulin, A. (2003) 35-45 GHz Image Rejection Star Mixer for Up-and Down Conversion. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Werthof, Andreas (2003) 36-44 GHz HPAfor High Linearity Radio Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Rasà, F. ; Celestino, F. ; Remonti, M. ; Gabbrielli, B. ; Quentin, P. (2000) 37-40GHz MMIC Sub-Harmonically Pumped Image Rejection Diode Mixer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Marcelli, Romolo ; Dragoman, M. ; Neculoiu, Dan ; Giacomozzi, Flavio ; Muller, Alexandru ; Nitescu, N. (2001) 38 GHz Antennas on Micromachined Silicon Substrates. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Ulian, Patrice ; Monfraix, Philippe ; George, Sebastien ; Tronche, Christian ; Drevon, C. ; Cazaux, Jean-Louis (1998) 3D active modules for high integration active antennas. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Monfraix, Philippe ; Drevon, C. ; Schaffauser, Chloé ; Paillard, Mathieu ; Vendier, Olivier ; Cazaux, Jean-Louis (2005) 3D packaging for space application : imagination and reality. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Hourany, Jean ; Bellaiche, Joseph ; Andre, Jean-Pierre ; Delhaye, E. (1998) 40 Gb/s ICs using a production PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Monteiro, Paulo P. ; Violas, Manuel ; Sousa Ribeiro, Rui ; Ferreira da Rocha, José (2001) 40 Gbit/s GaAs MMIC Signal Processor for Optical Communication Systems. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kauffmann, N. ; Andre, P. ; Burie, J.R. ; Duchenois, A. M. ; Riet, M. ; Konczykowska, A. (1999) 44 Gb/s InP DHBT MUX-Driver IC for external laser modulation. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

König, Frédy ; Shimizu, Haruo ; Takahashi, Hidenori ; Miyazawa, Shigemi ; Fukaya, Jun (2000) 4W GaAs MMIC Power Amplifier for PCS and W-CDMA Base Station. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bartocci, M. ; De Santis, G. ; Giolo, G. ; Rossi, L. ; Gemma, M. (2001) 4W TX/RX Multi Chip Module for 6-18GHz Phased Array. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Riishoj, Jesper (1994) 5 Gb/s laser-driver GaAs IC. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Choi, Sunkyu ; Kim, Taeho ; Lee, Bangkeun ; Yang, Kyounghoon (2004) 5-GHz VCO with a wide tuning range using an InPbased RTD/HBT technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Konczykowska, A. ; Jorge, F. ; Riet, M. ; Moulu, J. ; Godin, J. (2005) 50 Gb/s DFF and decision circuits in InP DHBT technology for ETDM systems. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Moran, D.A.J. ; Boyd, E. ; Elgaid, K. ; McLelland, H. ; Stanley, C.R. ; Thayne, I.G. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using a non-annealed ohmic contact process. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Maas, A.P.M. ; Hoogland, J.A. (2005) 60 GHz GaAs MMIC mixers with integrated LO buffer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bourne, P. ; Paris, E. ; Redon, T. (1992) 60 GHz low noise HEMT MMIC amplifiers and their characterization. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Maruhashi, K. ; Ito, M. ; Ikuina, K. ; Hashiguchi, T. ; Matsuda, J. ; Domon, W. ; Iwanaga, S. ; Takahashi, N. ; Ishihara, T. ; Yoshida, Y. ; Izumi, I. ; Ohata, K. (2001) 60GHZ-band flip-chip MMIC modules for IEEE1394 wireless adapters. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Hoffmann, S. ; Ojha, J.R. ; Thiede, A. ; Leblanc, R. ; Wroblewski, B. (2002) 7 VPP Modulator-Driver for 40 Gbit/s Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Raynaud, C. ; Faynot, O. ; Pelloie, J.-L. ; Tabone, C. ; Grouillet, A. ; Martin, F. ; Dambrine, G. ; Vanmackelberg, M. ; Picheta, L. ; Mackowiak, E. ; Brut, H. ; Llinares, P. ; Sevenhans, J. ; Compagne, E. ; Fletcher, G. ; Flandre, D. ; Dessard, V. ; Vanhoenacker, D. ; Raskin, J.-P. (2000) 70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Werthof, A. ; Grave, T. ; Kellner, W. (1999) 90 GHz amplifier fabricated by a low cost PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Hoel, Virginie ; Boret, Samuel ; Grimbert, Bertrand ; Aperce, Gilles ; Bollaert, S. ; Happy, Henri ; Wallart, Xavier ; Cappy, A. (1999) 94-GHz low noise amplifier on InP in coplanar technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Matsumoto, K. ; Furutani, N. ; Fukaya, J. ; Hirano, Y. ; Fukuden, N. ; Ohta, K. (1990) A high efficiency GaAs FET high power amplifier applicable in handy phone equipment. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Filicori, F. ; Santarelli, A. ; Vannini, G. ; Monaco, V.A. (1998) A "backgating" model including self-heating for III-V FETs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Chang, C.-P. ; Yen, C.-C. ; Chuang, H.-R. (2005) A 0.18-µm 2.4~6GHz CMOS broadband differential LNA for WLAN and UWB receiver. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bartocci, M. ; Lanzieri, C. ; Peroni, M. (1997) A 0.5-30 GHz monolithic PHEMT amplifier for ESM systems applications. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bessemoulin, A. ; Parisot, M. ; Quentin, P. ; Saboureau, C. ; Van Heijningen, M. ; Priday, J. (2004) A 1-Watt Ku-band Power Amplifier MMIC using Cost-effective Organic SMD Package. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Centurelli, F. ; Golfarelli, Alessandro ; Guinea, Jesus ; Masini, Leonardo ; Morigi, Damiana ; Pozzoni, Massimo ; Scotti, Giuseppe ; Trifiletti, Alessandro (2003) A 10 Gb/s CMU in SiGe BiCMOS commercial technology with multistandard capability. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Maekawa, Arata ; Nagahara, Masaki ; Yamamoto, Takashi ; Sano, Seigo (2005) A 100 W high-efficiency GaN HEMT amplifier forS-band wireless system. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Prasad, S.J. ; Haynes, C. ; Vetanen, B. ; Beers, I. ; Park, S. (1994) A 12.5 GHz divide-by-eight prescaler in GaInP/GaAs HBT technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Muller, A. ; Thiel, M. ; Irion, H. ; Ruoß, H.-O. (2005) A 122 GHz SiGe active subharmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Schwörer, C. ; Campos Roca, Y. ; Leuther, A. ; Tessmann, A. ; Seelmann-Eggebert, M. ; Massler, H. ; Schlechtweg, M. ; Weimann, G. (2005) A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bao, Mingquan ; Li, Yinggang (2005) A 17 to 26 GHz micromixer in SiGe BiCMOS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Avitabile, G. ; Chellini, B. ; Giannini, F. ; Limiti, E. (2002) A 18 GHz MMIC biquad active filter. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Wu, L. ; Basaran, U. ; Tao, R. ; Berroth, M. ; Boos, Z. (2005) A 2 GHz CMOS dB-linear programmable-gain amplifier with 51 dB dynamic range. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tempel, Mike ; Huber, Meik ; Boeck, Georg (2004) A 2 GHz Fully Balanced Switching HBT Mixer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

D'Agostino, Stefano ; Gatti, Giuliano ; Marietti, Piero ; Massenzio, Marco ; Trifiletti, Alessandro (1994) A 2-18 GHz monolithic matrix amplifier for low power consumption applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Chang, E. Y. ; Lee, Di-Houng ; Lai, Yeong-Lin ; Chen, S.H. (1999) A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Chang, Hong-Yeh ; Wang, Huei ; Wang, Yu-Chi ; Chao, P. C. ; Chen, Chung-Hsu (2004) A 22-GHz Ultra Low Phase Noise Push-Push Dielectric Resonator Oscillator Using MMICs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bao, Mingquan ; Li, Yinggang ; Cathelin, Andreia (2003) A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Iqbal, A. ; Darwazeh, I. Z. (1998) A 23 GHz baseband HBT distributed amplifier for optical communication systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Mazouffre, Olivier ; Lapuyade, Hervé ; Begueret, Jean-Baptiste ; Cathelin, Andreia ; Belot, Didier ; Hellmuth, Patrick ; Deval, Yann (2005) A 23-24 GHz low power frequency synthesizer in 0.25 m SiGe. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tang, Yu-Lung ; Wang, Huei (2001) A 24.6-GHz MMIC HBT Triple-Push Oscillator. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Bué, F. ; Gaquiere, C. ; Crosnier, Y. ; Carnez, B. ; Quentin, P. (1999) A 26-40 GHz on wafer intermodulation measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Hincelin, Guillaume (2001) A 2GHz Delta-Sigma Modulator implemented in InP HBT technology. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Lopez, J.F. ; Sarmiento, R. ; Nunez, A. ; Eshraghian, K. (1996) A 2ns/660mW GaAs 5Kbit ROM using low leakage current FET circuit (L2FC). In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lenk, F. ; Klockenhoff, H. ; Kurpas, P. ; Maaßdorf, A. ; Wurfl, H. J. ; Heinrich, W. (2005) A 3.2 W coplanar single-device X-band amplifier with GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chen, Wei-Chien ; Chen, Shih-Yu ; Tsai, Jeng-Han ; Huang, Tian-Wei ; Wang, Huei (2005) A 38-48-GHz miniature MMIC subharmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Barbier, T. ; Mazel, F. ; Reig, B. ; Monfraix, P. (2005) A 3D wideband package solution using MCM-D BCB technology for tile TR module. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Mueller, J.-E. ; Gerlach, U. ; Madonna, G.L. ; Pfost, M. ; Schultheis, R. ; Zwicknagl, P. (2000) A 3V small chip size GSM HBT power MMIC with 56% PAE. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tsenes, Petros ; Uzunoglu, Nikolaos (2003) A 4-bit 7.5 GHz A/D Converter. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Virk, R.S. ; O'Neal, M. ; Camargo, E. ; Ragle, R. ; Notomi, S. ; Gentrup, M. ; Franzwa, E. ; Hicks, G. ; Fukugawara, T. (2002) A 43-Gbps Lithium Niobate Modulator Driver Module. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Anowar Masud Kelly, M. ; Zirath, Herbert ; Kelly, Matthew (2005) A 45 dB variable gain low noise MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wu, Tzung-Han ; Meng, Chinchun ; Wu, Tse-Hung ; Huang, Guo-Wei (2004) A 5.7 GHz 0.35 m SiGe HBT Upconversion Micromixer with a Matched Single-ended Passive Current Combiner Output. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Sang-Heung ; Lee, Ja-Yol ; Lee, Seung-Yun ; Park, Chan Woo ; Kim, Sang Hoon ; Bae, Hyun-Chul ; Kang, Jin-Yeong ; Cho, Kyoung Ik (2003) A 5.8 GHz Mixer using SiGe HBT Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ueda, Hiro-omi ; Shinjo, Shintaro ; Nabeno, Yasuhiro ; Ono, Masayoshi ; Ohnakado, Takahiro ; Murakami, Takaaki ; Furukawa, Akihiko ; Hashizume, Yasushi ; Nishikawa, Kazuyasu ; Mori, Takeshi ; Yamakawa, Satoshi ; Oomori, Tatsuo ; Suematsu, Noriharu (2003) A 5GHz-Band On-Chip Matching CMOS MMIC Front-End. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Miyaguchi, Kenichi ; Hieda, Morishige ; Tarui, Yukinobu ; Hatamoto, Mikio ; Kanaya, Koh ; Kasahara, Michiaki ; Takagi, Tadashi (2002) A 6-18 GHz 5-Bit Phase Shifter MMIC Using Series/Parallel LC Circuit. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Zelley, C. A. ; Barnes, A. R. ; Ashcroft, R. W. (2001) A 60 GHz double balanced sub-harmonic mixer MMIC. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Collins, Thomas E. ; Betti-Berutto, A. ; Long, Stephen I. (2003) A 75 GHz Current Mode Logic Static Frequency Divider Realized in a Commercially Available InP Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Telliez, I. ; Marcillaud, S. ; Pastre, J.P. (1992) A 8 Watt high efficiency C band power amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Butterworth, Peter ; Charbonniaud, C. ; Campovecchio, M. ; Nallatamby, Jean-Christophe ; Monnier, Marc ; Lajugie, Monique (2003) A Balanced Sub-Harmonic Cold FET Mixer for 40GHz Communication Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sen, P. ; Park, H. -M. ; Mukhopadhyay, R. ; Srirattana, N. ; Raghavan, A. ; Laskar, J. ; Cressler, J. D. ; Freeman, G. (2004) A Broadband, Small-Signal SiGe HBT Model for Millimeter-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Pataut, G. ; Telliez, I. ; Couturier, A.M. ; Andre, M. ; Janer, P. (1990) A C-band direct demodulation MMIC receiver for digital communications systems. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Limiti, E. ; Serino, A. ; Peroni, M. ; Romanini, P. ; Proietti, C. (2005) A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ghione, G. ; Goano, M. ; Naldi, C. U. (1996) A CAD-oriented model for the ohmic losses of multiconductor coplanar lines in hybrid and monolithic MIC's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bonani, F. ; Ghione, G. ; Naldi, C.U. ; Ponse, F. (1992) A CAD-oriented quasi-physical HEMT noise model for device design and optimization. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

Nam, Joongjin ; Kim, Youngwoong ; Shin, Jin-Ho ; Kim, Bumman (2004) A CDMA and AMPS Handset Power Amplifier based on Load Modulation Technique. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Reveyrand, T. ; Mazière, C. ; Nébus, J. M. ; Quéré, R. ; Mallet, A. ; Lapierre, L. ; Sombrin, J. (2002) A Calibrated Time Domain Envelope Measurement System for the Behavioral Modeling of Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bessemoulin, A. ; Gaessler, C. ; Marschall, P. ; Quentin, P. (2003) A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mediavilla, A. ; Tazon, A. ; Garcia, J.A. ; Zamanillo, J.M. ; Fernandez, T. (2000) A Coherent Small/Large Signal FET model Based on Neuronal Architectures 1. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Wei, C.-J. ; Gering, J. ; Sprinkle, S. ; Tkachenko, Y.A. ; Bartle, D. (2001) A Compact, semi-physically based model predicts accurate aower and linearity of power InGaP HBTs. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bös, Thomas A. ; Satoh, Tomio ; Kajii, Kiyoshi ; Camargo, E. ; Hasegawa, Yuichi (2002) A Converter MMIC with Integrated LO Amplifier and Doubler. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hirachi, Yasutake ; Nakano, Hiroshi ; Kato, Akihito (2000) A Cost-Effective Receiver-Module with Built-in Patch Antenna for Millimeter-Wave Wireless Systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Morioka, Shigeki ; Yokoi, Kiyotaka ; Yoshida, Katsuyuki ; Shirasaki, Takayuki (2001) A DC to 40GHz Low Cost Surface Mountable RF-VIA TM Package. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

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